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1.发明授权Reflective mask blank, reflective mask, and method of manufacturing semiconductor device 有权反光掩模板，反射掩模和半导体器件的制造方法公开(公告)号：US07700245B2
公开(公告)日：2010-04-20
申请号：US11416208
申请日：2006-05-03
申请人： Morio Hosoya , Tsutomu Shoki
发明人： Morio Hosoya , Tsutomu Shoki
CPC分类号： G03F1/24 , B82Y10/00 , B82Y40/00 , C03C17/36 , C03C17/3615 , C03C17/3626 , C03C17/3634 , C03C17/3639 , C03C17/3649 , C03C17/3665 , G21K1/062 , Y10T428/31616
摘要： A reflective mask blank and a reflective mask each have, on a multilayer reflective film, a protective film that protects the multilayer reflective film from etching during pattern formation of an absorber layer or a buffer layer formed on the protective film. The protective film is formed by a ruthenium compound containing ruthenium (Ru) and at least one selected from the group consisting of molybdenum (Mo), niobium (Nb), zirconium (Zr), yttrium (Y), boron (B), titanium (Ti), and lanthanum (La). A reflection enhancement film of Ru may be further formed on the surface of the protective film.
摘要翻译： 反射掩模坯料和反射掩模在多层反射膜上具有保护膜，该保护膜在形成在保护膜上的吸收层或缓冲层的图案形成期间保护多层反射膜免受蚀刻。 保护膜由含有钌（Ru）的钌化合物和选自钼（Mo），铌（Nb），锆（Zr），钇（Y），硼（B），钛 （Ti）和镧（La）。 可以在保护膜的表面上进一步形成Ru的反射增强膜。
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2.发明授权Reflection type mask blank and reflection type mask and production methods for them 有权反射型面罩坯料和反光型面膜及其制作方法公开(公告)号：US07390596B2
公开(公告)日：2008-06-24
申请号：US10510916
申请日：2003-04-11
摘要： A reflective mask blank has a substrate (11) on which a reflective layer (12) for reflecting exposure light in a short-wavelength region including an extreme ultraviolet region and an absorber layer (16) for absorbing the exposure light are successively formed. The absorber layer (16) has an at least two-layer structure including as a lower layer an exposure light absorbing layer (14) formed by an absorber for the exposure light in the short-wavelength region including the extreme ultraviolet region and as an upper layer a low-reflectivity layer (15) formed by an absorber for inspection light used in inspection of a mask pattern. The upper layer is made of a material containing tantalum (Ta), boron (B), and nitrogen (N). The content of B is 5 at % to 30 at %. The ratio of Ta and N (Ta:N) falls within a range of 8:1 to 2:7. Alternatively, the reflective mask blank has a substrate on which a multilayer reflective film and an absorber layer are successively formed. In this case, the absorber layer is made of a material containing tantalum (Ta), boron (B), and nitrogen (N). The content of B is 5 at % to 25 at %. The ratio of Ta and N (Ta:N) falls within a range of 8:1 to 2:7.
摘要翻译： 反射掩模板具有基板（11），在基板（11）上依次形成反射层（12），反射层（12）用于反射在包括极紫外区域的短波长区域中的曝光和用于吸收曝光光的吸收层（16）。 吸收层（16）具有至少两层结构，其包括作为下层的曝光用光吸收层（14），该曝光用光吸收层由包含极紫外区域的短波长区域中的曝光用光的吸收体形成， 层叠由用于检查掩模图案的检查光的吸收体形成的低反射率层（15）。 上层由含有钽（Ta），硼（B）和氮（N）的材料制成。 B的含量为5原子％至30原子％。 Ta和N（Ta：N）的比例落在8:1-2:7的范围内。 或者，反射掩模坯料具有依次形成有多层反射膜和吸收体层的基板。 在这种情况下，吸收层由含有钽（Ta），硼（B）和氮（N）的材料制成。 B的含量为5原子％至25原子％。 Ta和N（Ta：N）的比例落在8:1-2:7的范围内。
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3.发明申请Reflective mask blank, reflective mask, and method of manufacturing semiconductor device 有权反光掩模板，反射掩模和半导体器件的制造方法公开(公告)号：US20070275308A1
公开(公告)日：2007-11-29
申请号：US11416208
申请日：2006-05-03
申请人： Morio Hosoya , Tsutomu Shoki
发明人： Morio Hosoya , Tsutomu Shoki
CPC分类号： G03F1/24 , B82Y10/00 , B82Y40/00 , C03C17/36 , C03C17/3615 , C03C17/3626 , C03C17/3634 , C03C17/3639 , C03C17/3649 , C03C17/3665 , G21K1/062 , Y10T428/31616
摘要： A reflective mask blank and a reflective mask each have, on a multilayer reflective film, a protective film that protects the multilayer reflective film from etching during pattern formation of an absorber layer or a buffer layer formed on the protective film. The protective film is formed by a ruthenium compound containing ruthenium (Ru) and at least one selected from the group consisting of molybdenum (Mo), niobium (Nb), zirconium (Zr), yttrium (Y), boron (B), titanium (Ti), and lanthanum (La). A reflection enhancement film of Ru may be further formed on the surface of the protective film.
