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    INSULATED WIRE
    1.
    发明申请
    INSULATED WIRE 有权
    绝缘线

    公开(公告)号：US20110192632A1

    公开(公告)日：2011-08-11

    申请号：US12870329

    申请日：2010-08-27

    申请人： Tomiya ABE ,  Takanori Yamazaki ,  Kiyoshi Watanabe ,  Hideyuki Kikuchi ,  Takahiko Hanada ,  Daisuke Hino

    发明人： Tomiya ABE ,  Takanori Yamazaki ,  Kiyoshi Watanabe ,  Hideyuki Kikuchi ,  Takahiko Hanada ,  Daisuke Hino

    IPC分类号： H01B7/00

    CPC分类号： H01B3/301 ,  H01B3/305 ,  H01B3/441 ,  H01B3/445

    摘要： There is provided an insulated wire having an insulation film composed of a plurality of layers provided on a conductor, in which: the insulation film includes a first film layer and a second film layer; the first film layer is made of a first resin composition formed by graft-polymerizing a graft compound with an ethylene-tetrafluoroethylene copolymer and is provided on a circumference of the conductor; and the second film layer is made of a second resin composition being a polymer alloy made of a polyphenylene sulfide resin and a polyamide resin, or being a polymer alloy made of a polyether ether ketone resin and a polyamide resin and is provided on a circumference of the first film layer.

    摘要翻译： 提供了一种绝缘线，其具有由设置在导体上的多个层构成的绝缘膜，其中：所述绝缘膜包括第一膜层和第二膜层; 第一膜层由通过接枝聚合接枝化合物与乙烯 - 四氟乙烯共聚物形成的第一树脂组合物制成，并且设置在导体的圆周上; 并且第二膜层由作为由聚苯硫醚树脂和聚酰胺树脂制成的聚合物合金的第二树脂组合物或由聚醚醚酮树脂和聚酰胺树脂制成的聚合物合金制成，并且设置在 第一个电影层。

    Insulated wire
    2.
    发明授权
    Insulated wire 有权
    绝缘电线

    公开(公告)号：US08569628B2

    公开(公告)日：2013-10-29

    申请号：US12870329

    申请日：2010-08-27

    申请人： Tomiya Abe ,  Takanori Yamazaki ,  Kiyoshi Watanabe ,  Hideyuki Kikuchi ,  Takahiko Hanada ,  Daisuke Hino

    发明人： Tomiya Abe ,  Takanori Yamazaki ,  Kiyoshi Watanabe ,  Hideyuki Kikuchi ,  Takahiko Hanada ,  Daisuke Hino

    IPC分类号： H01B7/00

    CPC分类号： H01B3/301 ,  H01B3/305 ,  H01B3/441 ,  H01B3/445

    摘要： There is provided an insulated wire having an insulation film composed of a plurality of layers provided on a conductor, in which: the insulation film includes a first film layer and a second film layer; the first film layer is made of a first resin composition formed by graft-polymerizing a graft compound with an ethylene-tetrafluoroethylene copolymer and is provided on a circumference of the conductor; and the second film layer is made of a second resin composition being a polymer alloy made of a polyphenylene sulfide resin and a polyamide resin, or being a polymer alloy made of a polyether ether ketone resin and a polyamide resin and is provided on a circumference of the first film layer.

    摘要翻译： 提供了一种绝缘线，其具有由设置在导体上的多个层构成的绝缘膜，其中：所述绝缘膜包括第一膜层和第二膜层; 第一膜层由通过接枝聚合接枝化合物与乙烯 - 四氟乙烯共聚物形成的第一树脂组合物制成，并且设置在导体的圆周上; 并且第二膜层由作为由聚苯硫醚树脂和聚酰胺树脂制成的聚合物合金的第二树脂组合物或由聚醚醚酮树脂和聚酰胺树脂制成的聚合物合金制成，并且设置在 第一个电影层。

    Insulated wire
    3.
    发明授权
    Insulated wire 有权
    绝缘电线

    公开(公告)号：US08809684B2

    公开(公告)日：2014-08-19

    申请号：US13075286

    申请日：2011-03-30

    申请人： Takanori Yamazaki ,  Kiyoshi Watanabe ,  Junichi Abe ,  Hideyuki Kikuchi ,  Daisuke Hino

    发明人： Takanori Yamazaki ,  Kiyoshi Watanabe ,  Junichi Abe ,  Hideyuki Kikuchi ,  Daisuke Hino

    IPC分类号： H01B7/00

    CPC分类号： H01B3/305 ,  H01B3/301

    摘要： There is provided an insulated wire including a wire conductor and an insulation coating formed on the wire conductor by extrusion coating a resin composition. The resin composition is a mixture of a polyphenylene sulfide-based resin (A) and a polyamide-based resin (B), in which a ratio of parts by mass of the resin (B) to that of the resin (A), i.e. (B)/(A), is not less than 5/95 and not more than 30/70.

