利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

14 条记录 (耗时 0.025 秒)

    Semiconductor wafer treating device utilizing ECR plasma
    1.
    发明授权
    Semiconductor wafer treating device utilizing ECR plasma 失效
    采用ECR等离子体的半导体晶片处理装置

    公开(公告)号：US4915979A

    公开(公告)日：1990-04-10

    申请号：US279016

    申请日：1988-12-02

    申请人： Tomoaki Ishida ,  Nobuo Fujiwara ,  Kyusaku Nishioka ,  Moriaki Akazawa ,  Teruo Shibano ,  Kenji Kawai

    发明人： Tomoaki Ishida ,  Nobuo Fujiwara ,  Kyusaku Nishioka ,  Moriaki Akazawa ,  Teruo Shibano ,  Kenji Kawai

    IPC分类号： H01L21/302 ,  H01J37/32 ,  H01L21/205 ,  H01L21/3065 ,  H01L21/31

    CPC分类号： H01J37/32357

    摘要： A semiconductor wafer treating device utilizing a gas plasma generated by electron cyclotron resonance (ECR) is disclosed whch comprises a wafer treating chamber and a plasma generating chamber communicating with the wafer treating chamber. Microwave energy at a frequency of not more than 2 GHz and not less than 100 MHz is supplied to the plasma generating chamber which is surrounded by a solenoidal coil and produces a magnetic field in the plasma generating chamber and in the wafer treating chamber to produce ECR and transport the plasma generated by ECR to the wafer. Thus, the Larmor radius of the electrons moving in helical paths in electron cyclotron resonance in the plasma generating chamber is optimized to make the plasma spatially uniform. Consequently, the uniformity of the treatment on the wafer is improved.

    摘要翻译： 公开了一种利用电子回旋共振（ECR）产生的气体等离子体的半导体晶片处理装置，包括晶片处理室和与晶片处理室连通的等离子体产生室。 将频率不大于2GHz且不小于100MHz的微波能量提供给由螺线管线圈包围的等离子体发生室，并在等离子体发生室和晶片处理室中产生磁场以产生ECR 并将由ECR产生的等离子体输送到晶片。 因此，优化了在等离子体发生室中的电子回旋共振中在螺旋路径中移动的电子的拉莫半径使得等离子体在空间上均匀。 因此，提高了晶片上的处理的均匀性。

    Semiconductor wafer treating device utilizing a plasma
    2.
    发明授权
    Semiconductor wafer treating device utilizing a plasma 失效
    利用等离子体的半导体晶片处理装置

    公开(公告)号：US4982138A

    公开(公告)日：1991-01-01

    申请号：US277640

    申请日：1988-11-29

    申请人： Nobuo Fujiwara ,  Kenji Kawai ,  Moriaki Akazawa ,  Teruo Shibano ,  Tomoaki Ishida ,  Kyusaku Nishioka

    发明人： Nobuo Fujiwara ,  Kenji Kawai ,  Moriaki Akazawa ,  Teruo Shibano ,  Tomoaki Ishida ,  Kyusaku Nishioka

    IPC分类号： H01L21/302 ,  H01J37/32 ,  H01L21/205 ,  H01L21/3065 ,  H01L21/31 ,  H05H1/46

    CPC分类号： H01J37/32678

    摘要： A wafer treating device utilizing a plasma generated by a gas discharge caused by electron cyclotron resonance (ECR) includes a wafer treating chamber and a plasma generating chamber, a microwave supply for supplying microwave energy to the plasma generating chamber, and an electromagnetic coil which surrounds the plasma generating chamber to produce a minimum B-field therein. A plasma generated in the plasma generating chamber by electron cyclotron resonance is confined stably therein by the minimum B-field produced by the coil. Thus, the density and stability of the plasma in the plasma generating chamber are enhanced. The plasma in the plasma generating chamber is conveyed to a wafer in the wafer treating chamber along the diverging lines of a magnetic force. Examples of the minimum B-field producing coil include Ioffe bars, a baseball coil and an Yin-yang coil.

