公开(公告)号：US09217922B2

公开(公告)日：2015-12-22

申请号：US13949733

申请日：2013-07-24

Applicant: TOKYO ELECTRON LIMITED

Inventor： Minoru Kubota ,  Kousuke Yoshihara ,  Kouzou Tachibana

IPC: G03F7/16 ,  B05C5/02 ,  H01L21/67 ,  B05C11/10 ,  B05C11/08 ,  B08B3/10 ,  B08B3/08

CPC classification number: G03F7/16 ,  B05C5/0258 ,  B05C11/08 ,  B05C11/1002 ,  B08B3/08 ,  B08B3/10 ,  G03F7/162 ,  H01L21/67051 ,  H01L21/6715 ,  H01L21/67178

Abstract: A liquid processing apparatus includes a substrate holding unit arranged within a processing cup and configured to horizontally hold a substrate, a rotating mechanism configured to rotate the substrate holding unit about a vertical axis, a processing liquid supply unit configured to supply a processing liquid onto a surface of the substrate, and an exhaust mechanism configured to discharge an atmospheric gas around the substrate. The exhaust mechanism includes an exhaust flow path connected to an exhaust port formed at the processing cup, a circulation flow path branched from the exhaust flow path and configured to communicate with the processing cup, a gas liquid separator, a first regulator valve installed at one end of the exhaust flow path, and a second regulator valve installed at the other end of the exhaust flow path.

Abstract translation: 液体处理装置包括布置在处理杯内并被配置为水平地保持基板的基板保持单元，被配置为使基板保持单元围绕垂直轴旋转的旋转机构，配置成将处理液供给到 基板的表面，以及构造成将基板周围的大气气体排出的排气机构。 排气机构包括连接到形成在处理杯处的排气口的排气流路，从排气流路分支配置成与处理杯连通​​的循环流路，气液分离器，安装在处理杯一侧的第一调节阀 排气流路的端部，以及安装在排气流路的另一端的第二调节阀。

公开(公告)号：US11524383B2

公开(公告)日：2022-12-13

申请号：US16084690

申请日：2016-12-06

Applicant: Tokyo Electron Limited

Inventor： Minoru Kubota ,  Hideharu Kyouda

IPC: H01L21/02 ,  B24B37/013 ,  H01L21/67 ,  H01L21/3105 ,  H01L21/027 ,  H01L21/66

Abstract: An end of polishing of a wafer is determined for each of wafers at a high accuracy. A wafer processing method includes: a first process of acquiring an initial state of a processing target surface of a wafer; a second process of forming a coating film on the wafer after the first process; a third process of polishing the processing target surface of the wafer by a polishing member based on initial polishing conditions in a state where the polishing member is in contact with the processing target surface of the wafer; a fourth process of acquiring a processed state of the processing target surface of the wafer after the third process; and a fifth process of determining an end of polishing, an insufficiency in polishing, or an excess in polishing based on the initial state and the processed state.

公开(公告)号：US20190084118A1

公开(公告)日：2019-03-21

申请号：US16084690

申请日：2016-12-06

Applicant: Tokyo Electron Limited

Inventor： Minoru Kubota ,  Hideharu Kyouda

IPC: B24B37/013 ,  H01L21/027 ,  H01L21/3105 ,  H01L21/66

Abstract: An end of polishing of a wafer is determined for each of wafers at a high accuracy. A wafer processing method includes: a first process of acquiring an initial state of a processing target surface of a wafer; a second process of forming a coating film on the wafer after the first process; a third process of polishing the processing target surface of the wafer by a polishing member based on initial polishing conditions in a state where the polishing member is in contact with the processing target surface of the wafer; a fourth process of acquiring a processed state of the processing target surface of the wafer after the third process; and a fifth process of determining an end of polishing, an insufficiency in polishing, or an excess in polishing based on the initial state and the processed state.

公开(公告)号：US10921713B2

公开(公告)日：2021-02-16

申请号：US16560137

申请日：2019-09-04

Applicant: TOKYO ELECTRON LIMITED

Inventor： Koshi Muta ,  Hideharu Kyoda ,  Minoru Kubota

IPC: G03F7/30 ,  B05D1/00 ,  B05C11/08 ,  H01L21/67

Abstract: A developing method includes: forming a liquid pool of a diluted developing solution diluted with pure water in a central portion of a substrate; forming a liquid film of the diluted developing solution on a surface of the substrate by accelerating rotation of the substrate to diffuse the liquid pool of the diluted developing solution on the entire surface of the substrate; and then supplying a developing solution onto the substrate. Supplying a developing solution includes: supplying the developing solution from a developing solution supply nozzle having a liquid contact surface while securing a gap having a predetermined size between the developing solution supply nozzle and the substrate; and moving the developing solution supply nozzle in a radial direction passing through a center of the substrate while forming a liquid pool of the developing solution between the substrate and the liquid contact surface of the developing solution supply nozzle.

公开(公告)号：US10048664B2

公开(公告)日：2018-08-14

申请号：US14963802

申请日：2015-12-09

Applicant: Tokyo Electron Limited

Inventor： Takafumi Hasimoto ,  Shinichi Hatakeyama ,  Naoki Shibata ,  Kousuke Yoshihara ,  Minoru Kubota ,  Hiroyuki Ide

IPC: B05C5/00 ,  G05B15/02 ,  H01L21/02 ,  B05C13/02 ,  B05B1/00 ,  B05D1/00 ,  G03F7/16 ,  H01L21/67 ,  B05D3/04 ,  B05D3/10

Abstract: There is provided a coating method which can apply a coating solution uniformly onto a substrate surface while reducing the amount of the coating solution supplied. The coating method for applying a coating solution onto a wafer includes the steps of: supplying a solvent for the coating solution onto the wafer to form an annular liquid film of the solvent in a peripheral area of the wafer; supplying the coating solution to the center of the wafer while rotating the wafer at a first rotational speed (time t1-t2); and allowing the coating solution to spread on the wafer by rotating the wafer at a second rotational speed which is higher than the first rotational speed (time t4-t5). The supply of the solvent is continued until just before the coating solution comes into contact with the liquid film of the solvent (time t0-t3).

