公开(公告)号：US11217451B2

公开(公告)日：2022-01-04

申请号：US16737526

申请日：2020-01-08

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hitoshi Kosugi ,  Shota Umezaki ,  Kouzou Tachibana ,  Ryo Yamamoto

IPC: H01L21/306 ,  H01L21/687 ,  H01L21/67

Abstract: A method includes rotating a substrate, supplying a first processing liquid from a first nozzle to the substrate during a first period, and supplying a second processing liquid from a second nozzle to the substrate during a second period. First and second liquid columns are formed by the first and second processing liquids during at least partially overlapped period of the first and second periods, respectively. The shapes and arrangements of the first and second liquid columns satisfy that: at least one of first and second central axis lines of the first and second liquid columns is inclined with respect to a rotational axis line of the substrate, first and second cut surfaces obtained by cutting the first and second liquid columns along a horizontal plane at least partially overlap each other, and any point on the first central axis line is located on the second central axis line.

公开(公告)号：US20170236729A1

公开(公告)日：2017-08-17

申请号：US15432044

申请日：2017-02-14

Applicant: Tokyo Electron Limited

Inventor： Yosuke Kawabuchi ,  Kouzou Tachibana ,  Mitsunori Nakamori ,  Kotaro Ooishi ,  Keisuke Egashira ,  Koji Tanaka ,  Hiroaki Inadomi ,  Masami Yamashita ,  Yoshiteru Fukuda ,  Koji Yamashita ,  Yu Tsurifune ,  Takuro Masuzumi

IPC: H01L21/67 ,  H01L21/687 ,  B08B3/04 ,  B08B3/10 ,  B08B3/14 ,  H01L21/02 ,  B08B3/08

CPC classification number: H01L21/67051 ,  H01L21/02057 ,  H01L21/67028

Abstract: Disclosed is a liquid processing method of drying a substrate held horizontally after supplying deionized water to the substrate. The liquid processing method includes: supplying the deionized water to a front surface of the substrate; supplying a first solvent to the front surface of the substrate after supplying the deionized water; supplying a water-repellent agent to the front surface of the substrate to impart water-repellency to the front surface of the substrate; supplying a second solvent to the front surface of the substrate to which water-repellency is imparted; and removing the second solvent from the front surface of the substrate. A specific gravity of the first solvent is smaller than a specific gravity of the water-repellent agent, and a specific gravity of the second solvent is larger than the specific gravity of the water-repellent agent.

公开(公告)号：US20220020611A1

公开(公告)日：2022-01-20

申请号：US17371384

申请日：2021-07-09

Applicant: Tokyo Electron Limited

Inventor： Kouzou Tachibana ,  Katsuhiro Morikawa ,  Kouichi Mizunaga

IPC: H01L21/67 ,  H01L21/687 ,  H01L21/02 ,  B08B3/02 ,  B08B3/08 ,  B08B3/04 ,  B08B3/10 ,  B08B13/00 ,  H05B1/02 ,  H05B3/26

Abstract: A substrate processing method includes forming, by supplying a chemical liquid onto a central portion of a substrate while rotating a rotary table at a first speed, a liquid film of the chemical liquid having a first thickness; forming, by supplying the chemical liquid onto the central portion while rotating the rotary table at a second speed lower than the first speed after the forming of the liquid film having the first thickness, a liquid film of the chemical liquid having a second thickness larger than the first thickness; and heating, by heating the rotary table in a state that the rotary table is rotated at a third speed lower than the second speed or in a state that the rotating of the rotary table is stopped after the forming of the liquid film having the second thickness, the substrate and the liquid film of the chemical liquid.

公开(公告)号：US10734255B2

公开(公告)日：2020-08-04

申请号：US15599067

申请日：2017-05-18

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kenji Sekiguchi ,  Itaru Kanno ,  Meitoku Aibara ,  Kouzou Tachibana

IPC: H01L21/67 ,  H01L21/02 ,  B08B7/00 ,  B08B3/04

Abstract: A substrate cleaning method includes supplying, onto a substrate, a film-forming processing liquid including a volatile component and a polar organic material that forms a processing film on the substrate, volatilizing the volatile component such that the film-forming processing liquid solidifies or cures and forms the processing film on the substrate, supplying, to the processing film formed on the substrate, a peeling processing liquid that peels off the processing film from the substrate and includes a non-polar solvent, and supplying, to the processing film, a dissolution processing liquid that dissolves the processing film and includes a polar solvent after the supplying of the peeling processing liquid. The non-polar solvent does not contain water, and the polar solvent does not contain water.

公开(公告)号：US20160300710A1

公开(公告)日：2016-10-13

申请号：US15084789

申请日：2016-03-30

Applicant: Tokyo Electron Limited

Inventor： Kotaro Oishi ,  Keisuke Egashira ,  Kouzou Tachibana ,  Hideaki Udou

IPC: H01L21/02 ,  B08B3/08 ,  B08B3/10 ,  H01L21/67

CPC classification number: H01L21/02057 ,  H01L21/67017 ,  H01L21/67028

Abstract: Disclosed is a substrate processing method that includes a water-repellency step, a rinse step, and a dry step. In the water-repellency step, a water-repellent agent which is heated to a first predetermined temperature and then reaches a second predetermined temperature lower than the first predetermined temperature, is supplied to a substrate. In the rinse step, a rinse liquid is supplied to the substrate after the water-repellency step. In the dry step, the rinse liquid on the substrate after the rinse step is removed.

