公开(公告)号：US20220328343A1

公开(公告)日：2022-10-13

申请号：US17657962

申请日：2022-04-05

Applicant: Tokyo Electron Limited

Inventor： Takuya UMISE ,  Masato SHINADA ,  Tetsuya MIYASHITA

IPC: H01L21/687

Abstract: A processing method for processing a substrate includes: a first arrangement step of mounting, on a stage provided in a processing container to mount the substrate on the stage, a plate-shaped protective member which is prepared in advance at a location in the processing container different from a location on the stage and which is configured to protect an upper surface of the stage; an adjustment step of adjusting a distance between the stage and an annular cover member provided above an edge portion of the stage to a second distance different from a first distance between the stage and the cover member when the substrate is processed; and a pretreatment step of performing a pretreatment in the processing container to change a state in the processing container to a predetermined state, wherein the protective member has a thickness different from a thickness of the substrate.

公开(公告)号：US20220108880A1

公开(公告)日：2022-04-07

申请号：US17490574

申请日：2021-09-30

Applicant: TOKYO ELECTRON LIMITED

Inventor： Tetsuya MIYASHITA ,  Kanto NAKAMURA ,  Yusuke KIKUCHI

IPC: H01J37/34 ,  C23C14/34 ,  H01J37/32

Abstract: A magnetron sputtering apparatus is provided. The apparatus comprises: a vacuum chamber storing a substrate; a plurality of sputtering mechanisms, each including a target having one surface facing the inside of the vacuum chamber, a magnet array, and a moving mechanism for reciprocating the magnet array between a first position and a second position on the other surface of the target; a power supply for forming plasma by supplying power to targets of selected sputtering mechanisms for film formation; a gas supplier for supplying a gas for plasma formation into the vacuum chamber; and a controller for outputting a control signal, in performing the film formation, such that magnet arrays of selected and unselected sputtering mechanisms, extension lines of moving paths of the magnet arrays thereof intersecting each other in plan view, move synchronously or are located at certain positions so as to be distinct from each other.

公开(公告)号：US20190252165A1

公开(公告)日：2019-08-15

申请号：US16246285

申请日：2019-01-11

Applicant: TOKYO ELECTRON LIMITED

Inventor： Masato SHINADA ,  Naoki WATANABE ,  Tetsuya MIYASHITA ,  Hiroaki CHIHAYA

IPC: H01J37/34 ,  C23C14/35

CPC classification number: H01J37/3405 ,  C23C14/35 ,  H01J37/3417 ,  H01J37/3447 ,  H01J37/3452 ,  H01J2237/332

Abstract: A film forming system comprises a chamber, a stage, a holder, a cathode magnet, a shield, a first moving mechanism, and a second moving mechanism. The chamber provides a processing space. The stage is provided in the processing space and configured to support a substrate. The holder is configured to hold a target that is provided in the processing space. The cathode magnet is provided outside the chamber with respect to the target. The shield has a slit and is configured to block particles released from the target around the slit. The first moving mechanism is configured to move the shield between the stage and the target along a scanning direction substantially parallel to a surface of the substrate mounted on the stage. The second moving mechanism is configured to move the cathode magnet along the scanning direction.

公开(公告)号：US20230051865A1

公开(公告)日：2023-02-16

申请号：US17975619

申请日：2022-10-28

Applicant: Tokyo Electron Limited

Inventor： Takuya SEINO ,  Yasushi KODASHIMA ,  Naoki WATANABE ,  Hiroyuki TOSHIMA ,  Masato SHINADA ,  Tetsuya MIYASHITA

IPC: C23C14/56 ,  C23C14/50

Abstract: The PVD apparatus includes a chamber, a plurality of stages, a first target holder, a power supply mechanism, and a shield. The plurality of stages are provided inside the chamber, and each of the plurality of stages is configured to place at least one substrate on an upper surface thereof. The first target holder is configured to hold at least one target provided for one stage, the target being exposed to a space inside the chamber. The power supply mechanism supplies power to the target via the first target holder. The shield is provided inside the chamber and a part of the shield is disposed between a first stage and a second stage in the plurality of stages, and between a first processing space on the first stage and a second processing space on the second stage.

公开(公告)号：US20180155817A1

公开(公告)日：2018-06-07

申请号：US15832591

申请日：2017-12-05

Applicant: TOKYO ELECTRON LIMITED

Inventor： Junichi TAKEI ,  Naoyuki SUZUKI ,  Tetsuya MIYASHITA

IPC: C23C14/00 ,  C23C14/50

CPC classification number: C23C14/0063 ,  C23C14/0078 ,  C23C14/04 ,  C23C14/34 ,  C23C14/50 ,  C23C14/505 ,  H01J37/32357 ,  H01J37/32513 ,  H01J37/32715 ,  H01J37/32871 ,  H01J37/3447 ,  H01L21/67748

Abstract: A film forming apparatus includes: a chamber main body defining a chamber; a slit plate partitioning the chamber into a first space and a second space below the first space, the slit plate having a slit penetrating therethrough; a holder holding a target in the first space; a stage for supporting a substrate, the stage being movable in a moving direction perpendicular to a longitudinal direction of the slit in a moving area including an area directly below the slit; and a mechanism for moving the stage along the moving direction. In order to suppress scattering of particles from the target to another area other than the moving area in the second space through the slit, the stage has one or more protruding portions which provide upwardly and/or downwardly bent portions in a path around the stage between the slit and the another area in the second space.

