公开(公告)号：US07608502B2

公开(公告)日：2009-10-27

申请号：US11206777

申请日：2005-08-19

申请人： Tomohisa Iino ,  Naomi Fukumaki ,  Yoshitake Kato ,  Tomoe Yamamoto

发明人： Tomohisa Iino ,  Naomi Fukumaki ,  Yoshitake Kato ,  Tomoe Yamamoto

IPC分类号： H01L21/8242

CPC分类号： H01L21/0228 ,  H01L21/02175 ,  H01L21/02205 ,  H01L21/3141 ,  H01L21/31604 ,  H01L21/31641 ,  H01L21/31645 ,  H01L27/10852 ,  H01L28/90

摘要： In the process for manufacturing a semiconductor device of the present invention, a capacitor dielectric film is deposited via an atomic layer deposition employing an organic source material containing one or more metallic element(s) selected from the group consisting of Zr, Hf, La and Y as a deposition gas. The process for manufacturing a capacitor of the present invention includes obtaining a boundary temperature T (degree C.), at which an increase in a deposition rate for depositing the capacitor dielectric film as increasing the temperature is detected, on the basis of a correlation data of a deposition temperature in the atomic layer deposition employing the deposition gas with a deposition rate for depositing the capacitor dielectric film at the deposition temperature (S100 and S102); and depositing the capacitor dielectric film via the atomic layer deposition employing the deposition gas at a temperature within a range of from (T−20) (degree C.) to (T+20) (degree C.) (S104 to S112).

摘要翻译： 在本发明的半导体装置的制造方法中，通过使用含有选自Zr，Hf，La中的一种或多种金属元素的有机源材料的原子层沉积来沉积电容器电介质膜，以及 Y作为沉积气体。 本发明的电容器的制造方法包括获得边界温度T（℃），在该温度下，根据相关数据，检测出升高温度时沉积电容器电介质膜的沉积速率的增加 使用沉积气体的原子层沉积中的沉积温度为沉积温度时沉积电容器电介质膜的沉积速率（S100和S102）; 在（T-20）（℃）〜（T + 20）（℃）（℃）（S104〜S112）的范围内的温度下，通过使用沉积气体的原子层沉积来沉积电容器电介质膜。

公开(公告)号：US20060046421A1

公开(公告)日：2006-03-02

申请号：US11206777

申请日：2005-08-19

申请人： Tomohisa Iino ,  Naomi Fukumaki ,  Yoshitake Kato ,  Tomoe Yamamoto

发明人： Tomohisa Iino ,  Naomi Fukumaki ,  Yoshitake Kato ,  Tomoe Yamamoto

IPC分类号： H01L21/20 ,  H01L21/8242 ,  H01L21/31

CPC分类号： H01L21/0228 ,  H01L21/02175 ,  H01L21/02205 ,  H01L21/3141 ,  H01L21/31604 ,  H01L21/31641 ,  H01L21/31645 ,  H01L27/10852 ,  H01L28/90

摘要： In the process for manufacturing a semiconductor device of the present invention, a capacitor dielectric film is deposited via an atomic layer deposition employing an organic source material containing one or more metallic element(s) selected from the group consisting of Zr, Hf, La and Y as a deposition gas. The process for manufacturing a capacitor of the present invention includes obtaining a boundary temperature T (degree C.), at which an increase in a deposition rate for depositing the capacitor dielectric film as increasing the temperature is detected, on the basis of a correlation data of a deposition temperature in the atomic layer deposition employing the deposition gas with a deposition rate for depositing the capacitor dielectric film at the deposition temperature (S100 and S102); and depositing the capacitor dielectric film via the atomic layer deposition employing the deposition gas at a temperature within a range of from (T−20) (degree C.) to (T+20) (degree C.) (S104 to S112).

