公开(公告)号：US20140062296A1

公开(公告)日：2014-03-06

申请号：US14011860

申请日：2013-08-28

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yohei YAMAZAWA ,  Takafumi KIMURA ,  Chishio KOSHIMIZU

IPC: H05H1/46

CPC classification number: H05H1/46 ,  H01J37/321 ,  H01J37/3211 ,  H01J37/32119 ,  H05H2001/4667

Abstract: A plasma processing apparatus includes: a mounting table, disposed in a processing chamber, configured to mount thereon the substrate; an inductively coupled antenna disposed outside the processing chamber to be opposite to the mounting table, the inductively coupled antenna being connected to a high frequency power supply; and a window member forming a wall of the processing chamber which faces the inductively coupled antenna. The window member includes a plurality of conductive windows made of a conductive material, and dielectric portions disposed between the conductive windows. The inductively coupled antenna is extended in a predetermined direction on the window member and electrically connected to one of the conductive windows, and electrical connection by conductors is sequentially performed from the one of the conductive windows to the other conductive windows in the same direction as an extension direction of the inductively coupled antenna.

Abstract translation: 一种等离子体处理装置，包括：安装台，设置在处理室中，构造成安装在其上; 电感耦合天线，其设置在与所述安装台相对的所述处理室的外部，所述感应耦合天线连接到高频电源; 以及形成处理室的壁的窗构件，其面对电感耦合天线。 窗构件包括由导电材料制成的多个导电窗，以及设置在导电窗之间的电介质部分。 电感耦合天线在窗构件上沿预定方向延伸并电连接到导电窗中的一个，并且通过导体的电连接从一个导电窗口顺序地执行到与其它导电窗口相同的方向 电感耦合天线的延伸方向。

公开(公告)号：US20130337635A1

公开(公告)日：2013-12-19

申请号：US13916847

申请日：2013-06-13

Applicant: Tokyo Electron Limited

Inventor： Jun YAMAWAKU ,  Chishio KOSHIMIZU ,  Mitsuhiro TACHIBANA ,  Hitoshi KATO ,  Takeshi KOBAYASHI ,  Shigehiro MIURA ,  Takafumi KIMURA

IPC: H01L21/02

CPC classification number: H01L21/02104 ,  C23C16/45519 ,  C23C16/4554 ,  C23C16/45551 ,  C23C16/509 ,  H01L21/02164 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/0234 ,  H01L21/68764 ,  H01L21/68771

Abstract: A film deposition apparatus configured to perform a film deposition process on a substrate in a vacuum chamber includes a turntable configured to rotate a substrate loading area to receive the substrate, a film deposition area including at least one process gas supplying part configured to supply a process gas onto the substrate loading area and configured to form a thin film by depositing at least one of an atomic layer and a molecular layer along with a rotation of the turntable, a plasma treatment part provided away from the film deposition area in a rotational direction of the turntable and configured to treat the at least one of the atomic layer and the molecular layer for modification by plasma, and a bias electrode part provided under the turntable without contacting the turntable and configured to generate bias potential to attract ions in the plasma toward the substrate.

Abstract translation: 一种被配置为在真空室中的基板上进行成膜处理的成膜装置，包括转盘，其被配置为使基板装载区域旋转以接收基板;膜沉积区域，包括至少一个工艺气体供给部件， 气体到基板装载区域，并且被配置为通过沉积转盘的旋转中的原子层和分子层中的至少一个来形成薄膜，等离子体处理部件沿着旋转方向设置在膜沉积区域 所述转盘并且被配置为处理所述原子层和所述分子层中的至少一个以进行等离子体修饰;以及偏置电极部分，其设置在所述转盘下方，而不接触所述转台并且被配置为产生偏置电位以将等离子体中的离子吸引到 基质。