摘要:
A thrust bearing for an automobile turbocharger and which sustains a thrust load of the rotor shaft of the turbocharger. The thrust bearing has a first groove for holding lubricating oil supplied to the bearing. A first oil passage extends from the groove toward the axis of the rotor shaft. A second oil passage communicates with the first passage and has oil holes formed therein that extend to tapering lands formed on surfaces on which the rotor shaft bears. The second passage is so disposed that oil is spouted on both sides of the bearing. The lower end portion of the bearing is cut out portion to facilitate removal of oil. The cut out portion constitutes a planar portion of a closed loop on a surface of the bearing. A second groove is formed in the thrust bearing to hold oil discharged from the oil holes to some extent.
摘要:
A supercharged pressure controller for internal combustion engines, which comprises a switch valve for switching negative pressure at a throttle valve to atmospheric pressure and a relief valve operated by the signal from the switch valve to release the supercharged pressure in a surge tank, thereby controlling the supercharged pressure accurately in accordance with various running conditions of vehicle, avoiding inconveniences such as rough idling or knocking of engine.
摘要:
An air-fuel ratio control apparatus includes a specific integration means for integrating the rich or lean signal determined depending upon the detected concentration of the predetermined exhaust gas component, to produce an integration signal which is increased when the rich signal is applied and decreased only when the lean signal, having a duration longer than a predetermined period, is applied. If the short lean signal, having a duration shorter than or equal to the predetermined period, is produced, the above integration signal is utilized for adjusting the air-fuel ratio condition.
摘要:
A channel layer (40) for forming a portion of a carrier path between a source electrode (100) and a drain electrode (110) is formed on a drift layer (30). The channel layer (40) includes Ge granular crystals formed on the drift layer (30), and a cap layer covering the Ge granular crystals.
摘要:
A mechanical supercharger includes a housing, first, second and third shafts rotatably supported on the housing, respectively, a first timing gear disposed on the first shaft, a second timing gear disposed on the second shaft and engaged with the first shaft timing gear, a first rotor disposed on the first shaft, a second rotor disposed on the second shaft and engaged with the first rotor, a first pulley disposed on one end of the first shaft, an electromagnetic clutch interposed between the first shaft and the first pulley and being selectively intermittent a transmission of driving force between the first shaft and the first pulley, a reduction gear disposed on one end of the third shaft through an one-way clutch and engaged with the second timing gear, a second pulley disposed on the other end of the third shaft and a driving force transmission means for transmitting driving force of engine to the first and second pulleies so that the first and second pulleies are simultaneously rotated in the same direction. Thereby, it is possible to reduce the number of the additional parts for changing the supercharging quantity in response to the condition of the engine and it is possible to prevent the unnecessary increasing of the rotating mass of the rotation groups which are rotated for supercharging.
摘要:
A motor-driven proportional fluid flow control valve has a linear motor including a slide valve body slidably mounted on a hollow iron core and an electromagnetic coil wound around the iron core. After a drive circuit has been energized, a constant current is passed through the electromagnetic coil to keep the slide valve body spaced from a stop surface while cutting off fluid communication between an inlet port and an outlet port. With the slide valve body out of contact with the stop surface, the slide valve does not produce noise which would otherwise be given off due to a fluctuating current flowing, through or vibrations of, the electromagnetic coil.
摘要:
A channel layer (40) for forming a portion of a carrier path between a source electrode (100) and a drain electrode (110) is formed on a drift layer (30). The channel layer (40) includes Ge granular crystals formed on the drift layer (30), and a cap layer covering the Ge granular crystals.
摘要:
A semiconductor material having a stepwise surface structure of (0001)-plane terraces and (11-2n)-plane steps [n≧0] on the SiC substrate, a semiconductor device using the same and a method of producing the semiconductor material in which a carbon-rich surface is formed on the SiC substrate prior to epitaxial growth of an SiC crystal, the carbon-rich surface satisfies the ratio R=(I284.5/I282.8)>0.2, wherein I282.8 (ISiC) is an integrated intensity of a C1s signal having a peak at the binding energy relating to stoichiometric SiC (in the region of 282.8 eV), and I284.5 (IC) is an integrated intensity of a C1s signal having a peak at the binding energy relating to graphite, SiCx (x>1), or SiyCH1-y (y
摘要:
A semiconductor material having a stepwise surface structure of (0001)-plane terraces and (11-2n)-plane steps [n≧0] on the SiC substrate, a semiconductor device using the same and a method of producing the semiconductor material in which a carbon-rich surface is formed on the SiC substrate prior to epitaxial growth of an SiC crystal, the carbon-rich surface satisfies the ratio R=(I284.5/I282.8)>0.2, wherein I282.8 (ISiC) is an integrated intensity of a C1s signal having a peak at the binding energy relating to stoichiometric SiC (in the region of 282.8 eV), and I284.5 (IC) is an integrated intensity of a C1s signal having a peak at the binding energy relating to graphite, SiCx (x>1), or SiyCH1-y (y
摘要翻译:在SiC衬底上具有(0001)面平台和(11-2n)平面台阶[n> = 0]的逐步表面结构的半导体材料,使用其的半导体器件和制造半导体材料的方法 在SiC晶体的外延生长之前,在SiC衬底上形成富碳表面,富碳表面满足比例R =(I> 284.5 / I> 282.8 SUB >)> 0.2,其中I 282.8(I 3 S)是具有与化学计量的SiC相关的结合能的峰的C1s信号的积分强度(在 282.8eV)和I 284.5(I C)是具有与石墨有关的结合能的峰的C1s信号的积分强度,SiC < (x> 1)或Si y y 1 y y(y 1)(在284.5eV的区域内),通过X-射线 ray光电子分光分析仪(XPS)。
摘要:
The present invention provides a method of producing a silicon carbide semiconductor substrate in which a silicon carbide buffer layer doped with germanium and a semiconductor device layer are sequentially laminated on the buffer layer, a silicon carbide semiconductor substrate obtained by the method and a silicon carbide semiconductor in which electrodes are disposed on the silicon carbide semiconductor substrate.