FILM FORMING METHOD AND FILM FORMING APPARATUS

    公开(公告)号:US20200058504A1

    公开(公告)日:2020-02-20

    申请号:US16540347

    申请日:2019-08-14

    Abstract: A method of selectively forming a silicon film on an upper portion of each of protruded portions formed on a substrate, which includes: supplying a first silicon-containing gas to the substrate and forming a first silicon film so that a film thickness of the first silicon film becomes thicker in the upper portion rather than in a lower portion of a sidewall of each protruded portion; subsequently, supplying an etching gas to the substrate and removing the first silicon film on the sidewall of each protruded portion while leaving the first silicon film on an upper surface of each protruded portion; and subsequently, supplying a second silicon-containing gas to the substrate and forming a second silicon film so that a film thickness of the second silicon film becomes thicker in the upper portion rather than in the lower portion of a sidewall of each protruded portion.

    Film Forming Method and Film Forming Apparatus

    公开(公告)号:US20200308696A1

    公开(公告)日:2020-10-01

    申请号:US16837109

    申请日:2020-04-01

    Abstract: There is provided a film forming method including: supplying a halogen-free silicon raw material gas into a processing container that accommodates a substrate therein in a halogen-free silicon raw material gas supply process; supplying a halogen-containing silicon raw material gas into the processing container in a halogen-containing silicon raw material gas supply process; removing the halogen-containing silicon raw material gas inside the processing container in a halogen-containing silicon raw material gas removal process; and repeating a cycle including a sequence of the halogen-free silicon raw material gas supply process, the halogen-containing silicon raw material gas supply process, and the halogen-containing silicon raw material gas removal process in a continuous manner.

    SUBSTRATE PROCESSING APPARATUS
    6.
    发明申请

    公开(公告)号:US20200312677A1

    公开(公告)日:2020-10-01

    申请号:US16821133

    申请日:2020-03-17

    Abstract: A substrate processing apparatus includes a processing container configured to accommodate a plurality of substrates therein, a gas supply configured to supply a first raw material gas of a compound containing Si or Ge and H and a second raw material gas of a compound containing Si or Ge and a halogen element into the processing container; and an exhauster configured to evacuate an inside of the processing container, wherein the gas supply has a dispersion nozzle provided with a plurality of gas holes for discharging the first raw material gas and the second raw material gas, and the substrate processing apparatus further comprises a heater configured to heat the first raw material gas and the second raw material gas in the dispersion nozzle.

    Method for Forming Semiconductor Film and Film Forming Device

    公开(公告)号:US20200168455A1

    公开(公告)日:2020-05-28

    申请号:US16693748

    申请日:2019-11-25

    Abstract: According to one embodiment of the present disclosure, a method for forming a crystallized semiconductor film having a specific grain size on a substrate includes: forming a seed layer on the substrate accommodated in a processing container; vacuuming an interior of the processing container to a medium vacuum or less in a state in which the substrate, on which the seed layer is formed, is accommodated in the processing container; forming an amorphous semiconductor film on the seed layer after vacuuming the interior of the processing container; and crystallizing the amorphous semiconductor film by heat processing.

    FILM FORMING METHOD AND FILM FORMING APPARATUS

    公开(公告)号:US20200058499A1

    公开(公告)日:2020-02-20

    申请号:US16539157

    申请日:2019-08-13

    Abstract: A film forming method for forming a silicon film having a step coverage on a substrate having a recess in a surface of the substrate, the film forming method comprising: forming a silicon film such that a film thickness on an upper portion of a side wall of the recess is thicker than a film thickness on a lower portion of the side wall of the recess by supplying a silicon-containing gas to the substrate; and etching a portion of the silicon film conformally by supplying an etching gas to the substrate, wherein the act of forming the silicon film and the act of etching the portion of the silicon film are performed a number of times which is determined depending on the step coverage.

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