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公开(公告)号：US09947556B2
公开(公告)日：2018-04-17
申请号：US14321054
申请日：2014-07-01
Applicant: TOKYO ELECTRON LIMITED
Inventor： Yasushi Takiguchi , Taro Yamamoto , Hideharu Kyouda , Koshi Muta
IPC: B08B1/04 , B08B3/04 , H01L21/67 , H01L21/687
CPC classification number: H01L21/67051 , H01L21/67046 , H01L21/68792
Abstract: There are provided first and second cleaning members which are configured to clean a central zone in a rear surface of a wafer when the wafer held by an absorption pad is horizontally held, and configured to clean a peripheral zone in the rear surface of the wafer when the wafer is held by the spin chuck. Due to the provision of the first and second cleaning members, detergency can be improved as compared with a case in which only one cleaning member is used. The first and second cleaning members are configured to be horizontally turned by a common turning shaft. When the central zone in the rear surface of the wafer is cleaned, the turning shaft is located to be overlapped with the wafer. Since the turning shaft is located by using the moving area of the wafer, a size of an apparatus can be reduced.
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2.发明授权公开(公告)号：US11524383B2
公开(公告)日：2022-12-13
申请号：US16084690
申请日：2016-12-06
Applicant: Tokyo Electron Limited
Inventor： Minoru Kubota , Hideharu Kyouda
IPC: H01L21/02 , B24B37/013 , H01L21/67 , H01L21/3105 , H01L21/027 , H01L21/66
Abstract: An end of polishing of a wafer is determined for each of wafers at a high accuracy. A wafer processing method includes: a first process of acquiring an initial state of a processing target surface of a wafer; a second process of forming a coating film on the wafer after the first process; a third process of polishing the processing target surface of the wafer by a polishing member based on initial polishing conditions in a state where the polishing member is in contact with the processing target surface of the wafer; a fourth process of acquiring a processed state of the processing target surface of the wafer after the third process; and a fifth process of determining an end of polishing, an insufficiency in polishing, or an excess in polishing based on the initial state and the processed state.
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公开(公告)号：US10289004B2
公开(公告)日：2019-05-14
申请号：US15338638
申请日：2016-10-31
Applicant: TOKYO ELECTRON LIMITED
Inventor： Kousuke Yoshihara , Hideharu Kyouda , Koshi Muta , Taro Yamamoto , Yasushi Takiguchi
Abstract: A developing apparatus includes: a substrate holder that hold a substrate horizontally; a developer nozzle that supplies a developer onto the substrate to form a liquid puddle; a turning flow generation mechanism including a rotary member that rotates about an axis perpendicular to the substrate while the rotary member is being in contact with the liquid puddle thereby to generate a turning flow in the liquid puddle of the developer formed on the substrate; and a moving mechanism for moving the turning flow generation mechanism along a surface of the substrate. The line-width uniformity of a pattern can be improved by forming turning flows in a desired region of the substrate and stirring the developer.
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4.发明申请公开(公告)号：US20190084118A1
公开(公告)日：2019-03-21
申请号：US16084690
申请日：2016-12-06
Applicant: Tokyo Electron Limited
Inventor： Minoru Kubota , Hideharu Kyouda
IPC: B24B37/013 , H01L21/027 , H01L21/3105 , H01L21/66
Abstract: An end of polishing of a wafer is determined for each of wafers at a high accuracy. A wafer processing method includes: a first process of acquiring an initial state of a processing target surface of a wafer; a second process of forming a coating film on the wafer after the first process; a third process of polishing the processing target surface of the wafer by a polishing member based on initial polishing conditions in a state where the polishing member is in contact with the processing target surface of the wafer; a fourth process of acquiring a processed state of the processing target surface of the wafer after the third process; and a fifth process of determining an end of polishing, an insufficiency in polishing, or an excess in polishing based on the initial state and the processed state.
