Light emitting substrate having photonic crystal structure and image display apparatus including the same
    1.
    发明授权
    Light emitting substrate having photonic crystal structure and image display apparatus including the same 失效
    具有光子晶体结构的发光基板和包括其的图像显示装置

    公开(公告)号:US08564191B2

    公开(公告)日:2013-10-22

    申请号:US13152568

    申请日:2011-06-03

    IPC分类号: H01L51/50 H01L33/00

    CPC分类号: B82Y30/00 B82Y20/00

    摘要: A light emitting substrate configured to enhance luminance of an image display apparatus is disclosed. The light emitting substrate includes a transparent substrate, a photonic crystal structure, a transparent anode, a light emitting layer having a diffuse reflectance of 0.04% or less and having a side reflecting member at a side thereof. The photonic crystal structure, the transparent anode, and the light emitting layer are successively laminated in this order on the transparent substrate. The light emitting substrate satisfies the following Condition 1 or Condition 2: Condition 1: 95≦c, and 40≦a

    摘要翻译: 公开了一种被配置为增强图像显示装置的亮度的发光基板。 发光基板包括透明基板,光子晶体结构,透明阳极,具有0.04%以下的漫反射率的发光层,在侧面具有侧面反射部件。 将光子晶体结构,透明阳极和发光层依次层叠在透明基板上。 发光基板满足以下条件1或条件2:条件1:95 @ c和40 @ a <100条件2:85 @ c <95和80 @ a <100其中a是光子的相对面积 晶体结构与发光层的结构,c是侧反射部件的反射率。

    LIGHT EMITTING SUBSTRATE AND IMAGE DISPLAY APPARATUS INCLUDING THE SAME
    2.
    发明申请
    LIGHT EMITTING SUBSTRATE AND IMAGE DISPLAY APPARATUS INCLUDING THE SAME 失效
    发光基板和图像显示装置,包括它们

    公开(公告)号:US20110304265A1

    公开(公告)日:2011-12-15

    申请号:US13152568

    申请日:2011-06-03

    CPC分类号: B82Y30/00 B82Y20/00

    摘要: A light emitting substrate configured to enhance luminance of an image display apparatus is disclosed. The light emitting substrate includes a transparent substrate, a photonic crystal structure, a transparent anode, a light emitting layer having a diffuse reflectance of 0.04% or less and having a side reflecting member at a side thereof. The photonic crystal structure, the transparent anode, and the light emitting layer are successively laminated in this order on the transparent substrate. The light emitting substrate satisfies the following Condition 1 or Condition 2: Condition 1: 95≦c, and 40≦a

    摘要翻译: 公开了一种被配置为增强图像显示装置的亮度的发光基板。 发光基板包括透明基板,光子晶体结构,透明阳极,具有0.04%以下的漫反射率的发光层,在侧面具有侧面反射部件。 将光子晶体结构,透明阳极和发光层依次层叠在透明基板上。 发光基板满足以下条件1或条件2:条件1:95&nlE; c和40&nlE; a <100条件2:85&nlE; c <95和80&nlE; a <100其中a是光子的相对面积 晶体结构与发光层的结构,c是侧反射部件的反射率。

    PLASMA PROCESSING APPARATUS
    3.
    发明申请
    PLASMA PROCESSING APPARATUS 审中-公开
    等离子体加工设备

    公开(公告)号:US20100319854A1

    公开(公告)日:2010-12-23

    申请号:US12546783

    申请日:2009-08-25

    IPC分类号: H01L21/3065

    摘要: In a plasma processing apparatus conducting surface processing on a sample to be processed with plasma, an upper electrode includes a shower plate having first gas holes bored through it, a conductor plate disposed at back of the shower plate and having second gas holes bored through it, an insulation plate disposed in a center part of the conductor plate and having third gas holes bored through it, and an antenna basic member unit disposed at back of the conductor plate and having a temperature control function unit and a gass distribution unit. First and second minute gaps are formed in a radial direction at an interface between the shower plate and the insulation plate, and at an interface between the insulation plate and the conductor plate, respectively. Centers of the first gas holes are shifted from centers of the third gas holes in a circumference or radial direction.

