公开(公告)号：US10068765B2

公开(公告)日：2018-09-04

申请号：US15204279

申请日：2016-07-07

Applicant: Tokyo Electron Limited

Inventor： Junjun Liu ,  Eric M. Lee ,  Dorel I. Toma

IPC: H01L21/02 ,  H01L21/67 ,  B05D3/06

CPC classification number: H01L21/02348 ,  B05D3/062 ,  H01L21/67034 ,  H01L21/67115 ,  H01L21/67207

Abstract: A multi-step system and method for curing a dielectric film in which the system includes a drying system configured to reduce the amount of contaminants, such as moisture, in the dielectric film. The system further includes a curing system coupled to the drying system, and configured to treat the dielectric film with ultraviolet (UV) radiation and infrared (IR) radiation in order to cure the dielectric film.

公开(公告)号：US09443725B2

公开(公告)日：2016-09-13

申请号：US14877136

申请日：2015-10-07

Applicant: Tokyo Electron Limited

Inventor： Junjun Liu ,  Eric M. Lee ,  Dorel I. Toma

IPC: H01L21/42 ,  H01L21/02 ,  H01L21/67 ,  B05D3/06

CPC classification number: H01L21/02348 ,  B05D3/062 ,  H01L21/67034 ,  H01L21/67115 ,  H01L21/67207

Abstract: A multi-step system and method for curing a dielectric film in which the system includes a drying system configured to reduce the amount of contaminants, such as moisture, in the dielectric film. The system further includes a curing system coupled to the drying system, and configured to treat the dielectric film with ultraviolet (UV) radiation and infrared (IR) radiation in order to cure the dielectric film.

公开(公告)号：US09184047B2

公开(公告)日：2015-11-10

申请号：US14142340

申请日：2013-12-27

Applicant: Tokyo Electron Limited

Inventor： Junjun Liu ,  Eric M. Lee ,  Dorel L. Toma

IPC: H01L21/42 ,  H01L21/02 ,  H01L21/67

CPC classification number: H01L21/02348 ,  B05D3/062 ,  H01L21/67034 ,  H01L21/67115 ,  H01L21/67207

Abstract: A multi-step system and method for curing a dielectric film in which the system includes a drying system configured to reduce the amount of contaminants, such as moisture, in the dielectric film. The system further includes a curing system coupled to the drying system, and configured to treat the dielectric film with ultraviolet (UV) radiation and infrared (IR) radiation in order to cure the dielectric film.

公开(公告)号：US20150152556A1

公开(公告)日：2015-06-04

申请号：US14577013

申请日：2014-12-19

Applicant: Tokyo Electron Limited

Inventor： Jozef Brcka ,  Eric M. Lee ,  Jacques Faguet ,  Hongyu Henry Yue

IPC: C23C16/50 ,  C23C16/04 ,  C23C16/48

CPC classification number: C23C16/50 ,  A61F2/00 ,  B03C5/005 ,  B03C5/026 ,  C12M3/00 ,  C12M21/08 ,  C12M33/00 ,  C23C16/04 ,  C23C16/48 ,  H01J37/32009 ,  H01J37/32697 ,  H01L21/02612 ,  H01L21/67011

Abstract: A processing method and apparatus uses at least one electric field applicator (34) biased to produce a spatial-temporal electric field to affect a processing medium (26), suspended nano-objects (28) or the substrate (30) in processing, interacting with the dipole properties of the medium (26) or particles to construct structure on the substrate (30). The apparatus may include a magnetic field, an acoustic field, an optical force, or other generation device. The processing may affect selective localized layers on the substrate (30) or may control orientation of particles in the layers, control movement of dielectrophoretic particles or media, or cause suspended particles of different properties to follow different paths in the processing medium (26). Depositing or modifying a layer on the substrate (30) may be carried out. Further, the processing medium (26) and electrical bias may be selected to prepare at least one layer on the substrate (30) for bonding the substrate (30) to a second substrate, or to deposit carbon nanotubes (CNTs) with a controlled orientation on the substrate.

Abstract translation: 处理方法和装置使用至少一个电场施加器（34），其被偏置以产生空间 - 时间电场，以影响处理介质（26），悬浮的纳米物体（28）或基板（30）在处理中相互作用 其中介质（26）或颗粒的偶极子性质在衬底（30）上构造结构。 该装置可以包括磁场，声场，光学力或其他生成装置。 处理可能影响基底（30）上的选择性局部层，或者可以控制层中的颗粒的取向，控制介电电泳颗粒或介质的移动，或引起不同性质的悬浮颗粒遵循处理介质（26）中的不同路径。 可以在衬底（30）上沉积或修饰一层。 此外，可以选择处理介质（26）和电偏压以在衬底（30）上制备用于将衬底（30）结合到第二衬底的至少一个层，或者以受控的方向沉积碳纳米管（CNT） 在基板上。