Plasma Processing Apparatus
    1.
    发明申请

    公开(公告)号:US20190180989A1

    公开(公告)日:2019-06-13

    申请号:US16214466

    申请日:2018-12-10

    Abstract: A plasma processing apparatus for performing a plasma process on a workpiece inside a processing container by radiating microwaves from an antenna into the processing container through a top plate of the processing container to generate plasma, which includes: a pressing member having grooves formed in a surface facing the top plate, and configured to press the antenna against the top plate; and elastic members respectively disposed in the grooves and deformed while being sandwiched between the pressing member and the antenna, and configured to apply a pressing force to the antenna toward the processing container. The grooves and the elastic members are respectively provided in concentric annular regions each having a center coinciding with a predetermined axis perpendicular to the top plate, and the elastic members are disposed only in a portion of the annular regions.

    PLASMA PROCESSING APPARATUS, PLASMA PROCESSING METHOD, AND DIELECTRIC WINDOW

    公开(公告)号:US20230326716A1

    公开(公告)日:2023-10-12

    申请号:US18042513

    申请日:2021-08-16

    Abstract: A plasma processing apparatus includes a chamber having a processing space for performing plasma processing on a substrate and a synthesis space for synthesizing electromagnetic waves, a dielectric window configured to partition the processing space and the synthesis space, an antenna unit having a plurality of antennas that radiate the electromagnetic waves into the synthesis space and functioning as a phased array antenna, an electromagnetic wave output part configured to output the electromagnetic waves to the antenna unit, and a controller configured to cause the antenna unit to function as the phased array antenna. The dielectric window has a plurality of recesses on a surface thereof facing the processing space.

    PLASMA PROCESSING APPARATUS AND FILM FORMATION METHOD
    3.
    发明申请
    PLASMA PROCESSING APPARATUS AND FILM FORMATION METHOD 有权
    等离子体处理装置和膜形成方法

    公开(公告)号:US20170009338A1

    公开(公告)日:2017-01-12

    申请号:US15117804

    申请日:2015-02-23

    Abstract: A plasma processing apparatus for alternately performing a first plasma processing step using first and second processing gases and a second plasma processing step using third and fourth processing gases. The apparatus includes: a processing container that has a dielectric window in a ceiling and removably accommodates a workpiece; an exhaust unit that evacuates the processing container; a processing gas supply unit that supplies the first, second, third, and fourth processing gases into the processing container; a first gas introduction unit including a top plate gas injection port, a dielectric window gas flow path, and a first external gas flow path; a second gas introduction unit including a sidewall gas injection port, a sidewall gas flow path, and a second external gas flow path; an electromagnetic wave supply unit that supplies electromagnetic waves into the plasma generating space; a bypass exhaust path; and an opening/closing valve.

    Abstract translation: 一种用于交替地执行使用第一和第二处理气体的第一等离子体处理步骤的等离子体处理装置和使用第三和第四处理气体的第二等离子体处理步骤 该装置包括:处理容器,其在天花板中具有介电窗口并可移除地容纳工件; 排气单元,其排出处理容器; 处理气体供应单元,其将第一,第二,第三和第四处理气体供应到处理容器中; 第一气体导入单元,包括顶板气体注入口,电介质窗口气体流路和第一外部气体流路; 第二气体引入单元,包括侧壁气体注入口,侧壁气体流路和第二外部气体流路; 向所述等离子体产生空间供给电磁波的电磁波供给部; 旁路排气通道; 和开闭阀。

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