公开(公告)号：US20080064147A1

公开(公告)日：2008-03-13

申请号：US11928460

申请日：2007-10-30

申请人： Toshihiro IIZUKA ,  Tomoe Yamamoto ,  Mami Toda ,  Shintaro Yamamichi

发明人： Toshihiro IIZUKA ,  Tomoe Yamamoto ,  Mami Toda ,  Shintaro Yamamichi

IPC分类号： H01L21/82 ,  H01L21/8242

CPC分类号： H01L27/108 ,  C23C16/405 ,  C23C16/45525 ,  G11C11/404 ,  G11C2207/104 ,  H01L21/02181 ,  H01L21/02189 ,  H01L21/02194 ,  H01L21/0228 ,  H01L21/3141 ,  H01L21/31604 ,  H01L21/31641 ,  H01L21/31645 ,  H01L27/10814 ,  H01L27/10852 ,  H01L27/10894 ,  H01L28/40 ,  H01L28/55 ,  H01L28/60 ,  H01L28/65 ,  H01L28/90

摘要： In a thin film transistor, each of an upper electrode and a lower electrode is formed of at least one material selected from the group consisting of a metal and a metal nitride, represented by TiN, Ti, W, WN, Pt, Ir, Ru. A capacitor dielectric film is formed of at least one material selected from the group consisting of ZrO2, HfO2, (Zrx, Hf1-x)O2 (0

摘要翻译： 在薄膜晶体管中，上部电极和下部电极中的每一个由选自由TiN，Ti，W，WN，Pt，Ir，Ru所示的金属和金属氮化物组成的组中的至少一种形成 。 电容器电介质膜由选自ZrO 2，HfO 2 2，（Zr x x，Hf）2， （0

公开(公告)号：US20070152256A1

公开(公告)日：2007-07-05

申请号：US11637147

申请日：2006-12-12

申请人： Toshihiro Iizuka ,  Tomoe Yamamoto ,  Mami Toda ,  Shintaro Yamamichi

发明人： Toshihiro Iizuka ,  Tomoe Yamamoto ,  Mami Toda ,  Shintaro Yamamichi

IPC分类号： H01L29/94

CPC分类号： H01L27/108 ,  C23C16/405 ,  C23C16/45525 ,  G11C11/404 ,  G11C2207/104 ,  H01L21/02181 ,  H01L21/02189 ,  H01L21/02194 ,  H01L21/0228 ,  H01L21/3141 ,  H01L21/31604 ,  H01L21/31641 ,  H01L21/31645 ,  H01L27/10814 ,  H01L27/10852 ,  H01L27/10894 ,  H01L28/40 ,  H01L28/55 ,  H01L28/60 ,  H01L28/65 ,  H01L28/90

摘要： A semiconductor device having a logic section and a memory section that are formed on the same semiconductor chip, including: a first transistor formed in the logic section and having gate electrodes and source and drain regions, and a second transistor formed in the memory section having gate electrodes, source and drain regions and a capacitor, the capacitor being of a MIM structure and having an upper and a lower metal electrode and a capacitor dielectric film sandwiched therebetween, the capacitor dielectric film being formed of a dielectric material which is selected from the group consisting of ZrO2, Hf92, (Zrx, Hf1-x)O2 (0

摘要翻译： 一种具有形成在同一半导体芯片上的逻辑部分和存储部分的半导体器件，包括：形成在逻辑部分中并具有栅电极和源极和漏极区域的第一晶体管，以及形成在存储部分中的第二晶体管， 栅极电极，源极和漏极区域以及电容器，电容器是MIM结构，并且具有夹在其间的上部和下部金属电极和电容器电介质膜，所述电容器电介质膜由介电材料形成，所述绝缘材料选自 由ZrO2，Hf92，（Zrx，Hf1-x）O2（0

公开(公告)号：US08815678B2

公开(公告)日：2014-08-26

申请号：US11928460

申请日：2007-10-30

申请人： Toshihiro Iizuka ,  Tomoe Yamamoto ,  Mami Toda ,  Shintaro Yamamichi

发明人： Toshihiro Iizuka ,  Tomoe Yamamoto ,  Mami Toda ,  Shintaro Yamamichi

IPC分类号： H01L21/8242 ,  H01L21/316 ,  H01L49/02 ,  C23C16/455 ,  G11C11/404 ,  H01L21/314 ,  H01L27/108 ,  C23C16/40

CPC分类号： H01L27/108 ,  C23C16/405 ,  C23C16/45525 ,  G11C11/404 ,  G11C2207/104 ,  H01L21/02181 ,  H01L21/02189 ,  H01L21/02194 ,  H01L21/0228 ,  H01L21/3141 ,  H01L21/31604 ,  H01L21/31641 ,  H01L21/31645 ,  H01L27/10814 ,  H01L27/10852 ,  H01L27/10894 ,  H01L28/40 ,  H01L28/55 ,  H01L28/60 ,  H01L28/65 ,  H01L28/90