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公开(公告)号：US10014190B2
公开(公告)日：2018-07-03
申请号：US14339539
申请日：2014-07-24
Applicant: TOKYO ELECTRON LIMITED
Inventor： Yasushi Takiguchi , Koki Yoshimura , Taro Yamamoto , Hideharu Kyouda , Koshi Muta
IPC: H01L21/67
CPC classification number: H01L21/67051 , H01L21/6715
Abstract: A liquid processing apparatus for performing liquid processing with respect to a substrate using processing fluid, includes: a plurality of substrate holding units arranged side by side in a left-right direction; a nozzle configured to supply the processing fluid to the substrate held in each of the substrate holding units; and a nozzle moving mechanism configured to move the nozzle forward and backward in a front-rear direction intersecting an arrangement direction of the substrate holding units between a supplying position in which the processing fluid is supplied to a region including a central portion of the substrate and a waiting position which is defined at a rear side of a row of the substrate holding units opposite to a front side of the row of the substrate holding units at which the substrate is loaded and unloaded.
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Patent Agency Ranking
公开(公告)号：US09568829B2
公开(公告)日：2017-02-14
申请号：US14449419
申请日：2014-08-01
Applicant: TOKYO ELECTRON LIMITED
Inventor： Kousuke Yoshihara , Hideharu Kyouda , Koshi Muta , Taro Yamamoto , Yasushi Takiguchi , Masahiro Fukuda
CPC classification number: G03F7/3021 , B05C5/02 , B05C5/027 , B05C11/08 , B05D1/005 , B05D1/26 , G03F7/30 , H01L21/6715
Abstract: A developing method includes: horizontally holding an exposed substrate by a substrate holder; forming a liquid puddle on a part of the substrate, by supplying a developer from a developer nozzle; rotating the substrate; spreading the liquid puddle on a whole surface of the substrate, by moving the developer nozzle such that a supply position of the developer on the rotating substrate is moved in a radial direction of the substrate; bringing, simultaneously with the spreading of the liquid puddle on the whole surface of the substrate, a contact part into contact with the liquid puddle, the contact part being configured to be moved together with the developer nozzle and having a surface opposed to the substrate which is smaller than the surface of the substrate. According to this method, an amount of liquid falling down to the outside of the substrate can be inhibited. In addition, since the rotating speed of the substrate can be decreased, spattering of the developer can be inhibited. Further, a throughput can be improved by stirring the developer.
Abstract translation: 显影方法包括：通过基板保持器水平保持曝光的基板; 通过从显影剂喷嘴提供显影剂，在基底的一部分上形成液体熔池; 旋转基板; 通过使显影剂喷嘴移动使得旋转基板上的显影剂的供给位置沿基板的径向方向移动，将液体熔池分散在基板的整个表面上; 使液体熔池在基板的整个表面上的扩展同时与接触部分与液体熔池接触，接触部分被构造成与显影剂喷嘴一起移动并且具有与基板相对的表面， 小于衬底的表面。 根据该方法，能够抑制向基板外侧落下的液体的量。 此外，由于可以降低基板的旋转速度，可以抑制显影剂的飞溅。 此外，可以通过搅拌显影剂来提高生产量。
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公开(公告)号：US11031261B2
公开(公告)日：2021-06-08
申请号：US16014308
申请日：2018-06-21
Applicant: TOKYO ELECTRON LIMITED
Inventor： Yasushi Takiguchi , Koki Yoshimura , Taro Yamamoto , Hideharu Kyouda , Koshi Muta
IPC: H01L21/67
Abstract: A liquid processing apparatus for performing liquid processing with respect to a substrate using processing fluid, includes: a plurality of substrate holding units arranged side by side in a left-right direction; a nozzle configured to supply the processing fluid to the substrate held in each of the substrate holding units; and a nozzle moving mechanism configured to move the nozzle forward and backward in a front-rear direction intersecting an arrangement direction of the substrate holding units between a supplying position in which the processing fluid is supplied to a region including a central portion of the substrate and a waiting position which is defined at a rear side of a row of the substrate holding units opposite to a front side of the row of the substrate holding units at which the substrate is loaded and unloaded.
