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公开(公告)号:US20190252165A1
公开(公告)日:2019-08-15
申请号:US16246285
申请日:2019-01-11
Applicant: TOKYO ELECTRON LIMITED
Inventor: Masato SHINADA , Naoki WATANABE , Tetsuya MIYASHITA , Hiroaki CHIHAYA
CPC classification number: H01J37/3405 , C23C14/35 , H01J37/3417 , H01J37/3447 , H01J37/3452 , H01J2237/332
Abstract: A film forming system comprises a chamber, a stage, a holder, a cathode magnet, a shield, a first moving mechanism, and a second moving mechanism. The chamber provides a processing space. The stage is provided in the processing space and configured to support a substrate. The holder is configured to hold a target that is provided in the processing space. The cathode magnet is provided outside the chamber with respect to the target. The shield has a slit and is configured to block particles released from the target around the slit. The first moving mechanism is configured to move the shield between the stage and the target along a scanning direction substantially parallel to a surface of the substrate mounted on the stage. The second moving mechanism is configured to move the cathode magnet along the scanning direction.
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公开(公告)号:US20220220606A1
公开(公告)日:2022-07-14
申请号:US17638736
申请日:2020-07-21
Applicant: TOKYO ELECTRON LIMITED
Inventor: Tamaki TAKEYAMA , Hiroaki CHIHAYA , Motoi YAMAGATA , Manabu NAKAGAWASAI , Shinji ORIMOTO
IPC: C23C14/54 , C23C14/50 , C23C14/34 , H01L21/687
Abstract: There is provided a method for processing a substrate, comprising: preparing a substrate processing device including a rotatable stage on which a substrate is placed, a frozen heat transfer body fixed on a backside of the stage with a gap interposed therebetween and cooled to an extremely low temperature, a gas supply mechanism configured to supply to the gap a cooling gas for transferring a cold heat of the frozen heat transfer body to the stage, a rotation mechanism configured to rotate the stage, and a processing mechanism configured to process the substrate; preheating the stage such that a temperature of the stage reaches a steady cooling temperature within a fixed range; and after preheating, continuously processing a plurality of substrates by the processing mechanism while rotating the stage that has reached the steady cooling temperature in a state where a substrate having a specific temperature higher than or equal to room temperature is placed on the stage.
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公开(公告)号:US20190172690A1
公开(公告)日:2019-06-06
申请号:US16208391
申请日:2018-12-03
Applicant: TOKYO ELECTRON LIMITED
Inventor: Hiroaki CHIHAYA , Hiroshi SONE
Abstract: A substrate processing apparatus includes a supporting table having a mounting region for a substrate. A rotation shaft supporting a shutter extends in a vertical direction. The shutter is moved between a first region above the supporting table and a second region by rotating the rotation shaft about its central axis. The shutter includes a pipe having gas output holes. When the shutter is disposed in the first region, the gas output holes are located outside the mounting region in a rotation direction from the second region toward the first region. The minimum distance between the central axis and the gas output holes is smaller than or equal to the minimum distance between the central axis and the mounting region. The maximum distance between the central axis and the gas output holes is greater than equal to the maximum distance between the central axis and the mounting region.
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公开(公告)号:US20220236202A1
公开(公告)日:2022-07-28
申请号:US17575018
申请日:2022-01-13
Applicant: TOKYO ELECTRON LIMITED
Inventor: Einstein Noel ABARRA , Hiroaki CHIHAYA
Abstract: A holder temperature detection method which measures a temperature of a rotatable holder that holds a substrate is provided. The method comprises a step of irradiating a fluorescent body thermally mounted on the holder with a light pulse having a first wavelength, a step of detecting fluorescence having a second wavelength emitted from the fluorescent body due to the light pulse and a step of estimating the temperature of the holder based on the detected fluorescence.
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5.
公开(公告)号:US20210082777A1
公开(公告)日:2021-03-18
申请号:US17021846
申请日:2020-09-15
Applicant: TOKYO ELECTRON LIMITED
Inventor: Hiroaki CHIHAYA , Einstein Noel ABARRA , Shota ISHIBASHI
IPC: H01L21/66 , H01L43/12 , C23C14/56 , G01N27/72 , G01R33/032
Abstract: A film forming system for forming a magnetic film is provided. The film forming system includes a processing module configured to form the magnetic film on a substrate, a magnetization characteristic measuring device configured to measure magnetization characteristics of the magnetic film formed on the substrate in the processing module, and a transfer unit configured to transfer the substrate between the processing module and the magnetization characteristic measuring device. The magnetization characteristic measuring device includes a magnetic field applying mechanism having a permanent magnet magnetic circuit configured to apply a magnetic field to the substrate and adjust the magnetic field to be applied to the substrate, and a detector configured to detect magnetization characteristics of the substrate.
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公开(公告)号:US20220285197A1
公开(公告)日:2022-09-08
申请号:US17652545
申请日:2022-02-25
Applicant: Tokyo Electron Limited
Inventor: Hiroaki CHIHAYA , Yasuhiko KOJIMA , Einstein Noel ABARRA , Tetsuya MIYASHITA
IPC: H01L21/683
Abstract: A substrate processing apparatus includes: a stage including an electrostatic chuck configured to attract a substrate; a heater configured to heat the stage; a heating drive part configured to supply power to the heater so that a temperature of the stage becomes a target value; and a detector configured to detect an abnormality in attraction of the substrate by the electrostatic chuck, wherein the detector is further configured to detect the abnormality based on fluctuation of the power supplied to the heater, the fluctuation being generated by the attraction of the substrate by the electrostatic chuck.
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公开(公告)号:US20220285182A1
公开(公告)日:2022-09-08
申请号:US17652332
申请日:2022-02-24
Applicant: Tokyo Electron Limited
Inventor: Hiroaki CHIHAYA , Tetsuya MIYASHITA , Einstein Noel ABARRA , Yasuhiko KOJIMA
IPC: H01L21/67 , H01L21/683
Abstract: A substrate processing apparatus includes: a stage having an electrostatic chuck configured to attract a substrate; a measurement part configured to measure a temperature of the stage; and a detection part configured to detect an abnormality caused by attraction of the substrate by the electrostatic chuck, based on a fluctuation of the temperature of the stage.
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公开(公告)号:US20210285096A1
公开(公告)日:2021-09-16
申请号:US17184089
申请日:2021-02-24
Applicant: Tokyo Electron Limited
Inventor: Masato SHINADA , Tamaki TAKEYAMA , Kazunaga ONO , Naoyuki SUZUKI , Hiroaki CHIHAYA , Einstein Noel ABARRA
Abstract: A film thickness measurement apparatus includes: a stage that places a substrate having a film formed thereon and measures a thickness of the film in-situ in a film forming apparatus; a film thickness meter including a light emitter that emits light toward the substrate disposed on the stage and a light receiving sensor that receives the light reflected by the substrate for measuring the thickness of the film in-situ; a moving mechanism including a multi-joint arm that moves an irradiation point of the light on the substrate; a distance meter that measures a distance between the light receiving sensor and the irradiation point on the substrate; and a distance adjustor that adjusts the distance between the light receiving sensor and the irradiation point on the substrate.
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