摘要翻译： 反射掩模坯料和反射掩模在多层反射膜上具有保护膜，该保护膜在形成在保护膜上的吸收层或缓冲层的图案形成期间保护多层反射膜免受蚀刻。 保护膜由含有钌（Ru）的钌化合物和选自钼（Mo），铌（Nb），锆（Zr），钇（Y），硼（B），钛 （Ti）和镧（La）。 可以在保护膜的表面上进一步形成Ru的反射增强膜。
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4.发明授权Method of manufacturing a reflection type mask blank and method of manufacturing a reflection type mask 失效反射型掩模毛坯的制造方法和反射型掩模的制造方法公开(公告)号：US07056627B2
公开(公告)日：2006-06-06
申请号：US10644964
申请日：2003-08-21
申请人： Tsutomu Shoki , Morio Hosoya , Takeru Kinoshita
发明人： Tsutomu Shoki , Morio Hosoya , Takeru Kinoshita
IPC分类号： G01F9/00
CPC分类号： B82Y10/00 , B82Y40/00 , C03C17/3482 , G03F1/24
摘要： A method of manufacturing a reflection type mask blank by forming a multilayer reflection film reflecting exposure light on a substrate and forming an absorber layer absorbing the exposure light on the multilayer reflection film includes a step of forming, between the substrate and the multilayer reflection film, a stress correction film opposite in direction to film stress of the multilayer reflection film and smaller in absolute value than the film stress of the multilayer reflection film, a step of heat-treating the stress correction film, and a step of heat-treating the multilayer reflection film.
摘要翻译： 通过在基板上形成反射曝光的多层反射膜和在多层反射膜上形成吸收曝光光的吸收体层来形成反射型掩模坯料的方法包括在基板和多层反射膜之间形成步骤， 与多层反射膜的膜应力相反的应力校正膜，绝对值比多层反射膜的膜应力小，应力校正膜的热处理步骤，以及对多层反射膜进行热处理的工序 反射膜。
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5.发明申请Substrate with a multilayer reflection film, reflection type mask blank for exposure, reflection type mask for exposure and methods of manufacturing them 审中-公开具有多层反射膜的基板，用于曝光的反射型掩模板，用于曝光的反射型掩模及其制造方法公开(公告)号：US20050238922A1
公开(公告)日：2005-10-27
申请号：US11017873
申请日：2004-12-22
申请人： Takeru Kinoshita , Morio Hosoya , Tsutomu Shoki
发明人： Takeru Kinoshita , Morio Hosoya , Tsutomu Shoki
CPC分类号： C03C17/36 , B82Y10/00 , B82Y40/00 , C03C17/3435 , C03C17/3441 , C03C17/3618 , C03C17/3626 , C03C17/3649 , C03C17/3665 , C03C2218/328 , C03C2218/33 , G03F1/24 , G03F1/38 , G03F7/707 , G03F7/70708 , G21K2201/067
摘要： A multilayer-reflection-film-coated substrate includes a substrate, a multilayer reflection film formed on the substrate and reflecting an exposure light, and a conductive film formed on an opposite side of the substrate from the multilayer reflection film in a region excluding at least a peripheral portion of the substrate. The conductive film is made of a material containing chromium (Cr). The conductive film contains nitrogen (N) on a substrate side and at least one of oxygen (O) and carbon (C) on a surface side. A reflection type mask blank for exposure is obtained by forming an absorber film for absorbing the exposure light on the multilayer reflection film of the multilayer-reflection-film-coated substrate. A reflection type mask is obtained by forming a pattern on the absorber film of the reflection type mask blank for exposure.
