公开(公告)号：US08835954B2

公开(公告)日：2014-09-16

申请号：US13221326

申请日：2011-08-30

申请人： Akira Fujimoto ,  Ryota Kitagawa ,  Kumi Masunaga ,  Kenji Nakamura ,  Tsutomu Nakanishi ,  Koji Asakawa ,  Takanobu Kamakura ,  Shinji Nunotani

发明人： Akira Fujimoto ,  Ryota Kitagawa ,  Kumi Masunaga ,  Kenji Nakamura ,  Tsutomu Nakanishi ,  Koji Asakawa ,  Takanobu Kamakura ,  Shinji Nunotani

IPC分类号： H01L33/60 ,  H01L33/40 ,  H01L33/38 ,  H01L33/00

CPC分类号： H01L33/405 ,  H01L33/0079 ,  H01L33/38 ,  H01L33/40 ,  H01L2933/0016

摘要： According to one embodiment, a semiconductor light emitting device includes a structure including a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer. The device also includes an electrode layer provided on the second semiconductor layer side of the structure. The electrode layer includes a metal portion with a thickness of not less than 10 nanometers and not more than 100 nanometers. A plurality of openings pierces the metal portion, each of the openings having an equivalent circle diameter of not less than 10 nanometers and not more than 5 micrometers. The device includes an inorganic film providing on the metal portion and inner surfaces of the openings, the inorganic film having transmittivity with respect to light emitted from the light emitting layer.

摘要翻译： 根据一个实施例，半导体发光器件包括包括第一导电类型的第一半导体层，第二导电类型的第二半导体层和设置在第一半导体层和第二半导体层之间的发光层的结构。 该器件还包括设置在该结构的第二半导体层侧上的电极层。 电极层包括厚度不小于10纳米且不大于100纳米的金属部分。 多个开口刺穿金属部分，每个开口具有不小于10纳米且不大于5微米的等效圆直径。 所述装置包括在所述金属部分和所述开口的内表面上提供的无机膜，所述无机膜相对于从所述发光层发射的光具有透射率。

公开(公告)号：US08692283B2

公开(公告)日：2014-04-08

申请号：US13407291

申请日：2012-02-28

申请人： Tsutomu Nakanishi ,  Akira Fujimoto ,  Ryota Kitagawa ,  Kumi Masunaga ,  Kenji Nakamura ,  Koji Asakawa ,  Shinji Nunotani ,  Takanobu Kamakura

发明人： Tsutomu Nakanishi ,  Akira Fujimoto ,  Ryota Kitagawa ,  Kumi Masunaga ,  Kenji Nakamura ,  Koji Asakawa ,  Shinji Nunotani ,  Takanobu Kamakura

IPC分类号： H01L33/40

CPC分类号： B82Y20/00 ,  B82Y40/00 ,  H01L33/42 ,  H01L51/5209

摘要： According to one embodiment, a light-transmitting metal electrode includes a metal layer. The metal layer is provided on a major surface of a member and includes a metal nanowire and a plurality of openings formed with the metal nanowire. The thin layer includes a plurality of first straight line parts along a first direction and a plurality of second straight line parts along a direction different from the first direction. A maximum length of the first line parts along the first direction and a maximum length of the second line parts along the direction different from the first direction are not more than a wave length of visible light. A ratio of an area of the metal layer viewed in a normal direction of the surface to an area of the metal layer viewed in the normal direction is more than 20% and not more than 80%.

摘要翻译： 根据一个实施例，透光金属电极包括金属层。 金属层设置在构件的主表面上，并且包括金属纳米线和由金属纳米线形成的多个开口。 薄层包括沿着第一方向的多个第一直线部分和沿着与第一方向不同的方向的多个第二直线部分。 沿着第一方向的第一线部分的最大长度和沿着与第一方向不同的方向的第二线部分的最大长度不大于可见光的波长。 从表面的法线方向观察的金属层的面积与从法线方向观察的金属层的面积的比例为20％以上且80％以下。