摘要翻译： 在本发明的半导体装置的制造方法中，通过使用含有选自Zr，Hf，La中的一种或多种金属元素的有机源材料的原子层沉积来沉积电容器电介质膜，以及 Y作为沉积气体。 本发明的电容器的制造方法包括获得边界温度T（℃），在该温度下，根据相关数据，检测出升高温度时沉积电容器电介质膜的沉积速率的增加 使用沉积气体的原子层沉积中的沉积温度具有沉积速率以在沉积温度下沉积电容器电介质膜的沉积温度（S100和S102）; 并且在（T-20）（℃）〜（T + 20）（℃）的范围内的温度（C 104〜S 112），通过使用沉积气体的原子层沉积，沉积电容器电介质膜 ）。

公开(公告)号：US20090217873A1

公开(公告)日：2009-09-03

申请号：US12370648

申请日：2009-02-13

申请人： Tomohisa Iino ,  Naomi Fukumaki ,  Yoshitake Kato

发明人： Tomohisa Iino ,  Naomi Fukumaki ,  Yoshitake Kato

IPC分类号： C23C16/54

CPC分类号： C23C16/405 ,  C23C16/45536 ,  C23C16/45548 ,  C23C16/45563 ,  C23C16/45578

摘要： An atomic layer deposition apparatus includes: a metal source gas supply tube, disposed in a side of a wafer to extend over the entire surface of the wafer, and capable of being supplied with a source gas from a first end to a second end; and an active gas supply tube, disposed in a side of a wafer to extend over the entire surface of the wafer, and capable of being supplied with a source gas from a first end to a second end, wherein the active gas supply tube is provided with a plurality of gas blow openings for blowing the active gas that is active over the wafer, and wherein the gas blow openings are disposed with gradually reduced inter-opening distances as being further from the first end to the second end of the active gas supply tube.

摘要翻译： 原子层沉积装置包括：金属源气体供应管，设置在晶片的一侧以在晶片的整个表面上延伸，并且能够从第一端向第二端供应源气体; 以及活性气体供给管，其设置在晶片的一侧以在所述晶片的整个表面上延伸，并且能够从第一端向第二端供给源气体，其中，设置所述活性气体供给管 具有用于吹送在晶片上有效的活性气体的多个气体吹入口，并且其中气体吹入口设置成随着活性气体供应的第一端至第二端的逐渐减小的开启间距 管。

公开(公告)号：US09142609B2

公开(公告)日：2015-09-22

申请号：US12929287

申请日：2011-01-12

申请人： Youichi Yamamoto ,  Naomi Fukumaki ,  Misato Sakamoto ,  Yoshitake Kato

发明人： Youichi Yamamoto ,  Naomi Fukumaki ,  Misato Sakamoto ,  Yoshitake Kato

IPC分类号： H01L27/108 ,  H01L29/92 ,  H01L49/02 ,  H01L21/285 ,  H01L21/768

CPC分类号： H01L28/60 ,  H01L21/28088 ,  H01L21/28562 ,  H01L21/28568 ,  H01L21/31 ,  H01L21/76856 ,  H01L27/1085 ,  H01L28/91 ,  H01L29/517

摘要： A semiconductor device has a capacitor element in which a capacitance dielectric film is disposed between an upper electrode film (upper electrode film, an upper electrode film) and a lower electrode film, and the lower electrode film has polycrystalline titanium nitride at least to a portion in contact with the capacitance dielectric film.

摘要翻译： 半导体器件具有电容器元件，其中电容电介质膜设置在上电极膜（上电极膜，上电极膜）和下电极膜之间，并且下电极膜具有至少一部分的多晶氮化钛 与电容电介质膜接触。

公开(公告)号：US20110169132A1

公开(公告)日：2011-07-14

申请号：US12929287

申请日：2011-01-12

申请人： Youichi Yamamoto ,  Naomi Fukumaki ,  Misato Sakamoto ,  Yoshitake Kato

发明人： Youichi Yamamoto ,  Naomi Fukumaki ,  Misato Sakamoto ,  Yoshitake Kato

IPC分类号： H01L29/92 ,  H01L21/02

CPC分类号： H01L28/60 ,  H01L21/28088 ,  H01L21/28562 ,  H01L21/28568 ,  H01L21/31 ,  H01L21/76856 ,  H01L27/1085 ,  H01L28/91 ,  H01L29/517

摘要： A semiconductor device has a capacitor element in which a capacitance dielectric film is disposed between an upper electrode film (upper electrode film, an upper electrode film) and a lower electrode film, and the lower electrode film has polycrystalline titanium nitride at least to a portion in contact with the capacitance dielectric film.

