摘要:
A cold roll forming method for reducing a diameter of a metal pipe and a metal pipe product having a diameter reduced by such a method are disclosed, wherein the method includes: passing a raw metal pipe through a set of pre-forming rolls so that it can be pre-formed into an intermediate metal pipe having an elliptical, elongated circular or rectangular cross-sectional shape; and then passing the intermediate metal pipe through a set of diameter-reducing rolls disposed on a downstream side of the set of pre-forming rolls so that it can have its outer circumferential length reduced to be smaller than an outer peripheral length of the raw metal pipe, while at the same time being re-formed into a circular cross-sectional shape or any other cross-sectional shape different from the cross-sectional shape of the intermediate metal pipe.
摘要:
A cold roll forming method for reducing a diameter of a metal pipe and a metal pipe product having a diameter reduced by such a method are disclosed, wherein the method includes: passing a raw metal pipe through a set of pre-forming rolls so that it can be pre-formed into an intermediate metal pipe having an elliptical, elongated circular or rectangular cross-sectional shape; and then passing the intermediate metal pipe through a set of diameter-reducing rolls disposed on a downstream side of the set of pre-forming rolls so that it can have its outer circumferential length reduced to be smaller than an outer peripheral length of the raw metal pipe, while at the same time being re-formed into a circular cross-sectional shape or any other cross-sectional shape different from the cross-sectional shape of the intermediate metal pipe.
摘要:
A cold roll forming method for reducing a diameter of a metal pipe and a metal pipe product having a diameter reduced by such a method are disclosed, wherein the method includes: passing a raw metal pipe through a set of pre-forming rolls so that it can be pre-formed into an intermediate metal pipe having an elliptical, elongated circular or rectangular cross-sectional shape; and then passing the intermediate metal pipe through a set of diameter-reducing rolls disposed on a downstream side of the set of pre-forming rolls so that it can have its outer circumferential length reduced to be smaller than an outer peripheral length of the raw metal pipe, while at the same time being re-formed into a circular cross-sectional shape or any other cross-sectional shape different from the cross-sectional shape of the intermediate metal pipe.
摘要:
A cold roll forming method for reducing a diameter of a metal pipe and a metal pipe product having a diameter reduced by such a method are disclosed, wherein the method includes: passing a raw metal pipe through a set of pre-forming rolls so that it can be pre-formed into an intermediate metal pipe having an elliptical, elongated circular or rectangular cross-sectional shape; and then passing the intermediate metal pipe through a set of diameter-reducing rolls disposed on a downstream side of the set of pre-forming rolls so that it can have its outer circumferential length reduced to be smaller than an outer peripheral length of the raw metal pipe, while at the same time being re-formed into a circular cross-sectional shape or any other cross-sectional shape different from the cross-sectional shape of the intermediate metal pipe.
摘要:
A media-agitation pulverizer is capable of creating a uniformized, stable helicoidal flow in a mixture of pulverizing media and a raw material slurry, thereby performing pulverization/dispersion uniformly with satisfactory energy efficiency. The media-agitation pulverizer includes a guide ring installed to radially divide a lower region of a pulverization chamber into an inner section and an annular outer section, whereby a flow of a mixture of a raw material slurry and pulverizing media is formed as a helicoidal flow including a secondary flow flowing through a circulation flow path with respect to the guide ring; and rotational-flow suppressing device is provided within the pulverization chamber and adapted to strengthen the secondary flow of the helicoidal flow, thereby stabilizing the helicoidal flow.
摘要:
An electronic apparatus includes a display unit, a sensor, and a controller. The display unit includes a screen. The sensor is configured to detect a user operation with respect to the screen and output a signal corresponding to the user operation. The controller is configured to cause a data icon to be displayed on the screen, judge a drag operation with respect to the data icon based on the signal from the sensor, judge, based on the signal from the sensor, a user operation different from the drag operation for one of copying and moving data related to the data icon based on the drag operation, and execute processing for one of copying and moving the data according to the user operation.
摘要:
A method of producing fluoroapatite by using a calcium-based compound containing calcium, hydrogen fluoride and phosphoric acid is provided. The method can be produced fluoroapatite having improved acid resistance by reducing an amount of an impurity derived from a raw material to a low or very low level, and ability capable of separating a large amount of a protein due to a large specific surface area thereof. Further, fluoroapatite having high acid resistance and a large specific surface area is also provided. Furthermore, an adsorption apparatus using such fluoroapatite is also provided.
摘要:
A manufacturing method of a silicon carbide semiconductor device includes: forming a drift layer on a silicon carbide substrate; forming a base layer on or in a surface portion of the drift layer; forming a source region in a surface portion of the base layer; forming a trench to penetrate the base layer and to reach the drift layer; forming a gate electrode on a gate insulation film in the trench; forming a source electrode electrically connected to the source region and the base layer; and forming a drain electrode on a back surface of the substrate. The forming of the trench includes: flattening a substrate surface; and etching to form the trench after flattening.
摘要:
A silicon carbide semiconductor device includes a silicon carbide semiconductor substrate and a trench. The silicon carbide semiconductor substrate has an offset angle with respect to a (0001) plane or a (000-1) plane and has an offset direction in a direction. The trench is provided from a surface of the silicon carbide semiconductor substrate. The trench extends in a direction whose interior angle with respect to the offset direction is 30 degrees or −30 degrees.
摘要:
A semiconductor device includes a semiconductor substrate and an electric field terminal part. The semiconductor substrate includes a substrate, a drift layer disposed on a surface of the substrate, and a base layer disposed on a surface of the drift layer. The semiconductor substrate is divided into a cell region in which a semiconductor element is disposed and a peripheral region that surrounds the cell region. The base region has a bottom face located on a same plane throughout the cell region and the peripheral region and provides an electric field relaxing layer located in the peripheral region. The electric field terminal part surrounds the cell region and a portion of the electric field relaxing layer and penetrates the electric field relaxing layer from a surface of the electric field relaxing layer to the drift layer.