公开(公告)号：US4982138A

公开(公告)日：1991-01-01

申请号：US277640

申请日：1988-11-29

申请人： Nobuo Fujiwara ,  Kenji Kawai ,  Moriaki Akazawa ,  Teruo Shibano ,  Tomoaki Ishida ,  Kyusaku Nishioka

发明人： Nobuo Fujiwara ,  Kenji Kawai ,  Moriaki Akazawa ,  Teruo Shibano ,  Tomoaki Ishida ,  Kyusaku Nishioka

IPC分类号： H01L21/302 ,  H01J37/32 ,  H01L21/205 ,  H01L21/3065 ,  H01L21/31 ,  H05H1/46

CPC分类号： H01J37/32678

摘要： A wafer treating device utilizing a plasma generated by a gas discharge caused by electron cyclotron resonance (ECR) includes a wafer treating chamber and a plasma generating chamber, a microwave supply for supplying microwave energy to the plasma generating chamber, and an electromagnetic coil which surrounds the plasma generating chamber to produce a minimum B-field therein. A plasma generated in the plasma generating chamber by electron cyclotron resonance is confined stably therein by the minimum B-field produced by the coil. Thus, the density and stability of the plasma in the plasma generating chamber are enhanced. The plasma in the plasma generating chamber is conveyed to a wafer in the wafer treating chamber along the diverging lines of a magnetic force. Examples of the minimum B-field producing coil include Ioffe bars, a baseball coil and an Yin-yang coil.

摘要翻译： 利用由电子回旋共振（ECR）引起的气体放电产生的等离子体的晶片处理装置包括晶片处理室和等离子体发生室，用于向等离子体发生室供给微波能量的微波电源和围绕 该等离子体产生室在其中产生最小的B场。 通过电子回旋共振在等离子体发生室中产生的等离子体由线圈产生的最小B场稳定地限制在其中。 因此，提高等离子体发生室中的等离子体的密度和稳定性。 等离子体发生室中的等离子体沿着磁力的发散线被输送到晶片处理室中的晶片。 最小B场产生线圈的实例包括Ioffe棒，棒球线圈和阴阳线圈。

公开(公告)号：US5304775A

公开(公告)日：1994-04-19

申请号：US710988

申请日：1991-06-06

申请人： Nobuo Fujiwara ,  Kyusaku Nishioka ,  Teruo Shibano

发明人： Nobuo Fujiwara ,  Kyusaku Nishioka ,  Teruo Shibano

IPC分类号： H01L21/3065 ,  H01L21/311 ,  H01L21/3213 ,  B23K9/00

CPC分类号： H01L21/31111 ,  H01L21/3065 ,  H01L21/32136 ,  H01L21/32137

摘要： Fine processing is performed by using gas which contains halogen in such a manner that halogen ions contributing to an etching process and ions of a light element, the mass of which is smaller than that of the halogen ion and which does not react with a semiconductor wafer, are present in a plasma generated due to electron cyclotron resonance. Since energy in the plasma is in inverse proportion to the mass, the disorder motion of the halogen ions having large mass can be restrained. Therefore, the halogen ions can be made perpendicularly incident upon the surface of the semiconductor wafer. Consequently, etching process revealing high anisotropy can be performed.

摘要翻译： 通过使用含有卤素的气体，使得有助于蚀刻工艺的卤素离子和轻质元素的离子质量小于卤素离子的离子并且不与半导体晶片反应来进行精细加工 存在于由于电子回旋共振而产生的等离子体中。 由于等离子体中的能量与质量成反比，所以可以抑制具有大质量的卤素离子的无序运动。 因此，卤素离子可以垂直入射在半导体晶片的表面上。 因此，可以进行显示高各向异性的蚀刻工艺。

公开(公告)号：US4915979A

公开(公告)日：1990-04-10

申请号：US279016

申请日：1988-12-02

申请人： Tomoaki Ishida ,  Nobuo Fujiwara ,  Kyusaku Nishioka ,  Moriaki Akazawa ,  Teruo Shibano ,  Kenji Kawai

发明人： Tomoaki Ishida ,  Nobuo Fujiwara ,  Kyusaku Nishioka ,  Moriaki Akazawa ,  Teruo Shibano ,  Kenji Kawai

