公开(公告)号：US20130164911A1

公开(公告)日：2013-06-27

申请号：US13404162

申请日：2012-02-24

申请人： Toru ITO ,  Hiroaki Ishimura ,  Akito Kouchi ,  Hayato Watanabe

发明人： Toru ITO ,  Hiroaki Ishimura ,  Akito Kouchi ,  Hayato Watanabe

IPC分类号： H01L21/762

CPC分类号： H01L21/76229 ,  H01L21/3065 ,  H01L21/30655

摘要： The present invention provides a plasma processing method in which sideetching and microloading can be suppressed in a plasma processing method of forming trenches with a mask having a minimum opening width of 20 nm or less. The plasma processing method of the present invention is characterized by including the steps of forming trenches by plasma etching, forming a nitride film on sidewalls of trenches using plasma, and forming an oxide film on sidewalls and bottom surfaces of the trenches using plasma.

摘要翻译： 本发明提供了一种等离子体处理方法，其中在利用具有最小开口宽度为20nm或更小的掩模形成沟槽的等离子体处理方法中可以抑制边缘和微加载。 本发明的等离子体处理方法的特征在于包括通过等离子体蚀刻形成沟槽的步骤，使用等离子体在沟槽的侧壁上形成氮化物膜，以及使用等离子体在沟槽的侧壁和底表面上形成氧化物膜。

公开(公告)号：US20100255612A1

公开(公告)日：2010-10-07

申请号：US12512094

申请日：2009-07-30

申请人： Yoshiharu INOUE ,  Hiroaki ISHIMURA ,  Hitoshi KOBAYASHI ,  Masunori ISHIHARA ,  Toru ITO ,  Toshiaki NISHIDA

发明人： Yoshiharu INOUE ,  Hiroaki ISHIMURA ,  Hitoshi KOBAYASHI ,  Masunori ISHIHARA ,  Toru ITO ,  Toshiaki NISHIDA

IPC分类号： H01L21/66 ,  H01L21/3065

CPC分类号： H01L21/3065

摘要： The invention provides a dry etching method capable of obtaining a good profile with little side etch without receiving the restriction of a micro loading effect. A dry etching method for etching a sample having formed on the surface thereof a pattern with an isolated portion and a dense portion using plasma comprises a first etching step using an etching gas containing a CF-based gas and a nitrogen gas in which an etching rate of a dense portion of the pattern is greater than the etching rate of the isolated portion of the mask pattern, and a second etching step in which the etching rate of the isolated portion of the pattern is greater than the etching rate of the dense portion of the pattern.

摘要翻译： 本发明提供了一种干蚀刻方法，其能够在没有受到微载荷效应的限制的情况下获得具有小侧蚀刻的良好轮廓。 使用等离子体蚀刻具有隔离部分和致密部分的图案的样品的干蚀刻方法包括使用包含CF基气体和氮气的蚀刻气体的第一蚀刻步骤，其中蚀刻速率 图案的致密部分的厚度大于掩模图案的隔离部分的蚀刻速率，以及第二蚀刻步骤，其中图案的隔离部分的蚀刻速率大于图案的密集部分的蚀刻速率 模式。

公开(公告)号：US20090134762A1

公开(公告)日：2009-05-28

申请号：US12260152

申请日：2008-10-29

申请人： Takuya SERITA ,  Toru ITO

发明人： Takuya SERITA ,  Toru ITO

IPC分类号： H01J61/40 ,  H01J5/00

CPC分类号： H01J61/34 ,  H01J61/82

摘要： An electric discharge lamp is provided. The electric discharge lamp includes a ceramic luminous tube; electrodes held by the ceramic luminous tube; a first outer tube which is made of glass and covers the ceramic luminous tube to form a first space between the ceramic luminous tube and the first outer tube; and a second outer tube which is made of glass and covers the first outer tube to form a second space between the first outer tube and the second outer tube. A vacuum is formed in the first space.

