公开(公告)号：US20130109196A1

公开(公告)日：2013-05-02

申请号：US13661120

申请日：2012-10-26

Applicant: TOKYO ELECTRON LIMITED

Inventor： Atsushi ENDO ,  Satoshi MIZUNAGA ,  Takehiro OTSUKA

IPC: C23C16/46 ,  H01L21/31

CPC classification number: C23C16/4404 ,  C23C16/4405 ,  H01L21/02115 ,  H01L21/02271

Abstract: A method of operating a film forming apparatus includes forming a carbon film on each of surfaces of a plurality of objects held by a holding unit in a processing container and performing a cleaning process with a cleaning gas to remove an unnecessary carbon film adhered on a inside of the processing container, wherein the method further includes, before the forming of the carbon film, forming, on a surface of a member contacting a processing space in the processing container, a tolerant pre-coating film which has a tolerance to the cleaning gas and improves adhesion of the carbon film to the surface of the member. Accordingly, the adhesion of the carbon film is improved, and further, the tolerant pre-coating film remains even when the cleaning process of removing the unnecessary carbon film is performed.

Abstract translation: 一种操作成膜设备的方法包括在由处理容器中的保持单元保持的多个物体的每个表面上形成碳膜，并用清洁气体进行清洁处理以除去附着在内部的不必要的碳膜 所述方法还包括在形成所述碳膜之前，在与所述处理容器中的处理空间接触的构件的表面上形成对所述清洁气体具有耐受性的耐受预涂膜 并提高碳膜对构件表面的粘附性。 因此，提高了碳膜的粘合性，进一步地，即使进行去除不需要的碳膜的清洗工序，耐磨预涂膜仍然残留。

公开(公告)号：US20170125255A1

公开(公告)日：2017-05-04

申请号：US15310840

申请日：2015-06-03

Applicant: Tokyo Electron Limited

Inventor： Akinobu KAKIMOTO ,  Yoshinobu HAYAKAWA ,  Satoshi MIZUNAGA ,  Yasuhiro HAMADA ,  Mitsuhiro OKADA

IPC: H01L21/3065 ,  H01L21/308

Abstract: There is provided a substrate processing system including an etching apparatus configured to supply a gas containing fluorocarbon to generate plasma so as to perform an etching process on a film including silicon formed on a substrate, wherein the etching process is performed by using plasma through a mask formed on the film including silicon, a film forming apparatus configured to supply a gas containing carbon so as to form a film including carbon on the etched film including silicon. The film forming apparatus is provided separately from the etching apparatus, the etching apparatus performing, a first etching step in which the film including silicon is partway etched by using plasma; and a second etching step in which the film including silicon, on which the film including carbon is formed, is further etched by using plasma, the film forming apparatus performing a film forming step in which the film including carbon is formed, without generating plasma, on the film including silicon on which the first etching step has been performed.

公开(公告)号：US20130109195A1

公开(公告)日：2013-05-02

申请号：US13661107

申请日：2012-10-26

Applicant: TOKYO ELECTRON LIMITED

Inventor： Atsushi ENDO ,  Satoshi MIZUNAGA ,  Takehiro OTSUKA

IPC: C23C16/46 ,  H01L21/31

CPC classification number: C23C16/4405 ,  C23C16/4404

Abstract: Provided is a method of operating a film forming apparatus capable of suppressing generation of particles by improving an adhesion of a carbon film to surfaces of members which are formed of a quartz material and contact a processing space in a processing container. The method includes forming a carbon film on each of surfaces of a plurality of objects held by a holding unit in a processing container formed of a quartz material, wherein the method further includes forming an adhesion film to improve the adhesion of the carbon film, on surfaces of members which are formed of a quartz material and contact a processing space in the processing container. Accordingly, the adhesion of the carbon film to the surface of the member formed of a quartz material contacting the processing space in the processing container is improved, thereby suppressing generation of particles.