公开(公告)号：US09776199B2

公开(公告)日：2017-10-03

申请号：US14658461

申请日：2015-03-16

Applicant: TOKYO ELECTRON LIMITED

Inventor： Minoru Kubota

IPC: B05D3/12 ,  B05B12/02 ,  B05D1/00 ,  H01L21/67 ,  G06F19/00 ,  H01L21/00 ,  B05B13/02 ,  B05B13/04

CPC classification number: B05B12/02 ,  B05B13/0242 ,  B05B13/041 ,  B05D1/005 ,  G06F19/00 ,  H01L21/00 ,  H01L21/6715

Abstract: A coating apparatus includes: a rotation holding unit configured to hold and rotate a substrate; a coating liquid supply unit configured to supply a coating liquid onto a surface of the substrate; and a control unit configured to control the rotation holding unit and the coating liquid supply unit. The control unit performs: controlling the coating liquid supply unit to supply the coating liquid onto an encircling line surrounding a rotational center of the substrate while controlling the rotation holding unit to rotate the substrate; followed by controlling the coating liquid supply unit to supply the coating liquid onto a central area; and followed by controlling the rotation holding unit to rotate the substrate at an angular velocity greater than that when the coating liquid is supplied onto the encircling line.

公开(公告)号：US10281822B2

公开(公告)日：2019-05-07

申请号：US15256948

申请日：2016-09-06

Applicant: Tokyo Electron Limited

Inventor： Minoru Kubota

IPC: G03F7/32 ,  G03F7/06 ,  H01L21/67 ,  B05D1/00 ,  G03F7/30

Abstract: A developing treatment method supplies a developing solution onto a substrate to develop a resist film on the substrate with a predetermined pattern exposed thereon. The method supplies pure water to a central portion of the substrate to form a puddle of the pure water, and then moves a nozzle in a radial direction passing through a center of the substrate while supplying a developing solution to the puddle of the pure water from the nozzle with a wetted surface of the nozzle in contact with the puddle of the pure water, to form a puddle of a diluted developing solution on the substrate. The method then rotates the substrate to diffuse the puddle of the diluted developing solution over an entire surface of the substrate; and then supplies a developing solution to the substrate to develop the substrate.

公开(公告)号：US10126665B2

公开(公告)日：2018-11-13

申请号：US14993647

申请日：2016-01-12

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kenichi Miyamoto ,  Minoru Kubota

IPC: G03F7/20

Abstract: A peripheral exposure method for performing an exposure treatment by illuminating light to a periphery of a resist film formed on a substrate to be processed is discussed. The method includes rotating the substrate to be processed on a horizontal plane, bringing a coolant gas into contact with the periphery of the resist film of the substrate to be processed which is being rotated, and cooling the substrate to be processed. Further, the method also includes measuring a temperature of the substrate to be processed, wherein when the temperature of the substrate to be processed is equal to or less than a predetermined temperature, the exposure treatment is performed.

公开(公告)号：US10459340B2

公开(公告)日：2019-10-29

申请号：US14953109

申请日：2015-11-27

Applicant: TOKYO ELECTRON LIMITED

Inventor： Koshi Muta ,  Hideharu Kyoda ,  Minoru Kubota

IPC: G03F7/30 ,  B05D1/00 ,  B05C11/08 ,  H01L21/67

Abstract: A developing method includes: forming a liquid pool of a diluted developing solution diluted with pure water in a central portion of a substrate; forming a liquid film of the diluted developing solution on a surface of the substrate by accelerating rotation of the substrate to diffuse the liquid pool of the diluted developing solution on the entire surface of the substrate; and then supplying a developing solution onto the substrate. Supplying a developing solution includes: supplying the developing solution from a developing solution supply nozzle having a liquid contact surface while securing a gap having a predetermined size between the developing solution supply nozzle and the substrate; and moving the developing solution supply nozzle in a radial direction passing through a center of the substrate while forming a liquid pool of the developing solution between the substrate and the liquid contact surface of the developing solution supply nozzle.

公开(公告)号：US09268230B2

公开(公告)日：2016-02-23

申请号：US13773741

申请日：2013-02-22

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kenichi Miyamoto ,  Minoru Kubota

IPC: G03F7/20

CPC classification number: G03F7/70875 ,  G03F7/2028 ,  G03F7/2041

Abstract: A peripheral exposure method for performing an exposure treatment by illuminating light to a periphery of a resist film formed on a substrate to be processed is discussed. The method includes rotating the substrate to be processed on a horizontal plane, bringing a coolant gas into contact with the periphery of the resist film of the substrate to be processed which is being rotated, and cooling the substrate to be processed. Further, the method also includes measuring a temperature of the substrate to be processed, wherein when the temperature of the substrate to be processed is equal to or less than a predetermined temperature, the exposure treatment is performed.

Abstract translation: 讨论了通过将光照射到形成在待处理基板上的抗蚀剂膜的周围进行曝光处理的外围曝光方法。 该方法包括使待处理基板在水平面上旋转，使冷却剂气体与要旋转的被处理基板的抗蚀膜的周边接触，并冷却待处理的基板。 此外，该方法还包括测量待处理的基板的温度，其中当待处理的基板的温度等于或小于预定温度时，进行曝光处理。