Abstract:
Embodiments of systems and methods for a poly-phased inductively coupled plasma source are described. In an embodiment, a system may include a metal source configured to supply a metal for ionized physical vapor deposition on a substrate in a process chamber. The system may also include a high-density plasma source configured to generate a dense plasma, the high-density plasma source comprising a plurality of inductively coupled antennas. Additionally, the system may include a substrate bias source configured to provide a potential necessary to thermalize and ionize the plasma. In such embodiments, each antenna is configured to receive power at a phase orientation determined according to a phase arrangement.
Abstract:
Embodiments of methods and systems for an inductively coupled plasma sweeping source for an IPVD system. In an embodiment, a method includes providing a large size substrate in a processing chamber. The method may also include generating from a metal source a sputtered metal onto the substrate. Additionally, the method may include creating a high density plasma from a high density plasma source and applying the high density plasma in a sweeping operation without involving moving parts. The method may also include controlling a plurality of operating variables in order to meet one or more plasma processing objectives.
Abstract:
Embodiments of systems and methods for a poly-phased inductively coupled plasma source are described. In an embodiment, a system may include a metal source configured to supply a metal for ionized physical vapor deposition on a substrate in a process chamber. The system may also include a high-density plasma source configured to generate a dense plasma, the high-density plasma source comprising a plurality of inductively coupled antennas. Additionally, the system may include a substrate bias source configured to provide a potential necessary to thermalize and ionize the plasma. In such embodiments, each antenna is configured to receive power at a phase orientation determined according to a phase arrangement.
Abstract:
Embodiments of methods and systems for an inductively coupled plasma sweeping source for an IPVD system. In an embodiment, a method includes providing a large size substrate in a processing chamber. The method may also include generating from a metal source a sputtered metal onto the substrate. Additionally, the method may include creating a high density plasma from a high density plasma source and applying the high density plasma in a sweeping operation without involving moving parts. The method may also include controlling a plurality of operating variables in order to meet one or more plasma processing objectives.
Abstract:
A method of operating a filament assisted chemical vapor deposition (FACVD) system. The method includes depositing a film on a substrate in a reactor of the FACVD system. During the depositing, a DC power is supplied to a heater assembly to thermally decompose a film forming material. The method also includes cleaning the heater assembly, or an interior surface of the reactor, or both. During the cleaning, an alternating current is supplied to the heater assembly to energize a cleaning media into a plasma.
Abstract:
One or more electrodes are attached to an electrically permeable substrate attached to an incubator and energized with A.C. signals, D.C. signals or both A.C. and D.C signals. E-fields emitted from the electrodes pass through the substrate and into the incubator. The e-fields generate or apply dielectrophoresis (DEP) forces on small particles suspended in a liquid inside the incubator. The strength and direction of the DEP forces are controlled and manipulated by the manipulating the signals and can manipulate the motion of the suspended particles. The shapes of the electrodes help shape the generated e-fields and facilitate complex movements of the suspended particles. The suspended particles can be stem cells in a nutrient rich solution.
Abstract:
A method of operating a filament assisted chemical vapor deposition (FACVD) system. The method includes depositing a film on a substrate in a reactor of the FACVD system. During the depositing, a DC power is supplied to a heater assembly to thermally decompose a film forming material. The method also includes cleaning the heater assembly, or an interior surface of the reactor, or both. During the cleaning, an alternating current is supplied to the heater assembly to energize a cleaning media into a plasma.
Abstract:
One or more electrodes are attached to an electrically permeable substrate attached to an incubator and energized with A.C. signals, D.C. signals or both A.C. and D.C signals. E-fields emitted from the electrodes pass through the substrate and into the incubator. The e-fields generate or apply dielectrophoresis (DEP) forces on small particles suspended in a liquid inside the incubator. The strength and direction of the DEP forces are controlled and manipulated by the manipulating the signals and can manipulate the motion of the suspended particles. The shapes of the electrodes help shape the generated e-fields and facilitate complex movements of the suspended particles. The suspended particles can be stem cells in a nutrient rich solution.
Abstract:
A processing method and apparatus uses at least one electric field applicator (34) biased to produce a spatial-temporal electric field to affect a processing medium (26), suspended nano-objects (28) or the substrate (30) in processing, interacting with the dipole properties of the medium (26) or particles to construct structure on the substrate (30). The apparatus may include a magnetic field, an acoustic field, an optical force, or other generation device. The processing may affect selective localized layers on the substrate (30) or may control orientation of particles in the layers, control movement of dielectrophoretic particles or media, or cause suspended particles of different properties to follow different paths in the processing medium (26). Depositing or modifying a layer on the substrate (30) may be carried out. Further, the processing medium (26) and electrical bias may be selected to prepare at least one layer on the substrate (30) for bonding the substrate (30) to a second substrate, or to deposit carbon nanotubes (CNTs) with a controlled orientation on the substrate.