IPC分类号： H01L21/302 ,  H01J37/32 ,  H01L21/205 ,  H01L21/3065 ,  H01L21/31

CPC分类号： H01J37/32357

摘要： A semiconductor wafer treating device utilizing a gas plasma generated by electron cyclotron resonance (ECR) is disclosed whch comprises a wafer treating chamber and a plasma generating chamber communicating with the wafer treating chamber. Microwave energy at a frequency of not more than 2 GHz and not less than 100 MHz is supplied to the plasma generating chamber which is surrounded by a solenoidal coil and produces a magnetic field in the plasma generating chamber and in the wafer treating chamber to produce ECR and transport the plasma generated by ECR to the wafer. Thus, the Larmor radius of the electrons moving in helical paths in electron cyclotron resonance in the plasma generating chamber is optimized to make the plasma spatially uniform. Consequently, the uniformity of the treatment on the wafer is improved.

摘要翻译： 公开了一种利用电子回旋共振（ECR）产生的气体等离子体的半导体晶片处理装置，包括晶片处理室和与晶片处理室连通的等离子体产生室。 将频率不大于2GHz且不小于100MHz的微波能量提供给由螺线管线圈包围的等离子体发生室，并在等离子体发生室和晶片处理室中产生磁场以产生ECR 并将由ECR产生的等离子体输送到晶片。 因此，优化了在等离子体发生室中的电子回旋共振中在螺旋路径中移动的电子的拉莫半径使得等离子体在空间上均匀。 因此，提高了晶片上的处理的均匀性。

公开(公告)号：US4877509A

公开(公告)日：1989-10-31

申请号：US269688

申请日：1988-11-10

申请人： Toshiaki Ogawa ,  Nobuo Fujiwara ,  Kenji Kawai ,  Teruo Shibano ,  Hiroshi Morita ,  Kyusaku Nishioka

发明人： Toshiaki Ogawa ,  Nobuo Fujiwara ,  Kenji Kawai ,  Teruo Shibano ,  Hiroshi Morita ,  Kyusaku Nishioka

IPC分类号： H01L21/302 ,  C23C16/511 ,  H01J37/32 ,  H01L21/205 ,  H01L21/3065 ,  H01L21/31

CPC分类号： H01J37/32293 ,  C23C16/511 ,  H01J37/32192 ,  H01J37/32678

摘要： An apparatus for treating semiconductor wafers utilizing a plasma generated by electron cyclotron resonance (ECR) is disclosed in which a microwave is supplied to a plasma generating chamber via a rectangular waveguide, a rectangular-to-circular microwave converter, and a circular polarization converter. The polarization converter may comprise a phase shift plate of a dielectric material or an electrically conductive material disposed in a circular waveguide in the form of a metallic cylinder. The polarization converter transforms a circular TE.sub.11 mode microwave supplied from the rectangular-to-circular microwave converter to a circularly polarized one by rotating the direction of the electric field of the microwave in the TE.sub.11 mode one complete turn in one period of the microwave. Thus, the electric field strength of the microwave supplied to the plasma generating chamber is averaged over the time along the circumferential direction in the plasma generating chamber to make the density of plasma generation therein spatially uniform. The spatially uniformly distributed plasma generated in the plasma generating chamber is conveyed to the wafer in the wafer treating chamber to effect a treatment of the wafer.

摘要翻译： 公开了一种利用电子回旋共振（ECR）产生的等离子体处理半导体晶片的装置，其中通过矩形波导，矩形到圆形微波转换器和圆偏振转换器将微波提供给等离子体发生室。 偏振转换器可以包括介电材料的相移板或设置在金属圆筒形状的圆形波导中的导电材料。 在微波的一个周期内，通过在TE11模式一周内旋转微波的电场方向，将由矩形到圆形的微波转换器提供的循环TE11模式的微波变换成圆偏振的微波。 因此，供给到等离子体发生室的微波的电场强度在等离子体发生室中沿着圆周方向的时间平均化，使得其中等离子体产生的密度在空间上均匀。 在等离子体发生室中产生的空间均匀分布的等离子体被输送到晶片处理室中的晶片，以对晶片进行处理。

公开(公告)号：US20060245603A1

公开(公告)日：2006-11-02

申请号：US11386753

申请日：2006-03-23

申请人： Nobuyuki Suzuki ,  Nobuo Fujiwara

发明人： Nobuyuki Suzuki ,  Nobuo Fujiwara

IPC分类号： H03G3/00

CPC分类号： H03G1/0088

摘要： An audio signal is input to a step-down transformer 11, where it is attenuated by voltage step-down, and then input via a select switch 12 to a variable resistor 13, where it is further attenuated by voltage division.

