公开(公告)号：US11594430B2

公开(公告)日：2023-02-28

申请号：US16124529

申请日：2018-09-07

Applicant: Tokyo Electron Limited

Inventor： Takafumi Tsuchiya ,  Yuki Ishii ,  Hiroyuki Masutomi ,  Seigo Fujitsu

IPC: H01L21/67

Abstract: A substrate liquid processing apparatus A1 includes a processing tub 41 accommodating a processing liquid 43 and a substrate 8; a gas nozzle 70 discharging a gas into a lower portion within the processing tub 41; a gas supply unit 90 supplying the gas; a gas supply line 93 connecting the gas nozzle 70 with the gas supply unit 90; a decompression unit 95 introducing the processing liquid 43 within the processing tub 41 into the gas supply line 93 by decompressing the gas supply line 93; and a control unit 7 performing a first control of controlling the gas supply unit 90 to stop supply of the gas and controlling the decompression unit 95 to introduce the processing liquid 43 into the gas supply line 93 in a part of an idle period during which the substrate 8 is not accommodated in the processing tub 41.

公开(公告)号：US20190080937A1

公开(公告)日：2019-03-14

申请号：US16124529

申请日：2018-09-07

Applicant: Tokyo Electron Limited

Inventor： Takafumi Tsuchiya ,  Yuki Ishii ,  Hiroyuki Masutomi ,  Seigo Fujitsu

IPC: H01L21/67

Abstract: A substrate liquid processing apparatus A1 includes a processing tub 41 accommodating a processing liquid 43 and a substrate 8; a gas nozzle 70 discharging a gas into a lower portion within the processing tub 41; a gas supply unit 90 supplying the gas; a gas supply line 93 connecting the gas nozzle 70 with the gas supply unit 90; a decompression unit 95 introducing the processing liquid 43 within the processing tub 41 into the gas supply line 93 by decompressing the gas supply line 93; and a control unit 7 performing a first control of controlling the gas supply unit 90 to stop supply of the gas and controlling the decompression unit 95 to introduce the processing liquid 43 into the gas supply line 93 in a part of an idle period during which the substrate 8 is not accommodated in the processing tub 41.

公开(公告)号：US20210358773A1

公开(公告)日：2021-11-18

申请号：US17318019

申请日：2021-05-12

Applicant: Tokyo Electron Limited

Inventor： Takumi Honda ,  Hiroyuki Masutomi

IPC: H01L21/67 ,  H01L21/3213

Abstract: A substrate processing apparatus includes a processing tub configured to perform an etching processing therein by immersing multiple substrates in a processing liquid; a first and second discharge opening groups disposed under the substrates within the processing tub, and configured to discharge the processing liquid into the processing tub; a first adjusting device configured to change a flow rate of the processing liquid discharged from the first discharge opening group; a second adjusting device configured to change a flow rate of the processing liquid discharged from the second discharge opening group; a controller configured to control the first and second adjusting devices to perform, during the etching processing, a flow rate adjusting processing of increasing and decreasing the flow rate of the processing liquid discharged from the first discharge opening group and the flow rate of the processing liquid discharged from the second discharge opening group to different values.

公开(公告)号：US20190103294A1

公开(公告)日：2019-04-04

申请号：US16150513

申请日：2018-10-03

Applicant: Tokyo Electron Limited

Inventor： Hiroyuki Masutomi ,  Takashi Ikeda

IPC: H01L21/67 ,  H01L21/02 ,  H01L21/4757

Abstract: A substrate liquid processing apparatus includes an inner tub 34A having a top opening and storing a processing liquid therein; an outer tub 34B provided outside the inner tub; a first cover body 71 configured to move between a closing position where a first region of the top opening is closed and an opening position where the first region is opened; and a second cover body 72 configured to move between a closing position where a second region of the top opening is closed and an opening position where the second region is opened. The first cover body has a bottom wall 711R and a sidewall 712R extended upwards therefrom, and the second cover body has a bottom wall 721R and a sidewall 722R extended upwards therefrom. Further, when being placed at the closing positions, the sidewalls closely face each other with a gap G having a height H.

公开(公告)号：US11637026B2

公开(公告)日：2023-04-25

申请号：US16150513

申请日：2018-10-03

Applicant: Tokyo Electron Limited

Inventor： Hiroyuki Masutomi ,  Takashi Ikeda

IPC: H01L21/67 ,  H01L21/677

Abstract: A substrate liquid processing apparatus includes an inner tub 34A having a top opening and storing a processing liquid therein; an outer tub 34B provided outside the inner tub; a first cover body 71 configured to move between a closing position where a first region of the top opening is closed and an opening position where the first region is opened; and a second cover body 72 configured to move between a closing position where a second region of the top opening is closed and an opening position where the second region is opened. The first cover body has a bottom wall 711R and a sidewall 712R extended upwards therefrom, and the second cover body has a bottom wall 721R and a sidewall 722R extended upwards therefrom. Further, when being placed at the closing positions, the sidewalls closely face each other with a gap G having a height H.