    摘要翻译： 提供了一种绝缘电线，其包括线导体和通过挤出涂覆树脂组合物形成在导线导体上的绝缘涂层。 树脂组合物是聚苯硫醚类树脂（A）和聚酰胺类树脂（B）的混合物，其中树脂（B）与树脂（A）的质量份的比例，即 （B）/（A），不小于5/95且不大于30/70。

    Insulated wire
    4.
    发明授权
    Insulated wire 有权
    绝缘电线

    公开(公告)号：US08741441B2

    公开(公告)日：2014-06-03

    申请号：US12829528

    申请日：2010-07-02

    申请人： Yuki Honda ,  Tomiya Abe ,  Hideyuki Kikuchi ,  Daisuke Hino

    发明人： Yuki Honda ,  Tomiya Abe ,  Hideyuki Kikuchi ,  Daisuke Hino

    IPC分类号： B32B15/08 ,  C08L79/08 ,  H01B17/60

    CPC分类号： C09D179/08 ,  H01B3/305 ,  Y10T428/31681 ,  Y10T428/31721

    摘要： An insulated wire includes a conductor, and an insulating covering layer formed on a periphery of the conductor and including two or more insulating coatings. The insulating coatings include a polyamide-imide resin insulating material represented by chemical formula 1: where R indicates a divalent aromatic diamine including three or more aromatic rings. The insulating coatings are formed by applying and baking the polyamide-imide resin insulating material, and the polyamide-imide resin insulating material is obtained by reacting an imide group containing dicarboxylic acid with a diisocyanate, the imide group containing dicarboxylic acid being obtained by dehydration reaction of a diamine comprising a divalent aromatic diamine including three or more aromatic rings with an acid using an azeotropic solvent.

    摘要翻译： 绝缘线包括导体和形成在导体的周边上并包括两个或更多个绝缘涂层的绝缘覆盖层。 绝缘涂层包括由化学式1表示的聚酰胺酰亚胺树脂绝缘材料：其中R表示包含三个或更多个芳环的二价芳族二胺。 通过涂布和烘烤聚酰胺酰亚胺树脂绝缘材料形成绝缘涂层，并且通过使含有二羧酸的酰亚胺基与二异氰酸酯反应获得聚酰胺 - 酰亚胺树脂绝缘材料，通过脱水反应得到含有二羧酸的酰亚胺基 的二胺，其包含使用共沸溶剂的含有三个或更多个芳族环的二价芳族二胺与酸。

    Epitaxial substrate for electronic device, in which current flows in lateral direction and method of producing the same
    8.
    发明授权
    Epitaxial substrate for electronic device, in which current flows in lateral direction and method of producing the same 有权
    电流装置的外延基板，其中电流沿横向流动，其制造方法

    公开(公告)号：US08710489B2

    公开(公告)日：2014-04-29

    申请号：US13384006

    申请日：2010-07-13

    申请人： Tetsuya Ikuta ,  Daisuke Hino ,  Ryo Sakamoto ,  Tomohiko Shibata

    发明人： Tetsuya Ikuta ,  Daisuke Hino ,  Ryo Sakamoto ,  Tomohiko Shibata

    IPC分类号： H01L29/06 ,  H01L31/00

    CPC分类号： H01L29/7787 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L21/02658 ,  H01L22/14 ,  H01L29/155 ,  H01L29/2003 ,  H01L29/66462

    摘要： To provide an epitaxial substrate for electronic devices, in which current flows in a lateral direction, which enables accurate measurement of the sheet resistance of HEMTs without contact, and to provide a method of efficiently producing the epitaxial substrate for electronic devices, the method characteristically includes the steps of forming a barrier layer against impurity diffusion on one surface of a high-resistance Si-single crystal substrate, forming a buffer as an insulating layer on the other surface of the high-resistance Si-single crystal substrate, producing an epitaxial substrate by epitaxially growing a plurality of III-nitride layers on the buffer to form a main laminate, and measuring resistance of the main laminate of the epitaxial substrate without contact.

    摘要翻译： 为了提供一种电子器件的外延衬底，其中电流沿横向流动，这使得能够精确地测量HEMT的薄层电阻而不接触，并且提供了一种有效地制造用于电子器件的外延衬底的方法，该方法的特征在于包括 在高电阻Si单晶衬底的一个表面上形成抵抗杂质扩散的阻挡层的步骤，在高电阻Si-单晶衬底的另一个表面上形成作为绝缘层的缓冲层，产生外延衬底 通过在缓冲器上外延生长多个III族氮化物层以形成主层压板，并测量外延衬底的主层压体的电阻而不接触。

    Method for Producing 2-Hydroxyester Compounds
    9.
    发明申请
    Method for Producing 2-Hydroxyester Compounds 有权
    生产2-羟基酯化合物的方法