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公开(公告)号：US10120285B2
公开(公告)日：2018-11-06
申请号：US15374081
申请日：2016-12-09
Applicant: Tokyo Electron Limited
Inventor： Kousuke Yoshihara , Hideharu Kyouda , Koshi Muta , Taro Yamamoto , Yasushi Takiguchi , Masahiro Fukuda
Abstract: A developing apparatus including a horizontal substrate holder, a rotating mechanism to rotate the substrate holder, a developer nozzle to supply a developer onto a part of the substrate to form a liquid puddle, a moving mechanism to move the developer nozzle in a radial direction of the rotating substrate, a contact part that moves with the developer nozzle and has a surface opposed to the substrate, which is smaller than the surface of the substrate, and a control unit to output a control signal such that a supply position of the developer on the substrate is moved in the radial direction of the substrate so that the liquid puddle is spread out on a whole surface of the substrate while the contact part is in contact with the liquid puddle.
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9.发明授权Coating and developing apparatus, coating film forming method, and storage medium storing program for performing the method 有权涂覆和显影装置，涂膜形成方法和用于执行该方法的存储介质存储程序公开(公告)号：US09214363B2
公开(公告)日：2015-12-15
申请号：US13937833
申请日：2013-07-09
Applicant: TOKYO ELECTRON LIMITED
Inventor： Hideharu Kyouda , Taro Yamamoto
CPC classification number: H01L21/67017 , G03F7/11 , G03F7/168 , G03F7/2041 , G03F7/70341 , H01L21/67051 , H01L21/6715
Abstract: Disclosed is a technique for preventing a water-repellent protective film formed on a resist film from peeling off during immersion exposure. A resist film is formed on the front surface of a substrate and then the peripheral edge portion of the resist film is removed. Before forming a water-repellent protective film onto the resist film, an adhesion-improving fluid, preferably hexamethyldisilazane gas, for improving the adhesion of the water-repellent protective film, is supplied to the region from which the resist film is removed.
Abstract translation: 公开了一种防止在浸渍曝光期间形成在抗蚀剂膜上的防水保护膜被剥离的技术。 在基板的前表面上形成抗蚀剂膜，然后除去抗蚀剂膜的周边部分。 在抗蚀剂膜上形成防水保护膜之前，为了提高防水性保护膜的粘附性，提供了粘附改善液，优选六甲基二硅氮烷气体，其中除去抗蚀剂膜的区域。
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公开(公告)号：US09575411B2
公开(公告)日：2017-02-21
申请号：US14450704
申请日：2014-08-04
Applicant: TOKYO ELECTRON LIMITED
Inventor： Kousuke Yoshihara , Hideharu Kyouda , Koshi Muta , Taro Yamamoto , Yasushi Takiguchi
CPC classification number: G03F7/30 , B05C5/02 , B05C5/0287 , B05C11/08 , B05D1/005 , B05D1/26 , G03F7/3021 , H01L21/6715
Abstract: A developing apparatus includes: a substrate holder that hold a substrate horizontally; a developer nozzle that supplies a developer onto the substrate to form a liquid puddle; a turning flow generation mechanism including a rotary member that rotates about an axis perpendicular to the substrate while the rotary member is being in contact with the liquid puddle thereby to generate a turning flow in the liquid puddle of the developer formed on the substrate; and a moving mechanism for moving the turning flow generation mechanism along a surface of the substrate. The line-width uniformity of a pattern can be improved by forming turning flows in a desired region of the substrate and stirring the developer.
Abstract translation: 显影装置包括：水平保持基板的基板支架; 显影剂喷嘴，其将显影剂供应到所述基板上以形成液体熔池; 旋转流产生机构，其包括旋转构件，所述旋转构件在所述旋转构件与所述液体熔池接触的同时围绕垂直于所述基板的轴旋转，从而在形成在所述基板上的所述显影剂的液体池中产生转向流; 以及用于沿着基板的表面移动转向流产生机构的移动机构。 可以通过在衬底的期望区域中形成转向流并搅拌显影剂来改善图案的线宽均匀性。
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