公开(公告)号：US08532818B2

公开(公告)日：2013-09-10

申请号：US12712861

申请日：2010-02-25

申请人： Tomohiro Ohashi ,  Tsutomu Nakamura ,  Hidenobu Tanimura ,  Michiaki Kobayashi

发明人： Tomohiro Ohashi ,  Tsutomu Nakamura ,  Hidenobu Tanimura ,  Michiaki Kobayashi

IPC分类号： G06F7/00

CPC分类号： H01L21/67766 ,  H01L21/67778

摘要： A vacuum chamber includes: a vacuum vessel arranged at the backward side, where a wafer of a processing subject is processed inside an internal processing chamber; a transfer chamber arranged at the forward side, where said wafer is transferred at the inside thereof under atmospheric pressure; a cassette stage arranged at the forward of this transfer chamber, where a cassette storing said wafer is mounted; a lock chamber connected with said transfer chamber at the backward of said transfer chamber; a robot arranged inside said transfer chamber, where said wafer is transferred between said cassette and said lock chamber; and an aligning machine for making position of said wafer fit with the predetermined position, wherein the wafer is transferred to said lock chamber, after performing alignment of said wafer on said aligning machine, in the case where displacement amount of position of this wafer is larger than the predetermined value.

摘要翻译： 真空室包括：设置在后方的真空容器，处理对象的晶片在内部处理室内处理; 传送室，其布置在前侧，其中所述晶片在其大气压下在其内部传送; 设置在该传送室前方的盒级，其中安装有存储所述晶片的盒; 在所述传送室的后方与所述传送室连接的锁定室; 布置在所述传送室内部的机器，其中所述晶片在所述盒和所述锁定室之间传送; 以及用于使所述晶片的位置与所述预定位置配合的对准机，其中在所述晶片位于所述对准机器的位置的位移量较大的情况下，在将所述晶片对准所述对准机器之后，将所述晶片转移到所述锁定室 超过预定值。

公开(公告)号：US20110137454A1

公开(公告)日：2011-06-09

申请号：US12712861

申请日：2010-02-25

申请人： Tomohiro OHASHI ,  Tsutomu Nakamura ,  Hidenobu Tanimura ,  Michiaki Kobayashi

发明人： Tomohiro OHASHI ,  Tsutomu Nakamura ,  Hidenobu Tanimura ,  Michiaki Kobayashi

IPC分类号： H01L21/677 ,  H01L21/68

CPC分类号： H01L21/67766 ,  H01L21/67778

摘要： A vacuum chamber includes: a vacuum vessel arranged at the backward side, where a wafer of a processing subject is processed inside an internal processing chamber; a transfer chamber arranged at the forward side, where said wafer is transferred at the inside thereof under atmospheric pressure; a cassette stage arranged at the forward of this transfer chamber, where a cassette storing said wafer is mounted; a lock chamber connected with said transfer chamber at the backward of said transfer chamber; a robot arranged inside said transfer chamber, where said wafer is transferred between said cassette and said lock chamber; and an aligning machine for making position of said wafer fit with the predetermined position, wherein the wafer is transferred to said lock chamber, after performing alignment of said wafer on said aligning machine, in the case where displacement amount of position of this wafer is larger than the predetermined value.

摘要翻译： 真空室包括：设置在后方的真空容器，处理对象的晶片在内部处理室内处理; 传送室，其布置在前侧，其中所述晶片在其大气压下在其内部传送; 设置在该传送室前方的盒级，其中安装有存储所述晶片的盒; 在所述传送室的后方与所述传送室连接的锁定室; 布置在所述传送室内部的机器，其中所述晶片在所述盒和所述锁定室之间传送; 以及用于使所述晶片的位置与所述预定位置相配合的对准机，其中在所述晶片位于所述对准机器的位置量较大的情况下，在将所述晶片对准所述对准机之后，将所述晶片转移到所述锁定室 超过预定值。

公开(公告)号：US20100186672A1

公开(公告)日：2010-07-29

申请号：US12379643

申请日：2009-02-26

申请人： Koji Okuda ,  Tsutomu Nakamura ,  Michiaki Kobayashi ,  Masakazu Isozaki ,  Hidenobu Tanimura

发明人： Koji Okuda ,  Tsutomu Nakamura ,  Michiaki Kobayashi ,  Masakazu Isozaki ,  Hidenobu Tanimura

