ETCHING APPARATUS
    1.
    发明申请
    ETCHING APPARATUS 有权
    蚀刻装置

    公开(公告)号:US20150013908A1

    公开(公告)日:2015-01-15

    申请号:US14499341

    申请日:2014-09-29

    Abstract: An etching apparatus includes a controller configured to control a high frequency power supply to supply a high frequency power to a mounting table for etching a polymer layer formed on a base layer placed on the mounting table, using plasma generated from a predetermined gas supplied from a gas supply source by the high frequency power, the polymer layer having a periodic pattern of a first polymer and a second polymer formed by self-assembling the first polymer and the second polymer of a block copolymer that is capable of being self-assembled, the high frequency power being set for etching the polymer layer using the generated plasma such that the second polymer is removed and a pattern of the first polymer is formed for subsequently etching the base layer using the pattern of the first polymer as a mask.

    Abstract translation: 一种蚀刻装置,包括:控制器,被配置为控制高频电源,以向安装台提供高频电力,用于使用从从安装台提供的预定气体产生的等离子体产生的等离子体来蚀刻形成在安装台上的基底层上的聚合物层 通过高频功率的气体供应源,聚合物层具有第一聚合物的周期性图案和通过自组装能够自组装的嵌段共聚物的第一聚合物和第二聚合物形成的第二聚合物, 设置高频功率以使用所产生的等离子体蚀刻聚合物层,使得除去第二聚合物并形成第一聚合物的图案,用于随后使用第一聚合物的图案作为掩模蚀刻基底层。

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