公开(公告)号：US20220108913A1

公开(公告)日：2022-04-07

申请号：US17450209

申请日：2021-10-07

Applicant: Tokyo Electron Limited

Inventor： Hajime NAITO ,  Hidenori MIYOSHI ,  Shigeki DOBA

IPC: H01L21/687 ,  H01L21/677 ,  H01J37/32

Abstract: There is provided a method of processing a substrate using a substrate processing apparatus including: a processing container configured to process the substrate therein; a plasma generation space formed inside the processing container; a processing space in communication with the plasma generation space via a partition plate; a stage provided inside the processing space and configured to place the substrate on a top surface of the stage; and a lifting mechanism configured to raise and lower the substrate on the stage, the method including, during a plasma processing on the substrate in the processing space, raising and lowering the substrate using the lifting mechanism to cause a potential change in the substrate during the plasma processing.

公开(公告)号：US20180151380A1

公开(公告)日：2018-05-31

申请号：US15822658

申请日：2017-11-27

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hiroyuki OGAWA ,  Akitaka SHIMIZU ,  Shigeki DOBA

IPC: H01L21/3065

CPC classification number: H01L21/3065 ,  H01J37/321 ,  H01J37/32357 ,  H01J37/32422 ,  H01J2237/3174 ,  H01J2237/334 ,  H01L21/31116 ,  H01L21/67103 ,  H01L21/6719

Abstract: There is provided a substrate processing apparatus which includes: a process container configured to accommodate a substrate; a partition member disposed between plasma generated inside the process container and the substrate, the partition member configured to selectively transmit radicals in the plasma toward the substrate; and a heat shield plate disposed between the partition member and the substrate. The heat shield plate is disposed so as to face the substrate. The heat shield plate is made of metal or silicon and is connected to the process container.

公开(公告)号：US20170256382A1

公开(公告)日：2017-09-07

申请号：US15449675

申请日：2017-03-03

Applicant: TOKYO ELECTRON LIMITED

Inventor： Shigeki DOBA ,  Hiroyuki OGAWA ,  Hajime NAITO ,  Akitaka SHIMIZU ,  Tatsuo MATSUDO

IPC: H01J37/32 ,  H01L21/67

Abstract: A substrate processing apparatus, for generating a plasma from a gas by a high frequency energy and etching a substrate in a processing chamber by radicals in the plasma, includes a high frequency power supply configured to supply the high frequency energy into the processing chamber, a gas supply source configured to introduce the gas into the processing chamber, a mounting table configured to mount the substrate thereon, and a partition plate provided in the processing chamber and configured to divide an inner space of the processing chamber into a plasma generation space and a substrate processing space and suppress passage of ions therethrough. The partition plate and a portion of an inner wall surface of the processing chamber which is positioned at least above the mounting table are covered by a dielectric material having a recombination coefficient of 0.002 or less.

公开(公告)号：US20200321195A1

公开(公告)日：2020-10-08

申请号：US16905003

申请日：2020-06-18

Applicant: Tokyo Electron Limited

Inventor： Shigeki DOBA ,  Hiroyuki OGAWA ,  Hajime NAITO ,  Akitaka SHIMIZU ,  Tatsuo MATSUDO

IPC: H01J37/32 ,  H01L21/67

Abstract: A substrate processing apparatus, for generating a plasma from a gas by a high frequency energy and etching a substrate in a processing chamber by radicals in the plasma, includes a high frequency power supply configured to supply the high frequency energy into the processing chamber, a gas supply source configured to introduce the gas into the processing chamber, a mounting table configured to mount the substrate thereon, and a partition plate provided in the processing chamber and configured to divide an inner space of the processing chamber into a plasma generation space and a substrate processing space and suppress passage of ions therethrough. The partition plate and a portion of an inner wall surface of the processing chamber which is positioned at least above the mounting table are covered by a dielectric material having a recombination coefficient of 0.002 or less.

公开(公告)号：US20170133234A1

公开(公告)日：2017-05-11

申请号：US15404471

申请日：2017-01-12

Applicant: Tokyo Electron Limited

Inventor： Shigeki DOBA ,  Satoshi YAMADA

IPC: H01L21/3065 ,  H01J37/32 ,  H01L21/768 ,  H01L21/311 ,  H01L21/687

CPC classification number: H01L21/3065 ,  H01J37/32082 ,  H01J37/32091 ,  H01J37/32165 ,  H01J37/32651 ,  H01J37/32715 ,  H01J2237/334 ,  H01L21/31138 ,  H01L21/68735 ,  H01L21/76898

Abstract: A plasma etching apparatus performs plasma etching on a substrate having a resist pattern formed thereon and an outer edge portion where the substrate surface is exposed. The plasma etching apparatus includes a support part that supports the substrate, a cover member that covers the outer edge portion of the substrate and prevents plasma from coming around the outer edge portion, and a control unit that generates plasma by controlling high frequency power application and supply of a processing gas for etching, and uses the generated plasma to etch the substrate that is supported by the support part and has the outer edge portion covered by the cover member. After etching the substrate, the control unit generates plasma by controlling high frequency power application and supply of a processing gas for ashing, and uses the generated plasma to perform ashing on the resist pattern on the etched substrate.