公开(公告)号：US20190122906A1

公开(公告)日：2019-04-25

申请号：US16165118

申请日：2018-10-19

Applicant: Tokyo Electron Limited

Inventor： Jian Zhang ,  Takao Inada ,  Hisashi Kawano ,  Seigo Fujitsu ,  Hideaki Sato ,  Teruaki Konishi ,  Toshiyuki Shiokawa ,  Koji Ogura ,  Hiroshi Yoshida

IPC: H01L21/67 ,  H01L21/306

Abstract: A substrate processing apparatus, a substrate processing method and a recording medium capable of shortening an etching processing time are provided. The substrate processing apparatus includes a substrate processing tub, a mixing unit and a supply line. The substrate processing tub is configured to perform an etching processing therein with an etching liquid. The mixing unit is configured to mix a new liquid with a silicon-containing compound or a liquid containing the silicon-containing compound. The supply line is configured to supply a mixed solution mixed by the mixing unit into the substrate processing tub.

公开(公告)号：US11594430B2

公开(公告)日：2023-02-28

申请号：US16124529

申请日：2018-09-07

Applicant: Tokyo Electron Limited

Inventor： Takafumi Tsuchiya ,  Yuki Ishii ,  Hiroyuki Masutomi ,  Seigo Fujitsu

IPC: H01L21/67

Abstract: A substrate liquid processing apparatus A1 includes a processing tub 41 accommodating a processing liquid 43 and a substrate 8; a gas nozzle 70 discharging a gas into a lower portion within the processing tub 41; a gas supply unit 90 supplying the gas; a gas supply line 93 connecting the gas nozzle 70 with the gas supply unit 90; a decompression unit 95 introducing the processing liquid 43 within the processing tub 41 into the gas supply line 93 by decompressing the gas supply line 93; and a control unit 7 performing a first control of controlling the gas supply unit 90 to stop supply of the gas and controlling the decompression unit 95 to introduce the processing liquid 43 into the gas supply line 93 in a part of an idle period during which the substrate 8 is not accommodated in the processing tub 41.

公开(公告)号：US11424141B2

公开(公告)日：2022-08-23

申请号：US16165118

申请日：2018-10-19

Applicant: Tokyo Electron Limited

Inventor： Jian Zhang ,  Takao Inada ,  Hisashi Kawano ,  Seigo Fujitsu ,  Hideaki Sato ,  Teruaki Konishi ,  Toshiyuki Shiokawa ,  Koji Ogura ,  Hiroshi Yoshida

IPC: H01L21/67 ,  H01L21/306 ,  H01L21/311

Abstract: A substrate processing apparatus, a substrate processing method and a recording medium capable of shortening an etching processing time are provided. The substrate processing apparatus includes a substrate processing tub, a mixing unit and a supply line. The substrate processing tub is configured to perform an etching processing therein with an etching liquid. The mixing unit is configured to mix a new liquid with a silicon-containing compound or a liquid containing the silicon-containing compound. The supply line is configured to supply a mixed solution mixed by the mixing unit into the substrate processing tub.

公开(公告)号：US20190080937A1

公开(公告)日：2019-03-14

申请号：US16124529

申请日：2018-09-07

Applicant: Tokyo Electron Limited

Inventor： Takafumi Tsuchiya ,  Yuki Ishii ,  Hiroyuki Masutomi ,  Seigo Fujitsu

IPC: H01L21/67

Abstract: A substrate liquid processing apparatus A1 includes a processing tub 41 accommodating a processing liquid 43 and a substrate 8; a gas nozzle 70 discharging a gas into a lower portion within the processing tub 41; a gas supply unit 90 supplying the gas; a gas supply line 93 connecting the gas nozzle 70 with the gas supply unit 90; a decompression unit 95 introducing the processing liquid 43 within the processing tub 41 into the gas supply line 93 by decompressing the gas supply line 93; and a control unit 7 performing a first control of controlling the gas supply unit 90 to stop supply of the gas and controlling the decompression unit 95 to introduce the processing liquid 43 into the gas supply line 93 in a part of an idle period during which the substrate 8 is not accommodated in the processing tub 41.