摘要翻译： 提供放电灯。 放电灯包括陶瓷发光管; 电极由陶瓷发光管保持; 第一外管，其由玻璃制成并覆盖陶瓷发光管，以在陶瓷发光管和第一外管之间形成第一空间; 以及由玻璃制成并覆盖第一外管以在第一外管和第二外管之间形成第二空间的第二外管。 在第一空间中形成真空。

公开(公告)号：US20130008609A1

公开(公告)日：2013-01-10

申请号：US13618587

申请日：2012-09-14

申请人： Chishio KOSHIMIZU ,  Naoki MATSUMOTO ,  Satoshi TANAKA ,  Toru ITO

发明人： Chishio KOSHIMIZU ,  Naoki MATSUMOTO ,  Satoshi TANAKA ,  Toru ITO

IPC分类号： C23F1/08

CPC分类号： H01J37/21 ,  H01J37/32091 ,  H01J37/32155 ,  H01J37/32165 ,  H01J37/32348 ,  H01J37/32449 ,  H01J37/32467 ,  H01J37/32642 ,  H01J2237/21 ,  H01J2237/334

摘要： A plasma processing apparatus includes a processing chamber, a first electrode and a second electrode disposed to face each other, a high frequency power supply unit for applying a high frequency power to either the first electrode or the second electrode, a processing gas supply unit for supplying a processing gas to a processing space, and a main dielectric member provided at a substrate mounting portion on a main surface of the first electrode. A focus ring is attached to the first electrode to cover a peripheral portion of the main surface of the first electrode and a peripheral dielectric member is provided in a peripheral portion on the main surface of the first electrode so that an electrostatic capacitance per unit area applied between the first electrode and the focus ring is smaller than that applied between the first electrode and the substrate by the main dielectric member.

摘要翻译： 等离子体处理装置包括处理室，第一电极和彼此相对配置的第二电极，用于向第一电极或第二电极施加高频电力的高频电源单元，用于 将处理气体供给到处理空间，以及设置在第一电极的主表面上的基板安装部的主电介质部件。 聚焦环安装在第一电极上以覆盖第一电极的主表面的周边部分，并且在第一电极的主表面的周边部分设置外围电介质构件，使得每单位面积的静电电容 在第一电极和聚焦环之间的距离小于通过主电介质构件施加在第一电极和衬底之间的位置。

公开(公告)号：US20120139414A1

公开(公告)日：2012-06-07

申请号：US13309781

申请日：2011-12-02

申请人： Toru ITO ,  Toshiaki TSUDA

发明人： Toru ITO ,  Toshiaki TSUDA

IPC分类号： H01J61/30

CPC分类号： H01J61/33 ,  H01J61/366 ,  H01J61/827

摘要： A vehicle discharge lamp includes: an arc tube including a light emitter, a cathode side fine tube and an anode side fine tube; a cathode side connecting rod; an anode side connecting rod; a cathode side electrode and an anode side electrode disposed within the arc tube. The anode side fine tube includes an expansion portion and an insertion portion formed continuously with the expansion portion, a portion of the anode side electrode is situated within the expansion portion with a clearance, the expansion portion includes a uniform diameter portion with its inside diameter set uniform in an anode side electrode's axial direction, the light emitter includes a flat portion with its axial direction set coincident with the anode side electrode's axial direction, and an inside diameter of the uniform diameter portion is set larger than that of the insertion portion and smaller than that of the flat portion.

摘要翻译： 车辆放电灯包括：发光管，包括发光体，阴极侧细管和阳极侧细管; 阴极侧连接杆; 阳极侧连接杆; 设置在电弧管内的阴极侧电极和阳极侧电极。 阳极侧细管包括膨胀部和与膨胀部连续形成的插入部，阳极侧电极的一部分以间隙位于膨胀部内，膨胀部包括均匀的直径部，其内径设定 阳极侧电极的轴向均匀，发光体包括其轴向设定为与阳极侧电极的轴向一致的平坦部分，并且均匀直径部分的内径设定为大于插入部的内径，并且较小 比平坦部分高。