摘要翻译： 多层反射膜被覆基板包括：基板，形成在基板上的反射曝光用的多层反射膜，以及形成在基板的与多层反射膜相反的一侧的导电膜， 基板的周边部分。 导电膜由含有铬（Cr）的材料制成。 导电膜在基板侧含有氮（N），表面上含有氧（O）和碳（C）中的至少一种。 通过在多层反射膜涂覆的基板的多层反射膜上形成用于吸收曝光的吸收膜来获得用于曝光的反射型掩模坯料。 通过在用于曝光的反射型掩模坯料的吸收膜上形成图案来获得反射型掩模。
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6.发明授权Reflection type mask blank for EUV exposure and reflection type mask for EUV exposure as well as method of producing the mask 有权用于EUV曝光的EUV曝光和反射型掩模的反射型掩模空白以及产生掩模的方法公开(公告)号：US06749973B2
公开(公告)日：2004-06-15
申请号：US10073874
申请日：2002-02-14
申请人： Tsutomu Shoki , Morio Hosoya
发明人： Tsutomu Shoki , Morio Hosoya
IPC分类号： G03F900
摘要： In a reflection type mask blank for EUV exposure, a multilayer film is formed on a substrate to reflect EUV light. An intermediate layer is formed on the multilayer film. An absorber layer is formed on the intermediate layer to absorb the EUV light. The intermediate layer is formed by a material containing Cr and at least one element selected from the group consisting of N, O, and C.
摘要翻译： 在用于EUV曝光的反射型掩模空白中，在基板上形成多层膜以反射EUV光。 在该多层膜上形成中间层。 在中间层上形成吸收层以吸收EUV光。 中间层由含有Cr和至少一种选自N，O和C的元素的材料形成。
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7.发明授权Substrate with multilayer film, reflection type mask blank for exposure, reflection type mask for exposure and production method thereof as well as production method of semiconductor device 有权具有多层膜的基板，用于曝光的反射型掩模板，用于曝光的反射型掩模及其制造方法以及半导体器件的制造方法公开(公告)号：US06737201B2
公开(公告)日：2004-05-18
申请号：US09987990
申请日：2001-11-16
申请人： Tsutomu Shoki , Morio Hosoya
发明人： Tsutomu Shoki , Morio Hosoya
IPC分类号： G03F900
摘要： In a reflection type mask blank for EUV exposure with a substrate, a multilayer film is formed on the substrate so as to reflect an EUV light ray. A light absorber layer is formed on the multilayer film so as to absorb the EUV light ray. The multilayer film has flatness with respect to a surface thereof, and the flatness is 100 nm or less.
摘要翻译： 在用基板进行EUV曝光的反射型掩模坯料中，在基板上形成多层膜以反射EUV光线。 在多层膜上形成吸光层以吸收EUV光线。 多层膜相对于其表面具有平坦度，平坦度为100nm以下。
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8.发明授权Reflective mask blank, reflective mask and methods of producing the mask blank and the mask 有权反光面罩坯料，反光罩和生产面罩坯料和面膜的方法公开(公告)号：US07981573B2
公开(公告)日：2011-07-19
申请号：US12116550
申请日：2008-05-07
IPC分类号： G03F1/00
摘要： A reflective mask blank has a substrate (11) on which a reflective layer (12) for reflecting exposure light in a short-wavelength region including an extreme ultraviolet region and an absorber layer (16) for absorbing the exposure light are successively formed. The absorber layer (16) has an at least two-layer structure including as a lower layer an exposure light absorbing layer (14) formed by an absorber for the exposure light in the short-wavelength region including the extreme ultraviolet region and as an upper layer a low-reflectivity layer (15) formed by an absorber for inspection light used in inspection of a mask pattern. The upper layer is made of a material containing tantalum (Ta), boron (B), and nitrogen (N). The content of B is 5 at % to 30 at %. The ratio of Ta and N (Ta:N) falls within a range of 8:1 to 2:7. Alternatively, the reflective mask blank has a substrate on which a multilayer reflective film and an absorber layer are successively formed. In this case, the absorber layer is made of a material containing tantalum (Ta), boron (B), and nitrogen (N). The content of B is 5 at % to 25 at %. The ratio of Ta and N (Ta:N) falls within a range of 8:1 to 2:7.