IPC分类号： C23C16/00

CPC分类号： C23C16/4586 ,  C23C16/505 ,  H01L21/67109 ,  H01L21/6719 ,  H01L21/68785

摘要： A plasma processing apparatus composed of a processing chamber in a vacuum vessel to which a gas is fed to form a plasma, a sample stage in which a channel for a heat exchange medium is formed, beams for supporting the sample stage in the horizontal direction, a cylindrical space at atmospheric pressure formed below the channel in the sample stage, coupling paths for communicating the inner wall of the cylindrical space with the exterior of the vacuum vessel, a piping conduit for medium formed in the coupling path, a drive mechanism to drive pins for a wafer, and metal blocks covering junctions between the piping conduits for medium and the sample stage, whereby a gas at high temperature is supplied to between the metal blocks and is exhausted through the coupling path.

摘要翻译： 一种等离子体处理装置，由真空容器内的供给气体而形成等离子体的处理室，形成有热交换介质用通道的样品台，水平方向支撑样品台的光束， 大气压下形成的圆柱形空间，形成在样品台的通道下方，用于将圆柱形空间的内壁与真空容器的外部连通的连接路径，形成在联接路径中的介质的管道导管，驱动机构 用于晶片的引脚和覆盖用于介质和样品台的管道导管之间的接合处的金属块，由此将高温气体供应到金属块之间并通过耦合路径排出。

公开(公告)号：US08366370B2

公开(公告)日：2013-02-05

申请号：US12712834

申请日：2010-02-25

申请人： Tsutomu Nakamura ,  Hidenobu Tanimura ,  Yuya Mizobe

发明人： Tsutomu Nakamura ,  Hidenobu Tanimura ,  Yuya Mizobe

IPC分类号： H01L21/677

CPC分类号： H01L21/67772 ,  H01L21/67766

摘要： A vacuum processing apparatus includes a transfer container for transferring a wafer in the internal space thereof reduced in pressure, a vacuum vessel coupled to the side wall of the vacuum vessel and including a processing chamber having a sample stage therein on which a wafer to be processed is mounted, a lid member opened or closed by rotation above the vacuum vessel, an inner chamber member arranged in the vacuum vessel and making up the inner wall of the processing chamber, and a jig coupled to the side wall of the vacuum vessel to lift and hold the inner chamber member by being coupled thereto. The jig includes a first joint portion having vertical and horizontal shafts, an extensible arm portion rotatable around each shaft of the first joint portion, and a second joint portion with the inner chamber member adapted to rotate around the horizontal axis thereof.

摘要翻译： 真空处理装置包括：转印容器，用于在压缩的内部空间中转印晶片;耦合到真空容器的侧壁的真空容器，包括处理室，其中具有待加工晶片的样品台 安装有通过在真空容器上旋转而打开或关闭的盖构件，布置在真空容器中并构成处理室的内壁的内室构件以及联接到真空容器的侧壁的夹具以提升 并且通过与其连接而保持内室构件。 夹具包括具有垂直和水平轴的第一接合部分，可围绕第一接合部分的每个轴转动的可延伸臂部分，以及适于围绕其水平轴线旋转的第二接合部分。

公开(公告)号：US20120012252A1

公开(公告)日：2012-01-19

申请号：US12856863

申请日：2010-08-16

申请人： Hironori Kusumoto ,  Hideki Kihara ,  Tsutomu Nakamura ,  Hidenobu Tanimura ,  Yuuya Mizobe

发明人： Hironori Kusumoto ,  Hideki Kihara ,  Tsutomu Nakamura ,  Hidenobu Tanimura ,  Yuuya Mizobe

IPC分类号： H01L21/465

CPC分类号： H01J37/321 ,  H01J37/3266 ,  H01J37/32816

摘要： A plasma processing apparatus capable of detecting sealing abnormality of each gate is disclosed. This apparatus includes an outer chamber constituting a vacuum vessel, an inner chamber disposed within the outer chamber for permitting a plasma to be formed in a vacuumed processing chamber as internally provided therein, a workpiece table below the processing chamber for holding thereon a wafer to be processed, a first gate valve disposed in a sidewall of the inner chamber for driving a gate to open and close while the wafer is transferred therethrough, and a second gate valve disposed in a sidewall of the outer chamber for opening and closing a gate while the wafer is transferred therethrough. After the wafer is put on the table, a pressure variation of an intermediate room formed between the inner and outer chambers sealed by the gate valves closed, thereby detecting a decrease in sealing performance.

