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    Compound semiconductor bipolar transistor
    5.
    发明授权
    Compound semiconductor bipolar transistor 失效
    复合半导体双极晶体管

    公开(公告)号：US5726468A

    公开(公告)日：1998-03-10

    申请号：US614688

    申请日：1996-03-13

    申请人： Tomoki Oku ,  Hirofumi Nakano ,  Shinichi Miyakuni ,  Teruyuki Shimura ,  Ryo Hattori

    发明人： Tomoki Oku ,  Hirofumi Nakano ,  Shinichi Miyakuni ,  Teruyuki Shimura ,  Ryo Hattori

    IPC分类号： H01L29/41 ,  H01L21/28 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/3205 ,  H01L21/331 ,  H01L23/52 ,  H01L29/205 ,  H01L29/423 ,  H01L29/43 ,  H01L29/73 ,  H01L29/732 ,  H01L29/737 ,  H01L31/0328 ,  H01L31/0336

    CPC分类号： H01L29/7371 ,  H01L29/42304

    摘要： A semiconductor device includes a semiconductor substrate; a first active layer disposed on the semiconductor substrate; a second active layer disposed on the first active layer; a first electrode including a lower stage disposed on the second active layer and an upper stage disposed on the lower stage and having an overhanging portion protruding from the lower stage; an insulating film continuously covering a surface of the second active layer, a side surface of the lower stage of the first electrode, and a lower surface and a side surface of the overhanging portion of the upper stage; and a second electrode disposed on the surface of the first active layer at opposite sides of the second active layer, self-aligned with the second active layer. The distance between the second electrode and the second active layer is minimized and the thickness of the second electrode can be about 7000 .ANG., minimizing the resistance of the first active layer and improving high frequency characteristics. Electrical separation between the first and second active layers can be achieved reliably. Recombination at the surface of the second active layer is suppressed.

    摘要翻译： 半导体器件包括半导体衬底; 设置在所述半导体衬底上的第一有源层; 设置在所述第一有源层上的第二有源层; 第一电极，其包括设置在第二有源层上的下层和设置在下层上的上层，具有从下层突出的突出部; 绝缘膜，连续地覆盖第二有源层的表面，第一电极的下层的侧表面，以及上层的突出部的下表面和侧表面; 以及第二电极，其设置在所述第二有源层的与所述第二有源层自对准的所述第二有源层的相对侧的所述表面上。 第二电极和第二有源层之间的距离被最小化，并且第二电极的厚度可以是约7000，使第一有源层的电阻最小化并提高高频特性。 可以可靠地实现第一和第二有源层之间的电气分离。 第二活性层的表面的重组被抑制。

    Device housing, mobile terminal device, and method therefor
    6.
    发明授权
    Device housing, mobile terminal device, and method therefor 有权
    设备外壳，移动终端设备及其方法

    公开(公告)号：US08718723B2

    公开(公告)日：2014-05-06

    申请号：US12609351

    申请日：2009-10-30

    申请人： Takashi Suzuki ,  Hidekatsu Kobayashi ,  Ryo Hattori ,  Kouki Murakami ,  Hidehiko Hizuka

    发明人： Takashi Suzuki ,  Hidekatsu Kobayashi ,  Ryo Hattori ,  Kouki Murakami ,  Hidehiko Hizuka

    IPC分类号： H04M1/00

    CPC分类号： H04M1/026 ,  H04M1/0266 ,  H04M1/18

    摘要： There is provided a device housing for a mobile terminal device that includes a metallic plate, an external wall formed of resin and disposed at outer peripheral edges of the metallic plate, an electronic component holder formed of the resin at the nearly same time when the external wall is formed. Furthermore, the electronic component holder disposed on an inner area of the metallic plate surrounded by the external wall the metallic plate and disposed apart from the external wall.

    摘要翻译： 提供了一种用于移动终端设备的设备外壳，其包括金属板，由树脂形成的外壁并且设置在金属板的外周边缘处，由外部形成的电子部件保持器在几乎相同的时间由外部 墙形成。 此外，电子部件保持器设置在金属板的内部区域上，该金属板被外部金属板包围并与外壁隔开。

    DEVICE HOUSING AND MOBILE TERMINAL DEVICE
    7.
    发明申请
    DEVICE HOUSING AND MOBILE TERMINAL DEVICE 有权
    设备外壳和移动终端设备

    公开(公告)号：US20100134963A1

    公开(公告)日：2010-06-03

    申请号：US12609351

    申请日：2009-10-30

    申请人： Takashi SUZUKI ,  Hidekatsu Kobayashi ,  Ryo Hattori ,  Kouki Murakami ,  Hidehiko Hizuka

    发明人： Takashi SUZUKI ,  Hidekatsu Kobayashi ,  Ryo Hattori ,  Kouki Murakami ,  Hidehiko Hizuka

    IPC分类号： H05K5/00

    CPC分类号： H04M1/026 ,  H04M1/0266 ,  H04M1/18

    摘要： There is provided a device housing for a mobile terminal device that includes a metallic plate, an external wall formed of resin and disposed at outer peripheral edges of the metallic plate, an electronic component holder formed of the resin at the nearly same time when the external wall is formed. Furthermore, the electronic component holder disposed on an inner area of the metallic plate surrounded by the external wall the metallic plate and disposed apart from the external wall.