Abstract translation: 提供了一种操作成膜装置的方法，该成膜装置能够通过改善碳膜与由石英材料形成并与处理容器中的处理空间接触的部件的表面的粘合力来抑制颗粒的产生。 该方法包括在由石英材料形成的处理容器中的由保持单元保持的多个物体的每个表面上形成碳膜，其中所述方法还包括形成粘合膜以改善所述碳膜的粘附性， 由石英材料形成并与处理容器中的处理空间接触的构件的表面。 因此，提高了碳膜对与处理容器内的处理空间接触的石英材料形成的部件的表面的粘附性，抑制了颗粒的产生。

公开(公告)号：US20220415660A1

公开(公告)日：2022-12-29

申请号：US17902918

申请日：2022-09-05

Applicant: Tokyo Electron Limited

Inventor： Akinobu KAKIMOTO ,  Yoshinobu HAYAKAWA ,  Satoshi MIZUNAGA ,  Yasuhiro HAMADA ,  Mitsuhiro OKADA

IPC: H01L21/3065 ,  H01J37/32 ,  H01L21/308 ,  H01L21/311 ,  H01L21/67

Abstract: A processing apparatus includes a chamber having a gas inlet and a gas outlet; a plasma generator; and a controller configured to cause: (a) etching a silicon-containing film to a first depth with a first plasma in the chamber, thereby forming a recess in the silicon-containing film; (b) forming a protection film on a side wall of the recess with a second plasma in the chamber, the protection film having a first thickness at an upper portion of the recess and a second thickness at a lower portion of the recess, the second thickness being smaller than the first thickness; and (c) etching the silicon-containing film to a second depth with the third plasma in the chamber, the second depth being greater than the first depth.

公开(公告)号：US20160251755A1

公开(公告)日：2016-09-01

申请号：US15045792

申请日：2016-02-17

Applicant: TOKYO ELECTRON LIMITED

Inventor： Masayuki KITAMURA ,  Satoshi MIZUNAGA ,  Akira SHIMIZU ,  Akinobu KAKIMOTO

IPC: C23C16/02 ,  C23C16/26

CPC classification number: C23C16/0272 ,  C23C16/26

Abstract: A method for forming a carbon film on a process surface to be processed of a workpiece includes forming a seed layer on the process surface of the workpiece by supplying an aminosilane-based gas, an aminosilane-based gas having high-order equal to or higher than that of aminodisilane, or a nitrogen-containing heterocyclic compound gas onto the process surface; and forming the carbon film on the process surface on which the seed layer is formed by supplying a hydrocarbon-based carbon source gas and a thermal decomposition temperature lowering gas for lowering a thermal decomposition temperature of the hydrocarbon-based carbon source gas onto the process surface on which the seed layer is obtained, and by setting a film formation temperature to be lower than the thermal decomposition temperature of the hydrocarbon-based carbon source gas.

Abstract translation: 在工件的加工面上形成碳膜的方法包括：通过供给氨基硅烷系气体，高等级以上的氨基硅烷系气体，在工件的加工面上形成种子层 或氨基二硅烷，或含氮杂环化合物气体加到工艺表面上; 以及通过提供烃类碳源气体和用于将烃类碳源气体的热分解温度降低到工艺表面上的热分解降温气体，在其上形成种子层的工艺表面上形成碳膜 在其上获得种子层，并且通过将成膜温度设定为低于烃类碳源气体的热分解温度。

公开(公告)号：US20140011368A1

公开(公告)日：2014-01-09

申请号：US13937902

申请日：2013-07-09

Applicant: Tokyo Electron Limited

Inventor： Tomoyuki OBU ,  Satoshi MIZUNAGA ,  Takehiro OTSUKA

IPC: H01L21/02

CPC classification number: H01L21/02304 ,  C23C16/0272 ,  C23C16/26 ,  H01L21/02115 ,  H01L21/02271

Abstract: According to an embodiment of present disclosure, a method of forming a carbon film on a substrate to be processed is provided. The method includes loading a substrate to be processed with a carbon film formed thereon into a processing chamber of a film forming apparatus (Process 1), and thermally decomposing a hydrocarbon-based carbon source gas in the processing chamber to form a carbon film on the substrate to be processed (Process 2). In Process 2, a film forming temperature of the carbon film is set to a temperature less than a thermal decomposition temperature of a simple substance of the hydrocarbon-based carbon source gas without plasma assistance, the hydrocarbon-based carbon source gas and a thermal decomposition temperature drop gas containing a halogen element are introduced into the processing chamber, and a non-plasma thermal CVD method is performed.