    摘要翻译: 在对等离子体处理的样品进行表面处理的等离子体处理装置中,上部电极包括具有穿过其的第一气孔的喷淋板,布置在喷淋板背面的导体板,并且具有穿过其的第二气孔 设置在导体板的中心部分并具有穿过其的第三气孔的绝缘板,以及设置在导体板背面并具有温度控制功能单元和气体分配单元的天线基座部件单元。 在喷淋板和绝缘板之间的界面处以及在绝缘板和导体板之间的界面处,分别在径向上形成第一和第二微小间隙。 第一气孔的中心在第三气孔的中心沿周向或径向偏移。

    Radiation detecting apparatus, scintillator panel, and radiographing system
    4.
    发明授权
    Radiation detecting apparatus, scintillator panel, and radiographing system 有权
    辐射检测装置,闪烁体面板和射线照相系统

    公开(公告)号:US07256404B2

    公开(公告)日:2007-08-14

    申请号:US11200025

    申请日:2005-08-10

    IPC分类号: G01T1/20

    CPC分类号: G01T1/2018

    摘要: A radiation detecting apparatus having: a substrate; a phosphor layer which is formed on a principal plane of the substrate and converts a wavelength of a radiation; and a phosphor protective member including a phosphor protective layer which covers the phosphor layer and is adhered to the substrate, wherein the phosphor protective layer is made of a hot melt resin and an upper surface and a side surface of the phosphor layer and at least a part of at least one side surface of the substrate are covered with the phosphor protective layer. Thus, a moisture-proofing effect for penetration of the moisture from an interface between the phosphor layer and the substrate on the side surface side of the substrate can be improved. Further, by using the hot melt resin for the phosphor protective layer, simplification of manufacturing steps, remarkable reduction in the number of working steps, and remarkable reduction in costs of a product can be accomplished.

    摘要翻译: 一种放射线检测装置,具有:基板; 荧光体层,其形成在所述基板的主平面上并转换辐射的波长; 以及荧光体保护层,其包括覆盖所述荧光体层并附着在所述基板上的荧光体保护层,所述荧光体保护层由热熔树脂和所述荧光体层的上表面和侧面形成,并且至少 衬底的至少一个侧表面的一部分被荧光体保护层覆盖。 因此,能够提高从基板的侧面侧的荧光体层和基板的界面渗入水分的防湿效果。 此外,通过使用热熔树脂作为荧光体保护层,可以实现制造步骤的简化,工序数量的显着减少以及产品成本的显着降低。

    Radiation detecting apparatus, producing method therefor and radiation image pickup system
    5.
    发明申请
    Radiation detecting apparatus, producing method therefor and radiation image pickup system 失效
    辐射检测装置及其制造方法和放射线摄像系统

    公开(公告)号:US20060033031A1

    公开(公告)日:2006-02-16

    申请号:US11198229

    申请日:2005-08-08

    IPC分类号: G01T1/20

    CPC分类号: G01T1/2018

    摘要: A radiation detection apparatus including a sensor panel, having a photoreceiving unit constituted of plural photoelectric converting elements two-dimensionally arranged on a substrate and electrical connecting portions provided in an external portion of the photoreceiving unit and electrically connected to the photoelectric converting elements of respective rows or columns of the photoreceiving unit, a phosphor layer provided at least on the photoreceiving unit for converting a radiation into a light detectable by the photoelectric converting element, and a phosphor protective member covering the phosphor layer and in contact with the sensor panel, characterized in that the phosphor protective member includes a frame member provided between the phosphor layer and the electric connecting portion on the sensor panel, and a phosphor protective layer covering an upper surface of the phosphor layer and provided in close contact with an upper surface of the frame member. This configuration allows to prevent a discharge of an electrostatic charge accumulated on the sensor panel, thereby providing a stable radiation detection apparatus with a high production yield.

    摘要翻译: 一种辐射检测装置,包括传感器面板,具有由二维布置在基板上的多个光电转换元件构成的光接收单元和设置在所述光接收单元的外部的电连接部分,并电连接到各行的光电转换元件 或列,至少设置在光接收单元上用于将辐射转换成可由光电转换元件检测的光的荧光体层和覆盖荧光体层并与传感器面板接触的荧光体保护构件,其特征在于, 荧光体保护构件包括设置在荧光体层和传感器面板上的电连接部分之间的框架构件,以及覆盖荧光体层的上表面并且与框架构件的上表面紧密接触地设置的荧光体保护层 。 这种结构允许防止积聚在传感器面板上的静电电荷的放电,从而提供具有高产量的稳定的放射线检测装置。

    Plasma processing apparatus, protecting layer therefor and installation of protecting layer
    6.
    发明申请
    Plasma processing apparatus, protecting layer therefor and installation of protecting layer 失效
    等离子体处理装置,其保护层和安装保护层

