利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

14 条记录 (耗时 0.023 秒)

    Semiconductor laser device
    1.
    发明授权
    Semiconductor laser device 失效
    半导体激光器件

    公开(公告)号：US5923690A

    公开(公告)日：1999-07-13

    申请号：US788511

    申请日：1997-01-24

    申请人： Masahiro Kume ,  Yuuzaburou Ban ,  Akihiko Ishibashi ,  Nobuyuki Uemura ,  Hidemi Takeisi ,  Isao Kidoguchi

    发明人： Masahiro Kume ,  Yuuzaburou Ban ,  Akihiko Ishibashi ,  Nobuyuki Uemura ,  Hidemi Takeisi ,  Isao Kidoguchi

    IPC分类号： H01S5/028 ,  H01S5/323 ,  H01S3/19

    CPC分类号： H01S5/32341 ,  H01S5/028

    摘要： A gallium nitride group compound semiconductor laser device of the present invention includes: a substrate; and a layered structure provided on the substrate, wherein the layered structure includes an In.sub.z Ga.sub.1-z N active layer (0.ltoreq.z.ltoreq.1) which is formed at least in a first region, an n-type Al.sub.x Ga.sub.1-x N cladding layer (0.ltoreq.x.ltoreq.1) and a p-type Al.sub.y Ga.sub.1-y N cladding layer (0.ltoreq.y.ltoreq.1) interposing the active layer therebetween, and a current-defining structure made of Al.sub.u Ga.sub.1-u N (0.ltoreq.u.ltoreq.1) having an opening corresponding to the first region for defining a current within the first region.

    摘要翻译： 本发明的氮化镓族化合物半导体激光装置包括：基板; 以及设置在所述基板上的分层结构，其中，所述层叠结构包括至少形成在第一区域中的n型Al x Ga 1-x N包层的InzGa1-zN有源层（0≤z≤1） （0≤x≤1）和介于其间的有源层的p型Al y Ga 1-y N包覆层（0≤y≤1）和由AluGa1-uN（ 具有对应于第一区域的开口，用于限定第一区域内的电流。

    Gallium nitride compound semiconductor light emitting device and process for producing gallium nitride compound semiconductor
    2.
    发明授权
    Gallium nitride compound semiconductor light emitting device and process for producing gallium nitride compound semiconductor 失效
    氮化镓化合物半导体发光器件及其制造方法

    公开(公告)号：US06165812A

    公开(公告)日：2000-12-26

    申请号：US913659

    申请日：1997-09-19

    申请人： Akihiko Ishibashi ,  Yuuzaburou Ban ,  Hidemi Takeisi ,  Nobuyuki Uemura ,  Masahiro Kume ,  Isao Kidoguchi

    发明人： Akihiko Ishibashi ,  Yuuzaburou Ban ,  Hidemi Takeisi ,  Nobuyuki Uemura ,  Masahiro Kume ,  Isao Kidoguchi

    IPC分类号： C30B25/02 ,  H01L33/00 ,  H01L33/32 ,  H01L21/00

    CPC分类号： H01L33/32 ,  C30B25/02 ,  C30B29/406 ,  H01L33/007

    摘要： The method for producing gallium nitride group compound semiconductor includes the steps of: forming a polycrystalline nitride layer 11a in a first temperature range on a substrate 10; forming a nucleus layer 11b of gallium nitride single crystals in a second temperature range on the polycrystalline nitride layer 11a; growing the nucleus layer 11b of gallium nitride single crystals in a third temperature range such that resulting crystals of the nucleus layer 11b of gallium nitride single crystals come into contact with each other in a direction parallel to a surface of the substrate 10; and growing the nucleus layer 11b of gallium nitride single crystals in a fourth temperature range in a direction vertical to the surface of the substrate 10.

    摘要翻译： PCT No.PCT / JP97 / 00056 Sec。 371 1999年9月19日第 102（e）1999年9月19日PCT PCT 1997年1月14日PCT公布。 公开号WO97 / 26680 日期1997年7月24日制造氮化镓基化合物半导体的方法包括以下步骤：在基板10上形成第一温度范围内的多晶氮化物层11a; 在第二温度范围内在多晶氮化物层11a上形成氮化镓单晶的核层11b; 在第三温度范围内生长氮化镓单晶的核层11b，使得氮化镓单晶的核层11b的晶体在平行于衬底10的表面的方向上彼此接触; 并且在与衬底10的表面垂直的方向上的第四温度范围内生长氮化镓单晶的核层11b。

