公开(公告)号：US20240321602A1

公开(公告)日：2024-09-26

申请号：US18733073

申请日：2024-06-04

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yuji ASAKAWA ,  Atsushi TANAKA ,  Hiroyuki OGAWA

IPC: H01L21/67

CPC classification number: H01L21/67063

Abstract: A cylindrical inner wall used in a substrate processing apparatus and surrounding a stage on which a substrate is placed, with a gap between the inner wall and an outer periphery of the stage. The inner wall includes a plurality of slits formed in a lower end of the inner wall, and a plurality of grooves formed in the inner surface of the inner wall to extend from an upper end to the lower end of the inner wall so as to communicate with the slits.

公开(公告)号：US20180151380A1

公开(公告)日：2018-05-31

申请号：US15822658

申请日：2017-11-27

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hiroyuki OGAWA ,  Akitaka SHIMIZU ,  Shigeki DOBA

IPC: H01L21/3065

CPC classification number: H01L21/3065 ,  H01J37/321 ,  H01J37/32357 ,  H01J37/32422 ,  H01J2237/3174 ,  H01J2237/334 ,  H01L21/31116 ,  H01L21/67103 ,  H01L21/6719

Abstract: There is provided a substrate processing apparatus which includes: a process container configured to accommodate a substrate; a partition member disposed between plasma generated inside the process container and the substrate, the partition member configured to selectively transmit radicals in the plasma toward the substrate; and a heat shield plate disposed between the partition member and the substrate. The heat shield plate is disposed so as to face the substrate. The heat shield plate is made of metal or silicon and is connected to the process container.

公开(公告)号：US20200321195A1

公开(公告)日：2020-10-08

申请号：US16905003

申请日：2020-06-18

Applicant: Tokyo Electron Limited

Inventor： Shigeki DOBA ,  Hiroyuki OGAWA ,  Hajime NAITO ,  Akitaka SHIMIZU ,  Tatsuo MATSUDO

IPC: H01J37/32 ,  H01L21/67

Abstract: A substrate processing apparatus, for generating a plasma from a gas by a high frequency energy and etching a substrate in a processing chamber by radicals in the plasma, includes a high frequency power supply configured to supply the high frequency energy into the processing chamber, a gas supply source configured to introduce the gas into the processing chamber, a mounting table configured to mount the substrate thereon, and a partition plate provided in the processing chamber and configured to divide an inner space of the processing chamber into a plasma generation space and a substrate processing space and suppress passage of ions therethrough. The partition plate and a portion of an inner wall surface of the processing chamber which is positioned at least above the mounting table are covered by a dielectric material having a recombination coefficient of 0.002 or less.

公开(公告)号：US20180286696A1

公开(公告)日：2018-10-04

申请号：US15940528

申请日：2018-03-29

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hiroyuki OGAWA ,  Tomoya OKUBO ,  Akitaka SHIMIZU

IPC: H01L21/311 ,  H01J37/32

CPC classification number: H01L21/31116 ,  H01J37/3244 ,  H01J37/32458 ,  H01J2237/334 ,  H01L21/67017

Abstract: In a substrate processing apparatus for processing a substrate mounted on a mounting table in a processing chamber by supplying a gas to the substrate, the apparatus includes: a partition unit provided, between a processing space where a substrate is provided and a diffusion space where a first gas is diffused, to face the mounting table; a first gas supply unit for supplying the first gas to the diffusion space; first gas injection holes, formed through the partition unit, for injecting the first gas diffused in the diffusion space into the processing space; and a second gas supply unit including second gas injection holes opened on a gas injection surface of the partition unit which faces the processing space. The second gas supply unit independently supplies a second gas to each of a plurality of regions arranged in a horizontal direction in the processing space separately from the first gas.

公开(公告)号：US20170256382A1

公开(公告)日：2017-09-07

申请号：US15449675

申请日：2017-03-03

Applicant: TOKYO ELECTRON LIMITED

Inventor： Shigeki DOBA ,  Hiroyuki OGAWA ,  Hajime NAITO ,  Akitaka SHIMIZU ,  Tatsuo MATSUDO

IPC: H01J37/32 ,  H01L21/67

Abstract: A substrate processing apparatus, for generating a plasma from a gas by a high frequency energy and etching a substrate in a processing chamber by radicals in the plasma, includes a high frequency power supply configured to supply the high frequency energy into the processing chamber, a gas supply source configured to introduce the gas into the processing chamber, a mounting table configured to mount the substrate thereon, and a partition plate provided in the processing chamber and configured to divide an inner space of the processing chamber into a plasma generation space and a substrate processing space and suppress passage of ions therethrough. The partition plate and a portion of an inner wall surface of the processing chamber which is positioned at least above the mounting table are covered by a dielectric material having a recombination coefficient of 0.002 or less.