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17 条记录 (耗时 0.021 秒)

    Substrate processing apparatus and substrate processing method
    3.
    发明授权
    Substrate processing apparatus and substrate processing method 有权

    公开(公告)号：US11211281B2

    公开(公告)日：2021-12-28

    申请号：US16707051

    申请日：2019-12-09

    申请人： Tokyo Electron Limited

    发明人： Kenji Sekiguchi

    IPC分类号： H01L21/68 ,  H01L21/687 ,  H01L21/67 ,  H01L21/02 ,  H01L21/306

    摘要： A substrate processing apparatus includes a placing unit, a supply, an embankment and a moving mechanism. The placing unit is configured to place a substrate thereon. The supply is configured to supply a processing liquid onto the substrate placed on the placing unit. The embankment is disposed to surround the substrate placed on the placing unit to suppress an outflow of the processing liquid supplied onto the substrate from the substrate. The moving mechanism is configured to vary a height of the embankment.

    Substrate cleaning method, substrate cleaning system and memory medium
    4.
    发明授权
    Substrate cleaning method, substrate cleaning system and memory medium 有权

    公开(公告)号：US10734255B2

    公开(公告)日：2020-08-04

    申请号：US15599067

    申请日：2017-05-18

    申请人： TOKYO ELECTRON LIMITED

    发明人： Kenji Sekiguchi ,  Itaru Kanno ,  Meitoku Aibara ,  Kouzou Tachibana

    IPC分类号： H01L21/67 ,  H01L21/02 ,  B08B7/00 ,  B08B3/04

    摘要： A substrate cleaning method includes supplying, onto a substrate, a film-forming processing liquid including a volatile component and a polar organic material that forms a processing film on the substrate, volatilizing the volatile component such that the film-forming processing liquid solidifies or cures and forms the processing film on the substrate, supplying, to the processing film formed on the substrate, a peeling processing liquid that peels off the processing film from the substrate and includes a non-polar solvent, and supplying, to the processing film, a dissolution processing liquid that dissolves the processing film and includes a polar solvent after the supplying of the peeling processing liquid. The non-polar solvent does not contain water, and the polar solvent does not contain water.

    Substrate processing method and substrate processing apparatus
    6.
    发明授权
    Substrate processing method and substrate processing apparatus 有权

    公开(公告)号：US11538679B2

    公开(公告)日：2022-12-27

    申请号：US16334430

    申请日：2017-09-08

    申请人： Tokyo Electron Limited

    发明人： Yuji Katagiri ,  Kenji Sekiguchi

    IPC分类号： H01L21/02 ,  H01L21/67

    摘要： A substrate processing method according to an embodiment includes a processing liquid supply step and an UV irradiation step. In the processing liquid supply step, a processing liquid is supplied to a substrate. In the UV irradiation step, the substrate after the processing liquid supply step is irradiated with ultraviolet rays having a wavelength of 200 nm or less, so that the substrate after the processing liquid supply step is destaticized.

    SUBSTRATE PROCESSING DEVICE AND ETCHING LIQUID
    7.
    发明申请
    SUBSTRATE PROCESSING DEVICE AND ETCHING LIQUID 有权

    公开(公告)号：US20220213382A1

    公开(公告)日：2022-07-07

    申请号：US17654640

    申请日：2022-03-14

    申请人： Tokyo Electron Limited

    发明人： Koukichi Hiroshiro ,  Tetsuya Sakazaki ,  Koji Kagawa ,  Kenji Sekiguchi ,  Kazuyoshi Mizumoto

    IPC分类号： C09K13/08 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/67 ,  H01L21/687

    摘要： A substrate processing method includes holding a substrate; and supplying an etching liquid to the substrate held in the holding of the substrate. The etching liquid contains an etching agent configured to etch a metal-based first material and a silicon-based second material exposed on the substrate and a protection agent configured to react with the second material between the first material and the second material to form a protection layer on a surface of the second material. Here, the etching agent is a liquid which contains fluorine atoms and an organic solvent and substantially does not contain water, and the protection layer protects the second material from etching with the etching agent.

    Substrate processing method and substrate processing apparatus
    9.
    发明授权
    Substrate processing method and substrate processing apparatus 有权
    基板处理方法和基板处理装置

    公开(公告)号：US08794250B2

    公开(公告)日：2014-08-05

    申请号：US13693712

    申请日：2012-12-04

    申请人： Tokyo Electron Limited

    发明人： Takehiko Orii ,  Kenji Sekiguchi ,  Noritaka Uchida ,  Satoru Tanaka ,  Hiroki Ohno

    IPC分类号： H01L21/306 ,  C23F1/00 ,  G11B31/00

    CPC分类号： F26B5/005 ,  H01L21/02052 ,  H01L21/67034 ,  H01L21/67051 ,  H01L21/6708

    摘要： A substrate processing apparatus according to the present invention is provided with a spin chuck (3) that holds a substrate (W) and rotates the same. A process liquid supply system (11, . . . ) is disposed to supply a process liquid to the substrate rotated by the spin chuck. There are disposed a fluid nozzle (12) that supplies to the substrate a drying fluid having a higher volatility than that of the process liquid, and an inert gas nozzle (13) that supplies an inert gas to the substrate. A nozzle moving mechanism (15, 52, . . . ) is disposed that moves the nozzles (12, 13) radially outward relative to a rotational center (Po) of the substrate, while maintaining the inert gas nozzle nearer to the rotational center of the substrate than the fluid nozzle.

    摘要翻译： 根据本发明的基板处理装置设置有保持基板（W）并使其旋转的旋转卡盘（3）。 处理液体供应系统（11 ...）被设置成将处理液体提供给由旋转卡盘旋转的基板。 设置有一个流体喷嘴（12），其向基体提供具有比处理液体挥发性更高的挥发性的干燥流体;以及惰性气体喷嘴（13），该惰性气体喷嘴向基板供应惰性气体。 设置喷嘴移动机构（15,52 ...），其相对于基板的旋转中心（Po）径向向外移动喷嘴（12,13），同时保持惰性气体喷嘴更靠近基板的旋转中心 衬底比流体喷嘴。