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    METHOD FOR PROCESSING A SUBSTRATE AND SUBSTRATE PROCESSING APPARATUS
    3.
    发明申请
    METHOD FOR PROCESSING A SUBSTRATE AND SUBSTRATE PROCESSING APPARATUS 有权
    用于处理基板和基板处理装置的方法

    公开(公告)号：US20150225849A1

    公开(公告)日：2015-08-13

    申请号：US14613656

    申请日：2015-02-04

    申请人： Tokyo Electron Limited

    发明人： Hitoshi KATO ,  Jun SATO ,  Masahiro MURATA ,  Kentaro OSHIMO ,  Tomoko SUGANO ,  Shigehiro MIURA

    IPC分类号： C23C16/458 ,  C23C16/44 ,  C23C16/52 ,  H01L21/02 ,  C23C16/455

    CPC分类号： C23C16/4584 ,  C23C16/345 ,  C23C16/45519 ,  C23C16/45538 ,  C23C16/45551 ,  C23C16/507 ,  C23C16/52 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/0228

    摘要： A method for processing a substrate is provided. According to the method, a process gas is supplied to a surface of a substrate, and then a separation gas is supplied to the surface of the substrate. Moreover, a first plasma processing gas is supplied to the surface of the substrate in a first state in which a distance between the first plasma generation unit and the turntable is set at a first distance, and a second plasma processing gas is supplied to the surface of the substrate in a second state in which a distance between the second plasma generation unit and the turntable is set at a second distance shorter than the first distance. Furthermore, the separation gas is supplied to the surface of the substrate.

    摘要翻译： 提供了一种处理基板的方法。 根据该方法，将处理气体供给到基板的表面，然后将分离气体供给到基板的表面。 此外，在第一等离子体生成单元和转台之间的距离设定为第一距离的第一状态下，将第一等离子体处理气体供给到基板的表面，并且向表面供给第二等离子体处理气体 在第二状态下，第二等离子体产生单元和转台之间的距离被设定为比第一距离短的第二距离。 此外，分离气体被供给到基板的表面。

    METHOD OF DEPOSITING A FILM, RECORDING MEDIUM, AND FILM DEPOSITION APPARATUS
    4.
    发明申请
    METHOD OF DEPOSITING A FILM, RECORDING MEDIUM, AND FILM DEPOSITION APPARATUS 有权
    沉积薄膜，记录介质和薄膜沉积装置的方法

    公开(公告)号：US20150004332A1

    公开(公告)日：2015-01-01

    申请号：US14303763

    申请日：2014-06-13

    申请人： Tokyo Electron Limited

    发明人： Hitoshi KATO ,  Masahiro MURATA ,  Kentaro OSHIMO ,  Shigehiro MIURA

    IPC分类号： H01J37/32 ,  C23C16/34 ,  C23C16/50

    CPC分类号： C23C16/345 ,  C23C16/45536 ,  C23C16/45557 ,  H01J37/321 ,  H01J37/32449 ,  H01J37/32623 ,  H01J37/32651 ,  H01J37/32715 ,  H01J37/32779 ,  H01J37/32816

    摘要： A method of depositing a thin film on a substrate inside a vacuum chamber includes a first process that deposits a first film on the substrate, the first process including a process of supplying an active species that is obtained by changing a gas to plasma and is related to a quality of the thin film to the substrate; and a second process that deposits a second film that is the same type as that of the first film on the first film, the second process including a process of supplying the active species to the substrate so that a supply quantity of the active species per a unit film thickness is greater than a first supply quantity of the active species per the unit film thickness in the first process by adjusting a controlled parameter.

    摘要翻译： 在真空室内的基板上沉积薄膜的方法包括将第一膜沉积在基板上的第一工艺，第一工艺包括提供通过将气体改变为等离子体获得的活性物质的过程，并且是相关的 以薄膜为基质的质量; 以及在第一膜上沉积与第一膜相同类型的第二膜的第二工艺，第二工艺包括向基板供应活性物质的方法，使得每一种活性物质的供应量 通过调整受控参数，单位膜厚度大于第一工序中单位膜厚度的活性物质的第一供给量。

    METHOD OF DEPOSITING FILM
    7.
    发明申请
    METHOD OF DEPOSITING FILM 有权
    沉积膜的方法

    公开(公告)号：US20150011087A1

    公开(公告)日：2015-01-08

    申请号：US14308880

    申请日：2014-06-19

    申请人： Tokyo Electron Limited

    发明人： Kentaro OSHIMO ,  Masato KOAKUTSU ,  Hiroko SASAKI ,  Hiroaki IKEGAWA

    IPC分类号： H01L21/285

    CPC分类号： H01L21/28562 ,  C23C16/34 ,  C23C16/45551 ,  C23C16/56 ,  H01L21/32051 ,  H01L28/00

    摘要： A method of depositing a film is provided. In the method, a first process gas and a second process gas that react with each other is sequentially supplied to cause an atomic layer or a molecular layer of a reaction product of the first process gas and the second process gas to deposit on a substrate in a chamber by repeating a cycle of sequentially supplying the first process gas and the second process gas to the substrate once each cycle. A cycle time of the cycle is set equal to or shorter than 0.5 seconds.

