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    Method for manufacturing semiconductor light emitting device and semiconductor light emitting device wafer
    1.
    发明授权
    Method for manufacturing semiconductor light emitting device and semiconductor light emitting device wafer 有权
    制造半导体发光器件和半导体发光器件晶片的方法

    公开(公告)号：US09006013B2

    公开(公告)日：2015-04-14

    申请号：US13405634

    申请日：2012-02-27

    申请人： Toru Gotoda ,  Toshiyuki Oka ,  Shinya Nunoue ,  Kotaro Zaima ,  Hiroshi Ono ,  Hajime Nago

    发明人： Toru Gotoda ,  Toshiyuki Oka ,  Shinya Nunoue ,  Kotaro Zaima ,  Hiroshi Ono ,  Hajime Nago

    IPC分类号： H01L21/00 ,  H01L21/30 ,  H01L21/46 ,  H01L33/00 ,  H01L21/20 ,  H01L33/20 ,  H01S5/02 ,  H01S5/323

    CPC分类号： H01L33/007 ,  H01L21/2011 ,  H01L33/0079 ,  H01L33/20 ,  H01S5/0213 ,  H01S5/0217 ,  H01S5/32341

    摘要： According to one embodiment, a method is disclosed for manufacturing a semiconductor light emitting device. The method can include forming a nitride semiconductor layer including a light emitting layer on a first substrate having an unevenness, bonding the nitride layer to a second substrate, and separating the first substrate from the nitride layer by irradiating the nitride layer with light. The forming the nitride layer includes leaving a cavity in a space inside a depression of the unevenness while forming a thin film on the depression. The film includes a same material as part of the nitride layer. The separating includes causing the film to absorb part of the light so that intensity of the light applied to a portion of the nitride layer facing the depression is made lower than intensity of the light applied to a portion facing a protrusion of the unevenness.

    摘要翻译： 根据一个实施例，公开了一种用于制造半导体发光器件的方法。 该方法可以包括在具有不平坦度的第一衬底上形成包括发光层的氮化物半导体层，将氮化物层接合到第二衬底，并且通过用光照射氮化物层将第一衬底与氮化物层分离。 形成氮化物层包括在凹凸的凹陷内的空间中留下空腔，同时在凹陷上形成薄膜。 该膜包括与氮化物层的一部分相同的材料。 分离包括使膜吸收部分光，使得施加到面向凹陷的氮化物层的一部分的光的强度低于施加到面对凹凸的突出部的部分的光的强度。

    Semiconductor light emitting device and method for manufacturing the same
    5.
    发明授权
    Semiconductor light emitting device and method for manufacturing the same 有权
    半导体发光器件及其制造方法

    公开(公告)号：US08314437B2

    公开(公告)日：2012-11-20

    申请号：US12874425

    申请日：2010-09-02

    申请人： Kotaro Zaima ,  Toru Gotoda ,  Toshiyuki Oka ,  Shinya Nunoue

    发明人： Kotaro Zaima ,  Toru Gotoda ,  Toshiyuki Oka ,  Shinya Nunoue

    IPC分类号： H01L33/00

    CPC分类号： H01L33/06 ,  H01L21/18 ,  H01L33/04 ,  H01L33/22 ,  H01L33/24

    摘要： Certain embodiments provide a method for manufacturing a semiconductor light emitting device, including: providing a first stack film on a first substrate, the first stack film being formed by stacking a p-type nitride semiconductor layer, an active layer having a multiquantum well structure of a nitride semiconductor, and an n-type nitride semiconductor layer in this order; forming an n-electrode on an upper face of the n-type nitride semiconductor layer; and forming a concave-convex region on the upper face of the n-type nitride semiconductor layer by performing wet etching on the upper face of the n-type nitride semiconductor layer with the use of an alkaline solution, except for a region in which the n-electrode is formed.

