公开(公告)号：US20240021423A1

公开(公告)日：2024-01-18

申请号：US18350400

申请日：2023-07-11

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yasuhiko KOJIMA ,  Shota ISHIBASHI ,  Toru KITADA

IPC: H01J37/34 ,  H01J37/32 ,  C23C14/35 ,  C23C14/50 ,  C23C14/34

CPC classification number: H01J37/3455 ,  H01J37/32715 ,  H01J37/3429 ,  C23C14/352 ,  C23C14/505 ,  C23C14/3407 ,  H01J2237/332

Abstract: There is a film forming apparatus comprising: a first holder holding a first target formed of a first material; a second holder holding a second target formed of a second material different from the first material; and a mounting table holding a substrate, the mounting table rotatable with a central axis of the mounting table as a rotation axis, wherein a distance from the central axis of the mounting table to a center of a sputter surface of the first target is different from a distance from the central axis of the mounting table to a center of a sputter surface of the second target.

公开(公告)号：US20200381226A1

公开(公告)日：2020-12-03

申请号：US16883543

申请日：2020-05-26

Applicant: Tokyo Electron Limited

Inventor： Kenichi IMAKITA ,  Yasuhiko KOJIMA ,  Atsushi GOMI ,  Hiroyuki YOKOHARA ,  Hiroshi SONE

IPC: H01J37/34 ,  C23C14/34 ,  H01J37/32

Abstract: A film forming apparatus includes: a processing container; a substrate holder that holds the substrate in the processing container; and a target assembly disposed in an upper side of the substrate holder. The target assembly includes: a target made of metal, including a main body and a flange provided around the main body, and emitting sputter particles from the main body; a target holder including a target electrode configured to supply power to the target, and holding the target; a target clamp that clamps the flange of the target to the target holder; and an anti-deposition shield provided around the main body of the target to cover the flange, the target clamp, and the target holder, and having a labyrinth structure in which an inner tip end thereof is disposed to enter a recess between the main body of the target and the target clamp.

公开(公告)号：US20160251746A1

公开(公告)日：2016-09-01

申请号：US15032688

申请日：2014-08-28

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yasuhiko KOJIMA ,  Hiroshi SONE ,  Atsushi GOMI ,  Kanto NAKAMURA ,  Toru KITADA ,  Yasunobu SUZUKI ,  Yusuke SUZUKI ,  Koichi TAKATSUKI ,  Tatsuo HIRASAWA ,  Keisuke SATO ,  Chiaki YASUMURO ,  Atsushi SHIMADA

IPC: C23C14/00 ,  H01L43/08 ,  H01J37/32 ,  C23C14/16 ,  H01J37/34 ,  H01L43/12 ,  H01L43/10

CPC classification number: C23C14/0036 ,  C23C14/0063 ,  C23C14/081 ,  C23C14/165 ,  C23C14/352 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/3405 ,  H01J37/3426 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

Abstract: A deposition device according to one embodiment includes a processing container. A mounting table is installed inside the processing container, and a metal target is installed above the mounting table. Further, a head is configured to inject an oxidizing gas toward the mounting table. This head is configured to move between a first region that is defined between the metal target and a mounting region where a target object is mounted on the mounting table and a second region spaced apart from a space defined between the metal target and the mounting region.

Abstract translation: 根据一个实施例的沉积装置包括处理容器。 安装台安装在加工容器的内部，金属靶被安装在安装台的上方。 此外，头部构造成朝向安装台注入氧化气体。 该头部构造成在限定在金属靶和安装在安装台上的目标物体的安装区域之间的第一区域和与限定在金属靶和安装区域之间的空间间隔开的第二区域之间移动。

公开(公告)号：US20240021415A1

公开(公告)日：2024-01-18

申请号：US18350410

申请日：2023-07-11

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yasuhiko KOJIMA

IPC: H01J37/32 ,  C23C14/34

CPC classification number: H01J37/32477 ,  H01J37/32183 ,  C23C14/34 ,  H01J2237/332

Abstract: A film forming apparatus comprises a processing chamber connected to a ground potential, a holder configured to hold a target, a DC power supply configured to apply a DC voltage to the holder and an anti-adhesion shield disposed to surround the target and supported by the processing chamber through an insulating member. An impedance matcher is connected to the anti-adhesion shield and an RF power supply is connected to the impedance matcher.

公开(公告)号：US20220285197A1

公开(公告)日：2022-09-08

申请号：US17652545

申请日：2022-02-25

Applicant: Tokyo Electron Limited

Inventor： Hiroaki CHIHAYA ,  Yasuhiko KOJIMA ,  Einstein Noel ABARRA ,  Tetsuya MIYASHITA

IPC: H01L21/683

Abstract: A substrate processing apparatus includes: a stage including an electrostatic chuck configured to attract a substrate; a heater configured to heat the stage; a heating drive part configured to supply power to the heater so that a temperature of the stage becomes a target value; and a detector configured to detect an abnormality in attraction of the substrate by the electrostatic chuck, wherein the detector is further configured to detect the abnormality based on fluctuation of the power supplied to the heater, the fluctuation being generated by the attraction of the substrate by the electrostatic chuck.

公开(公告)号：US20220285182A1

公开(公告)日：2022-09-08

申请号：US17652332

申请日：2022-02-24

Applicant: Tokyo Electron Limited

Inventor： Hiroaki CHIHAYA ,  Tetsuya MIYASHITA ,  Einstein Noel ABARRA ,  Yasuhiko KOJIMA

IPC: H01L21/67 ,  H01L21/683

Abstract: A substrate processing apparatus includes: a stage having an electrostatic chuck configured to attract a substrate; a measurement part configured to measure a temperature of the stage; and a detection part configured to detect an abnormality caused by attraction of the substrate by the electrostatic chuck, based on a fluctuation of the temperature of the stage.

公开(公告)号：US20150075971A1

公开(公告)日：2015-03-19

申请号：US14490410

申请日：2014-09-18

Applicant: TOKYO ELECTRON LIMITED

Inventor： Shinji FURUKAWA ,  Naoki WATANABE ,  Hiroshi MIKI ,  Tooru KITADA ,  Yasuhiko KOJIMA

IPC: H01J37/34 ,  C23C14/34

CPC classification number: C23C14/3464 ,  C23C14/08 ,  C23C14/3485 ,  H01J37/3417 ,  H01J37/3444 ,  H01J37/3464 ,  H01J37/347

Abstract: System and method of insulating film deposition. A sputter deposition chamber comprises a pair of targets made of the same insulating material. Each target is applied with a high frequency power signal concurrently. A phase adjusting unit is used to adjust the phase difference between the high frequency power signals supplied to the pair of targets to a predetermined value, thereby improving the in-plane thickness distribution of a resultant film. The predetermined value is target material specific.

Abstract translation: 绝缘膜沉积的系统和方法。 溅射沉积室包括由相同绝缘材料制成的一对靶。 每个目标同时施加高频功率信号。 相位调整单元用于将提供给该对目标的高频功率信号之间的相位差调整为规定值，从而提高所得到的膜的面内厚度分布。 预定值是目标材料特定的。