    摘要翻译： 提供了一种沉积薄膜的方法。 在该方法中，依次提供彼此反应的第一处理气体和第二处理气体，以使第一处理气体和第二处理气体的反应产物的原子层或分子层沉积在基板上 一个室，通过重复一个循环，每循环一次地向基板依次提供第一处理气体和第二处理气体。 循环的循环时间设定为等于或小于0.5秒。

    FILM DEPOSITION APPARATUS
    8.
    发明申请
    FILM DEPOSITION APPARATUS 审中-公开
    胶片沉积装置

    公开(公告)号：US20140209028A1

    公开(公告)日：2014-07-31

    申请号：US14163135

    申请日：2014-01-24

    申请人： TOKYO ELECTRON LIMITED

    发明人： Kentaro OSHIMO ,  Masato KOAKUTSU ,  Hiroko SASAKI ,  Kaoru SATO ,  Hiroaki IKEGAWA

    IPC分类号： H01L21/67

    CPC分类号： H01L21/68771 ,  C23C16/34 ,  C23C16/4401 ,  C23C16/45551 ,  H01L21/68764

    摘要： A film deposition apparatus includes a turntable; a first process gas supply portion; a gas nozzle that supplies a second process gas; a nozzle cover that is provided to cover the gas nozzle; a separation gas supply portion, wherein the nozzle cover includes an upper plate portion, and an upstream sidewall portion and a downstream sidewall portion that extend downward from upstream and downstream edge portions of the upper plate portion in a rotational direction of the turntable, respectively, wherein an inner surface of the upstream sidewall portion is formed as an inclined surface that is inclined with respect to a surface of the turntable, and wherein an angle θ1 between the inner surface of the upstream sidewall portion and the surface of the turntable is smaller than an angle θ2 between an inner surface of the downstream sidewall portion and the surface of the turntable.

    摘要翻译： 一种成膜装置，包括转盘; 第一处理气体供给部; 提供第二处理气体的气体喷嘴; 喷嘴盖，其设置成覆盖所述气体喷嘴; 分离气体供给部分，其中喷嘴盖包括上板部分，以及分别在转台的旋转方向上从上板部分的上游和下游边缘部分向下延伸的上游侧壁部分和下游侧壁部分， 其特征在于，所述上游侧壁部的内表面形成为相对于所述转盘的表面倾斜的倾斜面，并且所述上游侧壁部的内表面与所述转台的表面之间的角度＆ 小于角度和角度; 2在下游侧壁部分的内表面和转台的表面之间。

    FILM DEPOSITION METHOD
    9.
    发明申请
    FILM DEPOSITION METHOD 审中-公开
    膜沉积法

    公开(公告)号：US20130164936A1

    公开(公告)日：2013-06-27

    申请号：US13726728

    申请日：2012-12-26

    申请人： Tokyo Electron Limited

    发明人： Kentaro OSHIMO ,  Masato Koakutsu

    IPC分类号： H01L49/02

    CPC分类号： H01L28/60 ,  C23C16/34 ,  C23C16/45527 ,  C23C16/45551 ,  C23C16/56 ,  H01L21/28562 ,  H01L21/68764 ,  H01L21/68771

    摘要： A film deposition method includes a film depositing step of depositing titanium nitride on a substrate mounted on a substrate mounting portion of a turntable, which is rotatably provided in a vacuum chamber, by alternately exposing the substrate to a titanium containing gas and a nitrogen containing gas which is capable of reacting with the titanium containing gas while rotating the turntable; and an exposing step of exposing the substrate on which the titanium nitride is deposited to the nitrogen containing gas, the film depositing step and the exposing step being continuously repeated to deposit the titanium nitride of a desired thickness.

    摘要翻译： 薄膜沉积方法包括：通过将基板交替地暴露于含钛气体和含氮气体的方法，将氮化钛沉积在安装在转台的基板安装部分上的基板上，该薄膜沉积步骤可旋转地设置在真空室中 其能够在旋转所述转台的同时与所述含钛气体反应; 以及将其上沉积氮化钛的基板暴露于含氮气体的曝光步骤，连续重复膜沉积步骤和曝光步骤以沉积所需厚度的氮化钛。

    SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE REMOVAL METHOD
    10.
    发明公开
    SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE REMOVAL METHOD 审中-公开

    公开(公告)号：US20230193464A1

    公开(公告)日：2023-06-22

    申请号：US18067201

    申请日：2022-12-16

    申请人： Tokyo Electron Limited

    发明人： Akihiro KURIBAYASHI ,  Kentaro OSHIMO ,  Hyunyoung GO ,  Yudo SUGAWARA ,  Akashi FUJIO

    IPC分类号： C23C16/458 ,  H01L21/687

    CPC分类号： C23C16/4586 ,  H01L21/68742 ,  C23C16/4584

    摘要： A substrate-processing-apparatus includes a processing-vessel to accommodate a substrate and to process the substrate; a substrate-support that is provided inside the processing-vessel and has a mounting-surface on which the substrate is mounted; and a lift-pin-mechanism that includes a lift-pin that is movable relative to the substrate-support and a pin-housing-chamber in which the lift-pin is housed, the lift-pin-mechanism being to lift the substrate by raising the lift-pin, wherein the substrate-support has a hole through which the lift-pin is passable, the lift-pin mechanism includes a pressure-regulator that regulates the pressure in the hole by passing inert-gas through the pin-housing-chamber, and at a timing when the substrate is to be lifted, the pressure-regulator adjusts the pressure in the hole to a lifting pressure that is greater than or equal to the pressure in a processing space that is above the mounting-surface and at which the substrate remains continuously mounted on the mounting-surface.