公开(公告)号：US20120261735A1

公开(公告)日：2012-10-18

申请号：US13538638

申请日：2012-06-29

申请人： Toshihiro IIZUKA ,  Tomoe YAMAMOTO ,  Mami TODA ,  Shintaro YAMAMICHI

发明人： Toshihiro IIZUKA ,  Tomoe YAMAMOTO ,  Mami TODA ,  Shintaro YAMAMICHI

IPC分类号： H01L27/108

CPC分类号： H01L27/108 ,  C23C16/405 ,  C23C16/45525 ,  G11C11/404 ,  G11C2207/104 ,  H01L21/02181 ,  H01L21/02189 ,  H01L21/02194 ,  H01L21/0228 ,  H01L21/3141 ,  H01L21/31604 ,  H01L21/31641 ,  H01L21/31645 ,  H01L27/10814 ,  H01L27/10852 ,  H01L27/10894 ,  H01L28/40 ,  H01L28/55 ,  H01L28/60 ,  H01L28/65 ,  H01L28/90

摘要： In a thin film transistor, each of an upper electrode and a lower electrode is formed of at least one material selected from the group consisting of a metal and a metal nitride, represented by TiN, Ti, W, WN, Pt, Ir, Ru. A capacitor dielectric film is formed of at least one material selected from the group consisting of ZrO.sub.2, HfO.sub.2, (Zr.sub.x, Hf.sub.1−x)O.sub.2 (0

摘要翻译： 在薄膜晶体管中，上部电极和下部电极中的每一个由选自由TiN，Ti，W，WN，Pt，Ir，Ru所示的金属和金属氮化物组成的组中的至少一种形成 。 电容器电介质膜由选自ZrO 2，HfO 2，（Zr.sub.x，Hf x-x）O 2中的至少一种材料形成 0

公开(公告)号：US20080064147A1

公开(公告)日：2008-03-13

申请号：US11928460

申请日：2007-10-30

申请人： Toshihiro IIZUKA ,  Tomoe Yamamoto ,  Mami Toda ,  Shintaro Yamamichi

发明人： Toshihiro IIZUKA ,  Tomoe Yamamoto ,  Mami Toda ,  Shintaro Yamamichi

IPC分类号： H01L21/82 ,  H01L21/8242

CPC分类号： H01L27/108 ,  C23C16/405 ,  C23C16/45525 ,  G11C11/404 ,  G11C2207/104 ,  H01L21/02181 ,  H01L21/02189 ,  H01L21/02194 ,  H01L21/0228 ,  H01L21/3141 ,  H01L21/31604 ,  H01L21/31641 ,  H01L21/31645 ,  H01L27/10814 ,  H01L27/10852 ,  H01L27/10894 ,  H01L28/40 ,  H01L28/55 ,  H01L28/60 ,  H01L28/65 ,  H01L28/90

摘要： In a thin film transistor, each of an upper electrode and a lower electrode is formed of at least one material selected from the group consisting of a metal and a metal nitride, represented by TiN, Ti, W, WN, Pt, Ir, Ru. A capacitor dielectric film is formed of at least one material selected from the group consisting of ZrO2, HfO2, (Zrx, Hf1-x)O2 (0

摘要翻译： 在薄膜晶体管中，上部电极和下部电极中的每一个由选自由TiN，Ti，W，WN，Pt，Ir，Ru所示的金属和金属氮化物组成的组中的至少一种形成 。 电容器电介质膜由选自ZrO 2，HfO 2 2，（Zr x x，Hf）2， （0

公开(公告)号：US20120028455A1

公开(公告)日：2012-02-02

申请号：US13067788

申请日：2011-06-27

申请人： Naomi FUKUMAKI ,  Eiji HASEGAWA ,  Toshihiro IIZUKA ,  Ichiro YAMAMOTO

发明人： Naomi FUKUMAKI ,  Eiji HASEGAWA ,  Toshihiro IIZUKA ,  Ichiro YAMAMOTO

IPC分类号： H01L21/8238

CPC分类号： H01L21/823857 ,  H01L21/823842

摘要： A method of manufacturing a semiconductor device having a p-type field effect transistor and an n-type field effect transistor includes the steps of: forming an interface insulating layer and a high-permittivity layer on a substrate in the stated order; forming a pattern of a sacrifice layer on the high-permittivity layer; forming a metal-containing film containing metal elements therein on the high-permittivity layer in a first region where the sacrifice layer is formed and a second region where no sacrifice layer is formed; introducing the metal elements into an interface between the interface insulating layer and the high-permittivity layer in the second region by conducting a heat treatment; and removing the sacrifice layer by wet etching, wherein in the removing step, the sacrifice layer is etched easily more than the high-permittivity layer. With this configuration, the semiconductor device excellent in reliability is obtained.

摘要翻译： 制造具有p型场效应晶体管和n型场效应晶体管的半导体器件的方法包括以下步骤：按照所述顺序在衬底上形成界面绝缘层和高电容率层; 在高电介质层上形成牺牲层的图案; 在形成有牺牲层的第一区域和形成牺牲层的第二区域的高介电常数层上形成含有金属元素的含金属膜; 通过进行热处理，将金属元素引入第二区域中的界面绝缘层与高电容率层之间的界面; 并且通过湿法蚀刻去除牺牲层，其中在去除步骤中，牺牲层比高介电常数层容易蚀刻。 由此，能够获得可靠性优异的半导体装置。

公开(公告)号：US20100327366A1

公开(公告)日：2010-12-30

申请号：US12819662

申请日：2010-06-21

申请人： Kenzo MANABE ,  Toshihiro IIZUKA ,  Daisuke IKENO

发明人： Kenzo MANABE ,  Toshihiro IIZUKA ,  Daisuke IKENO

IPC分类号： H01L27/092

CPC分类号： H01L21/823842

摘要： A first adjusting metal, capable of varying the threshold voltage of a first-conductivity-type transistor of a complementary transistor, is added to the first-conductivity-type transistor and a second-conductivity-type transistor at the same time, and a diffusion suppressive element, capable of suppressing diffusion of the first adjusting metal, is added from above a metal gate electrode of the second-conductivity-type transistor.

摘要翻译： 能够改变互补晶体管的第一导电型晶体管的阈值电压的第一调整金属同时被添加到第一导电型晶体管和第二导电型晶体管，并且扩散 从第二导电型晶体管的金属栅电极的上方添加能够抑制第一调整金属的扩散的抑制元件。