公开(公告)号：US4982138A

公开(公告)日：1991-01-01

申请号：US277640

申请日：1988-11-29

申请人： Nobuo Fujiwara ,  Kenji Kawai ,  Moriaki Akazawa ,  Teruo Shibano ,  Tomoaki Ishida ,  Kyusaku Nishioka

发明人： Nobuo Fujiwara ,  Kenji Kawai ,  Moriaki Akazawa ,  Teruo Shibano ,  Tomoaki Ishida ,  Kyusaku Nishioka

IPC分类号： H01L21/302 ,  H01J37/32 ,  H01L21/205 ,  H01L21/3065 ,  H01L21/31 ,  H05H1/46

CPC分类号： H01J37/32678

摘要： A wafer treating device utilizing a plasma generated by a gas discharge caused by electron cyclotron resonance (ECR) includes a wafer treating chamber and a plasma generating chamber, a microwave supply for supplying microwave energy to the plasma generating chamber, and an electromagnetic coil which surrounds the plasma generating chamber to produce a minimum B-field therein. A plasma generated in the plasma generating chamber by electron cyclotron resonance is confined stably therein by the minimum B-field produced by the coil. Thus, the density and stability of the plasma in the plasma generating chamber are enhanced. The plasma in the plasma generating chamber is conveyed to a wafer in the wafer treating chamber along the diverging lines of a magnetic force. Examples of the minimum B-field producing coil include Ioffe bars, a baseball coil and an Yin-yang coil.

摘要翻译： 利用由电子回旋共振（ECR）引起的气体放电产生的等离子体的晶片处理装置包括晶片处理室和等离子体发生室，用于向等离子体发生室供给微波能量的微波电源和围绕 该等离子体产生室在其中产生最小的B场。 通过电子回旋共振在等离子体发生室中产生的等离子体由线圈产生的最小B场稳定地限制在其中。 因此，提高等离子体发生室中的等离子体的密度和稳定性。 等离子体发生室中的等离子体沿着磁力的发散线被输送到晶片处理室中的晶片。 最小B场产生线圈的实例包括Ioffe棒，棒球线圈和阴阳线圈。

公开(公告)号：US4915979A

公开(公告)日：1990-04-10

申请号：US279016

申请日：1988-12-02

申请人： Tomoaki Ishida ,  Nobuo Fujiwara ,  Kyusaku Nishioka ,  Moriaki Akazawa ,  Teruo Shibano ,  Kenji Kawai

发明人： Tomoaki Ishida ,  Nobuo Fujiwara ,  Kyusaku Nishioka ,  Moriaki Akazawa ,  Teruo Shibano ,  Kenji Kawai

IPC分类号： H01L21/302 ,  H01J37/32 ,  H01L21/205 ,  H01L21/3065 ,  H01L21/31

CPC分类号： H01J37/32357

摘要： A semiconductor wafer treating device utilizing a gas plasma generated by electron cyclotron resonance (ECR) is disclosed whch comprises a wafer treating chamber and a plasma generating chamber communicating with the wafer treating chamber. Microwave energy at a frequency of not more than 2 GHz and not less than 100 MHz is supplied to the plasma generating chamber which is surrounded by a solenoidal coil and produces a magnetic field in the plasma generating chamber and in the wafer treating chamber to produce ECR and transport the plasma generated by ECR to the wafer. Thus, the Larmor radius of the electrons moving in helical paths in electron cyclotron resonance in the plasma generating chamber is optimized to make the plasma spatially uniform. Consequently, the uniformity of the treatment on the wafer is improved.

