公开(公告)号：US20170294303A1

公开(公告)日：2017-10-12

申请号：US15471360

申请日：2017-03-28

Applicant: TOKYO ELECTRON LIMITED

Inventor： Keisuke YOSHIDA

IPC: H01L21/02 ,  B05D3/06 ,  B05C11/10 ,  B05D3/02 ,  H01L21/32 ,  B05C9/14

CPC classification number: H01L21/02175 ,  B05C9/14 ,  B05C11/1002 ,  B05D3/0254 ,  B05D3/06 ,  C23C18/1216 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/02183 ,  H01L21/02186 ,  H01L21/02189 ,  H01L21/02282 ,  H01L21/02345 ,  H01L21/02348 ,  H01L21/32 ,  H01L21/67115 ,  H01L21/6715 ,  H01L21/67248 ,  H01L21/67253 ,  H01L21/68742

Abstract: A substrate processing method includes applying a solution of a compound containing a metal oxide to a surface of a wafer to form a liquid film of the solution on the surface of the wafer, heating the liquid film at a first temperature lower than a crosslinking temperature of the compound, and irradiating the liquid film with energy rays to form a coating film containing the metal oxide on the surface, after heating the liquid film at the first temperature.

公开(公告)号：US20160181133A1

公开(公告)日：2016-06-23

申请号：US14974810

申请日：2015-12-18

Applicant: TOKYO ELECTRON LIMITED

Inventor： Keisuke YOSHIDA ,  Yuzo OHISHI ,  Keisuke SASAKI ,  Shoichi TERADA

IPC: H01L21/67 ,  H01L21/26 ,  H01L21/673

Abstract: A substrate processing apparatus includes a hot plate which supports and heats a substrate, a light source which emits etching energy beam such that the etching energy beam etches the substrate held by the hot plate, a window device which is positioned between the light source and the hot plate and transmits the etching energy beam emitted by the light source toward the substrate, and an adjusting device which adjusts emission amounts of the etching energy beam from portions of the window device toward the substrate such that the adjusting device reduces difference in etching amounts of portions of the substrate.

Abstract translation: 基板处理装置包括支撑和加热基板的热板，发射蚀刻能量束的光源，使得蚀刻能量线蚀刻由热板保持的基板，位于光源和光源之间的窗口装置 将由光源发出的蚀刻能量束朝向基板传递，调整装置调整从窗装置的部分向基板的蚀刻能量束的发射量，使得调整装置减小蚀刻能量束的蚀刻量 基片的一部分。

公开(公告)号：US20240248413A1

公开(公告)日：2024-07-25

申请号：US18416087

申请日：2024-01-18

Applicant: Tokyo Electron Limited

Inventor： Takeshi SHIMOAOKI ,  Arnaud Alain Jean DAUENDORFFER ,  Keisuke YOSHIDA ,  Shinichiro KAWAKAMI ,  Yuya KAMEI ,  Soichiro OKADA ,  Takafumi NIWA

IPC: G03F7/00 ,  G03F7/004 ,  G03F7/16 ,  G03F7/20 ,  H01L21/033

CPC classification number: G03F7/706837 ,  G03F7/161 ,  G03F7/168 ,  G03F7/2002 ,  G03F7/70008 ,  G03F7/70625 ,  G03F7/70633 ,  G03F7/70866 ,  H01L21/0337 ,  G03F7/0042

Abstract: A substrate treatment method includes: developing a substrate which has a coating film of an inorganic resist formed on a base film thereon and has been subjected to an exposure treatment, with a developing solution to form a pattern of the inorganic resist; supplying an embedding solution to the developed substrate to fill a space between adjacent protrusions of the pattern; drying the filled embedding solution to form an embedded film on the substrate; and reducing a thickness of the embedded film by an ultraviolet ray.

公开(公告)号：US20240038533A1

公开(公告)日：2024-02-01

申请号：US18022213

申请日：2021-08-10

Applicant: Tokyo Electron Limited

Inventor： Hiroki TADATOMO ,  Makoto MURAMATSU ,  Kenichi UEDA ,  Arnaud Alain Jean DAUENDORFFER ,  Tomoya ONITSUKA ,  Keisuke YOSHIDA

IPC: H01L21/027 ,  H01L21/311 ,  H01L21/687 ,  H01L21/67

CPC classification number: H01L21/0274 ,  H01L21/31144 ,  H01L21/68742 ,  H01L21/67098

Abstract: The present disclosure provides a substrate processing method and a substrate processing apparatus which are effective in preventing pattern collapse of an uneven pattern. The substrate processing method according to an exemplary embodiment includes replacing a liquid in a recess of a substrate having an uneven pattern of a negative type resist including a metal formed on a surface of the substrate with a solid-state stiffener, and subjecting the substrate to a molecular weight reduction processing that reduces the number of intermolecular bonds contained in the solid-state stiffener while maintaining the solid-state stiffener in a solid state.

公开(公告)号：US20180164689A1

公开(公告)日：2018-06-14

申请号：US15823661

申请日：2017-11-28

Applicant: Tokyo Electron Limited

Inventor： Yohei SANO ,  Shinichiro KAWAKAMI ,  Masashi ENOMOTO ,  Takahiro SHIOZAWA ,  Keisuke YOSHIDA ,  Tomoya ONITSUKA

IPC: G03F7/38 ,  H01L21/027 ,  H01L21/3105 ,  H01L21/67 ,  G03F7/004

CPC classification number: G03F7/38 ,  G03F7/0043 ,  H01L21/0273 ,  H01L21/0274 ,  H01L21/31058 ,  H01L21/67017 ,  H01L21/67103 ,  H01L21/6719

Abstract: A thermal treatment apparatus that performs a thermal treatment on a metal-containing film formed on a substrate, includes: a treatment chamber that houses the substrate; a thermal treatment plate that is provided inside the treatment chamber and mounts the substrate thereon; and a moisture supply unit that supplies moisture to the metal-containing film, wherein at the time of the thermal treatment, moisture is supplied to the metal-containing film of the substrate on the thermal treatment plate and an atmosphere in the treatment chamber is exhausted from a central portion of the treatment chamber.