摘要： In a thin film transistor, each of an upper electrode and a lower electrode is formed of at least one material selected from the group consisting of a metal and a metal nitride, represented by TiN, Ti, W, WN, Pt, Ir, Ru. A capacitor dielectric film is formed of at least one material selected from the group consisting of ZrO2, HfO2, (Zrx, Hf1-x)O2 (0

摘要翻译： 在薄膜晶体管中，上部电极和下部电极中的每一个由选自由TiN，Ti，W，WN，Pt，Ir，Ru所示的金属和金属氮化物组成的组中的至少一种形成 。 电容器电介质膜由选自ZrO 2，HfO 2，（Zr x，Hf 1-x）O 2（0

公开(公告)号：US08212299B2

公开(公告)日：2012-07-03

申请号：US10170813

申请日：2002-06-13

申请人： Toshihiro Iizuka ,  Tomoe Yamamoto ,  Mami Toda ,  Shintaro Yamamichi

发明人： Toshihiro Iizuka ,  Tomoe Yamamoto ,  Mami Toda ,  Shintaro Yamamichi

IPC分类号： H01L27/108 ,  H01L29/76

CPC分类号： H01L27/108 ,  C23C16/405 ,  C23C16/45525 ,  G11C11/404 ,  G11C2207/104 ,  H01L21/02181 ,  H01L21/02189 ,  H01L21/02194 ,  H01L21/0228 ,  H01L21/3141 ,  H01L21/31604 ,  H01L21/31641 ,  H01L21/31645 ,  H01L27/10814 ,  H01L27/10852 ,  H01L27/10894 ,  H01L28/40 ,  H01L28/55 ,  H01L28/60 ,  H01L28/65 ,  H01L28/90

摘要： In a thin film transistor, each of an upper electrode and a lower electrode is formed of at least one material selected from the group consisting of a metal and a metal nitride, represented by TiN, Ti, W, WN, Pt, Ir, Ru. A capacitor dielectric film is formed of at least one material selected from the group consisting of ZrO2, HfO2, (Zrx, Hf1−x)O2(0

摘要翻译： 在薄膜晶体管中，上部电极和下部电极中的每一个由选自由TiN，Ti，W，WN，Pt，Ir，Ru所示的金属和金属氮化物组成的组中的至少一种形成 。 电容器电介质膜由选自ZrO 2，HfO 2，（Zr x，Hf 1-x）O 2（0

公开(公告)号：US08169013B2

公开(公告)日：2012-05-01

申请号：US11637147

申请日：2006-12-12

申请人： Toshihiro Iizuka ,  Tomoe Yamamoto ,  Mami Toda ,  Shintaro Yamamichi

发明人： Toshihiro Iizuka ,  Tomoe Yamamoto ,  Mami Toda ,  Shintaro Yamamichi

IPC分类号： H01L27/108 ,  H01L29/76

CPC分类号： H01L27/108 ,  C23C16/405 ,  C23C16/45525 ,  G11C11/404 ,  G11C2207/104 ,  H01L21/02181 ,  H01L21/02189 ,  H01L21/02194 ,  H01L21/0228 ,  H01L21/3141 ,  H01L21/31604 ,  H01L21/31641 ,  H01L21/31645 ,  H01L27/10814 ,  H01L27/10852 ,  H01L27/10894 ,  H01L28/40 ,  H01L28/55 ,  H01L28/60 ,  H01L28/65 ,  H01L28/90

摘要： A semiconductor device having a logic section and a memory section that are formed on the same semiconductor chip, including: a first transistor formed in the logic section and having gate electrodes and source and drain regions, and a second transistor formed in the memory section having gate electrodes, source and drain regions and a capacitor, the capacitor being of a MIM structure and having an upper and a lower metal electrode and a capacitor dielectric film sandwiched therebetween, the capacitor dielectric film being formed of a dielectric material which is selected from the group consisting of ZrO2, Hf92, (Zrx, Hf1-x)O2 (0