    公开(公告)号:US20050045107A1

    公开(公告)日:2005-03-03

    申请号:US10963575

    申请日:2004-10-14

    IPC分类号: C23C14/56 H01J37/32 C23C16/00

    CPC分类号: H01J37/32559 C23C14/568

    摘要: The following plasma processing apparatus can suppress the production of contaminants from the plasma processing chamber of the apparatus and an article in the plasma processing chamber which are allowed to act as ground electrodes: a plasma processing apparatus in which a workpiece is processed by creating a plasma in the processing chamber, and one or more surfaces made of a grounded metal electric conductor which come into contact with the plasma in the plasma processing chamber are coated with a plasma-resistant polymeric material having a relationship between relative dielectric constant kε and thickness t (μm) of t/kε

    摘要翻译: 以下等离子体处理装置能够抑制来自装置的等离子体处理室和允许作为接地电极的等离子体处理室中的物品的污染物的产生:其中通过产生等离子体处理工件的等离子体处理装置 在处理室中,并且与等离子体处理室中与等离子体接触的由接地金属导电体制成的一个或多个表面涂覆有等离子体耐久性聚合材料,其具有相对介电常数kepsilon和厚度t之间的关系( 妈妈)的t / kepsilon <300,或由等离子体和吸水性树脂材料形成的保护层通过其膨胀然后收缩而固定到处理室中的物品的外表面。

    Plasma processing apparatus
    9.
    发明授权
    Plasma processing apparatus 有权
    等离子体处理装置

    公开(公告)号:US08186300B2

    公开(公告)日:2012-05-29

    申请号:US12370215

    申请日:2009-02-12

    CPC分类号: H01J37/32935

    摘要: A plasma processing apparatus for processing a surface of a to-be-processed substrate includes a processing chamber, a first electrode provided in the processing chamber, a second electrode arranged in opposition to the first electrode, a main power source for supplying the first or second electrode with power for generating a plasma, a biasing power source for supplying the second or first electrode with biasing power, a gas supplying unit for supplying a processing gas into the processing chamber and a control unit for controlling the main power source, the biasing power source and the gas supplying unit. The control unit performs a control such that, during a time of transition from a stationary state of plasma, in which a plasma processing is to be carried out, to a plasma quenching, an output of the main power source is kept not larger than an output of the biasing power source.

    摘要翻译: 一种用于处理被处理衬底的表面的等离子体处理装置包括处理室,设置在处理室中的第一电极,与第一电极相对布置的第二电极,用于供应第一或 具有用于产生等离子体的功率的第二电极,用于向第二或第一电极供应偏压功率的偏置电源,用于将处理气体供应到处理室的气体供应单元和用于控制主电源的控制单元 电源和气体供应单元。 控制单元执行控制,使得在从要进行等离子体处理的等离子体的静止状态转变到等离子体淬火的时间期间,主电源的输出保持不大于 输出偏置电源。

    Plasma processing method and plasma processing device
    10.
    发明授权
    Plasma processing method and plasma processing device 失效
    等离子体处理方法和等离子体处理装置

    公开(公告)号:US08163652B2

    公开(公告)日:2012-04-24

    申请号:US12199028

    申请日:2008-08-27

    IPC分类号: H01L21/302

    摘要: A plasma processing method using plasma includes steps of applying current to a coil and introducing gas into a processing chamber, applying a bias power that does not generate plasma, applying a source power to generate plasma so that a plasma density distribution is high above an outer circumference of a semiconductor wafer and low above a center of the semiconductor wafer, and forming a shape of a sheath layer having a positive ion space charge directly above the semiconductor wafer so as to be convex in an upper direction from the semiconductor wafer, thereby eliminating foreign particles trapped in a boundary of the sheath layer having a positive ion space charge directly above the semiconductor wafer, generating plasma for processing the semiconductor wafer under a condition different from the conditions of the previous steps.

    摘要翻译: 使用等离子体的等离子体处理方法包括以下步骤:向线圈施加电流并将气体引入处理室,施加不产生等离子体的偏置功率,施加源功率以产生等离子体,使得等离子体密度分布高于外部 半导体晶片的周围,并且低于半导体晶片的中心,并且在半导体晶片的正上方形成具有正离子空间电荷的鞘层的形状,以从半导体晶片向上方凸出,从而消除 杂质颗粒捕获在具有正离子空间电荷的鞘层的边界上,直接位于半导体晶片上方,产生用于在与前述步骤的条件不同的条件下处理半导体晶片的等离子体。