公开(公告)号：US20140346037A1

公开(公告)日：2014-11-27

申请号：US14453754

申请日：2014-08-07

Applicant: TOKYO ELECTRON LIMITED

Inventor： Shigeru MIZUNO ,  Atsushi GOMI ,  Tetsuya MIYASHITA ,  Tatsuo HATANO ,  Yasushi MIZUSAWA

IPC: H01J37/34

CPC classification number: H01J37/3411 ,  C23C14/165 ,  C23C14/3471 ,  H01J37/32082 ,  H01J37/3408 ,  H01J37/3438 ,  H01J37/345 ,  H01J2237/332

Abstract: There is provided a sputter device in which a conductive target having a planar and circular shape is disposed so as to face a workpiece substrate mounted on a mounting part located within a vacuum chamber, includes: a direct current power supply configured to apply a negative direct current voltage to the target; an opposing electrode installed at the opposite side of the workpiece substrate from the target so as to face the target; and a target high-frequency power supply connected to the target and configured to supply high-frequency power to the target in order to generate a high-frequency electric field between the opposing electrode and the target, wherein the distance between the target and the workpiece substrate during a sputtering process being 30 mm or less.

Abstract translation: 提供了一种溅射装置，其中具有平面和圆形形状的导电靶设置成面对安装在位于真空室内的安装部件上的工件基板，包括：直流电源，被配置为施加负直接 目标电压; 对置电极，安装在与靶材相对的工件基板的相对侧，以面对目标; 以及连接到所述目标并被配置为向所述目标提供高频电力以在所述对置电极和所述目标之间产生高频电场的目标高频电源，其中所述目标和所述工件之间的距离 衬底在溅射过程中为30mm或更小。

公开(公告)号：US20140076494A1

公开(公告)日：2014-03-20

申请号：US14027367

申请日：2013-09-16

Applicant: Tokyo Electron Limited

Inventor： Tetsuya MIYASHITA ,  Kaoru YAMAMOTO

IPC: H01L21/677

CPC classification number: H01L21/67703 ,  H01L21/6719 ,  H01L21/67196

Abstract: A processing system includes a transfer chamber having therein a transfer unit for transferring a substrate and at least one processing unit connected to the transfer chamber. The transfer chamber is maintained in a vacuum state. The processing unit is configured to perform a processing on a substrate. The processing unit includes a first chamber in which a first processing is performed on a substrate, and a second chamber detachably installed in the first chambers. A second processing is performed on a substrate in the second chamber installed in the first chamber. Wall portions of the first chamber and the second chamber are maintained at different temperatures.

Abstract translation: 处理系统包括传送室，其中具有用于传送基板的传送单元和连接到传送室的至少一个处理单元。 传送室保持在真空状态。 处理单元被配置为对基板执行处理。 处理单元包括在基板上执行第一处理的第一室和可拆卸地安装在第一室中的第二室。 在安装在第一室中的第二室中的基板上进行第二处理。 第一室和第二室的壁部保持在不同的温度。

公开(公告)号：US20250059640A1

公开(公告)日：2025-02-20

申请号：US18938913

申请日：2024-11-06

Applicant: TOKYO ELECTRON LIMITED

Inventor： Koji MAEDA ,  Atsushi SHIMADA ,  Katsushi OIKAWA ,  Tetsuya MIYASHITA

IPC: C23C14/35 ,  C23C14/34 ,  C23C14/52 ,  C23C14/54 ,  H01J37/34

Abstract: A film forming apparatus includes a processing container, a substrate holder configured to hold a substrate inside the processing container, a cathode unit disposed above the substrate holder, and a gas introducing mechanism configured to introduce a plasma generating gas into the processing container. The cathode unit includes a target, a power supply configured to supply electric power to the target, a magnet provided on a rear side of the target, and a magnet driving part configured to drive the magnet. The magnet driving part includes an oscillation driver configured to oscillate the magnet along the target, and a perpendicular driver configured to drive the magnet in a direction perpendicular to a main surface of the target independently of driving performed by the oscillation driver. Sputtered particles are deposited on the substrate by magnetron sputtering.

公开(公告)号：US20220415688A1

公开(公告)日：2022-12-29

申请号：US17779873

申请日：2020-11-20

Applicant: Tokyo Electron Limited

Inventor： Tatsuo HATANO ,  Tetsuya MIYASHITA ,  Naoki WATANABE ,  Naoyuki SUZUKI

IPC: H01L21/677 ,  B25J9/12 ,  B25J11/00 ,  B25J9/02 ,  H02K7/14 ,  H02K41/02

Abstract: The present disclosure provides a substrate transfer apparatus. According to an aspect of the present disclosure, the substrate transfer apparatus includes: a planar motor provided in a transfer chamber and having coils arranged therein; a transfer unit movable on the planar motor; and a control unit configured to control an energization of the coils. The transfer unit includes two bases having magnets arranged thereon and configured to be movable on the planar motor, a substrate support member configured to support a substrate, and a link mechanism configured to connect the two bases and the substrate support member to each other.

公开(公告)号：US20220223390A1

公开(公告)日：2022-07-14

申请号：US17573368

申请日：2022-01-11

Applicant: TOKYO ELECTRON LIMITED

Inventor： Masato SHINADA ,  Tetsuya MIYASHITA ,  Naoki WATANABE

IPC: H01J37/34 ,  C23C14/34

Abstract: There is provided a film formation apparatus which forms a film on a substrate by sputtering. The apparatus comprises: a substrate holder configured to hold the substrate; and a plurality of cathodes configured to hold targets that emit sputtered particles, and connected to a power supply. At least one of the plurality of cathodes holds the targets of a plurality of types.