公开(公告)号：US08754431B2

公开(公告)日：2014-06-17

申请号：US13412044

申请日：2012-03-05

申请人： Akira Fujimoto ,  Tsutomu Nakanishi ,  Ryota Kitagawa ,  Kenji Nakamura ,  Shinji Nunotani ,  Takanobu Kamakura

发明人： Akira Fujimoto ,  Tsutomu Nakanishi ,  Ryota Kitagawa ,  Kenji Nakamura ,  Shinji Nunotani ,  Takanobu Kamakura

IPC分类号： H01L33/00 ,  H01L33/38 ,  H01L33/30 ,  H01L33/10

CPC分类号： H01L33/30 ,  H01L33/10 ,  H01L33/38

摘要： According to one embodiment, a semiconductor light emitting device includes first and second electrode layers, a and second semiconductor layers, a light emitting layer and a first intermediate layer. The first electrode layer has a metal portion having through-holes. The second electrode layer is stacked with the first electrode layer along a stacked direction, and light-reflective. The first semiconductor layer is provided between the first and second electrode layers, and has a first conductivity type. The second semiconductor layer is provided between the first semiconductor layer and the second electrode layer, and has a second conductivity type. The light emitting layer is provided between the first and second semiconductor layers. The first intermediate layer is provided between the second semiconductor layer and the second electrode layer, transmissive to light emitted from the light emitting layer, and includes first contact portions and a first non-contact portion.

摘要翻译： 根据一个实施例，半导体发光器件包括第一和第二电极层，第一和第二半导体层，发光层和第一中间层。 第一电极层具有具有通孔的金属部分。 第二电极层沿堆叠方向与第一电极层堆叠并且具有光反射性。 第一半导体层设置在第一和第二电极层之间，并且具有第一导电类型。 第二半导体层设置在第一半导体层和第二电极层之间，具有第二导电型。 发光层设置在第一和第二半导体层之间。 第一中间层设置在第二半导体层和第二电极层之间，对从发光层发射的光透射，并且包括第一接触部分和第一非接触部分。

公开(公告)号：US08450824B2

公开(公告)日：2013-05-28

申请号：US13405935

申请日：2012-02-27

申请人： Kenji Nakamura ,  Akira Fujimoto ,  Tsutomu Nakanishi ,  Ryota Kitagawa ,  Shinji Nunotani ,  Takanobu Kamakura

发明人： Kenji Nakamura ,  Akira Fujimoto ,  Tsutomu Nakanishi ,  Ryota Kitagawa ,  Shinji Nunotani ,  Takanobu Kamakura

IPC分类号： H01L27/146

CPC分类号： H01L31/022425 ,  H01L33/38 ,  H01L33/42 ,  Y02E10/50

摘要： According to one embodiment, an optically transmissive metal electrode includes a plurality of first and second metal wires. The first metal wires are disposed along a first direction, and extend along a second direction intersecting the first direction. The second metal wires are disposed along a third direction parallel with a plane including the first and second directions and intersecting the first direction, contact the first metal wires, and extend along a fourth direction parallel with the plane and intersecting the third direction. A first pitch between centers of the first metal wires is not more than a shortest wavelength in a waveband including visible light. A second pitch between centers of the second metal wires exceeds a longest wavelength in the waveband. A thickness of the first and second metal wires along a direction vertical to the plane is not more than the shortest wavelength.

摘要翻译： 根据一个实施例，透光金属电极包括多个第一和第二金属线。 第一金属线沿着第一方向设置，并且沿着与第一方向相交的第二方向延伸。 第二金属线沿着与包括第一和第二方向的平面平行的第三方向设置并且与第一方向相交，与第一金属线接触，并且沿与平面平行并与第三方向相交的第四方向延伸。 第一金属线的中心之间的第一间距在包括可见光的波段中不超过最短波长。 第二金属线的中心之间的第二间距在波段中超过最长波长。 第一和第二金属线沿垂直于该平面的方向的厚度不大于最短波长。

公开(公告)号：US20130075762A1

公开(公告)日：2013-03-28

申请号：US13405935

申请日：2012-02-27

申请人： Kenji NAKAMURA ,  Akira Fujimoto ,  Tsutomu Nakanishi ,  Ryota Kitagawa ,  Shinji Nunotani ,  Takanobu Kamakura

