公开(公告)号：US4855013A

公开(公告)日：1989-08-08

申请号：US92348

申请日：1987-09-02

申请人： Kimihiro Ohta ,  Tadashi Nakagawa ,  Takeshi Kojima ,  Tsunenori Sakamoto ,  Naoyuki Kawai

发明人： Kimihiro Ohta ,  Tadashi Nakagawa ,  Takeshi Kojima ,  Tsunenori Sakamoto ,  Naoyuki Kawai

IPC分类号： C23C14/06 ,  C30B23/02

CPC分类号： C30B29/40 ,  C23C14/0617 ,  C30B23/002

摘要： A method for controlling the thickness of a thin crystal film which is grown in a vacuum atmosphere, comprising the steps of: generating an electron beam in the vacuum atmosphere; directing the electron beam thus generated to a crystal being grown to obtain a diffraction pattern of the crystal; detecting the variations in time of the intensity of the diffraction pattern thus obtained; obtaining the number of oscillations from the variations thus detected; and interrupting the growth of the crystal in synchronism with the oscillations of the intensity when the number reaches a predetermined number. The composition ratio of a mixed crystal can be also determined by the ratio among the frequency of oscillations of each crystal which constitutes the mixed crystal. The oscillations of the intensity of the RHEED pattern can be observed more than 400 times so that the thickness of the grown thin crystal film can be measured with the accuracy higher than 1000 .ANG. in terms of the mono-layer.

摘要翻译： 一种用于控制在真空气氛中生长的薄晶体膜的厚度的方法，包括以下步骤：在真空气氛中产生电子束; 将由此产生的电子束引导到正在生长的晶体上以获得晶体的衍射图案; 检测由此获得的衍射图的强度的时间变化; 从所检测的变化中获得振荡次数; 并且当数量达到预定数量时与强度的振荡同步地中断晶体的生长。 混合晶体的组成比也可以通过构成混合晶体的各晶体的振荡频率之比来确定。 可以观察到RHEED图案的强度的振荡超过400次，从而以单层为单位，以高于1000安培的精度测量生长的薄晶体膜的厚度。

公开(公告)号：US4411728A

公开(公告)日：1983-10-25

申请号：US248961

申请日：1981-03-30

申请人： Tsunenori Sakamoto

发明人： Tsunenori Sakamoto

IPC分类号： C30B23/02 ,  H01L21/203 ,  C30B25/04

CPC分类号： H01L21/02631 ,  C30B23/002 ,  H01L21/02381 ,  H01L21/0242 ,  H01L21/02507 ,  H01L21/02532 ,  H01L21/02546 ,  H01L21/02576 ,  H01L21/02579 ,  Y10S117/905 ,  Y10S148/072 ,  Y10S148/104 ,  Y10S148/16 ,  Y10S148/169 ,  Y10S438/925

摘要： In the manufacture of a superlattice by the MBE method, growth of an epitaxial film on a growth substrate is accomplished by disposing a P-type and an N-type impurity evaporation source at positions adjacent to a main evaporation source and symmetrical to each other relative to the main evaporation source and causing the molecular beams issuing from these evaporation sources to be projected through a mask onto the growth substrate. When the apparatus used for the aforementioned growth of the epitaxial film is additionally provided with a shutter adapted to open and close at least one of the impurity evaporation sources, the projections of the molecular beams can be controlled so as to produce an interdigital periodic structure element.

摘要翻译： 在通过MBE方法制造超晶格时，通过在与主蒸发源相邻的位置处设置P型和N型杂质蒸发源，并且相互对称地实现外延膜在生长衬底上的生长 并且使从这些蒸发源发出的分子束通过掩模投射到生长衬底上。 当用于上述外延膜生长的装置另外设置有适于打开和关闭杂质蒸发源中的至少一个的快门时，可以控制分子束的突起以产生叉指周期性结构元件 。

公开(公告)号：US06777159B1

公开(公告)日：2004-08-17

申请号：US09980212

申请日：2002-03-18

申请人： Hiroshi Itatani ,  Shunichi Matsumoto ,  Tarou Itatani ,  Tsunenori Sakamoto ,  Sucheta Gorwadkar ,  Masanori Komuro

发明人： Hiroshi Itatani ,  Shunichi Matsumoto ,  Tarou Itatani ,  Tsunenori Sakamoto ,  Sucheta Gorwadkar ,  Masanori Komuro

IPC分类号： G03F7004

CPC分类号： C08L79/08 ,  G03F7/0045 ,  G03F7/0233 ,  G03F7/0387 ,  G03F7/039 ,  G03F7/0392 ,  G03F7/0757 ,  Y10S430/106

摘要： This invention relates to a photosensitive polyimide material having positive-type or negative-type photosensitivity, which may be developed with a high resolution with an irradiation energy having short wavelength such as ultraviolet light or electron beam. The positive-type photosensitive polyimide composition comprising a solvent-soluble polyimide which shows positive-type photosensitivity in the presence of a photoacid generator, which is obtained by polycondensation of at least one aliphatic tetracarboxylic dianhydride and/or alicyclic tetracarboxylic dianhydride and at least one aliphatic diamine and/or alicyclic diamine and/or diaminosiloxane; and the photoacid generator. Since the polyimide has negative-type photosensitivity when irradiated with electron beam in the absence of a photoacid generator, a method for forming negative-type polyimide pattern using the polyimide is also provided.

摘要翻译： 本发明涉及具有正型或负型光敏性的光敏聚酰亚胺材料，其可以用具有短波长的照射能量如紫外光或电子束以高分辨率显影。 正型感光性聚酰亚胺组合物，其含有在光酸产生剂存在下显示正型感光性的溶剂可溶性聚酰亚胺，其通过至少一种脂肪族四羧酸二酐和/或脂环族四羧酸二酐与至少一种脂肪族四羧酸二酐的缩聚而得到 二胺和/或脂环族二胺和/或二氨基硅氧烷; 和光酸发生器。 由于在不存在光致酸发生剂的情况下，当用电子束照射聚酰亚胺时具有负型光敏性，因此也提供了使用该聚酰亚胺形成负型聚酰亚胺图案的方法。

公开(公告)号：US4046594A

公开(公告)日：1977-09-06

申请号：US670756

申请日：1976-03-26

申请人： Yasuo Tarui ,  Tsunenori Sakamoto ,  Yoshio Komiya

发明人： Yasuo Tarui ,  Tsunenori Sakamoto ,  Yoshio Komiya

IPC分类号： H01L31/04 ,  H01L27/142 ,  H01L31/0236 ,  H01L31/068 ,  H01L31/0687 ,  H01L31/06

CPC分类号： H01L31/0687 ,  H01L31/0236 ,  H01L31/0475 ,  Y02E10/544 ,  Y10S148/02 ,  Y10S148/051 ,  Y10S148/072 ,  Y10S148/12 ,  Y10S438/965

摘要： Disclosed is a solar battery comprising a multi-layered "p-n" junction structure, which has a plurality of inwardly converging recesses to partially expose the inner "p-n" junctions to the sun light.