摘要翻译： 半导体器件具有电容器元件，其中电容电介质膜设置在上电极膜（上电极膜，上电极膜）和下电极膜之间，并且下电极膜具有至少一部分的多晶氮化钛 与电容电介质膜接触。

公开(公告)号：US20060017090A1

公开(公告)日：2006-01-26

申请号：US11180675

申请日：2005-07-14

申请人： Naomi Fukumaki ,  Yoshitake Kato ,  Ken Inoue

发明人： Naomi Fukumaki ,  Yoshitake Kato ,  Ken Inoue

IPC分类号： H01L29/94

CPC分类号： H01L28/75 ,  H01L28/91

摘要： A semiconductor device includes a cylinder-shaped capacitor. The capacitor includes a second insulating layer formed with a recessed portion formed on a semiconductor substrate, a cylinder shaped lower electrode formed in the recessed portion, a capacitance layer formed on the lower electrode, and an upper electrode formed on the capacitance layer. The upper electrode includes a first metal layer formed by PVD and a second metal layer formed thereafter by CVD, and the cylinder sidewall of the first metal layer has a thickness of 2 nm or less.

摘要翻译： 半导体器件包括圆柱形电容器。 电容器包括形成有形成在半导体基板上的凹部的第二绝缘层，形成在凹部中的圆筒形下电极，形成在下电极上的电容层，以及形成在电容层上的上电极。 上电极包括由PVD形成的第一金属层和随后通过CVD形成的第二金属层，并且第一金属层的气缸侧壁的厚度为2nm以下。

公开(公告)号：US08440521B2

公开(公告)日：2013-05-14

申请号：US13067788

申请日：2011-06-27

申请人： Naomi Fukumaki ,  Eiji Hasegawa ,  Toshihiro Iizuka ,  Ichiro Yamamoto

发明人： Naomi Fukumaki ,  Eiji Hasegawa ,  Toshihiro Iizuka ,  Ichiro Yamamoto

IPC分类号： H01L21/3105

CPC分类号： H01L21/823857 ,  H01L21/823842

摘要： A method of manufacturing a semiconductor device having a p-type field effect transistor and an n-type field effect transistor includes the steps of: forming an interface insulating layer and a high-permittivity layer on a substrate in the stated order; forming a pattern of a sacrifice layer on the high-permittivity layer; forming a metal-containing film containing metal elements therein on the high-permittivity layer in a first region where the sacrifice layer is formed and a second region where no sacrifice layer is formed; introducing the metal elements into an interface between the interface insulating layer and the high-permittivity layer in the second region by conducting a heat treatment; and removing the sacrifice layer by wet etching, wherein in the removing step, the sacrifice layer is etched easily more than the high-permittivity layer. With this configuration, the semiconductor device excellent in reliability is obtained.

摘要翻译： 制造具有p型场效应晶体管和n型场效应晶体管的半导体器件的方法包括以下步骤：按照所述顺序在衬底上形成界面绝缘层和高电容率层; 在高电介质层上形成牺牲层的图案; 在形成有牺牲层的第一区域和形成牺牲层的第二区域的高介电常数层上形成含有金属元素的含金属膜; 通过进行热处理，将金属元素引入第二区域中的界面绝缘层与高电容率层之间的界面; 并且通过湿法蚀刻去除牺牲层，其中在去除步骤中，牺牲层比高介电常数层容易蚀刻。 由此，能够获得可靠性优异的半导体装置。

公开(公告)号：US06773506B2

公开(公告)日：2004-08-10

申请号：US10162728

申请日：2002-06-04

申请人： Naoki Nakamura ,  Naomi Fukumaki ,  Takayuki Abe

发明人： Naoki Nakamura ,  Naomi Fukumaki ,  Takayuki Abe

IPC分类号： C30B2502

CPC分类号： C23C16/52 ,  C23C16/44 ,  H01L21/31604 ,  H01L21/3185

摘要： A thin film producing method in which the wafer film forming processing for a wafer to be a product may be carried out efficiently to shorten the processing time and to raise the operating ratio of the device. In a thin film deposition method using a single wafer processing for forming a thin film by chemical reaction under heat, a pseudo-process is provided which operates to suppress variations in the film thickness caused by the temperature in a reaction chamber 11. This pseudo process is the pre-heating processing of heating the reaction chamber 11 before actually charging the wafer W into the reaction chamber 11.

摘要翻译： 可以有效地进行用于制造晶片的晶片成膜处理以缩短处理时间并提高装置的操作比的薄膜制造方法。 在使用通过加热下的化学反应形成薄膜的单晶片处理的薄膜沉积方法中，提供了用于抑制由反应室11中的温度引起的膜厚度变化的伪工艺。该伪工艺 是在将晶片W实际装入反应室11之前加热反应室11的预热处理。