发明人： Kenji NAKAMURA ,  Akira Fujimoto ,  Tsutomu Nakanishi ,  Ryota Kitagawa ,  Shinji Nunotani ,  Takanobu Kamakura

IPC分类号： H01L33/62 ,  H05K1/00 ,  H01L31/0224

CPC分类号： H01L31/022425 ,  H01L33/38 ,  H01L33/42 ,  Y02E10/50

摘要： According to one embodiment, an optically transmissive metal electrode includes a plurality of first and second metal wires. The first metal wires are disposed along a first direction, and extend along a second direction intersecting the first direction. The second metal wires are disposed along a third direction parallel with a plane including the first and second directions and intersecting the first direction, contact the first metal wires, and extend along a fourth direction parallel with the plane and intersecting the third direction. A first pitch between centers of the first metal wires is not more than a shortest wavelength in a waveband including visible light. A second pitch between centers of the second metal wires exceeds a longest wavelength in the waveband. A thickness of the first and second metal wires along a direction vertical to the plane is not more than the shortest wavelength.

摘要翻译： 根据一个实施例，透光金属电极包括多个第一和第二金属线。 第一金属线沿着第一方向设置，并且沿着与第一方向相交的第二方向延伸。 第二金属线沿着与包括第一和第二方向的平面平行的第三方向设置并且与第一方向相交，与第一金属线接触，并且沿与平面平行并与第三方向相交的第四方向延伸。 第一金属线的中心之间的第一间距在包括可见光的波段中不超过最短波长。 第二金属线的中心之间的第二间距在波段中超过最长波长。 第一和第二金属线沿垂直于该平面的方向的厚度不大于最短波长。

公开(公告)号：US09136405B2

公开(公告)日：2015-09-15

申请号：US12700063

申请日：2010-02-04

申请人： Eishi Tsutsumi ,  Kumi Masunaga ,  Ryota Kitagawa ,  Tsutomu Nakanishi ,  Akira Fujimoto ,  Hideyuki Nishizawa ,  Koji Asakawa

发明人： Eishi Tsutsumi ,  Kumi Masunaga ,  Ryota Kitagawa ,  Tsutomu Nakanishi ,  Akira Fujimoto ,  Hideyuki Nishizawa ,  Koji Asakawa

IPC分类号： H01L31/00 ,  H01L31/18 ,  H01L31/0224 ,  H01L31/0392 ,  H01L31/075

CPC分类号： H01L31/022433 ,  H01L31/03921 ,  H01L31/075 ,  H01L31/1884 ,  Y02E10/548

摘要： The present invention provides a light transmission type solar cell excellent in both power generation efficiency and light transparency, and also provides a method for producing that solar cell. The solar cell of the present invention comprises a photoelectric conversion layer, a light-incident side electrode layer, and a counter electrode layer. The incident side electrode layer is provided with plural openings bored through the layer, and has a thickness of 10 nm to 200 nm. Each of the openings occupies an area of 80 nm2 to 0.8 μm2, and the opening ratio is in the range of 10% to 66%. The transmittance of the whole cell is 5% or more at 700 nm wavelength. The incident side electrode layer can be formed by etching fabrication with a stamper. In the etching fabrication, a mono-particle layer of fine particles or a dot pattern formed by self-assembled block copolymer can be used as a mask.

摘要翻译： 本发明提供一种发光效率和光透射性优异的透光型太阳能电池，并且还提供一种太阳能电池的制造方法。 本发明的太阳能电池包括光电转换层，光入射侧电极层和对电极层。 入射侧电极层设置有穿过层的多个开口，并且具有10nm至200nm的厚度。 每个开口占据80nm 2至0.8μm2的面积，并且开口率在10％至66％的范围内。 在700nm波长下，全细胞的透射率为5％以上。 入射侧电极层可以通过用压模进行蚀刻制造来形成。 在蚀刻制造中，可以使用通过自组装嵌段共聚物形成的细颗粒的单粒子层或点图案作为掩模。