    摘要翻译： 某些实施例提供了一种用于制造半导体发光器件的方法，包括：在第一衬底上提供第一堆叠膜，所述第一叠层膜通过堆叠p型氮化物半导体层，具有多量子阱结构的活性层 氮化物半导体和n型氮化物半导体层; 在n型氮化物半导体层的上表面上形成n电极; 并且通过使用碱性溶液在n型氮化物半导体层的上表面上进行湿式蚀刻，在n型氮化物半导体层的上表面上形成凹凸区域，除了其中 形成n电极。

    METHOD OF FABRICATING SEMICONDUCTOR LIGHT EMITTING DEVICE AND SEMICONDUCTOR LIGHT EMITTING DEVICE
    6.
    发明申请
    METHOD OF FABRICATING SEMICONDUCTOR LIGHT EMITTING DEVICE AND SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
    制造半导体发光器件和半导体发光器件的方法

    公开(公告)号：US20120056154A1

    公开(公告)日：2012-03-08

    申请号：US13037687

    申请日：2011-03-01

    申请人： Kotaro ZAIMA ,  Toru Gotoda ,  Toshiyuki Oka ,  Shinya Nunoue

    发明人： Kotaro ZAIMA ,  Toru Gotoda ,  Toshiyuki Oka ,  Shinya Nunoue

    IPC分类号： H01L33/06

    CPC分类号： H01L33/0079 ,  H01L33/20 ,  H01L33/22

    摘要： A method of fabricating semiconductor light emitting device forms a laminated film by laminating an n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer in order on a uneven main surface of a first substrate, forms a plurality of first electrodes, on an upper surface of the p-type nitride semiconductor layer, forms a first metal layer to cover surfaces of the plurality of first electrodes and the p-type nitride semiconductor layer, forms a second metal layer on an upper surface of the second substrate, joins the first and second metal layers by facing the first and second substrates, cuts the first substrate or forming a groove on the first substrate along a border of the light emitting element from a surface side opposite to the first metal layer on the first substrate, and irradiates a laser toward areas of the light emitting devices from a surface side opposite to the first metal layer on the first substrate to peel off the first substrate.

    摘要翻译： 通过在第一衬底的不平坦的主表面上依次层叠n型氮化物半导体层，有源层和p型氮化物半导体层，制造半导体发光器件的方法形成层压膜，形成多个第一 电极在p型氮化物半导体层的上表面上形成第一金属层以覆盖多个第一电极和p型氮化物半导体层的表面，在第二金属层的上表面上形成第二金属层 基板，通过面对第一和第二基板连接第一和第二金属层，切割第一基板或沿着发光元件的边界在第一基板上从第一金属层的与第一金属层的第一金属层相反的表面侧形成凹槽 并且从与第一基板上的第一金属层相反的表面侧将激光照射到发光器件的区域，以剥离第一基板。

    Method of fabricating semiconductor light emitting device and semiconductor light emitting device
    8.
    发明授权
    Method of fabricating semiconductor light emitting device and semiconductor light emitting device 有权
    制造半导体发光器件和半导体发光器件的方法

    公开(公告)号：US08470625B2

    公开(公告)日：2013-06-25

    申请号：US13037687

    申请日：2011-03-01

    申请人： Kotaro Zaima ,  Toru Gotoda ,  Toshiyuki Oka ,  Shinya Nunoue

    发明人： Kotaro Zaima ,  Toru Gotoda ,  Toshiyuki Oka ,  Shinya Nunoue

    IPC分类号： H01L33/18 ,  H01L33/06 ,  H01L21/268 ,  H01L21/428

    CPC分类号： H01L33/0079 ,  H01L33/20 ,  H01L33/22

    摘要： A method of fabricating semiconductor light emitting device forms a laminated film by laminating an n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer in order on a uneven main surface of a first substrate, forms a plurality of first electrodes, on an upper surface of the p-type nitride semiconductor layer, forms a first metal layer to cover surfaces of the plurality of first electrodes and the p-type nitride semiconductor layer, forms a second metal layer on an upper surface of the second substrate, joins the first and second metal layers by facing the first and second substrates, cuts the first substrate or forming a groove on the first substrate along a border of the light emitting element from a surface side opposite to the first metal layer on the first substrate, and irradiates a laser toward areas of the light emitting devices from a surface side opposite to the first metal layer on the first substrate to peel off the first substrate.

