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    Cu-Ga Alloy Sputtering Target and Method for Producing Same
    3.
    发明申请
    Cu-Ga Alloy Sputtering Target and Method for Producing Same 审中-公开
    Cu-Ga合金溅射靶及其制造方法

    公开(公告)号：US20140001039A1

    公开(公告)日：2014-01-02

    申请号：US14004289

    申请日：2012-07-06

    申请人： Tomoya Tamura ,  Masaru Sakamoto

    发明人： Tomoya Tamura ,  Masaru Sakamoto

    IPC分类号： C23C14/34

    CPC分类号： C23C14/3414 ,  B22D11/004 ,  C22C9/00 ,  C22F1/00 ,  C22F1/08

    摘要： The purpose of the invention is to provide a sputtering target formed from a Cu—Ga alloy having a Ga composition of 29 at % or more.[Problem] Since a Cu—Ga alloy becomes a brittle γ phase-single phase structure when the Ga composition becomes 29 at % or more, it cannot be subject to processes such as rolling and forging. Accordingly, the crystal grain size of the cast structure must be small and uniform so that the cast structure can be used as is.[Solution] It is possible to produce a melted and cast Cu—Ga alloy sputtering target containing 29 to 42.6 at % of Ga, and remainder being Cu and unavoidable impurities by continuously solidifying the Cu—Ga alloy sputtering target under solidifying conditions of a constant cooling rate or higher, wherein an average crystal grain size of a sputter front face is 3 mm or less, and a cross section structure of the target is a columnar structure that has grown in a direction from the sputter front face toward a center plane which is parallel to a sputter face.

    摘要翻译： 本发明的目的是提供一种由Ga组成为29原子％以上的Cu-Ga合金形成的溅射靶。 [问题]由于当Ga成分为29原子％以上时，Cu-Ga合金成为脆性γ相 - 单相结构，因此不能进行轧制和锻造等工序。 因此，铸造结构的晶粒尺寸必须小且均匀，从而可以直接使用铸造结构。 [解决方案]通过在恒定的固化条件下连续固化Cu-Ga合金溅射靶，可以制造含有29〜42.6at％的Ga的熔融铸造的Cu-Ga合金溅射靶，余量为Cu和不可避免的杂质 冷却速度或更高，其中溅射前面的平均晶粒尺寸为3mm以下，靶的截面结构是在从溅射前面朝向中心面的方向上生长的柱状结构， 平行于溅射面。

    Cu-Ga Target, Method of Producing Same, Light-absorbing Layer Formed from Cu-Ga Based Alloy Film, and CIGS System Solar Cell Having the Light-absorbing Layer
    6.
    发明申请
    Cu-Ga Target, Method of Producing Same, Light-absorbing Layer Formed from Cu-Ga Based Alloy Film, and CIGS System Solar Cell Having the Light-absorbing Layer 审中-公开
    Cu-Ga靶及其制造方法，由Cu-Ga系合金膜形成的吸光层和具有光吸收层的CIGS系太阳能电池

    公开(公告)号：US20130319527A1

    公开(公告)日：2013-12-05

    申请号：US13988363

    申请日：2011-08-10

    申请人： Tomoya Tamura ,  Hiroyoshi Yamamoto ,  Masaru Sakamoto

    发明人： Tomoya Tamura ,  Hiroyoshi Yamamoto ,  Masaru Sakamoto

    IPC分类号： C23C14/34 ,  H01L31/0272 ,  C22C28/00 ,  B22F3/14 ,  C22C9/00

    CPC分类号： H01L31/0272 ,  B22F3/14 ,  B22F9/04 ,  B22F2998/10 ,  C22C1/0425 ,  C22C9/00 ,  C22C28/00 ,  C23C14/3414 ,  H01L31/0322 ,  H01L31/18 ,  Y02E10/541 ,  Y02P70/521

    摘要： A Cu—Ga alloy sintered-compact sputtering target having a Ga concentration of 40 to 50 at % and Cu as the balance, wherein the sintered-compact sputtering target is characterized in that the relative density is 80% or higher, and the compositional deviation of the Ga concentration is within ±0.5 at % of the intended composition. A method of producing a Cu—Ga alloy sintered-compact sputtering target having a Ga concentration of 40 to 50 at % and Cu as the balance, wherein the method thereof is characterized in that Cu and Ga raw materials are melted and cooled/pulverized to produce a Cu—Ga alloy raw material powder, and the obtained material powder is further hot-pressed with a retention temperature being between the melting point of the mixed raw material powder and a temperature 15° C. lower than the melting point and with a pressure of 400 kgf/cm2 or more applied to the sintered mixed raw material powder. Provided are a sputtering target having very low compositional deviation and high density; a method of producing the target; a light-absorbing layer having a Cu—Ga based alloy film; and a CIGS solar cell including the light-absorbing layer.

    摘要翻译： Ga浓度为40〜50原子％的Cu-Ga合金烧结致密溅射靶，其余为Cu，其特征在于，相对密度为80％以上，成分偏差 的Ga浓度在所需组成的±0.5at％以内。 将Ga浓度为40〜50原子％，Cu作为余量的Cu-Ga合金烧结体型溅射靶的制造方法，其特征在于，将Cu和Ga原料熔融冷却/粉碎至 生成Cu-Ga合金原料粉末，将所得材料粉末进一步热压，保持温度在混合原料粉末的熔点和低于熔点15℃的温度之间， 对烧结的混合原料粉末施加400kgf / cm 2以上的压力。 提供具有非常低的组成偏差和高密度的溅射靶; 生产目标的方法; 具有Cu-Ga基合金膜的光吸收层; 以及包括光吸收层的CIGS太阳能电池。

    Inspection apparatus, inspection method, and manufacturing method of pattern substrate
    10.
    发明授权
    Inspection apparatus, inspection method, and manufacturing method of pattern substrate 有权
    图案基板的检查装置，检查方法和制造方法

    公开(公告)号：US07548309B2

    公开(公告)日：2009-06-16

    申请号：US12025521

    申请日：2008-02-04

    申请人： Haruhiko Kusunose ,  Tomoya Tamura

    发明人： Haruhiko Kusunose ,  Tomoya Tamura

    IPC分类号： G01N21/88

    CPC分类号： G01N21/9501 ,  G01N21/956

    摘要： A defect inspection apparatus according to an aspect of the present invention includes a laser source generating light beam, an objective lens focusing the light beam emitted from the laser source to form a light spot on a surface of a sample W, a prism dividing the light beam reflected from the sample into two light beams, two light receiving elements receiving the light beams divided by the prism to output output signals based on the beam amount of the received beams, and a real defect determination part determining a candidate detect as a real defect when output signals from the two light receiving elements are detected substantially at the same time.

    摘要翻译： 根据本发明的一个缺点检查装置包括产生光束的激光源，将从激光源发射的光束聚焦以在样品W的表面上形成光斑的物镜，将光分开的棱镜 从样品反射的光束分成两束光束，两个光接收元件接收由棱镜分割的光束，以基于接收光束的光束量输出输出信号;以及确定候选检测作为实际缺陷的实际缺陷确定部件 当基本上同时检测来自两个光接收元件的输出信号时。