摘要:
A method of controlling a cache memory disposed between a CPU and a main memory, wherein pairs of data and an address to be written in the cache memory are stored into a buffer memory. A plurality of pairs of data and an address read from the buffer memory are processed to compare the address fields thereof. Based on results of the comparisons, there is determined a write control for writing the data in the cache memory which has been subdivided into a plurality of banks. As a result, the plural pairs of data and an address are written into the plural banks of the cache memory, the addresses of the respective pairs being different from each other. With the provisions set forth above, the write operation can be independently conducted for each bank of the cache memory, thereby improving the write throughput.
摘要:
A semiconductor integrated circuit device is provided which include a plurality of cell columns each having a number of unit cells previously fabricated on a semiconductor substrate selected from the plural kinds of unit cells which are formed in desired circuits by electrically connecting circuit devices previously arranged. Each column includes at least one kind of unit cell of a dynamic circuit which has a node in a floating state during the operation of the cell unit. A fixed potential shield layer is also provided on the cell columns so as to cover the nodes of the dynamic circuits. By virtue of this, a wiring area for electrically connecting the desired cell units can be located between the cell columns and above the shield layer. In other words, signal wirings in the wiring area can pass over the nodes of the dynamic circuits. without adverse parasitic effects. The unit cell can also be provided with a precharge circuit comprising a standard cell and an in-cell wiring layer. Further, clock input terminals of the unit cells which are provided with a precharge circuit can be divided into plural groups, with all of said clock input terminals belonging to the same group and having equal load capacitances being connected. Clock buffer cells can be provided for supplying clock signals to the clock signal wirings for each group.
摘要:
This invention discloses a clock distribution system which distributes a first clock signal as a reference clock as the reference for the phase and frequency to each processing unit (e.g. LSI) and generates a multi-phase second clock signal to be used in each processing unit by a delay circuit group whose delay time is adjusted. The clock distribution system comprises a clock generation block for generating a one-phase reference clock; a first control loop for comparing the phase of the reference clock with the phase of a feedback signal and adjusting the phase of the reference clock so that their phases are in agreement; and a second control loop including a delay circuit group consisting of a plurality of variable delay circuits to which the reference clock phase-adjusted by the first control loop is inputted and which are connected in series, and means for generating a multi-phase clock signal by use of the output signal of each of the plurality of variable delay circuits and the phase-adjusted referencde clock, controlling the delay time of the plurality of variable delay circuits so as to accomplish a predetermined relation with the period of the phase-adjusted reference clock and applying one of the multi-phase clock signals as the feedback signal described above to the first control loop.
摘要:
An output signal of a logic portion is inputted to the gate of FET inside an output buffer portion to inverse the signal polarity by this FET and is outputted through a bipolar transistor effecting an emitter follower operation or the like. An FET controlled by a clock signal is disposed between the base of the bipolar transistor and the ground and an FET which is turned ON during a pre-charge operation and when the bipolar transistor is OFF during logic calculation is disposed between the emitter and the ground so as to short-circuit the emitter and the ground during the pre-charge operation. In this manner, higher operation speed, higher integration density and high operation margin can be accomplished without losing the characteristic features of a Bi-CMOS dynamic logic circuit in its high operation speed and low power dissipation.
摘要:
A dynamic semiconductor logic circuit comprising a MOS FET logic section for effecting a high-speed logic operation in response to input logic signals after precharging of an output mode and internal nodes the logic section, a CMOS/BiCMOS output buffer section for outputting a result of the logic operation, and a noise suppression section for preventing erroneous operations without sacrificing the high-speed operation characteristic. The circuit, which is fabricated with 0.5-.mu.m-rule technology and operates at high speed with a low-voltage power source of 4.5 V or less, has a precharging section for precharging the output node and internal nodes of the MOS FET logic section and a noise suppression section for latching the output node of the logic section to the source potential by feeding back the output of an output buffer section in order to enlarge the soft error margin. The latching current is held at less than a predetermined ratio to maintain the high-speed operation characteristic.
