公开(公告)号：US20240248413A1

公开(公告)日：2024-07-25

申请号：US18416087

申请日：2024-01-18

Applicant: Tokyo Electron Limited

Inventor： Takeshi SHIMOAOKI ,  Arnaud Alain Jean DAUENDORFFER ,  Keisuke YOSHIDA ,  Shinichiro KAWAKAMI ,  Yuya KAMEI ,  Soichiro OKADA ,  Takafumi NIWA

IPC: G03F7/00 ,  G03F7/004 ,  G03F7/16 ,  G03F7/20 ,  H01L21/033

CPC classification number: G03F7/706837 ,  G03F7/161 ,  G03F7/168 ,  G03F7/2002 ,  G03F7/70008 ,  G03F7/70625 ,  G03F7/70633 ,  G03F7/70866 ,  H01L21/0337 ,  G03F7/0042

Abstract: A substrate treatment method includes: developing a substrate which has a coating film of an inorganic resist formed on a base film thereon and has been subjected to an exposure treatment, with a developing solution to form a pattern of the inorganic resist; supplying an embedding solution to the developed substrate to fill a space between adjacent protrusions of the pattern; drying the filled embedding solution to form an embedded film on the substrate; and reducing a thickness of the embedded film by an ultraviolet ray.

公开(公告)号：US20220197159A1

公开(公告)日：2022-06-23

申请号：US17544058

申请日：2021-12-07

Applicant: Tokyo Electron Limited

Inventor： Yuya KAMEI

IPC: G03F7/20

Abstract: A developing method of performing a developing treatment on a substrate includes: supplying a developing solution containing an organic solvent to the substrate having a metal-containing coating film exposed into a predetermined pattern; and supplying a cleaning solution containing an organic solvent to the substrate supplied with the developing solution, wherein the cleaning solution is lower in solubility of the metal-containing coating film than the developing solution.