摘要翻译： 一种具有形成在同一半导体芯片上的逻辑部分和存储部分的半导体器件，包括：形成在逻辑部分中并具有栅电极和源极和漏极区域的第一晶体管，以及形成在存储部分中的第二晶体管， 栅极电极，源极和漏极区域以及电容器，电容器是MIM结构，并且具有夹在其间的上部和下部金属电极和电容器电介质膜，所述电容器电介质膜由介电材料形成，所述绝缘材料选自 由ZrO2，Hf92，（Zrx，Hf1-x）O2（0

公开(公告)号：US20050051824A1

公开(公告)日：2005-03-10

申请号：US10967436

申请日：2004-10-18

申请人： Toshihiro Iizuka ,  Tomoe Yamamoto ,  Mami Toda ,  Shintaro Yamamichi

发明人： Toshihiro Iizuka ,  Tomoe Yamamoto ,  Mami Toda ,  Shintaro Yamamichi

IPC分类号： H01L27/04 ,  C23C16/40 ,  C23C16/44 ,  C23C16/455 ,  H01L21/02 ,  H01L21/314 ,  H01L21/316 ,  H01L21/822 ,  H01L21/8242 ,  H01L27/108 ,  H01L21/00 ,  H01L29/76 ,  H01L31/119

CPC分类号： H01L27/108 ,  C23C16/405 ,  C23C16/45525 ,  G11C11/404 ,  G11C2207/104 ,  H01L21/02181 ,  H01L21/02189 ,  H01L21/02194 ,  H01L21/0228 ,  H01L21/3141 ,  H01L21/31604 ,  H01L21/31641 ,  H01L21/31645 ,  H01L27/10814 ,  H01L27/10852 ,  H01L27/10894 ,  H01L28/40 ,  H01L28/55 ,  H01L28/60 ,  H01L28/65 ,  H01L28/90

摘要： In a thin film transistor, each of an upper electrode and a lower electrode is formed of at least one material selected from the group consisting of a metal and a metal nitride, represented by TiN, Ti, W, WN, Pt, Ir, Ru. A capacitor dielectric film is formed of at least one material selected from the group consisting of ZrO2, HfO2, (Zrx, Hf1-x)O2 (0

摘要翻译： 在薄膜晶体管中，上部电极和下部电极中的每一个由选自由TiN，Ti，W，WN，Pt，Ir，Ru所示的金属和金属氮化物组成的组中的至少一种形成 。 电容器电介质膜由选自ZrO 2，HfO 2，（Zr x，Hf 1-x）O 2（0

公开(公告)号：US06875667B2

公开(公告)日：2005-04-05

申请号：US10680217

申请日：2003-10-08

申请人： Toshihiro Iizuka ,  Tomoe Yamamoto

发明人： Toshihiro Iizuka ,  Tomoe Yamamoto

IPC分类号： H01L21/316 ,  H01L21/02 ,  H01L21/20 ,  H01L21/8242 ,  H01L27/108

CPC分类号： H01L27/10852 ,  H01L27/10811 ,  H01L27/10885 ,  H01L28/91

摘要： A capacitor is provided that is optimal for use in DRAM and has high dielectric constant, and allows leakage current flowing therethrough to be maintained at a low level, and further, permits dependence of the leakage current on temperatures to be small. That is, capacitor openings are formed in an inter layer silicon oxide layer and a TiN film is patterned so that TiN films are left only within the openings to form lower electrodes within the openings. Subsequently, a Zr- and/or Hf-containing oxide film (represented by the formula, multicomponent Zr.sub.x.Hf.sub.1-x.O.sub.2 film (0≦x≦1)) formed from a metal-containing organic compound as a reactant and a Ti-containing oxide film are laminated to form capacitor dielectrics. After deposition of the Zr- and/or Hf-containing oxide film, the Zr- and/or Hf-containing oxide film is subjected to heat treatment to be performed in an oxidizing ambient to remove residual carbon being retained in the Zr- and/or Hf-containing oxide film, leading to formation of a capacitor that is optimal for use in DRAM and has high dielectric constant, and allows leakage current flowing therethrough to be maintained at a low level.

