公开(公告)号：US20160046492A1

公开(公告)日：2016-02-18

申请号：US14779577

申请日：2014-03-26

Applicant: TOKYO ELECTRON LIMITED

Inventor： Takashi MATSUMOTO ,  Kenjiro KOIZUMI

IPC: C01B31/02 ,  H01L21/768 ,  H01L21/285

CPC classification number: C01B32/164 ,  B01J23/462 ,  B01J23/52 ,  B01J23/745 ,  B01J23/75 ,  B01J23/755 ,  B01J35/0013 ,  B01J37/349 ,  C01B32/162 ,  H01L21/28556 ,  H01L21/76876 ,  H01L2221/1094

Abstract: Provided is a method for growing carbon nanotubes that enables the growth of high-density carbon nanotubes. A high frequency bias voltage is applied to a loading table on which a wafer W having a catalytic metal layer is mounted to generate a bias potential on the surface of the wafer W, and oxygen plasma is used to micronize the catalytic metal layer to form catalytic metal particles. Thereafter, hydrogen plasma is used to reduce the surface of the catalytic metal particles to form activated catalytic metal particles having an activated surface. By using each activated catalytic metal particles as a nucleus, carbon nanotubes are formed.

Abstract translation: 提供一种用于生长能够生长高密度碳纳米管的碳纳米管的方法。 将高频偏置电压施加到其上安装有具有催化金属层的晶片W的负载台，以在晶片W的表面上产生偏置电位，并使用氧等离子体来微调催化金属层以形成催化剂 金属颗粒。 此后，使用氢等离子体来减少催化金属颗粒的表面以形成具有活化表面的活化的催化金属颗粒。 通过使用每个活化的催化金属颗粒作为核，形成碳纳米管。

公开(公告)号：US20150259801A1

公开(公告)日：2015-09-17

申请号：US14724913

申请日：2015-05-29

Applicant: TOKYO ELECTRON LIMITED

Inventor： Takashi MATSUMOTO ,  Masahito SUGIURA ,  Kenjiro KOIZUMI ,  Yusaku KASHIWAGI

IPC: C23C16/503 ,  C23C16/26 ,  C23C16/44 ,  C23C16/511 ,  C23C16/458 ,  C23C16/455

CPC classification number: C23C16/503 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/16 ,  C23C16/26 ,  C23C16/4412 ,  C23C16/455 ,  C23C16/458 ,  C23C16/511 ,  H01L21/28556 ,  H01L21/76879 ,  H01L23/5226 ,  H01L23/53276 ,  H01L2221/1094 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method for forming carbon nanotubes includes preparing a target object having a surface on which one or more openings are formed, each of the openings having a catalyst metal layer on a bottom thereof; performing an oxygen plasma process on the catalyst metal layers; and activating the surfaces of the catalyst metal layers by performing a hydrogen plasma process on the metal catalyst layers subjected to the oxygen plasma process. The method further includes filling carbon nanotubes in the openings on the target object by providing an electrode member having a plurality of through holes above the target object in a processing chamber, and then growing the carbon nanotubes by plasma CVD on the activated catalyst metal layer by diffusing active species in a plasma generated above the electrode member toward the target object through the through holes while applying a DC voltage to the electrode member.

Abstract translation: 形成碳纳米管的方法包括制备具有其上形成有一个或多个开口的表面的目标物体，每个开口在其底部具有催化剂金属层; 在催化剂金属层上进行氧等离子体处理; 以及通过对经受氧等离子体处理的金属催化剂层进行氢等离子体处理来激活催化剂金属层的表面。 该方法还包括通过在处理室中提供具有在目标物体上方的多个通孔的电极部件，然后在活化的催化剂金属层上通过等离子体CVD将碳纳米管生长在活性催化剂金属层上，从而在目标物体的开口中填充碳纳米管 在电极构件上方产生的等离子体中的活性物质通过通孔朝向目标物体扩散，同时向电极构件施加DC电压。

公开(公告)号：US20220165568A1

公开(公告)日：2022-05-26

申请号：US17438132

申请日：2020-02-19

Applicant: TOKYO ELECTRON LIMITED

Inventor： Nobutake KABUKI ,  Masahito SUGIURA ,  Takashi MATSUMOTO ,  Kenjiro KOIZUMI ,  Ryota IFUKU

IPC: H01L21/02 ,  C23C16/34 ,  C23C16/505 ,  H01J37/32

Abstract: A method for forming a hexagonal boron nitride film comprises: providing a substrate; and generating plasma of a boron-containing gas and a nitrogen-containing gas in a plasma generation region located at a position apart from the substrate to form the hexagonal boron nitride film on the surface of the substrate by plasma CVD using plasma diffused from the plasma generation region.

公开(公告)号：US20130059091A1

公开(公告)日：2013-03-07

申请号：US13665724

申请日：2012-10-31

Applicant: Tokyo Electron Limited

Inventor： Takashi MATSUMOTO ,  Masahito SUGIURA ,  Kenjiro KOIZUMI

IPC: C23C16/26 ,  B82Y40/00

CPC classification number: C23C16/503 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/16 ,  C23C16/26 ,  C23C16/4412 ,  C23C16/455 ,  C23C16/458 ,  C23C16/511 ,  H01L21/28556 ,  H01L21/76879 ,  H01L23/5226 ,  H01L23/53276 ,  H01L2221/1094 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method for forming carbon nanotubes includes preparing a target object having a surface on which one or more openings are formed, each of the openings having a catalyst metal layer on a bottom thereof; performing an oxygen plasma process on the catalyst metal layers; and activating the surfaces of the catalyst metal layers by performing a hydrogen plasma process on the metal catalyst layers subjected to the oxygen plasma process. The method further includes filling carbon nanotubes in the openings on the target object by providing an electrode member having a plurality of through holes above the target object in a processing chamber, and then growing the carbon nanotubes by plasma CVD on the activated catalyst metal layer by diffusing active species in a plasma generated above the electrode member toward the target object through the through holes while applying a DC voltage to the electrode member.