    Method of manufacturing a semiconductor and a semiconductor light-emitting device
    4.
    发明授权
    Method of manufacturing a semiconductor and a semiconductor light-emitting device 失效
    制造半导体和半导体发光器件的方法

    公开(公告)号：US06281522B1

    公开(公告)日：2001-08-28

    申请号：US09243462

    申请日：1999-02-03

    申请人： Akihiko Ishibashi ,  Yuzaburo Ban ,  Yoshihiro Hara ,  Nobuyuki Uemura ,  Masahiro Kume

    发明人： Akihiko Ishibashi ,  Yuzaburo Ban ,  Yoshihiro Hara ,  Nobuyuki Uemura ,  Masahiro Kume

    IPC分类号： H01L310312

    CPC分类号： H01L33/007 ,  H01L21/02378 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02661 ,  Y10S438/931

    摘要： First of all, a semiconductor substrate which consists of SiC is soaked for ten minutes in a buffered hydrofluoric acid, thereby the oxidized film formed on the surface of the semiconductor substrate being etched. Then, TMA, NH3, TMG, and hydrogen for carrier are supplied at the rates of 10 &mgr;mol/min., 2.5 L/min., and 2 L/min., respectively to the semiconductor substrate at a temperature of 1090° C. by using MOVPE, thereby a buffer layer which consists of single crystal AlN and has a thickness of 15 nm being grown on the main surface of the semiconductor substrate. After lowering the temperature to 800° C., TMA, TMG, TMI, and NH3are supplied at the rates of 0.2 &mgr;mol/min., 2 &mgr;mol/min., 20 &mgr;mol/min., and 5 L/min., respectively, thereby a single crystal layer which consists of AlGaInN being grown on the buffer layer.

    摘要翻译： 首先，将由SiC构成的半导体基板在缓冲氢氟酸中浸渍10分钟，由此在半导体基板的表面上形成的氧化膜被蚀刻。 然后，在1090℃的温度下，将10Mol / min，2.5L / min和2L / min的速率分别供给到半导体衬底上，作为载体的TMA，NH 3，TMG和氢。 通过使用MOVPE，由此在半导体衬底的主表面上生长由单晶AlN构成的厚度为15nm的缓冲层。 在将温度降至800℃后，分别以0.2mumol / min，2mumol / min，20mumol / min和5L / min的速率提供TMA，TMG，TMI和NH 3， 从而在缓冲层上生长由AlGaInN组成的单晶层。

    Method of manufacturing a semiconductor light-emitting device
    5.
    发明授权
    Method of manufacturing a semiconductor light-emitting device 失效
    制造半导体发光装置的方法

    公开(公告)号：US5923950A

    公开(公告)日：1999-07-13

    申请号：US872154

    申请日：1997-06-10

    申请人： Akihiko Ishibashi ,  Yuzaburo Ban ,  Yoshihiro Hara ,  Nobuyuki Uemura ,  Masahiro Kume

    发明人： Akihiko Ishibashi ,  Yuzaburo Ban ,  Yoshihiro Hara ,  Nobuyuki Uemura ,  Masahiro Kume

    IPC分类号： H01L21/20 ,  H01L21/205 ,  H01L33/00

    CPC分类号： H01L33/007 ,  H01L21/02378 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02661 ,  Y10S438/931

    摘要： A method for manufacturing a semiconductor is disclosed. The method involves soaking a semiconductor substrate that consists of SiC for ten minutes in a buffered hydrofluoric acid, thereby etching the oxidized film formed on the surface of the semiconductor substrate. Then, TMA, NH.sub.3, TMG, and hydrogen for carrier are supplied at the rates of 10 .mu.mol/min., 2.5 L/min., and 2 L/min., respectively, to the semiconductor substrate at a temperature of 1090.degree. C. by using MOVPE. A buffer layer that consists of a single crystal AlN and has a thickness of about 15 nm is grown on the main surface of the semiconductor substrate. After lowering the temperature to 800.degree. C., TMA, TMG, TMI, and NH.sub.3 are supplied at the rates of 0.2 .mu.mol/min., 2 .mu.mol/min., 20 .mu.mol/min., and 5 L/min., respectively. A single crystal layer which consists of AlGaInN is thus grown on the buffer layer.