    摘要翻译： 提供了一种用于移动终端设备的设备外壳，其包括金属板，由树脂形成的外壁并且设置在金属板的外周边缘处，由外部形成的电子部件保持器在几乎相同的时间由外部 墙形成。 此外，电子部件保持器设置在金属板的内部区域上，该金属板被外部金属板包围并与外壁隔开。

    ELECTRONIC DEVICE
    8.
    发明申请
    ELECTRONIC DEVICE 有权
    电子设备

    公开(公告)号：US20100113108A1

    公开(公告)日：2010-05-06

    申请号：US12605542

    申请日：2009-10-26

    申请人： Wataru Murata ,  Takeshi Komuro ,  Manabu Hongo ,  Hidekatsu Kobayashi ,  Takashi Suzuki ,  Ryo Hattori ,  Kouki Murakami

    发明人： Wataru Murata ,  Takeshi Komuro ,  Manabu Hongo ,  Hidekatsu Kobayashi ,  Takashi Suzuki ,  Ryo Hattori ,  Kouki Murakami

    IPC分类号： H04M1/00

    CPC分类号： H04M1/18 ,  H04M1/03

    摘要： An electronic device includes an outer case having a sound hole, an acoustic unit included in the outer case in a position corresponding to a position of the sound hole, a sheet member provided between the acoustic unit and the outer case in a position corresponding to the position of the sound hole, and placed over the acoustic unit to cover an outside of an outer edge of the acoustic unit, a mounting portion circumferentially provided on an outer peripheral portion of the sheet member and mounted to the outer case, and an extension portion that extends the mounting portion toward an inner periphery thereof on a side of the sheet member facing the acoustic unit and to which the acoustic unit is mounted.

    摘要翻译： 电子设备包括具有声孔的外壳，在外壳中包括在与声孔位置相对应的位置的声学单元，设置在声单元和外壳之间的对应于 声孔的位置，并放置在声学单元上方以覆盖声学单元的外边缘的外侧，周向设置在片状构件的外周部分并安装到外壳的安装部分，以及延伸部分 其将安装部分朝向其内周延伸到面向声学单元的片状构件的一侧，并且安装声学单元。

    Field effect semiconductor device
    9.
    发明授权
    Field effect semiconductor device 失效
    场效半导体器件

    公开(公告)号：US06355951B1

    公开(公告)日：2002-03-12

    申请号：US09445957

    申请日：1999-12-16

    申请人： Ryo Hattori

    发明人： Ryo Hattori

    IPC分类号： H01L3300

    CPC分类号： H01L29/66871 ,  H01L21/28587 ,  H01L29/1075 ,  H01L29/155 ,  H01L29/66462

    摘要： In a field effect transistor such as high output FET or low noise HEMT, a layer for facilitating re-combination of carriers (for example a superlattice buffer layer), an undoped compound semiconductor layer having a higher resistance than a channel layer and the channel layer made of a compound semiconductor are layered successively. In the layer for facilitating re-combination of carriers, for example, oxygen of high concentration is introduced, to facilitate the non-radiative recombination which shortens the life of injected carriers. The layer for facilitating re-combination of carriers is also formed by forming the superlattice layer at a lower temperature than the channel layer. Thus, efficiency and voltageproofness on high frequency, high output power operation is improved further, and noises can be decreased further on high frequency, low noise operation.

    摘要翻译： 在诸如高输出FET或低噪声HEMT的场效应晶体管中，用于促进载流子（例如超晶格缓冲层）的重新组合的层，具有比沟道层更高的电阻的未掺杂化合物半导体层和沟道层 由化合物半导体构成。 在促进载体再结合的层中，例如，引入高浓度的氧，以促进非辐射复合，这缩短了注入载体的寿命。 用于促进载流子再组合的层也通过在比沟道层低的温度下形成超晶格层来形成。 因此，高频率，高输出功率运行的效率和电压进一步提高，在高频，低噪声运行时噪声可进一步降低。

    Method of making a semiconductor laser device
    10.
    发明授权
    Method of making a semiconductor laser device 失效
    制造半导体激光器件的方法

    公开(公告)号：US5179040A

    公开(公告)日：1993-01-12

    申请号：US764362

    申请日：1991-09-23

    申请人： Ryo Hattori

    发明人： Ryo Hattori

    IPC分类号： H01S5/227

    CPC分类号： H01S5/227 ,  H01S5/2275 ,  Y10S148/095

    摘要： A novel semiconductor laser device includes a P-type semiconductor substrate, an N-type InP current blocking layer on the substrate, a P-type InP buried layer of which has the same thickness as and is surrounded by the first current blocking layer, and a ridge, on the buried layer, having a double heterojunction structure therein and including a stack of a planar P-type first InP cladding layer, a planar InGaAsP active layer, and a planar N-type second InP cladding layer. The ridge has a width of the same order as that of the buried layer. A P-type InP current blocking layer is disposed on the N-type current blocking layer burying the ridge and an N-type contact layer is formed opposite and in contact with the P-type current blocking layer and the N-type cladding layer. The conductivity types of the layers can be reversed.

    摘要翻译： 一种新型的半导体激光器件包括P型半导体衬底，衬底上的N型InP电流阻挡层，P型InP掩埋层的厚度与第一电流阻挡层相同并被第一电流阻挡层包围， 掩埋层上的具有双异质结结构的脊，包括平面P型第一InP包覆层，平面InGaAsP有源层和平面N型第二InP包覆层的叠层。 脊的宽度与埋层的宽度相同。 P型InP电流阻挡层设置在埋入脊的N型电流阻挡层上，并且N型接触层形成为与P型电流阻挡层和N型覆层相对且接触。 层的导电类型可以颠倒。