摘要:
A first variable delay circuit delays the reception data from the transmitting unit which is outputted from an input buffer and generates the delayed data to a data unidentifying time detecting portion. First and second latches have latch timings at regular intervals before and after a latch timing of a third latch for receiving and outputting by second and third variable delay circuits, respectively. In an adjusting operation, delay amounts of the second and third variable delay circuits are fixed to a value which is sufficiently smaller than a transfer period, a delay amount of the variable delay circuit is increased, a judging circuit detects a preceding edge of the reception data, subsequently, the delay amounts of the second and third variable delay circuits are sequentially increased while maintaining to the same value, and a following edge of the reception data is detected. In this instance, the timing of the third latch is set to the optimum point of the maximum margin. In a normal operation, the judging circuit detects a deviation from the optimum point and the delay amount of the first variable delay circuit is finely adjusted in accordance with the detection, thereby maintaining the latch timing of the reception data at the optimum point.
摘要:
An information processing system includes a plurality of functional blocks (neurons) and a data bus for transmitting in common the outputs of the individual functional blocks (neurons). Data transaction among the functional blocks (neurons) is performed through the data bus on the time-division basis. For preventing the outputs from conflicting or competition, addresses are assigned to the individual blocks (neurons), respectively, so that only the functional blocks (neuron) having the own address designated by the address signal supplied through an address bus outputs data signal onto the data bus, while the other functional blocks (neurons) receive the information on the data bus as the signal originating in the functional block whose address is designated at that time point. The addresses are sequentially changed. During a round of the address signals, data are transmitted from given functional blocks (neurons) to other given functional blocks (neurons).
摘要:
A semiconductor integrated circuit device is provided which includes a logic circuit utilizing an error detection code. The device has a first circuit train including a series connection of plural stages of operation circuits for receiving input data, performing predetermined operations while the input data propagates through the operation circuits and providing output data; a second circuit train including a series connection of plural stages of error detection code correction circuits for receiving error detection code input corresponding to the input data, applying corrections to the error detection code in correspondence to the operations in the operation circuits in the first circuit train, and outputting an error detection code corresponding to the output data; and at least one error detection circuit for performing a comparison and check of the output of the operation circuit in the first circuit train and the output of a corresponding error detection code correction circuit in the second circuit train. Also, the semiconductor integrated circuit device of this invention comprises a logic circuit incorporating therein an error detection function by doubling the circuits which comprise a logic circuit using the error detection code, doubled operation circuits having the same function and inputted with the same signal, and a comparison circuit for mutually comparing the outputs of the doubled operation circuits.
摘要:
An output interface circuit comprises a CMOS circuit including a pair of complementary MOS transistors and receiving an input signal at the gates of the paired MOS transistors, a bipolar transistor having its base connected to the output of the CMOS circuit and its emitter from which an output signal is delivered, and a control circuit connected between the paired MOS transistors and operable, upon the fall of the output signal, to cut off a current flowing through any one of the paired MOS transistors so as to control the low level at the output of the CMOS circuit such that the low level does not fall before a potential level by which the low level of the output signal is permitted to be at a desirable predetermined potential level. Specifically, the CMOS circuit includes a pair of complementary MOS transistors comprised of a P-type MOS transistor and an N-type MOS transistor and receives an input signal of CMOS level to operate in inverter fashion. The bipolar transistor connected to the output of the CMOS circuit operates as an emitter follower to deliver an output signal of ECL level. Upon the fall of the output signal, the control circuit operates to cut off a current flowing through the N-type MOS transistor so as to control the low level at the output of the CMOS circuit such that the low level does not fall below a level which is about 0.5 to 0.8 volts higher than the low level of the output signal (ECL level) of the bipolar transistor.
摘要:
A semiconductor integrated circuit system having a function of automatically adjusting an output resistance value with reference to a temperature of an LSI which is operating. When a count value obtained from a counter by counting the output of a timer becomes equal to a predetermined value, a temperature sensor measures temperatures of LSIs. If a temperature fluctuation measured from a previous measured value is greater than a predetermined width, then a control apparatus issues an output resistance value adjustment request signal to output resistance adjustment units of the LSIs. When receiving the output resistance value adjustment request signal, the output resistance value adjustment units stop the signal transmission between the LSIs, adjust output resistance values of output circuits in such a manner that the output resistance values are matched with a characteristic impedance of a transmission line, and maintains the adjusted output resistance values until the output resistance value adjustment units receive next output resistance value adjustment request signal.