摘要翻译： 提供了一种电容器，其优选用于DRAM并具有高介电常数，并且允许流过其的漏电流保持在低水平，并且还允许漏电流对温度的依赖性较小。 也就是说，电容器开口形成在层间氧化硅层中，并且TiN膜被图案化，使得TiN膜仅留在开口内以在开口内形成下电极。 随后，由一种由ZrO和/或Hf组成的Zr和/或Hf的氧化物膜（由式表示的多组分Zr.sub.Hf-xO.2薄膜（0 <= x <= 1）） 含金属的有机化合物作为反应物和含Ti氧化物膜层压以形成电容器电介质。 在沉积含Zr和/或Hf的氧化物膜之后，对含Zr和/或Hf的氧化物膜进行热处理以在氧化环境中进行，以除去保留在Zr和/ 或含Hf氧化物膜，导致形成最适用于DRAM并具有高介电常数的电容器，并允许流过其中的漏电流保持在低水平。

公开(公告)号：US06596602B2

公开(公告)日：2003-07-22

申请号：US10053598

申请日：2002-01-24

申请人： Toshihiro Iizuka ,  Tomoe Yamamoto

发明人： Toshihiro Iizuka ,  Tomoe Yamamoto

IPC分类号： H01L27108

CPC分类号： H01L21/02183 ,  H01L21/0214 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/02189 ,  H01L21/02197 ,  H01L21/022 ,  H01L21/0228 ,  H01L21/31691 ,  H01L28/55 ,  H01L28/56 ,  H01L28/91

摘要： The method for fabricating a semiconductor device in accordance with the present invention has the steps of: forming a metal film as a lower electrode of a capacitor on a semiconductor substrate, followed by forming a capacity insulator film over the lower electrode by the ALCVD process; and forming an upper electrode of the capacitor on the capacity insulator film.

摘要翻译： 根据本发明的制造半导体器件的方法具有以下步骤：在半导体衬底上形成作为电容器的下电极的金属膜，然后通过ALCVD工艺在下电极上形成电容绝缘膜; 以及在所述电容绝缘膜上形成所述电容器的上电极。

公开(公告)号：US07943475B2

公开(公告)日：2011-05-17

申请号：US11324536

申请日：2006-01-04

申请人： Tomoe Yamamoto ,  Toshihiro Iizuka

发明人： Tomoe Yamamoto ,  Toshihiro Iizuka

IPC分类号： H01L27/108 ,  H01L21/8242

CPC分类号： H01L21/02181 ,  H01L21/02189 ,  H01L21/0228 ,  H01L21/02329 ,  H01L21/02337 ,  H01L21/0234 ,  H01L21/3141 ,  H01L21/3142 ,  H01L21/3143 ,  H01L21/31641 ,  H01L21/31645 ,  H01L28/40 ,  H01L28/90 ,  H01L2924/0002 ,  Y10S257/906 ,  H01L2924/00

摘要： There is provided a semiconductor device comprising a dielectric film made of a high dielectric constant material, in which a leak current is reduced in the film and which exhibits improved device reliability. Specifically, a dielectric film 142 is a metal-compound film having a composition represented by the formula MOxCyNz wherein x, y and z meet the conditions: 0

摘要翻译： 提供了一种半导体器件，其包括由高介电常数材料制成的电介质膜，其中薄膜中的漏电流被降低并且具有提高的器件可靠性。 具体地说，电介质膜142是具有由式MOxCyNz表示的组成的金属化合物膜，其中x，y和z满足条件：0

公开(公告)号：US20060121671A1

公开(公告)日：2006-06-08

申请号：US11324536

申请日：2006-01-04

申请人： Tomoe Yamamoto ,  Toshihiro Iizuka

发明人： Tomoe Yamamoto ,  Toshihiro Iizuka

IPC分类号： H01L21/8242

CPC分类号： H01L21/02181 ,  H01L21/02189 ,  H01L21/0228 ,  H01L21/02329 ,  H01L21/02337 ,  H01L21/0234 ,  H01L21/3141 ,  H01L21/3142 ,  H01L21/3143 ,  H01L21/31641 ,  H01L21/31645 ,  H01L28/40 ,  H01L28/90 ,  H01L2924/0002 ,  Y10S257/906 ,  H01L2924/00

摘要： There is provided a semiconductor device comprising a dielectric film made of a high dielectric constant material, in which a leak current is reduced in the film and which exhibits improved device reliability. Specifically, a dielectric film 142 is a metal-compound film having a composition represented by the formula MOxCyNz wherein x, y and z meet the conditions: 0

摘要翻译： 提供了一种半导体器件，其包括由高介电常数材料制成的电介质膜，其中薄膜中的漏电流被降低并且具有提高的器件可靠性。 具体地说，电介质膜142是具有由下式表示的组成的金属化合物膜：其中x，y 和z满足条件：0