公开(公告)号：US20170213703A1

公开(公告)日：2017-07-27

申请号：US15413631

申请日：2017-01-24

Applicant: TOKYO ELECTRON LIMITED

Inventor： Ryota SAKANE

IPC: H01J37/32 ,  H01L21/3065 ,  H01L21/67

CPC classification number: H01J37/3299 ,  H01J37/32082 ,  H01J37/32091 ,  H01J37/32183 ,  H01J37/32568 ,  H01J37/32642 ,  H01J2237/3343 ,  H01L21/3065 ,  H01L21/67069

Abstract: The plasma processing apparatus includes a first electrode to which high frequency power is applied, a second electrode that functions as a counter electrode with respect to the first electrode, and a controller configured to control distribution of plasma generated between the first electrode and the second electrode. The first electrode is, for example, an upper electrode. The second electrode includes a lower electrode, and a peripheral portion disposed around the lower electrode. The peripheral portion includes a plurality of split electrodes divided in a peripheral direction. For each split electrode, the controller controls an impedance between the plasma and a ground via the split electrode.

公开(公告)号：US20150214653A1

公开(公告)日：2015-07-30

申请号：US14597312

申请日：2015-01-15

Applicant: Tokyo Electron Limited

Inventor： Ryota SAKANE ,  Dai KITAGAWA

IPC: H01R13/52

CPC classification number: H01R13/631 ,  C23C16/4586 ,  C23C16/509 ,  C23C16/5096 ,  H01J37/32577 ,  H01R13/53 ,  H01R2103/00

Abstract: A feeder-cover structure includes a power feeder including a socket and a plug fitted together, a cover structure that covers and seals the power feeder, and a supply mechanism that supplies dry air or an inert gas into the cover structure. A gap is formed between the power feeder and the cover structure such that the dry air or the inert gas is supplied through the gap into the cover structure.

Abstract translation: 供料器盖结构包括一个供电器，它包括一个插座和一个插在一起的插头，一个覆盖和密封供电器的盖结构，以及一个将干燥空气或惰性气体供给到盖结构中的供应机构。 在供电器和盖结构之间形成间隙，使得干燥空气或惰性气体通过间隙供应到盖结构中。

公开(公告)号：US20220223388A1

公开(公告)日：2022-07-14

申请号：US17569782

申请日：2022-01-06

Applicant: Tokyo Electron Limited

Inventor： Ryota SAKANE

IPC: H01J37/32

Abstract: An exhaust ring assembly disposed around a substrate support, includes: a first annular member having first exhaust holes and first rod-shaped portions alternately arranged in a circumferential direction, each of the first exhaust holes extending in a radial direction and each of the first rod-shaped portions extending in the radial direction; and a second annular member disposed below the first annular member and having second exhaust holes and second rod-shaped portions alternately arranged in the circumferential direction, each of the second exhaust holes extending in the radial direction and each of the second rod-shaped portions extending in the radial direction, wherein the first rod-shaped portions and the second rod-shaped portions do not overlap each other when viewed from above and at least one of each of the first rod-shaped portions and each of the second rod-shaped portions has an upwardly-tapered shape.

公开(公告)号：US20220037131A1

公开(公告)日：2022-02-03

申请号：US17386663

申请日：2021-07-28

Applicant: Tokyo Electron Limited

Inventor： Ryota SAKANE

IPC: H01J37/32 ,  H01L21/683

Abstract: A stage for mounting a substrate thereon, includes: an electrostatic chuck configured to attract the substrate; a base having a first region on which the electrostatic chuck is supported and a second region on which an edge ring arranged around the substrate is supported, the first region and the second region being divided by a groove extending in an annular shape; and a shield provided in the groove and configured to thermally separate the first region and the second region.

公开(公告)号：US20190285177A1

公开(公告)日：2019-09-19

申请号：US16353479

申请日：2019-03-14

Applicant: TOKYO ELECTRON LIMITED

Inventor： Ryota SAKANE

IPC: F16J15/02

Abstract: A seal structure includes an elastic body and a cap which are located in a boundary between a first component and a second component that seal and define a gas flow path. The flow path is defined by a first through hole in the first component and a second through hole in the second component, the elastic body has a loop-shaped second opening which overlaps with a first opening of the first through hole, and the cap covers the elastic body such that the first opening, the second opening, and a third opening of the cap overlap with each other. The cap is fitted into a groove in the first surface and is in close contact with the second surface. The cap and second component are in close contact with each other to have slidability.

公开(公告)号：US20240249922A1

公开(公告)日：2024-07-25

申请号：US18628349

申请日：2024-04-05

Applicant: Tokyo Electron Limited

Inventor： Ryota SAKANE

IPC: H01J37/32

CPC classification number: H01J37/3255 ,  H01J37/32091 ,  H01J37/32559 ,  H01J37/32651 ,  H01J37/32577 ,  H01J2237/327

Abstract: A plasma processing apparatus includes a chamber, a power source, a silicon member, and a conductive film. The chamber provides a plasma processing space. The power source supplies radio-frequency power for generating plasma in the plasma processing space. The silicon member is made of a silicon-containing material, is disposed in the chamber, and has a first surface facing the plasma processing space. The conductive film is made of a conductive material and formed on a second surface that does not face the plasma processing space of the silicon member.

公开(公告)号：US20220375730A1

公开(公告)日：2022-11-24

申请号：US17747861

申请日：2022-05-18

Applicant: TOKYO ELECTRON LIMITED

Inventor： Ryota SAKANE

IPC: H01J37/32

Abstract: A plasma processing apparatus includes a plasma processing chamber whose wall has a multi-layer structure including a layer made of a material having a permeability higher than a permeability of aluminum and a loading/unloading port disposed on the wall of the plasma processing chamber to load/unload a substrate into/from the plasma processing chamber. The plasma processing apparatus includes a substrate support disposed in the plasma processing chamber.

公开(公告)号：US20180226245A1

公开(公告)日：2018-08-09

申请号：US15891501

申请日：2018-02-08

Applicant: TOKYO ELECTRON LIMITED

Inventor： Ryota SAKANE

IPC: H01L21/02 ,  H01J37/32 ,  H05H1/46

CPC classification number: H01L21/02252 ,  H01J37/32082 ,  H01J37/32091 ,  H01J37/32183 ,  H01J37/32348 ,  H01J37/3244 ,  H01J37/32568 ,  H05H1/46

Abstract: Disclosed is a plasma processing apparatus including: a first electrode to which a high frequency power is supplied; a second electrode that functions as a counter electrode with respect to the first electrode; a plurality of dielectric units arranged between plasma generated between the first electrode and the second electrode, and the second electrode; and a controller that controls an impedance between the plasma and the second electrode via each of the dielectric units by independently controlling a position or a dielectric constant of each of the dielectric units.