摘要:
Provided is a solid-state image pickup device capable of suppressing deterioration of characteristic caused due to an antireflection film itself absorbing a light. In the solid-state image pickup device of the present invention, a plurality of color filters 8a, 8b, and 8c having spectral characteristics, respectively, different from each other are provided so as to correspond to a plurality of light reception sections 2, respectively, aligned on a semiconductor substrate 1. Further, a plurality of microlenses 10 are provided above the plurality of color filters 8a, 8b, and 8c, respectively. A plurality of antireflection films 11a are selectively formed on surfaces of the microlenses 10 provided above color filters 8b each having a predetermined spectral characteristic.
摘要:
Provided is a solid-state image pickup device capable of suppressing deterioration of characteristic caused due to an antireflection film itself absorbing a light. In the solid-state image pickup device of the present invention, a plurality of color filters 8a, 8b, and 8c having spectral characteristics, respectively, different from each other are provided so as to correspond to a plurality of light reception sections 2, respectively, aligned on a semiconductor substrate 1. Further, a plurality of microlenses 10 are provided above the plurality of color filters 8a, 8b, and 8c, respectively. A plurality of antireflection films 11a are selectively formed on surfaces of the microlenses 10 provided above color filters 8b each having a predetermined spectral characteristic.
摘要:
Provided is a manufacturing method of a solid-state imaging device, which is able to realize a solid-state imaging device whose reflection prevention coating is even and that does not have image noise in case of adopting a spincoating method in applying a material of the reflection prevention coating onto microlenses of the solid-state imaging device. In the solid-state imaging device 1 according to the present invention, a barrier wall pattern 7 is formed, as a step alleviating structure, in dicing areas 5X formed between adjacent imaging areas 9. The barrier wall pattern 7 has a rectangular sectional form. With use of the barrier wall pattern 7 in the spincoating method, reflection prevention coating 8 is coated onto the microlenses 6 more evenly than in conventional cases.
摘要:
A light receiving region 21 and a floating diffusion region 22 are formed apart from each other in a semiconductor substrate 20 (S11), translucent adhesive 31 is applied to an area corresponding to the light receiving region 21 on the semiconductor substrate 20 (S22), and a translucent plate 30 is attached to the semiconductor substrate 20 on which the translucent adhesive 31 has been applied (S23). In this semiconductor manufacturing process, before the translucent adhesive 31 is applied, a dam member 24 is formed on the semiconductor substrate 20 so as to prevent the translucent adhesive 31 from flowing into an area corresponding to the floating diffusion region 22 on the semiconductor substrate 20 (S18).
摘要:
A solid state imaging element including light receiving elements and microlenses is placed in a recess of a ceramic package. A black resin fills space between the ceramic package and the solid state imaging element.
摘要:
Provided is a manufacturing method of a solid-state imaging device, which is able to realize a solid-state imaging device whose reflection prevention coating is even and that does not have image noise in case of adopting a spincoating method in applying a material of the reflection prevention coating onto microlenses of the solid-state imaging device. In the solid-state imaging device 1 according to the present invention, a barrier wall pattern 7 is formed, as a step alleviating structure, in dicing areas 5X formed between adjacent imaging areas 9. The barrier wall pattern 7 has a rectangular sectional form. With use of the barrier wall pattern 7 in the spincoating method, reflection prevention coating 8 is coated onto the microlenses 6 more evenly than in conventional cases.
摘要:
A solid state imaging device includes: a solid state imaging element including a light receiving element, a microlens formed above the light receiving element, a first transparent layer formed on the microlens and a second transparent layer formed on or above the microlens and harder than the first transparent layer; a transparent component formed above the second transparent layer; and an adhesive layer for bonding the second transparent layer and the transparent component. The hard second transparent layer prevents the occurrence of scratches during a dicing step.
摘要:
A solid-state image sensing device comprises: a light receiving unit for receiving light; a microlens formed above the light receiving unit; a fluorine-containing resin material layer formed on the microlens; and a transparent substrate provided over the fluorine-containing resin material layer. A resin layer adheres the fluorine-containing resin material layer and the transparent substrate.
摘要:
A solid state imaging device includes: a solid state imaging element including a light receiving element, a microlens formed above the light receiving element, a first transparent layer formed on the microlens and a second transparent layer formed on or above the microlens and harder than the first transparent layer; a transparent component formed above the second transparent layer; and an adhesive layer for bonding the second transparent layer and the transparent component. The hard second transparent layer prevents the occurrence of scratches during a dicing step.
摘要:
A solid-state image sensing device comprises: a light receiving unit for receiving light; a microlens formed above the light receiving unit; a fluorine-containing resin material layer formed on the microlens; and a transparent substrate provided over the fluorine-containing resin material layer. A resin layer adheres the fluorine-containing resin material layer and the transparent substrate.