摘要翻译： 公开了能够检测每个门的密封异常的等离子体处理装置。 该装置包括构成真空容器的外室，设置在外室内的内室，用于允许在内部设置的真空处理室内形成等离子体;在处理室下面的用于保持晶片的工件台 处理的第一闸阀，设置在内室的侧壁中，用于在晶片被转移通过时驱动门打开和关闭;以及第二闸阀，设置在外室的侧壁中，用于打开和关闭闸门，同时 晶片转移通过。 在将晶片放在工作台上之后，在由闸阀密封的内室和外室之间形成的中间室的压力变化关闭，从而检测密封性能的降低。

公开(公告)号：US20070068628A1

公开(公告)日：2007-03-29

申请号：US11362868

申请日：2006-02-28

申请人： Takeo Uchino ,  Tsutomu Nakamura ,  Michiaki Kobayashi

发明人： Takeo Uchino ,  Tsutomu Nakamura ,  Michiaki Kobayashi

IPC分类号： H01L21/306 ,  C23C16/00

CPC分类号： H01L21/67769 ,  H01L21/67017 ,  H01L21/67389 ,  H01L21/67775

摘要： A vacuum processing apparatus having an improved wafer processing efficiency and an improved working efficiency is provided. The vacuum processing apparatus includes a vacuum container in which a specimen is processed with plasma generated from a processing gas supplied to the vacuum container; a transfer container through which the specimen processed in the vacuum container is transferred, the transfer container being coupled to the vacuum container under ambient pressure; a blower for generating an ambient gas flow in the transfer container and an outlet disposed on the transfer container; a storage container for storing the specimen processed in the vacuum container, the storage container being disposed in the ambient gas flow in the transfer container; and an exhauster for exhausting a gas in the storage container.

摘要翻译： 提供了一种具有改进的晶片处理效率和提高的工作效率的真空处理设备。 真空处理装置包括：真空容器，其中用从供给到真空容器的处理气体产生的等离子体处理试样; 在真空容器中处理的试样被转移通过的转移容器，转印容器在环境压力下连接到真空容器; 用于在所述转移容器中产生环境气流的鼓风机和设置在所述转移容器上的出口; 储存容器，用于储存处理在真空容器中的试样，该储存容器设置在转移容器中的环境气流中; 以及用于排出储存容器中的气体的排气装置。

公开(公告)号：US20070068626A1

公开(公告)日：2007-03-29

申请号：US11512309

申请日：2006-08-30

申请人： Michiaki Kobayashi ,  Tsutomu Nakamura ,  Takeo Uchino ,  Akitaka Makino ,  Masashi Nakagome

发明人： Michiaki Kobayashi ,  Tsutomu Nakamura ,  Takeo Uchino ,  Akitaka Makino ,  Masashi Nakagome

IPC分类号： C23F1/00 ,  H01L21/306

CPC分类号： H01L21/67126 ,  H01J37/32495 ,  H01J37/3266 ,  H01J37/32743

摘要： A plasma processing apparatus which contributes to reducing required time for maintenance and thereby to enhancing the efficiency of processing and that of apparatus operation is to be provided. A vacuum processing apparatus comprises a vacuum vessel in which a substrate-shaped sample is arranged in an internally arranged processing chamber in which the pressure is reduced; a transfer chamber to which the vacuum vessel is linked and through whose inside reduced in pressure the sample is transferred; a passage which establishes communication between the transfer chamber and the vacuum vessel in a state in which the transfer chamber and the processing chamber are linked to each other and through whose inside the sample not yet processed or already processed is transferred; and a covering member which is removably coupled to cover the internal wall face of the passage, wherein the sample is processed within the processing chamber with a plasma formed in the processing chamber.

摘要翻译： 提供一种等离子体处理装置，其有助于减少维护所需的时间，从而提高处理效率和装置操作的效率。 真空处理装置包括真空容器，其中基板形样品布置在其中压力降低的内部布置的处理室中; 传送室，真空容器连接到该传送室，并且其内部的压力降低，样品被传送; 在传送室和处理室彼此连接并且样品尚未处理或已经被处理的内部的状态下传送在传送室和真空容器之间建立连通的通道; 以及覆盖部件，其可移除地联接以覆盖通道的内壁面，其中，在处理室内用处理室中形成的等离子体处理样品。