摘要翻译： 将音频信号输入到降压变压器11，在该降压变压器11中，通过降压降压，然后经由选择开关12输入到可变电阻器13，在该可变电阻器13中进一步被分压衰减。

公开(公告)号：US5534458A

公开(公告)日：1996-07-09

申请号：US442925

申请日：1995-05-17

申请人： Tomonori Okudaira ,  Takeharu Kuroiwa ,  Nobuo Fujiwara ,  Keiichiro Kashihara

发明人： Tomonori Okudaira ,  Takeharu Kuroiwa ,  Nobuo Fujiwara ,  Keiichiro Kashihara

IPC分类号： H01L21/28 ,  H01L21/02 ,  H01L21/3205 ,  H01L21/768 ,  H01L21/822 ,  H01L21/8242 ,  H01L21/8246 ,  H01L23/522 ,  H01L27/04 ,  H01L27/105 ,  H01L21/70 ,  H01L27/00

CPC分类号： H01L27/10852 ,  H01L21/3205 ,  H01L28/40 ,  H01L28/55 ,  Y10S257/915 ,  Y10S438/978

摘要： According to a semiconductor device and a method of manufacturing thereof, a sidewall spacer is formed at a sidewall of a contact hole, in a recess portion defined by the sidewall of the contact hole and a buried conductive layer, having a film thickness gradually increasing from a top face corner of an interlayer insulation film to the surface of the buried conductive layer. Therefore, a semiconductor device that can achieve favorable breakdown voltage and anti-leak characteristics between a lower electrode layer and an upper electrode layer forming a capacitor of a DRAM.

摘要翻译： 根据半导体器件及其制造方法，在由接触孔的侧壁限定的凹部和埋入导电层的接触孔的侧壁处形成侧壁间隔物，其中膜厚度从 层间绝缘膜的顶面角到掩埋导电层的表面。 因此，可以在形成DRAM的电容器的下电极层和上电极层之间实现良好的击穿电压和防漏电特性的半导体装置。

公开(公告)号：US06156639A

公开(公告)日：2000-12-05

申请号：US116340

申请日：1998-07-16

申请人： Tetsuhiro Fukao ,  Yoshihiro Kusumi ,  Hiroshi Miyatake ,  Nobuo Fujiwara ,  Shigenori Sakamori ,  Satoshi Iida

发明人： Tetsuhiro Fukao ,  Yoshihiro Kusumi ,  Hiroshi Miyatake ,  Nobuo Fujiwara ,  Shigenori Sakamori ,  Satoshi Iida

IPC分类号： H01L21/3205 ,  H01L21/768 ,  H01L23/52 ,  H01L23/522 ,  H01L23/532 ,  H01L21/4763

CPC分类号： H01L23/53223 ,  H01L21/76838 ,  H01L23/5226 ,  H01L2924/0002

摘要： Provided are a method for manufacturing contact structure to prevent, in the wire of a borderless structure, erosion in the contact area between the wire and a conductor. An interlayer insulating film (300) having a wire burying hole is formed and a conductor (400) is buried in the hole. Then, a wire layer (500) covering the hole is formed on the interlayer insulating film (300). The wire layer (500) is made so as to have a borderless structure by using a resist (540) as a mask. A barrier metal layer (510) suppresses erosion in the contact area between the conductor (400) and the wire layer (500).

摘要翻译： 提供一种用于制造接触结构的方法，以防止无边界结构的电线在导线和导体之间的接触面积中受到侵蚀。 形成具有线掩埋孔的层间绝缘膜（300），将导体（400）埋入孔内。 然后，在层间绝缘膜（300）上形成覆盖该孔的导线层（500）。 通过使用抗蚀剂（540）作为掩模，将导线层（500）制成为具有无边界结构。 阻挡金属层（510）抑制导体（400）和导线层（500）之间的接触区域的侵蚀。

公开(公告)号：US5435886A

公开(公告)日：1995-07-25

申请号：US247405

申请日：1994-05-23

申请人： Nobuo Fujiwara ,  Takahiro Maruyama ,  Kenji Kawai ,  Takahiro Hoshiko

发明人： Nobuo Fujiwara ,  Takahiro Maruyama ,  Kenji Kawai ,  Takahiro Hoshiko

IPC分类号： C23F4/00 ,  H01J37/02 ,  H01J37/32 ,  H01L21/302 ,  H01L21/3065 ,  B44C1/22

CPC分类号： H01J37/32623 ,  H01J37/026 ,  H01J37/32192 ,  H01J37/32678 ,  H01J37/32706 ,  H01J2237/0044 ,  H01J2237/3347

摘要： A method of electron cyclotron resonance plasma etching including generating a constant plasma in a gas in a chamber containing a semiconductor wafer by supplying microwave energy to the chamber continuously and applying a pulsed direct current bias to the semiconductor wafer, wherein the pulsed bias has a period substantially equal to a time constant determined by the capacitance of the semiconductor wafer and the resistance of an ion sheath at the surface of the semiconductor wafer.