公开(公告)号：US20130092219A1

公开(公告)日：2013-04-18

申请号：US13619360

申请日：2012-09-14

申请人： Eishi TSUTSUMI ,  Kumi Masunaga ,  Ryota Kitagawa ,  Tsutomu Nakanishi ,  Akira Fujimoto ,  Koji Asakawa

发明人： Eishi TSUTSUMI ,  Kumi Masunaga ,  Ryota Kitagawa ,  Tsutomu Nakanishi ,  Akira Fujimoto ,  Koji Asakawa

IPC分类号： H01L31/0224

CPC分类号： H01L31/022425 ,  H01L31/02168 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： The present invention provides a solar cell comprising a laminate of a photoelectric conversion layer, a metal porous membrane and a refractive index adjusting layer. The metal porous membrane is positioned on the light-incident side, is directly in contact with the photoelectric conversion layer, and has plural openings bored though the membrane. The refractive index adjusting layer covers at least a part of the surface of the metal porous membrane and of the inner surfaces of the openings, and has a refractive index of 1.35 to 4.2 inclusive. If adopting a nano-fabricated metal membrane as an electrode, the present invention enables to provide a solar cell capable of realizing efficient photoelectric conversion by use of electric field-enhancement effect.

摘要翻译： 本发明提供一种太阳能电池，其包括光电转换层，金属多孔膜和折射率调节层的层压体。 金属多孔膜位于光入射侧，与光电转换层直接接触，并且具有通过膜而钻出的多个开口。 折射率调节层覆盖金属多孔膜的表面和开口的内表面的至少一部分，折射率为1.35〜4.2。 如果采用纳米制造的金属膜作为电极，则本发明能够提供能够通过使用电场增强效果实现有效的光电转换的太阳能电池。

公开(公告)号：US20120042946A1

公开(公告)日：2012-02-23

申请号：US13216977

申请日：2011-08-24

申请人： Kumi Masunaga ,  Akira Fujimoto ,  Tsutomu Nakanishi ,  Eishi Tsutsumi ,  Ryota Kitagawa ,  Koji Asakawa ,  Hideyuki Nishizawa

发明人： Kumi Masunaga ,  Akira Fujimoto ,  Tsutomu Nakanishi ,  Eishi Tsutsumi ,  Ryota Kitagawa ,  Koji Asakawa ,  Hideyuki Nishizawa

IPC分类号： H01L31/0224 ,  H01L31/18

CPC分类号： H01L31/0236 ,  H01L31/022433 ,  Y02E10/50

摘要： The embodiment provides a solar cell and a manufacturing process thereof. The solar cell is equipped with an electrode on the light incident surface side; and the electrode has both low resistivity and high transparency, can efficiently utilize solar light for excitation of carriers, and can be made of inexpensive materials. The solar cell comprises a photoelectric conversion layer, a first electrode layer arranged on the light incident surface side, and a second electrode layer arranged opposed to the first electrode layer. The first electrode layer has a thickness in the range of 10 to 200 nm, and has plural penetrating openings. Each of the individual openings occupies an area in the range of 80 nm2 to 0.8 μm2, and the aperture ratio thereof is in the range 10 to 66%. The first electrode layer in the cell can be produced by etching procedure using an etching mask obtained by use of a single particle layer of fine particles, by use of a dot pattern formed by self-assembly of a block copolymer, or by use of a stamper.

摘要翻译： 本实施例提供一种太阳能电池及其制造方法。 太阳能电池在光入射面侧配备有电极; 并且电极具有低电阻率和高透明度，可以有效地利用太阳光用于载流子的激发，并且可以由廉价的材料制成。 太阳能电池包括光电转换层，布置在光入射表面侧的第一电极层和与第一电极层相对布置的第二电极层。 第一电极层的厚度为10〜200nm，具有多个贯通孔。 每个单独的开口占据在80nm 2至0.8μm2范围内的面积，并且其开口率在10至66％的范围内。 电池中的第一电极层可以通过使用通过使用单颗粒细小颗粒层获得的蚀刻掩模，通过使用通过嵌段共聚物的自组装形成的点图案或通过使用 压模。