摘要翻译： 公开了一种利用电子回旋共振（ECR）产生的气体等离子体的半导体晶片处理装置，包括晶片处理室和与晶片处理室连通的等离子体产生室。 将频率不大于2GHz且不小于100MHz的微波能量提供给由螺线管线圈包围的等离子体发生室，并在等离子体发生室和晶片处理室中产生磁场以产生ECR 并将由ECR产生的等离子体输送到晶片。 因此，优化了在等离子体发生室中的电子回旋共振中在螺旋路径中移动的电子的拉莫半径使得等离子体在空间上均匀。 因此，提高了晶片上的处理的均匀性。

公开(公告)号：US4877509A

公开(公告)日：1989-10-31

申请号：US269688

申请日：1988-11-10

申请人： Toshiaki Ogawa ,  Nobuo Fujiwara ,  Kenji Kawai ,  Teruo Shibano ,  Hiroshi Morita ,  Kyusaku Nishioka

发明人： Toshiaki Ogawa ,  Nobuo Fujiwara ,  Kenji Kawai ,  Teruo Shibano ,  Hiroshi Morita ,  Kyusaku Nishioka

IPC分类号： H01L21/302 ,  C23C16/511 ,  H01J37/32 ,  H01L21/205 ,  H01L21/3065 ,  H01L21/31

CPC分类号： H01J37/32293 ,  C23C16/511 ,  H01J37/32192 ,  H01J37/32678

摘要： An apparatus for treating semiconductor wafers utilizing a plasma generated by electron cyclotron resonance (ECR) is disclosed in which a microwave is supplied to a plasma generating chamber via a rectangular waveguide, a rectangular-to-circular microwave converter, and a circular polarization converter. The polarization converter may comprise a phase shift plate of a dielectric material or an electrically conductive material disposed in a circular waveguide in the form of a metallic cylinder. The polarization converter transforms a circular TE.sub.11 mode microwave supplied from the rectangular-to-circular microwave converter to a circularly polarized one by rotating the direction of the electric field of the microwave in the TE.sub.11 mode one complete turn in one period of the microwave. Thus, the electric field strength of the microwave supplied to the plasma generating chamber is averaged over the time along the circumferential direction in the plasma generating chamber to make the density of plasma generation therein spatially uniform. The spatially uniformly distributed plasma generated in the plasma generating chamber is conveyed to the wafer in the wafer treating chamber to effect a treatment of the wafer.

摘要翻译： 公开了一种利用电子回旋共振（ECR）产生的等离子体处理半导体晶片的装置，其中通过矩形波导，矩形到圆形微波转换器和圆偏振转换器将微波提供给等离子体发生室。 偏振转换器可以包括介电材料的相移板或设置在金属圆筒形状的圆形波导中的导电材料。 在微波的一个周期内，通过在TE11模式一周内旋转微波的电场方向，将由矩形到圆形的微波转换器提供的循环TE11模式的微波变换成圆偏振的微波。 因此，供给到等离子体发生室的微波的电场强度在等离子体发生室中沿着圆周方向的时间平均化，使得其中等离子体产生的密度在空间上均匀。 在等离子体发生室中产生的空间均匀分布的等离子体被输送到晶片处理室中的晶片，以对晶片进行处理。

公开(公告)号：US5304775A

公开(公告)日：1994-04-19

申请号：US710988

申请日：1991-06-06

申请人： Nobuo Fujiwara ,  Kyusaku Nishioka ,  Teruo Shibano

发明人： Nobuo Fujiwara ,  Kyusaku Nishioka ,  Teruo Shibano

IPC分类号： H01L21/3065 ,  H01L21/311 ,  H01L21/3213 ,  B23K9/00

CPC分类号： H01L21/31111 ,  H01L21/3065 ,  H01L21/32136 ,  H01L21/32137

摘要： Fine processing is performed by using gas which contains halogen in such a manner that halogen ions contributing to an etching process and ions of a light element, the mass of which is smaller than that of the halogen ion and which does not react with a semiconductor wafer, are present in a plasma generated due to electron cyclotron resonance. Since energy in the plasma is in inverse proportion to the mass, the disorder motion of the halogen ions having large mass can be restrained. Therefore, the halogen ions can be made perpendicularly incident upon the surface of the semiconductor wafer. Consequently, etching process revealing high anisotropy can be performed.