Abstract translation: 公开了一种基材处理方法，其包括拒水性步骤，漂洗步骤和干燥步骤。 在拒水性步骤中，将被加热到第一预定温度然后达到比第一预定温度低的第二预定温度的拒水剂供应到基底。 在漂洗步骤中，在拒水步骤之后，向基材供给冲洗液。 在干燥步骤中，去除漂洗步骤后的基材上的漂洗液。

公开(公告)号：US11600500B2

公开(公告)日：2023-03-07

申请号：US17371384

申请日：2021-07-09

Applicant: Tokyo Electron Limited

Inventor： Kouzou Tachibana ,  Katsuhiro Morikawa ,  Kouichi Mizunaga

IPC: H01L21/67 ,  H01L21/687 ,  H01L21/02 ,  B08B3/02 ,  B08B3/08 ,  B08B3/10 ,  B08B13/00 ,  H05B1/02 ,  H05B3/26 ,  B08B3/04

Abstract: A substrate processing method includes forming, by supplying a chemical liquid onto a central portion of a substrate while rotating a rotary table at a first speed, a liquid film of the chemical liquid having a first thickness; forming, by supplying the chemical liquid onto the central portion while rotating the rotary table at a second speed lower than the first speed after the forming of the liquid film having the first thickness, a liquid film of the chemical liquid having a second thickness larger than the first thickness; and heating, by heating the rotary table in a state that the rotary table is rotated at a third speed lower than the second speed or in a state that the rotating of the rotary table is stopped after the forming of the liquid film having the second thickness, the substrate and the liquid film of the chemical liquid.

公开(公告)号：US20180182616A1

公开(公告)日：2018-06-28

申请号：US15854075

申请日：2017-12-26

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hiroki Yonekawa ,  Shuhei Takahashi ,  Kouzou Tachibana ,  Hideki Nishimura

IPC: H01L21/02 ,  H01L21/306 ,  H01L21/67

CPC classification number: H01L21/02057 ,  H01L21/30604 ,  H01L21/32134 ,  H01L21/67023 ,  H01L21/6704 ,  H01L21/67051 ,  H01L21/67075 ,  H01L21/6708

Abstract: A substrate processing method according to an embodiment includes an etching process, a temperature-difference forming process, and a rinsing process. The etching process supplies an etchant onto a first surface of a substrate on which a pattern is formed to etch the pattern. The temperature-difference forming process makes, in parallel with the etching process, a temperature in a lower portion of the pattern lower than a temperature in an upper portion of the pattern. The rinsing process supplies rinse liquid onto the first surface after the etching process to replace the etchant remaining on the pattern with the rinse liquid.

公开(公告)号：US09070731B2

公开(公告)日：2015-06-30

申请号：US14553496

申请日：2014-11-25

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kouzou Tachibana

IPC: H01L21/687 ,  B05C11/08 ,  B05C5/00 ,  B05C11/10 ,  H01L21/02 ,  H01L21/67 ,  H01L21/673

CPC classification number: B05C11/023 ,  F26B21/028 ,  G03F7/162 ,  H01L21/6715 ,  H01L21/68721 ,  H01L21/68742

Abstract: A coating film forming apparatus includes a substrate holding unit, a ring-shaped member annularly installed along a circumferential direction of the substrate so as to cover an upper side of a peripheral edge portion of the substrate, and a control unit that outputs a control signal so as to perform: positioning the ring-shaped member at a processing position where an air flow flowing above the peripheral edge portion of the substrate is straightened; rotating the substrate at a first revolution number such that a coating liquid supplied to a central portion of the substrate is diffused toward the peripheral edge portion by a centrifugal force; bringing the ring-shaped member to a retreated position where an air flow flowing near a front surface of the substrate is prevented from becoming turbulent; and reducing the revolution number of the substrate to a second revolution number lower than the first revolution number.

Abstract translation: 涂膜形成装置包括：基板保持单元，沿着基板的圆周方向环状地安装以覆盖基板的周缘部的上侧的环状构件;以及控制单元，其输出控制信号 以便执行：将所述环形构件定位在流过所述基板的周缘部分的空气流被拉直的处理位置; 以第一转数旋转基板，使得供给到基板的中心部分的涂布液通过离心力向周缘部分扩散; 使环状部件处于退避位置，在该位置处防止在基板的前表面附近流动的空气流变得湍流; 并将基板的转数减小到低于第一转数的第二转数。

公开(公告)号：US20250087476A1

公开(公告)日：2025-03-13

申请号：US18728564

申请日：2023-01-05

Applicant: Tokyo Electron Limited

Inventor： Kouzou Tachibana

IPC: H01L21/02 ,  H01L21/67 ,  H01L21/687

Abstract: A substrate processing method of cleaning a substrate having a patterned Si film while removing an oxide on the Si film includes removing the oxide by supplying a cleaning liquid containing hydrofluoric acid and water to the substrate while rotating the substrate; and mixing an organic solvent, which has miscibility with the water and has a lower surface tension than the water, into the cleaning liquid. The mixing of the organic solvent is performed during the removing of the oxide and after a predetermined time has elapsed from a start of the removing of the oxide.

公开(公告)号：US10770284B2

公开(公告)日：2020-09-08

申请号：US15854075

申请日：2017-12-26

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hiroki Yonekawa ,  Shuhei Takahashi ,  Kouzou Tachibana ,  Hideki Nishimura

IPC: H01L21/02 ,  H01L21/306 ,  H01L21/67 ,  H01L21/3213

Abstract: A substrate processing method according to an embodiment includes an etching process, a temperature-difference forming process, and a rinsing process. The etching process supplies an etchant onto a first surface of a substrate on which a pattern is formed to etch the pattern. The temperature-difference forming process makes, in parallel with the etching process, a temperature in a lower portion of the pattern lower than a temperature in an upper portion of the pattern. The rinsing process supplies rinse liquid onto the first surface after the etching process to replace the etchant remaining on the pattern with the rinse liquid.