    摘要翻译： 公开了半导体制造方法。 该方法包括将由SiC组成的半导体衬底浸入缓冲的氢氟酸中10分钟，从而蚀刻形成在半导体衬底的表面上的氧化膜。 然后，在1090℃的温度下分别以10微摩尔/分钟，2.5L /分和2L /分钟的速度向载体提供TMA，NH 3，TMG和氢气。 C.使用MOVPE。 在半导体衬底的主表面上生长由单晶AlN构成并具有约15nm的厚度的缓冲层。 将温度降至800℃后，以0.2微摩尔/分钟，2微摩尔/分钟，20微摩尔/分钟和5升/分钟的速率供给TMA，TMG，TMI和NH 3 。， 分别。 因此，由AlGaInN构成的单晶层在缓冲层上生长。

    Semiconductor laser and production method thereof
    8.
    发明授权
    Semiconductor laser and production method thereof 失效
    半导体激光及其制造方法

    公开(公告)号：US5742629A

    公开(公告)日：1998-04-21

    申请号：US684383

    申请日：1996-07-19

    申请人： Takashi Nishikawa ,  Nobuyuki Uemura ,  Satoshi Kamiyama

    发明人： Takashi Nishikawa ,  Nobuyuki Uemura ,  Satoshi Kamiyama

    IPC分类号： H01S5/20 ,  H01S5/223 ,  H01S5/327 ,  H01S5/347 ,  H01S3/19

    CPC分类号： B82Y20/00 ,  H01S5/347 ,  H01S5/204 ,  H01S5/2231 ,  H01S5/327

    摘要： A semiconductor laser includes: an active layer formed of a II-VI group compound semiconductor material; a first cladding layer and a second cladding layer disposed so as to put the active layer therebetween; a light confinement layer provided on the second cladding layer, having an opening for current flow and formed of ZnMgSSe; and a third cladding layer provided at the opening of the light confinement layer. The light confinement layer has high resistivity or has a conductivity type opposite to that of the third cladding layer; the second and third cladding layers are formed of ZnMgSSe; and a Mg content and a S content of the light confinement layer are larger than a Mg content and a S content of the second and third cladding layers.

    摘要翻译： 半导体激光器包括：由II-VI族化合物半导体材料形成的有源层; 第一包层和第二包层，其设置成将活性层置于其间; 设置在第二包覆层上的光限制层，具有用于电流流动并由ZnMgSSe形成的开口; 以及设置在所述光限制层的开口处的第三包层。 光限制层具有高电阻率或具有与第三覆层相反的导电类型; 第二和第三覆层由ZnMgSSe形成; 并且所述光限制层的Mg含量和S含量大于所述第二和第三包层的Mg含量和S含量。

    High rate line-by-line calculation method and program by forked line type resolution
    9.
    发明申请
    High rate line-by-line calculation method and program by forked line type resolution 有权
    高速逐行计算方法和程序通过分叉线分辨率

    公开(公告)号：US20070097122A1

    公开(公告)日：2007-05-03

    申请号：US10573869

    申请日：2004-08-26

    申请人： Nobuyuki Uemura

    发明人： Nobuyuki Uemura

    IPC分类号： G06T11/20

    CPC分类号： G01J3/28 ,  G01N21/3504

    摘要： The invention offers a calculation method and program capable of performing line-by-line calculations using a Voigt function at speeds of 50-100 times what is conventional. The Voigt function is divided into a first range around the peak and a skirt portion not contained in the first range. The first range is replaced by a cubic function, and the skirt portion is taken as the Voigt function to perform calculations in predetermined ranges of equal intervals. Furthermore, the peak area of the first range is replaced by a cubic function, and the skirt portion is taken as a function representing the difference between the Voigt function and the cubic function to perform calculations in second predetermined intervals smaller than the aforementioned first predetermined intervals. This is repeated until the desired level of precision is reached. Additionally, interpolation is performed by dividing these predetermined intervals into four or five parts.

    摘要翻译： 本发明提供了一种计算方法和程序，其能够使用Voigt函数以50-100倍的传统速度执行逐行计算。 Voigt功能被分为围绕峰的第一范围和不包含在第一范围内的裙部。 将第一范围替换为立方函数，将裙部作为​​Voigt函数，以等间隔的预定范围进行计算。 此外，第一范围的峰面积被立方函数代替，裙部作为表示Voigt函数和立方函数之间的差的函数，以便在比上述第一预定间隔小的第二预定间隔中进行计算 。 直到达到所需的精度水平为止。 此外，通过将这些预定间隔分成四或五个部分来进行插值。