摘要翻译： 反射掩模板具有基板（11），在基板（11）上依次形成反射层（12），反射层（12）用于反射在包括极紫外区域的短波长区域中的曝光和用于吸收曝光光的吸收层（16）。 吸收层（16）具有至少两层结构，其包括作为下层的曝光用光吸收层（14），该曝光用光吸收层由包含极紫外区域的短波长区域中的曝光用光的吸收体形成， 层叠由用于检查掩模图案的检查光的吸收体形成的低反射率层（15）。 上层由含有钽（Ta），硼（B）和氮（N）的材料制成。 B的含量为5原子％至30原子％。 Ta和N（Ta：N）的比例落在8:1-2:7的范围内。 或者，反射掩模坯料具有依次形成有多层反射膜和吸收体层的基板。 在这种情况下，吸收层由含有钽（Ta），硼（B）和氮（N）的材料制成。 B的含量为5原子％至25原子％。 Ta和N（Ta：N）的比例落在8:1-2:7的范围内。
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9.发明申请Reflection type mask blank and reflection type mask and production methods for them 有权反射型面罩坯料和反光型面膜及其制作方法公开(公告)号：US20050208389A1
公开(公告)日：2005-09-22
申请号：US10510916
申请日：2003-04-11
IPC分类号： G03F1/52 , G03F1/00 , G03F1/50 , H01L21/027 , G03F9/00
摘要： A reflective mask blank has a substrate (11) on which a reflective layer (12) for reflecting exposure light in a short-wavelength region including an extreme ultraviolet region and an absorber layer (16) for absorbing the exposure light are successively formed. The absorber layer (16) has an at least two-layer structure including as a lower layer an exposure light absorbing layer (14) formed by an absorber for the exposure light in the short-wavelength region including the extreme ultraviolet region and as an upper layer a low-reflectivity layer (15) formed by an absorber for inspection light used in inspection of a mask pattern. The upper layer is made of a material containing tantalum (Ta), boron (B), and nitrogen (N). The content of B is 5 at % to 30 at %. The ratio of Ta and N (Ta:N) falls within a range of 8:1 to 2:7. Alternatively, the reflective mask blank has a substrate on which a multilayer reflective film and an absorber layer are successively formed. In this case, the absorber layer is made of a material containing tantalum (Ta), boron (B), and nitrogen (N). The content of B is 5 at % to 25 at %. The ratio of Ta and N (Ta:N) falls within a range of 8:1 to 2:7.
摘要翻译： 反射掩模板具有基板（11），在基板（11）上依次形成反射层（12），反射层（12）用于反射在包括极紫外区域的短波长区域中的曝光和用于吸收曝光光的吸收层（16）。 吸收层（16）具有至少两层结构，其包括作为下层的曝光用光吸收层（14），该曝光用光吸收层由包含极紫外区域的短波长区域中的曝光用光的吸收体形成， 层叠由用于检查掩模图案的检查光的吸收体形成的低反射率层（15）。 上层由含有钽（Ta），硼（B）和氮（N）的材料制成。 B的含量为5原子％至30原子％。 Ta和N（Ta：N）的比例落在8:1-2:7的范围内。 或者，反射掩模坯料具有依次形成有多层反射膜和吸收体层的基板。 在这种情况下，吸收层由含有钽（Ta），硼（B）和氮（N）的材料制成。 B的含量为5原子％至25原子％。 Ta和N（Ta：N）的比例落在8:1-2:7的范围内。
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10.发明申请Method of manufacturing a reflection type mask blank and method of manufacturing a reflection type mask 失效反射型掩模毛坯的制造方法和反射型掩模的制造方法公开(公告)号：US20050100797A1
公开(公告)日：2005-05-12
申请号：US10644964
申请日：2003-08-21
申请人： Tsutomu Shoki , Morio Hosoya , Takeru Kinoshita
发明人： Tsutomu Shoki , Morio Hosoya , Takeru Kinoshita
CPC分类号： B82Y10/00 , B82Y40/00 , C03C17/3482 , G03F1/24
摘要： A method of manufacturing a reflection type mask blank by forming a multilayer reflection film reflecting exposure light on a substrate and forming an absorber layer absorbing the exposure light on the multilayer reflection film includes a step of forming, between the substrate and the multilayer reflection film, a stress correction film opposite in direction to film stress of the multilayer reflection film and smaller in absolute value than the film stress of the multilayer reflection film, a step of heat-treating the stress correction film, and a step of heat-treating the multilayer reflection film.
摘要翻译： 通过在基板上形成反射曝光的多层反射膜和在多层反射膜上形成吸收曝光光的吸收体层来形成反射型掩模坯料的方法包括在基板和多层反射膜之间形成步骤， 与多层反射膜的膜应力相反的应力校正膜，绝对值比多层反射膜的膜应力小，应力校正膜的热处理步骤，以及对多层反射膜进行热处理的工序 反射膜。
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