公开(公告)号：US20240170267A1

公开(公告)日：2024-05-23

申请号：US18552292

申请日：2022-03-14

Applicant: Tokyo Electron Limited

Inventor： Yoshiki NAKANO ,  Takafumi NOGAMI ,  Kenichi KOTE

IPC: H01J37/32 ,  C23C16/44

CPC classification number: H01J37/32862 ,  C23C16/4405 ,  H01J37/32192

Abstract: In a specification step, the pressure within a processing container at the time of plasma cleaning is specified from the amount of damage to a protective film that is provided on an inner surface of the processing container and the cleaning rate at which accumulated matter that accumulates in the processing container is removed, said amount of damage and said cleaning rate being treated as plasma cleaning parameters. In a cleaning step, the pressure within the processing container is adjusted to the pressure that was specified in the specification step, while a cleaning gas is supplied into the processing container, and microwaves are used to generate plasma within the processing container and plasma cleaning is performed within the processing container.

公开(公告)号：US20230317421A1

公开(公告)日：2023-10-05

申请号：US18125322

申请日：2023-03-23

Applicant: Tokyo Electron Limited

Inventor： Takafumi NOGAMI ,  Kenichi KOTE

IPC: H01J37/32 ,  C23C16/458 ,  C23C16/511 ,  C23C16/455 ,  C23C16/34

CPC classification number: H01J37/32449 ,  H01J37/32238 ,  C23C16/4583 ,  C23C16/511 ,  C23C16/45565 ,  C23C16/345 ,  H01J2237/332

Abstract: A plasma processing apparatus includes: a stage on which a substrate is placed; a chamber in which the stage is provided; a plasma source configured to introduce a microwave into the chamber from a ceiling wall of the chamber so as to generate surface wave plasma inside the chamber; and at least one gas discharger configured to discharge a gas toward the stage. The at least one gas discharger is configured to adjust a gas discharge position in a predetermined plane and a distance from a center of the stage to the gas discharge position by changing a gas supply path existing inside the at least one gas discharger.

公开(公告)号：US20210249240A1

公开(公告)日：2021-08-12

申请号：US16972784

申请日：2019-05-30

Applicant: TOKYO ELECTRON LIMITED

Inventor： Satoshi ITOH ,  Takafumi NOGAMI ,  Eita YOKOKURA ,  Reisa MATSUMOTO

IPC: H01J37/32 ,  B08B7/00 ,  C23C16/44 ,  C23C16/511

Abstract: Provided is a method for cleaning a microwave plasma processing apparatus which has a processing container and a microwave radiation part, and which has a window part provided at a position where the microwave radiation part is disposed in the processing container. The method includes a cleaning step of adjusting a pressure to a pressure corresponding to a size of a cleaning target part, among parts within the processing container including a wall surface of the processing container, the microwave radiation part, and the window part, while supplying a cleaning gas, and performing a cleaning process using plasma of the cleaning gas.

公开(公告)号：US20190180989A1

公开(公告)日：2019-06-13

申请号：US16214466

申请日：2018-12-10

Applicant: TOKYO ELECTRON LIMITED

Inventor： Takafumi NOGAMI ,  Hiroshi KANEKO

IPC: H01J37/32 ,  C23C16/511

Abstract: A plasma processing apparatus for performing a plasma process on a workpiece inside a processing container by radiating microwaves from an antenna into the processing container through a top plate of the processing container to generate plasma, which includes: a pressing member having grooves formed in a surface facing the top plate, and configured to press the antenna against the top plate; and elastic members respectively disposed in the grooves and deformed while being sandwiched between the pressing member and the antenna, and configured to apply a pressing force to the antenna toward the processing container. The grooves and the elastic members are respectively provided in concentric annular regions each having a center coinciding with a predetermined axis perpendicular to the top plate, and the elastic members are disposed only in a portion of the annular regions.

公开(公告)号：US20250069854A1

公开(公告)日：2025-02-27

申请号：US18947903

申请日：2024-11-14

Applicant: Tokyo Electron Limited

Inventor： Takafumi NOGAMI ,  Kenichi KOTE

IPC: H01J37/32

Abstract: A method of modifying a film formed on a substrate, includes: generating plasma by a microwave in an interior of a processing container in which a stage on which a substrate is placed is provided; and periodically applying a DC voltage to the stage in the interior of the processing container in which the plasma is generated by the generating the plasma, and irradiating the substrate with electrons in the plasma.