公开(公告)号：US20100236619A1

公开(公告)日：2010-09-23

申请号：US12700063

申请日：2010-02-04

申请人： Eishi TSUTSUMI ,  Kumi Masunaga ,  Ryota Kitagawa ,  Tsutomu Nakanishi ,  Akira Fujimoto ,  Hideyuki Nishizawa ,  Koji Asakawa

发明人： Eishi TSUTSUMI ,  Kumi Masunaga ,  Ryota Kitagawa ,  Tsutomu Nakanishi ,  Akira Fujimoto ,  Hideyuki Nishizawa ,  Koji Asakawa

IPC分类号： H01L31/00 ,  H01L31/18

CPC分类号： H01L31/022433 ,  H01L31/03921 ,  H01L31/075 ,  H01L31/1884 ,  Y02E10/548

摘要： The present invention provides a light transmission type solar cell excellent in both power generation efficiency and light transparency, and also provides a method for producing that solar cell. The solar cell of the present invention comprises a photoelectric conversion layer, a light-incident side electrode layer, and a counter electrode layer. The incident side electrode layer is provided with plural openings bored through the layer, and has a thickness of 10 nm to 200 nm. Each of the openings occupies an area of 80 nm2 to 0.8 μm2, and the opening ratio is in the range of 10% to 66%. The transmittance of the whole cell is 5% or more at 700 nm wavelength. The incident side electrode layer can be formed by etching fabrication with a stamper. In the etching fabrication, a mono-particle layer of fine particles or a dot pattern formed by self-assembled block copolymer can be used as a mask.

摘要翻译： 本发明提供一种发光效率和光透射性优异的透光型太阳能电池，并且还提供一种太阳能电池的制造方法。 本发明的太阳能电池包括光电转换层，光入射侧电极层和对电极层。 入射侧电极层设置有穿过层的多个开口，并且具有10nm至200nm的厚度。 每个开口占据80nm 2至0.8μm2的面积，并且开口率在10％至66％的范围内。 在700nm波长下，全细胞的透射率为5％以上。 入射侧电极层可以通过用压模进行蚀刻制造来形成。 在蚀刻制造中，可以使用通过自组装嵌段共聚物形成的细颗粒的单粒子层或点图案作为掩模。

公开(公告)号：US08993869B2

公开(公告)日：2015-03-31

申请号：US13422728

申请日：2012-03-16

申请人： Akira Fujimoto ,  Tsutomu Nakanishi ,  Kenji Nakamura ,  Kumi Masunaga ,  Koji Asakawa

发明人： Akira Fujimoto ,  Tsutomu Nakanishi ,  Kenji Nakamura ,  Kumi Masunaga ,  Koji Asakawa

IPC分类号： H01L31/0232 ,  H01L31/0224 ,  H01L31/0216 ,  H01L31/0288

CPC分类号： H01L31/022425 ,  H01L31/02168 ,  H01L31/0288 ,  Y02E10/50

摘要： A photoelectric conversion element includes a photoelectric conversion layer to include a first metal layer, a semiconductor layer, and a second metal layer, all of which are laminated. In addition, at least one of the first metal layer and the second metal layer is a nano-mesh metal having a plurality of through holes or a dot metal having a plurality of metal dots arranged separately from each other on the semiconductor layer. The photoelectric conversion layer includes a long-wavelength absorption layer containing an impurity which is different from impurities for p-type doping and n-type doping of the semiconductor layer. The long-wavelength absorption layer is within a depth of 5 nm from the nano-mesh metal or the dot metal.

摘要翻译： 光电转换元件包括光电转换层，其包括第一金属层，半导体层和第二金属层，所有这些都被层压。 此外，第一金属层和第二金属层中的至少一个是具有多个通孔的纳米网状金属或具有在半导体层上彼此分开设置的多个金属点的点状金属。 光电转换层包括含有杂质的长波长吸收层，该杂质与p型掺杂和半导体层的n型掺杂不同。 长波长吸收层距离纳米网状金属或点状金属为5nm以下。