    公开(公告)号：US20080214861A1

    公开(公告)日：2008-09-04

    申请号：US11997856

    申请日：2006-08-08

    申请人： Ichiro Kozono ,  Naoki Fujiwara ,  Daisuke Hino

    发明人： Ichiro Kozono ,  Naoki Fujiwara ,  Daisuke Hino

    IPC分类号： C07C67/22

    CPC分类号： C07C67/22 ,  C07C67/58 ,  C07C69/734 ,  C07C69/675

    摘要： A simple and easy-to-use method for producing a 2-hydroxyester compound using a cyanohydrin compound, as a raw material, is provided. A method for producing a 2-hydroxyester compound represented by the general formula (1) (provided that ethyl 2-hydroxy-4-phenylbutyrate is excluded), wherein an acid is introduced into a mixture of a cyanohydrin compound represented by the general formula (2), an alcohol, an organic solvent and water:(Chemical Formula 1) R1—CH(OH)—COOR2   (1) R1—CH(OH)(CN)   (2) wherein, R1 is a hydrogen atom, a substituted or unsubstituted aliphatic hydrocarbon group having 1 to 12 carbon atoms, which may contain an oxygen atom, a sulfur atom or a nitrogen atom, a substituted or unsubstituted alicyclic hydrocarbon group having 3 to 12 carbon atoms, which may contain an oxygen atom, a sulfur atom or a nitrogen atom, and a substituted or unsubstituted aryl group or aralkyl group having 3 to 14 carbon atoms, which may contain an oxygen atom, a sulfur atom or a nitrogen atom; and R2 is an alkyl group having 1 to 12 carbon atoms, which may contain an oxygen atom, a sulfur atom or a nitrogen atom.

    摘要翻译： 提供了使用氰醇化合物作为原料制备2-羟基酯化合物的简单且易于使用的方法。 制备由通式（1）表示的2-羟基酯化合物的方法（不包括2-羟基-4-苯基丁酸乙酯），其中将酸引入由通式（2）表示的羟腈化合物的混合物中 2），醇，有机溶剂和水：（化学式1）<？in-line-formula description =“In-line formula”end =“lead”？> R 1 -CH （OH）-COOR 2（1）<？in-line-formula description =“In-line Formulas”end =“tail”？> <？in-line-formula description =“In- 线型公式“end =”lead“？> R <1> -CH（OH）（CN）（2）<？in-line-formula description =”In-line Formulas“end =”tail“ 其中，R 1是氢原子，取代或未取代的碳原子数1〜12的脂肪族烃基，可以含有氧原子，硫原子或氮原子，取代或未取代的 可以含有氧原子，硫原子或氮原子的碳原子数3〜12的未取代的脂环式烃基 d可以含有氧原子，硫原子或氮原子的取代或未取代的具有3〜14个碳原子的芳基或芳烷基; R 2是具有1〜12个碳原子的烷基，可以含有氧原子，硫原子或氮原子。

    Epitaxial growth substrate, semiconductor device, and epitaxial growth method
    10.
    发明授权
    Epitaxial growth substrate, semiconductor device, and epitaxial growth method 有权
    外延生长衬底，半导体器件和外延生长法

    公开(公告)号：US09006865B2

    公开(公告)日：2015-04-14

    申请号：US13703943

    申请日：2011-06-24

    申请人： Tetsuya Ikuta ,  Daisuke Hino ,  Tomohiko Shibata

    发明人： Tetsuya Ikuta ,  Daisuke Hino ,  Tomohiko Shibata

    IPC分类号： H01L29/20 ,  H01L29/12 ,  C30B25/18 ,  C30B29/40 ,  H01L21/02 ,  H01L29/10 ,  H01L29/778

    CPC分类号： H01L29/12 ,  C30B25/18 ,  C30B29/403 ,  H01L21/02381 ,  H01L21/0243 ,  H01L21/02463 ,  H01L21/02546 ,  H01L21/02658 ,  H01L29/1075 ,  H01L29/2003 ,  H01L29/7786

    摘要： In heteroepitaxially growing a group-III nitride semiconductor on a Si single crystal substrate, the occurrence of cracks initiating in the wafer edge portion can be suppressed. Region A is an outermost peripheral portion outside the principal surface, being a bevel portion tapered. Regions B and C are on the same plane (the principal surface), region B (mirror-surface portion) being the center portion of the principal surface, and region C a region in the principal surface edge portion surrounding region B. The principal surface has a plane orientation, and in region B, is mirror-surface-finished. Region B occupies most of the principal surface of this Si single crystal substrate, and a semiconductor device is manufactured therein. Region C (surface-roughened portion) has a plane orientation as with region B, however, region B is mirror-surface-finished, whereas region C is surface-roughened.

    摘要翻译： 在Si单晶衬底上异质外延生长III族氮化物半导体时，可以抑制晶片边缘部分发生裂纹的发生。 区域A是主表面之外的最外围部分，是锥形部分的斜面部分。 区域B和C位于主面的同一平面（主面），作为主面的中心部的区域B（镜面部），区域C是主表面边缘部周围区域B的区域。主面 具有平面取向，并且在区域B中是镜面加工的。 区域B占据该Si单晶衬底的主要表面的大部分，并且在其中制造半导体器件。 区域C（表面粗糙化部分）具有与区域B一样的平面取向，但是区域B是镜面精加工的，而区域C被表面粗糙化。