公开(公告)号：US20240240307A1

公开(公告)日：2024-07-18

申请号：US18410046

申请日：2024-01-11

Applicant: Tokyo Electron Limited

Inventor： Takafumi NOGAMI ,  Yoshiki NAKANO

IPC: C23C16/34 ,  C23C16/455 ,  C23C16/505

CPC classification number: C23C16/345 ,  C23C16/45574 ,  C23C16/505

Abstract: A method of forming a silicon nitride film includes: preparing a substrate in a processing container, the substrate having a graphene film on a surface of the substrate; supplying a nitrogen-containing gas into the processing container; supplying a Si precursor gas into the processing container after the nitrogen-containing gas is supplied and after a pressure control inside the processing container is stabilized; generating plasma within the processing container by supplying radio-frequency power for plasma generation after the Si precursor gas is supplied and before the pressure control inside the processing container is stabilized; and forming the silicon nitride film on the graphene film by exposing the substrate to the plasma.

公开(公告)号：US20240047194A1

公开(公告)日：2024-02-08

申请号：US18264539

申请日：2022-01-25

Applicant: Tokyo Electron Limited

Inventor： Kenichi KOTE ,  Takafumi NOGAMI ,  Kazui KOBAYASHI

IPC: H01L21/02 ,  H01J37/32 ,  C23C16/46 ,  C23C16/511 ,  C23C16/34 ,  C23C16/40 ,  C23C16/455

CPC classification number: H01L21/02274 ,  H01L21/0217 ,  H01L21/02164 ,  H01J37/32724 ,  H01J37/32816 ,  H01J37/32449 ,  C23C16/46 ,  C23C16/511 ,  C23C16/345 ,  C23C16/402 ,  C23C16/45557 ,  H01J2237/332 ,  H01J37/32192 ,  H01J2237/182

Abstract: The present disclosure provides a substrate processing method including: a preparation process of placing a target substrate on a stage within a processing container; a first heating process of supplying a first gas into the processing container and heating the target substrate with a heater; a second heating process of stopping the supply of the first gas, supplying a second gas different from the first gas, and heating the target substrate with the heater; and a processing process of processing the target substrate by supplying the second gas and a third gas.

公开(公告)号：US20250154649A1

公开(公告)日：2025-05-15

申请号：US19024424

申请日：2025-01-16

Applicant: Tokyo Electron Limited

Inventor： Kenichi KOTE ,  Takafumi NOGAMI

IPC: C23C16/34 ,  C23C16/511 ,  H01J37/32 ,  H01L21/02

Abstract: There is provided an SiN film formation method that includes: a) loading a substrate into a processing chamber; b) supplying a nitrogen-containing gas to the processing chamber; c) after b), applying electromagnetic power to generate plasma of the nitrogen-containing gas in the processing chamber; and d) after c), supplying a silicon-containing raw material gas to the processing chamber, and allowing the silicon-containing raw material gas to react with the plasma of the nitrogen-containing gas, thereby forming an SiN film on the substrate.

公开(公告)号：US20230135618A1

公开(公告)日：2023-05-04

申请号：US17912201

申请日：2021-03-12

Applicant: Tokyo Electron Limited

Inventor： Hiroshi HIROSE ,  Masaomi KOBE ,  Koichi MIYASHITA ,  Takafumi NOGAMI ,  Kenichi KOTE ,  Kouji IIHOSHI

IPC: C23C16/52 ,  C23C16/44 ,  C23C16/511 ,  H01J37/32

Abstract: A substrate processing method includes: a step of preparing a substrate in a chamber of a substrate processing apparatus; a step of correcting a set power value based on a correction value Y from Equation (1), coefficients A, B, C, and D, and a variable X indicating a processed amount of the substrates having been subjected to continuous film formation processes, referring to a storage in which the coefficients A, B, C, and D of the Equation (1) used to calculate the correction value Y for the set power value are stored; and a step of processing the prepared substrate by applying power with the corrected power value into the chamber, the Equation (1) is expressed as Y=Aexp(BX)+CX+D, where at least one of the coefficients A, C, and D is not zero, and when the coefficient A is not zero, the coefficient B is also not zero.

公开(公告)号：US20170372877A1

公开(公告)日：2017-12-28

申请号：US15630365

申请日：2017-06-22

Applicant: TOKYO ELECTRON LIMITED

Inventor： Takafumi NOGAMI ,  Makoto IGARASHI

IPC: H01J37/32 ,  H01L21/67 ,  H01L21/687

CPC classification number: H01J37/32935 ,  H01J37/32201 ,  H01J37/32266 ,  H01J37/32715 ,  H01J37/32926 ,  H01J2237/332 ,  H01L21/67253 ,  H01L21/68714

Abstract: A support apparatus for plasma adjustment includes a storage part storing index value estimation data including data defining an amount of change in an index value between adjustment positions for each of the adjustment parts, the index value corresponding to electron density of plasma, an input part for inputting a measurement result of the index value obtained when plasma is generated and the adjustment positions of the adjustment parts, and a data processing part configured to estimate the index value for each of adjustment positions of the adjustment parts based on input items input to the input part and the estimation data and configured to select proper combinations of the adjustment positions of the adjustment parts based on combinations of the adjustment positions of the adjustment parts and estimated values of a plurality of index values in the circumferential direction corresponding to the respective combinations.