    摘要翻译： 通过在第一衬底的不平坦的主表面上依次层叠n型氮化物半导体层，有源层和p型氮化物半导体层，制造半导体发光器件的方法形成层压膜，形成多个第一 电极在p型氮化物半导体层的上表面上形成第一金属层以覆盖多个第一电极和p型氮化物半导体层的表面，在第二金属层的上表面上形成第二金属层 基板，通过面对第一和第二基板连接第一和第二金属层，切割第一基板或沿着发光元件的边界在第一基板上形成从第一基板上的第一金属层相反的表面侧的凹槽 并且从与第一基板上的第一金属层相反的表面侧将激光照射到发光器件的区域，以剥离第一基板。

    Semiconductor light emitting device and method for manufacturing the same
    9.
    发明授权
    Semiconductor light emitting device and method for manufacturing the same 有权
    半导体发光器件及其制造方法

    公开(公告)号：US08178891B2

    公开(公告)日：2012-05-15

    申请号：US12874475

    申请日：2010-09-02

    申请人： Kotaro Zaima ,  Toru Gotoda ,  Toshiyuki Oka ,  Shinya Nunoue

    发明人： Kotaro Zaima ,  Toru Gotoda ,  Toshiyuki Oka ,  Shinya Nunoue

    IPC分类号： H01L33/00

    CPC分类号： H01L33/22 ,  H01L33/04 ,  H01L33/06

    摘要： Certain embodiments provide a semiconductor light emitting device including: a first metal layer; a stack film including a p-type nitride semiconductor layer, an active layer, and an n-type nitride semiconductor layer; an n-electrode; a second metal layer; and a protection film protecting an outer circumferential region of the upper face of the n-type nitride semiconductor layer, side faces of the stack film, a region of an upper face of the second metal layer other than a region in contact with the p-type nitride semiconductor layer, and a region of an upper face of the first metal layer other than a region in contact with the second metal layer. Concavities and convexities are formed in a region of the upper face of the n-type nitride semiconductor layer, the region being outside the region in which the n-electrode is provided and being outside the regions covered with the protection film.

    摘要翻译： 某些实施例提供一种半导体发光器件，包括：第一金属层; 包括p型氮化物半导体层，有源层和n型氮化物半导体层的堆叠膜; n电极; 第二金属层; 以及保护膜，其保护所述n型氮化物半导体层的上表面的外周区域，所述堆叠膜的侧面，除了与所述p型膜接触的区域以外的所述第二金属层的上表面的区域， 氮化物半导体层以及与第二金属层接触的区域以外的第一金属层的上表面的区域。 在n型氮化物半导体层的上表面的区域形成凹凸，该区域位于设置有n电极的区域的外部，并且覆盖有保护膜的区域之外。

    SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME
    10.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
    半导体发光器件及其制造方法

    公开(公告)号：US20110215292A1

    公开(公告)日：2011-09-08

    申请号：US12874425

    申请日：2010-09-02

    申请人： Kotaro Zaima ,  Toru Gotoda ,  Toshiyuki Oka ,  Shinya Nunoue

    发明人： Kotaro Zaima ,  Toru Gotoda ,  Toshiyuki Oka ,  Shinya Nunoue

    IPC分类号： H01L33/04 ,  H01L21/18

    CPC分类号： H01L33/06 ,  H01L21/18 ,  H01L33/04 ,  H01L33/22 ,  H01L33/24

    摘要： Certain embodiments provide a method for manufacturing a semiconductor light emitting device, including: providing a first stack film on a first substrate, the first stack film being formed by stacking a p-type nitride semiconductor layer, an active layer having a multiquantum well structure of a nitride semiconductor, and an n-type nitride semiconductor layer in this order; forming an n-electrode on an upper face of the n-type nitride semiconductor layer; and forming a concave-convex region on the upper face of the n-type nitride semiconductor layer by performing wet etching on the upper face of the n-type nitride semiconductor layer with the use of an alkaline solution, except for a region in which the n-electrode is formed.

    摘要翻译： 某些实施例提供了一种用于制造半导体发光器件的方法，包括：在第一衬底上提供第一堆叠膜，所述第一叠层膜通过堆叠p型氮化物半导体层，具有多量子阱结构的活性层 氮化物半导体和n型氮化物半导体层; 在n型氮化物半导体层的上表面上形成n电极; 并且通过使用碱性溶液在n型氮化物半导体层的上表面上进行湿式蚀刻，在n型氮化物半导体层的上表面上形成凹凸区域，除了其中 形成n电极。