公开(公告)号：US20210249277A1

公开(公告)日：2021-08-12

申请号：US17271165

申请日：2019-08-23

Applicant: TOKYO ELECTRON LIMITED

Inventor： Takahiro SHIOZAWA ,  Masashi ENOMOTO

IPC: H01L21/461 ,  H01L21/033 ,  H01L21/48

Abstract: A substrate processing method is a method of processing a substrate on which a metal-containing liquid for a film below a resist is applied, wherein prior to a heating process of performing a heat treatment on the substrate applied with the metal-containing liquid, the substrate processing method includes: a deprotection promoting process of promoting deprotection of functional groups in a material for the film included in the substrate on which the metal-containing liquid has been applied; a solvent removing process of removing a solvent included in the metal-containing liquid on the substrate; and a moisture absorbing process of bringing a surface of the substrate into contact with moisture.

公开(公告)号：US20180164689A1

公开(公告)日：2018-06-14

申请号：US15823661

申请日：2017-11-28

Applicant: Tokyo Electron Limited

Inventor： Yohei SANO ,  Shinichiro KAWAKAMI ,  Masashi ENOMOTO ,  Takahiro SHIOZAWA ,  Keisuke YOSHIDA ,  Tomoya ONITSUKA

IPC: G03F7/38 ,  H01L21/027 ,  H01L21/3105 ,  H01L21/67 ,  G03F7/004

CPC classification number: G03F7/38 ,  G03F7/0043 ,  H01L21/0273 ,  H01L21/0274 ,  H01L21/31058 ,  H01L21/67017 ,  H01L21/67103 ,  H01L21/6719

Abstract: A thermal treatment apparatus that performs a thermal treatment on a metal-containing film formed on a substrate, includes: a treatment chamber that houses the substrate; a thermal treatment plate that is provided inside the treatment chamber and mounts the substrate thereon; and a moisture supply unit that supplies moisture to the metal-containing film, wherein at the time of the thermal treatment, moisture is supplied to the metal-containing film of the substrate on the thermal treatment plate and an atmosphere in the treatment chamber is exhausted from a central portion of the treatment chamber.

公开(公告)号：US20140363976A1

公开(公告)日：2014-12-11

申请号：US14297661

申请日：2014-06-06

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yuichiro MIYATA ,  Keiichi TANAKA ,  Kenichi UEDA ,  Takahiro SHIOZAWA

IPC: H01L21/3105 ,  H01L21/67

CPC classification number: H01L21/0273 ,  G03F7/422 ,  H01L21/02065 ,  H01L21/31133 ,  H01L21/67115 ,  H01L21/6715 ,  H01L21/7684 ,  H01L2224/11916

Abstract: A substrate processing method is performed to improve surface roughness of a pattern mask formed on a substrate by being exposed and developed. The method includes supplying a first solvent in a gaseous state to a surface of the substrate to dissolve the pattern mask, and supplying a second solvent to the surface of the substrate, which is supplied with the first solvent, to dissolve the pattern mask, wherein a permeability of the second solvent is lower than a permeability of the first solvent.

Abstract translation: 进行基板处理方法，以通过曝光和显影来改善形成在基板上的图案掩模的表面粗糙度。 该方法包括将气态的第一溶剂供给到基板的表面以溶解图案掩模，并将第二溶剂供应到提供有第一溶剂的基板的表面以溶解图案掩模，其中 第二溶剂的渗透性低于第一溶剂的渗透性。