摘要:
A reluctance motor according to an aspect of an embodiment includes a stator and a mover. One of the stator and the mover includes a plurality of magnetic poles on which coils are wound. The other of the stator and the mover includes a magnetic segment that includes a directivity member of which the magnetization direction is regulated in a predetermined direction and that is embedded into a non-magnetic holder.
摘要:
A solid-state image sensor includes a pixel array, and an analog to digital converter for converting a voltage signal read from the pixel array from analog to digital form, wherein the analog to digital converter includes a counter counting a first clock signal for a period depending on a voltage value of the voltage signal, and wherein a least significant bit of a count value of the counter is determined based on an exclusive OR of outputs of two 1-bit counters operating at a frequency of the first clock signal.
摘要:
An imaging device provided with a read circuit in which a light-shielding region is formed in a part of an image region where a plurality of optical/electrical conversion devices is two-dimensionally arrayed in the row and column directions and which converts a optically detected signal outputted from each of the optical/electrical conversion devices for each of the column into a digital signal, comprises a storage device for storing the outputted digital signal outputted in relation with the optical/electrical conversion device in the light-shielding region and a difference calculation device for calculating a difference between the outputted digital signal in relation with the optical/electrical conversion device in a light-receiving region except the light-shielding region and a value stored in the storage device.
摘要:
A photoelectric conversion unit converts a received light into an electric signal. An amplification circuit amplifying the electric signal includes a plurality of elements of which a characteristic value is formed as the same value, an amplifier of which an amplification ratio is determined by a characteristic value of two composite elements constituted by connecting one or more of the elements, a changeover unit for changing over the element constituting each of the composite elements by changing over a connection between the elements, and an averaging unit for averaging outputs of the amplifier, which are obtained at every time of changing over the elements and making the average an output of the amplification circuit.
摘要:
A ramp waveform generation circuit which comprises a first reference power supply, and supplies a ramp waveform signal to an analog/digital conversion circuit further comprises a connection circuit for reflecting the amount of fluctuation of the output potential of a second reference power supply which is installed in a noise elimination circuit for eliminating the noise of an analog signal inputted to the analog/digital conversion circuit in the output potential of the first reference power supply.
摘要:
A circuit includes a first phase-adjustment circuit adjusting phases of rising edges and falling edges of an original signal, and a phase-delay circuit receiving a phase-adjusted signal from said first phase-adjustment circuit and generating a delay signal by delaying said phase-adjusted signal by a predetermined phase amount. The circuit further includes a phase-comparison circuit comparing phases of edges between said phase-adjusted signal and said delay signal so as to control said first phase-adjustment circuit such that said phases of edges satisfy a predetermined phase relation.
摘要:
An outline of an SRAM cell is rectangular. The SRAM cell have nMOS transistors QN1 and QN3 in a nMOS region 13A being on one side of the longitudinal direction, nMOS transistors QN2 and QN4 in a nMOS region 13B being on the opposite side thereof, pMOS transistors QP1 and QP2 in a central region 12, and isolation regions 14A and 14B being between the regions 13A and 12 and between the regions 13B and 12 respectively. The pMOS transistors QP1 and QP2 are on the nMOS transistor QN1 side and on the nMOS transistor QN2 side respectively within the region 12. The direction of bit lines is perpendicular to the longitudinal direction and the word line is parallel to the longitudinal direction. The nMOS transistors QN1, QN4 and the pMOS transistor QP1 are placed on one side of the regions 13A, 13B and 12 respectively in the direction perpendicular to the longitudinal direction, whereas the nMOS transistors QN3 and QN2 and the pMOS transistor QP2 are placed on the opposite side thereof.
摘要:
An electronic system includes a plurality of electronic circuits each having a signal input and output function, a bus to which the plurality of electronic circuits are connected, first termination resistors connected to ends of the bus, and a termination voltage circuit having a first part generating a first voltage and a second part generating a second voltage. The sum of the first voltage and the second voltage is supplied, as a power supply voltage, to output circuits of the plurality of electronic circuits connected to the bus. The second voltage is supplied to the first termination resistors as a termination voltage.
摘要:
An oil ring Ro for an internal combustion engine according to the present invention includes at least one selected from the group consisting of hard carbon, CrN and TiN that covers an outer periphery 1 of the oil ring. A radius of curvature R at an outermost portion T of the oil ring in a sliding direction is 0.3 mm or more.
摘要:
A solid-state image pickup device and image pickup method eliminate a dark-current component by adjusting the black level appropriately even if the dark-current component varies among horizontal lines. A pixel array includes light-receiving pixel elements and light-blocking pixel elements disposed such that horizontal lines include the light-blocking pixel elements individually. A readout circuit block reads pixel signals of each of the horizontal lines from the pixel array, inputs the pixel signals to ADC circuits (column ADC circuit block), and outputs the pixel signals of the light-blocking pixel elements. A ramp signal generation circuit obtains the pixel signals of the light-blocking pixel elements output from the readout circuit block, generates a ramp signal by using a reference level of AD conversion adjusted for each of the horizontal lines in accordance with the obtained pixel signals of the light-blocking pixel elements, and inputs the ramp signal to the ADC circuits.