公开(公告)号：US11309194B2

公开(公告)日：2022-04-19

申请号：US15883481

申请日：2018-01-30

Applicant: Tokyo Electron Limited

Inventor： Koji Tanaka ,  Toshiyuki Shiokawa ,  Koji Yamashita ,  Hiroyuki Masutomi ,  Hitoshi Kosugi ,  Takao Inada ,  Takashi Ikeda ,  Tsukasa Hirayama

IPC: H01L21/67 ,  H01L21/673 ,  H01L21/677

Abstract: A substrate liquid treatment apparatus includes an inner tank configured to store a treatment liquid and having an upper opening, an outer tank disposed outside the inner tank, and a lid movable between a close position for closing the upper opening of the inner tank and an open position for opening the upper opening of the inner tank. The lid includes a main portion that covers the upper opening of the inner tank when the lid is positioned at the close position, and a splash shielding portion connected to the main portion. When the lid is positioned at the close position, the splash shielding portion extends from a position higher than an upper end of a side wall of the inner tank adjacent to the splash shielding portion to a position which is lower than the upper end of the side wall and which is on the outer tank side of the side wall.

公开(公告)号：US20190148176A1

公开(公告)日：2019-05-16

申请号：US16167863

申请日：2018-10-23

Applicant: Tokyo Electron Limited

Inventor： Koji Tanaka ,  Takashi Ikeda ,  Hiroyuki Masutomi

IPC: H01L21/67 ,  H01L21/673

Abstract: A substrate processing apparatus according to an embodiment includes a substrate processing tank, a processing liquid supply nozzle, and a pressure regulating plate. The processing liquid supply nozzle is provided in a lower portion within the substrate processing tank, and ejects the processing liquid from a plurality of ejection ports. The pressure regulating plate is provided between the processing liquid supply nozzle and the substrate in the substrate processing tank and has a plurality of holes through which the processing liquid flows. The pressure regulating plate is configured to adjust the inflow pressure of the processing liquid ejected from the processing liquid supply nozzle. In addition, the pressure regulating plate includes ribs that protrude from a processing liquid supply nozzle side surface thereof so as to partition the processing liquid supply nozzle side surface into a plurality of partitioned regions.

公开(公告)号：US11972958B2

公开(公告)日：2024-04-30

申请号：US17318019

申请日：2021-05-12

Applicant: Tokyo Electron Limited

Inventor： Takumi Honda ,  Hiroyuki Masutomi

IPC: H01L21/67 ,  H01L21/3213

CPC classification number: H01L21/67086 ,  H01L21/32134

Abstract: A substrate processing apparatus includes a processing tub configured to perform an etching processing therein by immersing multiple substrates in a processing liquid; a first and second discharge opening groups disposed under the substrates within the processing tub, and configured to discharge the processing liquid into the processing tub; a first adjusting device configured to change a flow rate of the processing liquid discharged from the first discharge opening group; a second adjusting device configured to change a flow rate of the processing liquid discharged from the second discharge opening group; a controller configured to control the first and second adjusting devices to perform, during the etching processing, a flow rate adjusting processing of increasing and decreasing the flow rate of the processing liquid discharged from the first discharge opening group and the flow rate of the processing liquid discharged from the second discharge opening group to different values.

公开(公告)号：US10483137B2

公开(公告)日：2019-11-19

申请号：US15649757

申请日：2017-07-14

Applicant: Tokyo Electron Limited

Inventor： Hiroyuki Masutomi ,  Toshiyuki Shiokawa ,  Koji Tanaka ,  Takami Satoh

IPC: H01L21/67 ,  H01L21/673 ,  H01L21/311 ,  G02F1/1333 ,  H01L21/8234 ,  G02F1/13

Abstract: The substrate liquid processing apparatus includes a processing bath that accommodates substrates, and a plurality of gas supply pipes provided in a processing bath. Ejection holes of one gas supply pipe and ejection holes of another adjacent gas supply pipe do not overlap each other in a direction parallel to the circuit-formed surfaces of the substrates.

公开(公告)号：US20180025927A1

公开(公告)日：2018-01-25

申请号：US15649757

申请日：2017-07-14

Applicant: Tokyo Electron Limited

Inventor： Hiroyuki Masutomi ,  Toshiyuki Shiokawa ,  Koji Tanaka ,  Takami Satoh

IPC: H01L21/67

CPC classification number: H01L21/67253 ,  G02F1/1303 ,  G02F1/1333 ,  H01L21/31111 ,  H01L21/67051 ,  H01L21/6708 ,  H01L21/67086 ,  H01L21/67109 ,  H01L21/67313 ,  H01L21/823431

Abstract: The substrate liquid processing apparatus includes a processing bath that accommodates substrates, and a plurality of gas supply pipes provided in a processing bath. Ejection holes of one gas supply pipe and ejection holes of another adjacent gas supply pipe do not overlap each other in a direction parallel to the circuit-formed surfaces of the substrates.