摘要翻译： 通过使用含有卤素的气体，使得有助于蚀刻工艺的卤素离子和轻质元素的离子质量小于卤素离子的离子并且不与半导体晶片反应来进行精细加工 存在于由于电子回旋共振而产生的等离子体中。 由于等离子体中的能量与质量成反比，所以可以抑制具有大质量的卤素离子的无序运动。 因此，卤素离子可以垂直入射在半导体晶片的表面上。 因此，可以进行显示高各向异性的蚀刻工艺。

公开(公告)号：US4891095A

公开(公告)日：1990-01-02

申请号：US325917

申请日：1989-03-20

申请人： Tomoaki Ishida ,  Kyusaku Nishioka

发明人： Tomoaki Ishida ,  Kyusaku Nishioka

IPC分类号： H01L21/302 ,  H01J37/32 ,  H01L21/205 ,  H01L21/3065 ,  H01L21/31 ,  H05H1/46

CPC分类号： H01J37/32623 ,  H01J37/3266 ,  H01J37/32678 ,  H05H1/46

摘要： A mirror field which faces a surface of a specimen to be treated and which has its field axis parallel to the specimen surface is formed in an atmosphere in a reactive gas, and a plasma of the reactive gas is then generated by introducing microwave energy into a region where the mirror field is formed, the thus-formed plasma being confined by the mirror field. The specimen is then treated by activated neutral particles which are produced by the plasma to the surface of the specimen. Preferably, an electric field is formed in the direction along the field axis of the mirror field in a region where the plasma is generated.

摘要翻译： 在反应气体的气氛中形成面向待​​处理试样的表面并且其场轴平行于试样表面的反射场，然后通过将微波能量引入到反应气体中来产生等离子体 形成镜面场的区域，这样形成的等离子体被镜面场限制。 然后将样品通过由等离子体产生的活性中性颗粒处理到样品的表面。 优选地，在产生等离子体的区域中沿着镜面场的场轴的方向形成电场。

公开(公告)号：US5070030A

公开(公告)日：1991-12-03

申请号：US606828

申请日：1990-10-31

申请人： Tatsuhiko Ikeda ,  Kazuyuki Sugahara ,  Shigeru Kusunoki ,  Kyusaku Nishioka

发明人： Tatsuhiko Ikeda ,  Kazuyuki Sugahara ,  Shigeru Kusunoki ,  Kyusaku Nishioka

IPC分类号： H01L21/285 ,  H01L21/331 ,  H01L29/73

CPC分类号： H01L29/7317 ,  H01L21/28525 ,  Y10S148/011

摘要： Disclosed herein is a bipolar transistor and a method of manufacturing the same. The present invention provides a bipolar transistor in which a collector layer, a base layer and an emitter layer are transversely arranged in sequence through a monocrystal silicon layer formed on an insulation layer of a semiconductor substrate and a method of manufacturing the same. According to the present invention, parasitic capacity between a base and a collector can be reduced and p-n junction capacity between the collector and the substrate can be removed, thereby to achieve high-speed operation.

公开(公告)号：US4990991A

公开(公告)日：1991-02-05

申请号：US115049

申请日：1987-10-30

申请人： Tatsuhiko Ikeda ,  Kazuyuki Sugahara ,  Shigeru Kusunoki ,  Kyusaku Nishioka

发明人： Tatsuhiko Ikeda ,  Kazuyuki Sugahara ,  Shigeru Kusunoki ,  Kyusaku Nishioka

IPC分类号： H01L21/285 ,  H01L21/331 ,  H01L29/73

CPC分类号： H01L29/7317 ,  H01L21/28525 ,  Y10S148/011

摘要： Disclosed herein is a bipolar transistor and a method of manufacturing the same. The present invention provides a biolar transistor in which a collector layer, a base layer and an emitter layer are transversely arranged in sequence through a monocrystal silicon layer formed on an insulation layer of a semiconductor substrate and a method of manufacturing the same. According to the present invention, parasitic capacity between a base and a collector can be reduced and p-n junction capacity between the collector and the substrate can be removed, thereby to achieve high-speed operation.

摘要翻译： 本文公开了一种双极晶体管及其制造方法。 本发明提供一种双极晶体管及其制造方法，其中集电极层，基极层和发射极层依次形成在半导体衬底的绝缘层上形成的单晶硅层。 根据本发明，可以降低基极和集电极之间的寄生电容，并且可以去除集电极和基板之间的p-n结电容，从而实现高速操作。