摘要翻译： 一种电子回旋共振等离子体蚀刻方法，其包括通过向所述腔室连续供给微波能量并向所述半导体晶片施加脉冲直流偏压，在包含半导体晶片的腔室中的气体中产生恒定的等离子体，其中所述脉冲偏压具有周期 基本上等于由半导体晶片的电容和离子鞘在半导体晶片表面的电阻确定的时间常数。

公开(公告)号：US4629998A

公开(公告)日：1986-12-16

申请号：US667394

申请日：1984-11-02

申请人： Nobuo Fujiwara

发明人： Nobuo Fujiwara

IPC分类号： H03G1/04 ,  H03H11/24 ,  H03F3/04 ,  H03G3/20

CPC分类号： H03G1/04 ,  H03H11/24

摘要： A variable gain equalizer comprises an equalizing network having an impedance element coupled between an input terminal to which an input voltage is applied and an output terminal. A potentiometer is provided having first and second mutually complementarily variable resistance portions divided by a slidable tap having an inherent contact resistance connected to ground. The first and second portions of the potentiometer are coupled in the equalizing network in series with the impedance element. An inversion type current mirror curcuit causes an input alternating current to flow as a function of the input voltage in the contact resistance of the potentiometer through the first resistance portion and causes an output alternating current of equal amplitude to, but opposite phase to, the input alternating current to flow in the contact resistance through the second resistance portion and impedance element to the output terminal.

摘要翻译： 可变增益均衡器包括均衡网络，其具有耦合在施加输入电压的输入端子与输出端子之间的阻抗元件。 电位器具有第一和第二相互互补的电阻部分，由具有连接到地的固有接触电阻的可滑动的分接头分开。 电位器的第一和第二部分与均衡网络耦合，与阻抗元件串联。 反转型电流镜电路使得输入交流电流作为电位器通过第一电阻部分的接触电阻中的输入电压的函数流动，并且产生与输入相等但相反相位的输出交流电 交流电流通过第二电阻部分和阻抗元件在接触电阻中流到输出端子。

公开(公告)号：US5442213A

公开(公告)日：1995-08-15

申请号：US255854

申请日：1994-06-07

申请人： Tomonori Okudaira ,  Takeharu Kuroiwa ,  Nobuo Fujiwara ,  Keiichiro Kashihara

发明人： Tomonori Okudaira ,  Takeharu Kuroiwa ,  Nobuo Fujiwara ,  Keiichiro Kashihara

IPC分类号： H01L21/28 ,  H01L21/02 ,  H01L21/3205 ,  H01L21/768 ,  H01L21/822 ,  H01L21/8242 ,  H01L21/8246 ,  H01L23/522 ,  H01L27/04 ,  H01L27/105 ,  G11C11/24

CPC分类号： H01L27/10852 ,  H01L21/3205 ,  H01L28/40 ,  H01L28/55 ,  Y10S257/915 ,  Y10S438/978

摘要： According to a semiconductor device and a method of manufacturing thereof, a sidewall spacer is formed at a sidewall of a contact hole, in a recess portion defined by the sidewall of the contact hole and a buried conductive layer, having a film thickness gradually increasing from a top face corner of an interlayer insulation film to the surface of the buried conductive layer. Therefore, a semiconductor device that can achieve favorable breakdown voltage and anti-leak characteristics between a lower electrode layer and an upper electrode layer forming a capacitor of a DRAM.

摘要翻译： 根据半导体器件及其制造方法，在由接触孔的侧壁限定的凹部和埋入导电层的接触孔的侧壁处形成侧壁间隔物，其中膜厚度从 层间绝缘膜的顶面角到掩埋导电层的表面。 因此，可以在形成DRAM的电容器的下电极层和上电极层之间实现良好的击穿电压和防漏电特性的半导体装置。