公开(公告)号：US11424141B2

公开(公告)日：2022-08-23

申请号：US16165118

申请日：2018-10-19

Applicant: Tokyo Electron Limited

Inventor： Jian Zhang ,  Takao Inada ,  Hisashi Kawano ,  Seigo Fujitsu ,  Hideaki Sato ,  Teruaki Konishi ,  Toshiyuki Shiokawa ,  Koji Ogura ,  Hiroshi Yoshida

IPC: H01L21/67 ,  H01L21/306 ,  H01L21/311

Abstract: A substrate processing apparatus, a substrate processing method and a recording medium capable of shortening an etching processing time are provided. The substrate processing apparatus includes a substrate processing tub, a mixing unit and a supply line. The substrate processing tub is configured to perform an etching processing therein with an etching liquid. The mixing unit is configured to mix a new liquid with a silicon-containing compound or a liquid containing the silicon-containing compound. The supply line is configured to supply a mixed solution mixed by the mixing unit into the substrate processing tub.

公开(公告)号：US11244838B2

公开(公告)日：2022-02-08

申请号：US15698806

申请日：2017-09-08

Applicant: Tokyo Electron Limited

Inventor： Tatsuhiro Ueki ,  Jian Zhang

IPC: H01L21/67 ,  B05B12/08 ,  B05C11/10 ,  G01B11/02 ,  G01N21/95 ,  B05B12/12 ,  B05D1/00 ,  G03F7/16 ,  H01L21/66 ,  B24B49/04 ,  G01B11/06

Abstract: A substrate processing apparatus 1 is configured to supply a processing liquid to a peripheral portion of a wafer W being rotated. The substrate processing apparatus 1 includes a rotating/holding unit 21 configured to rotate and hold the wafer W; a processing liquid discharging unit 73 configured to discharge the processing liquid toward the peripheral portion of the wafer W held by the rotating/holding unit 21; a variation width acquiring unit configured to acquire information upon a variation width of a deformation amount of the peripheral portion of the wafer W; and a discharge controller 7 configured to control a discharge angle and a discharge position of the processing liquid from the processing liquid discharging unit 73 onto the peripheral portion based on the information upon the variation width of the deformation amount of the peripheral portion acquired by the variation width acquiring unit.

公开(公告)号：US11640911B2

公开(公告)日：2023-05-02

申请号：US17646345

申请日：2021-12-29

Applicant: Tokyo Electron Limited

Inventor： Tatsuhiro Ueki ,  Jian Zhang

IPC: H01L21/67 ,  G01N21/95 ,  B05B12/08 ,  B05C11/10 ,  G03F7/16 ,  G01B11/02 ,  H01L21/66 ,  B05B12/12 ,  B05D1/00 ,  B24B49/04 ,  G01B11/06

Abstract: A substrate processing apparatus 1 is configured to supply a processing liquid to a peripheral portion of a wafer W being rotated. The substrate processing apparatus 1 includes a rotating/holding unit 21 configured to rotate and hold the wafer W; a processing liquid discharging unit 73 configured to discharge the processing liquid toward the peripheral portion of the wafer W held by the rotating/holding unit 21; a variation acquiring unit configured to acquire information upon a variation amount of a deformation of the peripheral portion of the wafer W; and a discharge controller 7 configured to control a discharge angle and a discharge position of the processing liquid from the processing liquid discharging unit 73 onto the peripheral portion based on the information upon the variation amount of the deformation of the peripheral portion acquired by the variation acquiring unit.

公开(公告)号：US20180076057A1

公开(公告)日：2018-03-15

申请号：US15698806

申请日：2017-09-08

Applicant: Tokyo Electron Limited

Inventor： Tatsuhiro Ueki ,  Jian Zhang

IPC: H01L21/67

CPC classification number: H01L21/6708 ,  H01L21/67051 ,  H01L21/67253 ,  H01L21/67288

Abstract: A substrate processing apparatus 1 is configured to supply a processing liquid to a peripheral portion of a wafer W being rotated. The substrate processing apparatus 1 includes a rotating/holding unit 21 configured to rotate and hold the wafer W; a processing liquid discharging unit 73 configured to discharge the processing liquid toward the peripheral portion of the wafer W held by the rotating/holding unit 21; a variation width acquiring unit configured to acquire information upon a variation width of a deformation amount of the peripheral portion of the wafer W; and a discharge controller 7 configured to control a discharge angle and a discharge position of the processing liquid from the processing liquid discharging unit 73 onto the peripheral portion based on the information upon the variation width of the deformation amount of the peripheral portion acquired by the variation width acquiring unit.