    摘要翻译： 利用由电子回旋共振（ECR）引起的气体放电产生的等离子体的晶片处理装置包括晶片处理室和等离子体发生室，用于向等离子体发生室供给微波能量的微波电源和围绕 该等离子体产生室在其中产生最小的B场。 通过电子回旋共振在等离子体发生室中产生的等离子体由线圈产生的最小B场稳定地限制在其中。 因此，提高等离子体发生室中的等离子体的密度和稳定性。 等离子体发生室中的等离子体沿着磁力的发散线被输送到晶片处理室中的晶片。 最小B场产生线圈的实例包括Ioffe棒，棒球线圈和阴阳线圈。

    Method for cleaning semiconductor devices
    3.
    发明授权
    Method for cleaning semiconductor devices 失效
    半导体器件清洗方法

    公开(公告)号：US5474615A

    公开(公告)日：1995-12-12

    申请号：US993514

    申请日：1992-12-17

    申请人： Tomoaki Ishida ,  Kenji Kawai ,  Moriaki Akazawa ,  Takahiro Maruyama ,  Toshiaki Ogawa

    发明人： Tomoaki Ishida ,  Kenji Kawai ,  Moriaki Akazawa ,  Takahiro Maruyama ,  Toshiaki Ogawa

    IPC分类号： H01L21/302 ,  H01L21/00 ,  H01L21/304 ,  H01L21/306 ,  H01L21/3065 ,  C03C15/00

    CPC分类号： H01L21/02046 ,  H01L21/02057 ,  H01L21/02071 ,  H01L21/67028 ,  Y10S438/963

    摘要： A method of cleaning semiconductor devices which removes or transmutes the contaminants sticking on sidewalls of a pattern or a trench is formed is disclosed. A substrate to be treated on which a pattern or a trench is formed is located in a processing container. A reactive gas which reacts with the contaminants sticking on the sidewall of the pattern or the trench to produce reactive ions which remove or transmute the contaminants is introduced into the processing container. Plasma of the reactive gas is produced by electronic cyclotron resonance in order to produce reactive ions from the reactive gas introduced into the processing container. According to the method, the temperature of the reactive ions in the plasma becomes high, with the result that the motion of the reactive ions in the plasma becomes more active. Accordingly, a velocity vector in a horizontal direction of the reactive ions becomes larger, which enables efficient removal or change in quality of the contaminants sticking on the sidewalls of the pattern or the trench.

    摘要翻译： 公开了一种清洁半导体器件的方法，该半导体器件去除或转移粘附在图案或沟槽的侧壁上的污染物。 在其上形成图案或沟槽的被处理基板位于处理容器中。 与粘附在图案或沟槽的侧壁上的污染物反应以产生去除或改变污染物的活性离子的反应气体被引入处理容器中。 反应气体的等离子体通过电子回旋共振产生，以便从引入处理容器的反应气体产生活性离子。 根据该方法，等离子体中的反应离子的温度变高，结果是等离子体中的活性离子的运动变得更加活跃。 因此，反应离子的水平方向的速度矢量变大，能够有效地去除或污染物附着在图案或沟槽的侧壁上的质量的变化。

    Plasma etching method with enhanced anisotropic property and apparatus thereof
    6.
    发明授权
    Plasma etching method with enhanced anisotropic property and apparatus thereof 失效
    具有增强的等离子体物质的等离子体蚀刻方法及其装置

    公开(公告)号：US5223085A

    公开(公告)日：1993-06-29

    申请号：US653634

    申请日：1991-02-12

    申请人： Kenji Kawai ,  Moriaki Akazawa ,  Takahiro Maruyama ,  Toshiaki Ogawa ,  Hiroshi Morita

    发明人： Kenji Kawai ,  Moriaki Akazawa ,  Takahiro Maruyama ,  Toshiaki Ogawa ,  Hiroshi Morita

    IPC分类号： H01L21/302 ,  C23F4/00 ,  H01L21/3065 ,  H01L21/3213

    CPC分类号： H01L21/32137 ,  C23F4/00 ,  H01L21/32136

    摘要： A method for anisotropically etching a substrate to be treated using plasma of a reactive gas produced by electron cyclotron resonance is disclosed. A substrate to be treated is located in a processing container, and a chlorine gas and a hydrogen chloride gas are introduced into the processing container. From the mixture of the chlorine and hydrogen chloride gases introduced into the processing container, plasma of the mixed gas is produced by electron cyclotron resonance. According to this method, the energy of the plasma of chlorine is taken by the plasma of H.sup.+, which results in a decrease in kinetic energy of the chlorine. As a result, the plasma of chlorine impinges vertically to the substrate to be treated along the sheath electric field. Consequently, etching with strong anisotropic property is enabled.

    摘要翻译： 公开了一种通过电子回旋共振产生的反应气体的等离子体各向异性蚀刻待处理的基板的方法。 待处理的基板位于处理容器中，并且将氯气和氯化氢气体引入处理容器中。 从引入处理容器的氯气和氯化氢气体的混合物中，通过电子回旋共振产生混合气体的等离子体。 根据这种方法，氯的等离子体的能量由H +的等离子体摄取，这导致氯的动能降低。 结果，氯的等离子体沿护套电场垂直地撞击待处理的基板。 因此，能够进行强烈的各向异性特性的蚀刻。