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    Solid-state image pick-up device with uniform distribution of dopant therein and production method therefor
    3.
    发明授权
    Solid-state image pick-up device with uniform distribution of dopant therein and production method therefor 失效
    具有均匀分布掺杂剂的固态摄像装置及其制造方法

    公开(公告)号：US4951104A

    公开(公告)日：1990-08-21

    申请号：US295515

    申请日：1989-01-11

    申请人： Yasaburo Kato ,  Toshihiko Suzuki ,  Nobuyuki Isawa ,  Hideo Kanbe ,  Masaharu Hamasaki

    发明人： Yasaburo Kato ,  Toshihiko Suzuki ,  Nobuyuki Isawa ,  Hideo Kanbe ,  Masaharu Hamasaki

    IPC分类号： C30B15/30 ,  C30B31/20 ,  H01J9/233 ,  H01L21/261 ,  H01L27/148 ,  H01L29/78 ,  H01L31/18

    CPC分类号： H01L21/261 ,  C30B15/305 ,  C30B31/20 ,  H01L27/14831 ,  H01L27/14887 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

    摘要： A method for fabricating a solid-state image pick-up device changes part of the constituent elemental Si into the n-type impurity phosphorus P, thus changing the substrate to an n-type, by atomic transmutation through neutron irradiation of a p-type silicon Si wafer, and thus produces a Si substrate with a resistivity .rho..sub.s of 10 to 100 ohm-cm. or preferably 40 to 60 ohm-cm. A solid-state image pick-up device with a plurality of photosensors and vertical and horizontal shift registers as set forth above is then fabricated using the resulting Si substrate. In the preferred process, the silicon substrate can be obtained by irradiating a wafer sectioned from a crystal grown by the MCZ method, for instance, with neutrons as described before until it has the required resistivity .rho..sub.s. This silicon substrate is preferably of a p-type before neutron irradiation, that is, in the crystal growth state, and its resistivity .rho..sub.o is then ten or more times higher (100 ohm-cm. or more) than that .rho..sub.s obtained following neutron irradiation. For instance, if .rho..sub.s is to be 40 to 50 ohm-cm., .rho..sub.o should be 680 to 1180 ohm-cm. Then n-type impurities, e.g. phosphorus P are generated by neutron irradiation to convert the silicon substrate to n-type with a low resistivity of .rho..sub.S =10 to 100 ohm-cm., or of 40 to 50 ohm-cm.

    摘要翻译： 固态摄像装置的制造方法将构成元素Si的一部分变更为n型杂质磷P，由此通过p型的中子照射使基板变为n型 硅Si晶片，并且因此产生电阻率rho为10至100ohm-cm的Si衬底。 或优选为40至60欧姆 - 厘米。 然后使用所得到的Si衬底制造具有如上所述的多个光电传感器和垂直和水平移位寄存器的固态图像拾取装置。 在优选的方法中，可以通过照射由通过MCZ方法生长的晶体（例如，如上所述的中子）分离的晶片直到其具有所需的电阻率rho s来获得硅衬底。 该硅衬底优选在中子照射之前为p型，即处于晶体生长状态，并且其电阻率rho o比后续获得的rho多高十倍以上（100ohm-cm以上） 中子照射。 例如，如果rho为40〜50ohm-cm，则rho应为680〜1180ohm-cm。 然后，n型杂质，例如 磷P通过中子照射产生，以将硅衬底转换成具有低电阻率的rho = 10至100欧姆 - 厘米或40至50欧姆 - 厘米的n型。

    Production of solid-state image pick-up device with uniform distribution of dopants
    4.
    发明授权
    Production of solid-state image pick-up device with uniform distribution of dopants 失效
    生产具有均匀分布掺杂剂的固态摄像装置

    公开(公告)号：US4836788A

    公开(公告)日：1989-06-06

    申请号：US927161

    申请日：1986-11-05

    申请人： Yasaburo Kato ,  Toshihiko Suzuki ,  Nobuyuki Isawa ,  Hideo Kanbe ,  Masaharu Hamasaki

    发明人： Yasaburo Kato ,  Toshihiko Suzuki ,  Nobuyuki Isawa ,  Hideo Kanbe ,  Masaharu Hamasaki

    IPC分类号： C30B15/30 ,  C30B31/20 ,  H01J9/233 ,  H01L21/261 ,  H01L27/148 ,  H01L29/78 ,  H01L31/18

    CPC分类号： H01L21/261 ,  C30B15/305 ,  C30B31/20 ,  H01L27/14831 ,  H01L27/14887 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

    摘要： A method for fabricating a solid-state image pick-up device changes part of the constituent elemental Si into the n-type impurity phosphorus P, thus changing the substrate to an n-type, by atomic transmutation through neutron irradiation of a p-type silicon Si wafer, and thus produces a Si substrate with a resistivity .rho..sub.s of 10 to 100 ohm-cm. or preferably 40 to 60 ohm-cm. A solid-state image pick-up device with a plurality of photosensors and vertical and horizontal shift registers as set forth above is then fabricated using the resulting Si substrate. In the preferred process, the silicon substrate can be obtained by irradiating a wafer sectioned from a crystal grown by the MCZ method, for instance, with neutrons as described before until it has the required resistivity .rho..sub.s. This silicon substrate is preferably of a p-type before neutron irradiation, that is, in the crystal growth state, and its resistivity .rho..sub.o is then ten or more times higher (100 ohm-cm. or more) than that .rho..sub.s obtained following neutron irradiation. For instance, if .rho..sub.s is to be 40 to 50 ohm-cm., .rho..sub.o should be 680 to 1180 ohm-cm. Then, n-type impurities, e.g. phosphorus P are generated by neutron irradiation to convert the silicon substrate to n-type with a low resistivity of .rho..sub.s =10 to 100 ohm-cm., or of 40 to 50 ohm-cm.

    摘要翻译： 固态摄像装置的制造方法将构成元素Si的一部分变更为n型杂质磷P，由此通过p型的中子照射使基板变为n型 硅Si晶片，并且因此产生电阻率rho为10至100ohm-cm的Si衬底。 或优选为40至60欧姆 - 厘米。 然后使用所得到的Si衬底制造具有如上所述的多个光电传感器和垂直和水平移位寄存器的固态图像拾取装置。 在优选的方法中，可以通过照射由通过MCZ方法生长的晶体（例如，如上所述的中子）分离的晶片直到其具有所需的电阻率rho s来获得硅衬底。 该硅衬底优选在中子照射之前为p型，即处于晶体生长状态，并且其电阻率rho o比后续获得的rho多高十倍以上（100ohm-cm以上） 中子照射。 例如，如果rho为40〜50ohm-cm，则rho应为680〜1180ohm-cm。 然后，n型杂质，例如 磷P通过中子照射产生，以将硅衬底转换成具有低电阻率的rho = 10至100欧姆 - 厘米或40至50欧姆 - 厘米的n型。