公开(公告)号：US20080066859A1

公开(公告)日：2008-03-20

申请号：US11512124

申请日：2006-08-30

申请人： Michiaki Kobayashi ,  Tsutomu Nakamura ,  Akitaka Makino

发明人： Michiaki Kobayashi ,  Tsutomu Nakamura ,  Akitaka Makino

IPC分类号： H01L21/306

CPC分类号： H01J37/3244 ,  H01J37/32834

摘要： A vacuum pump exhausts gas within the processing chamber from a lower portion of a sample so as to reduce pressure within a processing chamber. The vacuum pump includes a rotary vane and a fixed vane which are arranged within a case of the vacuum pump and have a plurality of impeller blades in a coaxial manner; an exhausting port for exhausting the gas exhausted from the rotary vane outside the case; and a conducting port arranged along a lower direction of the rotary vane, into which inert gas is conducted, which are provided on a circumference thereof. An MFC (flow rate adjusting device) is arranged between a gas storage unit of the inert gas and the conducting port, for adjusting an amount of the inert gas.

摘要翻译： 真空泵从样品的下部排出处理室内的气体，以减少处理室内的压力。 所述真空泵包括旋转叶片和固定叶片，所述旋转叶片和固定叶片布置在所述真空泵的壳体内并具有同轴的多个叶轮叶片; 用于将从旋转叶片排出的气体排出外壳的排气口; 以及沿其旋转叶片的下方向布置的导电口，惰性气体被引导入其周围。 在惰性气体的气体存储单元和导电口之间设置MFC（流量调节装置），用于调节惰性气体的量。

公开(公告)号：US08048259B2

公开(公告)日：2011-11-01

申请号：US11512309

申请日：2006-08-30

申请人： Michiaki Kobayashi ,  Tsutomu Nakamura ,  Takeo Uchino ,  Akitaka Makino ,  Masashi Nakagome

发明人： Michiaki Kobayashi ,  Tsutomu Nakamura ,  Takeo Uchino ,  Akitaka Makino ,  Masashi Nakagome

IPC分类号： C23F1/00 ,  C23C16/00 ,  C23C14/00

CPC分类号： H01L21/67126 ,  H01J37/32495 ,  H01J37/3266 ,  H01J37/32743

摘要： A plasma processing apparatus which contributes to reducing required time for maintenance and thereby to enhancing the efficiency of processing and that of apparatus operation is to be provided. A vacuum processing apparatus comprises a vacuum vessel in which a substrate-shaped sample is arranged in an internally arranged processing chamber in which the pressure is reduced; a transfer chamber to which the vacuum vessel is linked and through whose inside reduced in pressure the sample is transferred; a passage which establishes communication between the transfer chamber and the vacuum vessel in a state in which the transfer chamber and the processing chamber are linked to each other and through whose inside the sample not yet processed or already processed is transferred; and a covering member which is removably coupled to cover the internal wall face of the passage, wherein the sample is processed within the processing chamber with a plasma formed in the processing chamber.

摘要翻译： 提供一种等离子体处理装置，其有助于减少维护所需的时间，从而提高处理效率和装置操作的效率。 真空处理装置包括真空容器，其中基板形样品布置在其中压力降低的内部布置的处理室中; 传送室，真空容器连接到该传送室，并且其内部的压力降低，样品被传送; 在传送室和处理室彼此连接并且样品尚未处理或已经被处理的内部的状态下传送在传送室和真空容器之间建立连通的通道; 以及覆盖部件，其可移除地联接以覆盖通道的内壁面，其中，在处理室内用处理室中形成的等离子体处理样品。

公开(公告)号：US20100163185A1

公开(公告)日：2010-07-01

申请号：US12379642

申请日：2009-02-26

申请人： Michiaki Kobayashi ,  Tsutomu Nakamura ,  Koji Okuda ,  Masakazu Isozaki

发明人： Michiaki Kobayashi ,  Tsutomu Nakamura ,  Koji Okuda ,  Masakazu Isozaki

IPC分类号： H01L21/3065

CPC分类号： H01L21/67196

摘要： A vacuum processing apparatus which includes a vacuum vessel having a processing chamber provided therein into which a processing gas is supplied to form a plasma and which processes a wafer located in the processing chamber, and a vacuum transfer vessel having a vacuumed transfer chamber coupled with the vacuum vessel provided therein into which the wafer is transferred. A resin-made film having a plasma resistance is bonded onto a surface of a lid of the vacuum transfer vessel on the side of the transfer chamber.

摘要翻译： 一种真空处理装置，其特征在于，具备：设置有处理室的真空容器，在所述真空容器内设置处理气体，形成等离子体，处理位于所述处理室内的晶片;以及真空转移容器， 其中设置有晶片被转移到其中的真空容器。 将具有耐等离子体电阻的树脂膜粘合到转印室一侧的真空转印容器的盖的表面上。