公开(公告)号：US09895711B2

公开(公告)日：2018-02-20

申请号：US15005516

申请日：2016-01-25

Applicant: Tokyo Electron Limited

Inventor： Jian Zhang ,  Yoshifumi Amano ,  Eiichiro Okamoto ,  Yuki Ito

IPC: H01L21/67 ,  H01L21/687 ,  H01L21/02 ,  B05C11/00

CPC classification number: B05C11/00 ,  B08B2203/0229 ,  H01L21/6715 ,  H01L21/68792

Abstract: A substrate liquid processing apparatus including: a substrate rotary-holding unit configured to rotate a substrate while holding the substrate; and a processing liquid supply unit configured to supply a processing liquid to a bottom surface of the substrate held by the substrate rotary-holding unit. The substrate rotary-holding unit includes: a base plate disposed spaced apart from the substrate below the substrate; a cover member supported by the base plate and disposed outside an outer periphery of the substrate; and a discharge port formed between the base plate and the cover member and configured to discharge an air stream occurring below the substrate. The support portion of the base plate and the cover member protrudes outwards from a top surface of the base plate to be connected to the cover member.

公开(公告)号：US20220122853A1

公开(公告)日：2022-04-21

申请号：US17646345

申请日：2021-12-29

Applicant: Tokyo Electron Limited

Inventor： Tatsuhiro Ueki ,  Jian Zhang

IPC: H01L21/67 ,  B05B12/08 ,  B05C11/10 ,  G03F7/16 ,  G01B11/02 ,  G01N21/95 ,  H01L21/66 ,  B05B12/12 ,  B05D1/00 ,  B24B49/04 ,  G01B11/06

Abstract: A substrate processing apparatus 1 is configured to supply a processing liquid to a peripheral portion of a wafer W being rotated. The substrate processing apparatus 1 includes a rotating/holding unit 21 configured to rotate and hold the wafer W; a processing liquid discharging unit 73 configured to discharge the processing liquid toward the peripheral portion of the wafer W held by the rotating/holding unit 21; a variation acquiring unit configured to acquire information upon a variation amount of a deformation of the peripheral portion of the wafer W; and a discharge controller 7 configured to control a discharge angle and a discharge position of the processing liquid from the processing liquid discharging unit 73 onto the peripheral portion based on the information upon the variation amount of the deformation of the peripheral portion acquired by the variation acquiring unit.

公开(公告)号：US20190122906A1

公开(公告)日：2019-04-25

申请号：US16165118

申请日：2018-10-19

Applicant: Tokyo Electron Limited

Inventor： Jian Zhang ,  Takao Inada ,  Hisashi Kawano ,  Seigo Fujitsu ,  Hideaki Sato ,  Teruaki Konishi ,  Toshiyuki Shiokawa ,  Koji Ogura ,  Hiroshi Yoshida

IPC: H01L21/67 ,  H01L21/306

Abstract: A substrate processing apparatus, a substrate processing method and a recording medium capable of shortening an etching processing time are provided. The substrate processing apparatus includes a substrate processing tub, a mixing unit and a supply line. The substrate processing tub is configured to perform an etching processing therein with an etching liquid. The mixing unit is configured to mix a new liquid with a silicon-containing compound or a liquid containing the silicon-containing compound. The supply line is configured to supply a mixed solution mixed by the mixing unit into the substrate processing tub.

公开(公告)号：US20160221046A1

公开(公告)日：2016-08-04

申请号：US15005516

申请日：2016-01-25

Applicant: Tokyo Electron Limited

Inventor： Jian Zhang ,  Yoshifumi Amano ,  Eiichiro Okamoto ,  Yuki Ito

IPC: B08B3/10 ,  B05C11/00 ,  H01L21/687 ,  B05C13/02 ,  H01L21/67 ,  H01L21/02

CPC classification number: B05C11/00 ,  B08B2203/0229 ,  H01L21/6715 ,  H01L21/68792

Abstract: A substrate liquid processing apparatus including: a substrate rotary-holding unit configured to rotate a substrate while holding the substrate; and a processing liquid supply unit configured to supply a processing liquid to a bottom surface of the substrate held by the substrate rotary-holding unit. The substrate rotary-holding unit includes: a base plate disposed spaced apart from the substrate below the substrate; a cover member supported by the base plate and disposed outside an outer periphery of the substrate; and a discharge port formed between the base plate and the cover member and configured to discharge an air stream occurring below the substrate. The support portion of the base plate and the cover member protrudes outwards from a top surface of the base plate to be connected to the cover member.

Abstract translation: 一种基板液体处理装置，包括：基板旋转保持单元，被配置为在保持基板的同时旋转基板; 以及处理液体供给单元，其构造成将处理液体供给到由所述基板旋转保持单元保持的所述基板的底面。 基板旋转保持单元包括：与基板下方的基板隔开设置的基板; 盖构件，其由所述基板支撑并且设置在所述基板的外周的外侧; 以及形成在所述基板和所述盖部件之间并且被配置为排出在所述基板下方发生的空气流的排出口。 基板的支撑部分和盖构件从基板的顶表面向外突出以与盖构件连接。