Abstract translation: 根据本公开的实施例，提供了一种在待处理的基板上形成碳膜的方法。 该方法包括将其上形成有碳膜的待处理基板加载到成膜装置的处理室（方法1）中，并且在处理室中热分解烃类碳源气体以在其上形成碳膜 待处理衬底（工艺2）。 在方法2中，将碳膜的成膜温度设定为低于无等离子体辅助的烃系碳源气体的单体的热分解温度的温度，烃类碳源气体和热分解 将含有卤素元素的降温气体引入到处理室中，进行非等离子体热CVD法。

公开(公告)号：US20240093371A1

公开(公告)日：2024-03-21

申请号：US18244532

申请日：2023-09-11

Applicant: Tokyo Electron Limited

Inventor： Hiroaki DEWA ,  Satoshi MIZUNAGA ,  Naohide ITO

IPC: C23C16/52 ,  C23C16/448 ,  C23C16/455

CPC classification number: C23C16/52 ,  C23C16/448 ,  C23C16/45561

Abstract: Provided is a method of supplying a liquid raw material to a gas supply device. The gas supply device includes: a storage tank that stores the liquid raw material; a heating unit that heats the liquid raw material to generate a raw material gas; a level detecting unit that detects a liquid surface level of the liquid raw material stored in the storage tank; a gas inlet and a gas outlet provided in the storage tank; and a raw material inlet provided in the storage tank. The method includes: determining whether the liquid surface level of the liquid raw material is equal to or lower than a supply target level; and repeating supply of a specified amount of liquid raw material to the storage tank a specified number of times when the liquid surface level of the liquid raw material is equal to or lower than the supply target level.

公开(公告)号：US20220415661A1

公开(公告)日：2022-12-29

申请号：US17902919

申请日：2022-09-05

Applicant: Tokyo Electron Limited

Inventor： Akinobu KAKIMOTO ,  Yoshinobu HAYAKAWA ,  Satoshi MIZUNAGA ,  Yasuhiro HAMADA ,  Mitsuhiro OKADA

IPC: H01L21/3065 ,  H01L21/308 ,  H01J37/32 ,  H01L21/311 ,  H01L21/67

Abstract: A plasma processing apparatus includes a chamber having a gas inlet and a gas outlet; a plasma generator; and a controller configured to cause: (a) providing a substrate including a silicon-containing film and a mask formed on the film; (b) etching the silicon-containing film through the mask to the first depth, thereby forming a recess in the silicon-containing film; (c) forming a protection film at least on the mask and a side wall of the recess formed on the silicon-containing film after (a); and (d) etching the silicon containing film through the mask to a second depth, the second depth being greater than the first depth.

公开(公告)号：US20200035497A1

公开(公告)日：2020-01-30

申请号：US16596056

申请日：2019-10-08

Applicant: Tokyo Electron Limited

Inventor： Akinobu KAKIMOTO ,  Yoshinobu HAYAKAWA ,  Satoshi MIZUNAGA ,  Yasuhiro HAMADA ,  Mitsuhiro OKADA

IPC: H01L21/3065 ,  H01J37/32 ,  H01L21/311 ,  H01L21/308

Abstract: A processing apparatus includes a chamber having a gas inlet and a gas outlet; a plasma generator; and a controller configured to cause: (a) etching a silicon-containing film to a first depth with a first plasma in the chamber, thereby forming a recess in the silicon-containing film; (b) forming a protection film on a side wall of the recess with a second plasma in the chamber, the protection film having a first thickness at an upper portion of the recess and a second thickness at a lower portion of the recess, the second thickness being smaller than the first thickness; and (c) etching the silicon-containing film to a second depth with the third plasma in the chamber, the second depth being greater than the first depth.

公开(公告)号：US20200035496A1

公开(公告)日：2020-01-30

申请号：US16595995

申请日：2019-10-08

Applicant: Tokyo Electron Limited

Inventor： Akinobu KAKIMOTO ,  Yoshinobu HAYAKAWA ,  Satoshi MIZUNAGA ,  Yasuhiro HAMADA ,  Mitsuhiro OKADA

IPC: H01L21/3065 ,  H01J37/32 ,  H01L21/311 ,  H01L21/308

Abstract: A plasma processing apparatus includes a chamber having a gas inlet and a gas outlet; a plasma generator; and a controller configured to cause: (a) providing a substrate including a silicon-containing film and a mask formed on the film; (b) etching the silicon-containing film through the mask to the first depth, thereby forming a recess in the silicon-containing film; (c) forming a protection film at least on the mask and a side wall of the recess formed on the silicon-containing film after (a); and (d) etching the silicon containing film through the mask to a second depth, the second depth being greater than the first depth.