公开(公告)号：US20180095370A1

公开(公告)日：2018-04-05

申请号：US15720891

申请日：2017-09-29

Applicant: Tokyo Electron Limited

Inventor： Hideaki KASHIWAGI ,  Takafumi NIWA ,  Norihisa KOGA

IPC: G03F7/20 ,  G03F7/16 ,  H01L21/67 ,  G03F7/40 ,  H01L21/027

CPC classification number: G03F7/70991 ,  G03F7/168 ,  G03F7/2022 ,  G03F7/40 ,  H01L21/027 ,  H01L21/0274 ,  H01L21/67178 ,  H01L21/67225 ,  H01L21/67248 ,  H01L21/67253 ,  H01L22/20

Abstract: An auxiliary exposure apparatus is for performing auxiliary exposure of applying light of a predetermined wavelength from a laser light source to a resist film on a wafer, separately from exposure processing of transferring a pattern of a mask to the resist film applied on the wafer, and includes: a first total reflection mirror configured to reflect the light from the laser light source toward the wafer; and an imaging device including a light receiving part configured to receive light after reflected by the wafer.

公开(公告)号：US20180019112A1

公开(公告)日：2018-01-18

申请号：US15716663

申请日：2017-09-27

Applicant: TOKYO ELECTRON LIMITED

Inventor： Akiko KAI ,  Takafumi NIWA ,  Shogo TAKAHASHI ,  Hiroshi NISHIHATA ,  Yuichi TERASHITA ,  Teruhiko KODAMA

IPC: H01L21/02 ,  H01L21/033 ,  G03F7/30 ,  H01L21/311 ,  H01L21/687 ,  H01L21/67

CPC classification number: H01L21/67051 ,  G03F7/3021 ,  H01L21/0206 ,  H01L21/0337 ,  H01L21/31133 ,  H01L21/31144 ,  H01L21/6708 ,  H01L21/68742

Abstract: A liquid processing apparatus for liquid-processing a substrate includes a substrate holding device that rotates a substrate in horizontal position, a nozzle holding device holding processing liquid and gas nozzles, the liquid nozzle discharging processing liquid from a discharge port such that the liquid is discharged obliquely to surface of the substrate, the gas nozzle discharging gas perpendicularly to the surface of the substrate, a moving device that moves the nozzle device with respect to the surface of the substrate, and a control device including circuitry that controls the nozzle, substrate and moving devices such that while the substrate is rotated, the liquid is discharged to peripheral portion toward downstream side in rotation direction and along tangential direction of the substrate and gas is discharged from the gas nozzle toward position adjacent to liquid landing position of the liquid on the surface and is on center side of the substrate.

公开(公告)号：US20240248413A1

公开(公告)日：2024-07-25

申请号：US18416087

申请日：2024-01-18

Applicant: Tokyo Electron Limited

Inventor： Takeshi SHIMOAOKI ,  Arnaud Alain Jean DAUENDORFFER ,  Keisuke YOSHIDA ,  Shinichiro KAWAKAMI ,  Yuya KAMEI ,  Soichiro OKADA ,  Takafumi NIWA

IPC: G03F7/00 ,  G03F7/004 ,  G03F7/16 ,  G03F7/20 ,  H01L21/033

CPC classification number: G03F7/706837 ,  G03F7/161 ,  G03F7/168 ,  G03F7/2002 ,  G03F7/70008 ,  G03F7/70625 ,  G03F7/70633 ,  G03F7/70866 ,  H01L21/0337 ,  G03F7/0042

Abstract: A substrate treatment method includes: developing a substrate which has a coating film of an inorganic resist formed on a base film thereon and has been subjected to an exposure treatment, with a developing solution to form a pattern of the inorganic resist; supplying an embedding solution to the developed substrate to fill a space between adjacent protrusions of the pattern; drying the filled embedding solution to form an embedded film on the substrate; and reducing a thickness of the embedded film by an ultraviolet ray.

公开(公告)号：US20180350594A1

公开(公告)日：2018-12-06

申请号：US16055975

申请日：2018-08-06

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kousuke YOSHIHARA ,  Takafumi NIWA

IPC: H01L21/02 ,  H01L21/67 ,  B05C13/00 ,  G03F7/16 ,  B05C9/12 ,  H01L21/687 ,  B05C11/08

Abstract: A method of forming a coating film includes horizontally supporting a substrate, supplying a coating solution to a central portion of the substrate and spreading the coating solution by a centrifugal force by rotating the substrate at a first rotational speed, decreasing a speed of the substrate from the first rotational speed toward a second rotational speed and rotating the substrate at the second rotational speed to make a surface of a liquid film of the coating solution even, supplying a gas to a surface of the substrate when the substrate is rotated at the second rotational speed to reduce fluidity of the coating solution, and drying the surface of the substrate by rotating the substrate at a third rotational speed faster than the second rotational speed.

公开(公告)号：US20170140929A1

公开(公告)日：2017-05-18

申请号：US15350150

申请日：2016-11-14

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kousuke YOSHIHARA ,  Takafumi NIWA

IPC: H01L21/02 ,  B05C13/00 ,  B05C9/12 ,  H01L21/687 ,  B05C11/08

CPC classification number: H01L21/02282 ,  B05C9/12 ,  B05C11/08 ,  B05C13/00 ,  G03F7/162 ,  G03F7/168 ,  H01L21/67028 ,  H01L21/67109 ,  H01L21/6715 ,  H01L21/67253 ,  H01L21/68764

Abstract: A method of forming a coating film includes horizontally supporting a substrate, supplying a coating solution to a central portion of the substrate and spreading the coating solution by a centrifugal force by rotating the substrate at a first rotational speed, decreasing a speed of the substrate from the first rotational speed toward a second rotational speed and rotating the substrate at the second rotational speed to make a surface of a liquid film of the coating solution even, supplying a gas to a surface of the substrate when the substrate is rotated at the second rotational speed to reduce fluidity of the coating solution, and drying the surface of the substrate by rotating the substrate at a third rotational speed faster than the second rotational speed.